The DS1876 controls and monitors all functions for
dual transmitter modules. The memory map is based
on SFF-8472. The DS1876 supports APC and modulation control and eye safety functionality for two laser
drivers. It continually monitors for high output current,
high bias current, and low and high transmit power to
ensure that laser shutdown for eye safety requirements
are met without adding external components. Six ADC
channels monitor VCC, temperature, and four external
monitor inputs that can be used to meet all monitoring
requirements.
Applications
Dual Tx Video SFP Modules
Ordering Information
PARTTEMP RANGEPIN-PACKAGE
DS1876T+
DS1876T+T&R
+Denotes a lead(Pb)-free/RoHS-compliant package.
T&R = Tape and reel.
*EP = Exposed pad.
-40NC to +95NC
-40NC to +95NC
28 TQFN-EP*
28 TQFN-EP*
Features
S Meets All SFF-8472 Transmitter Control and
Monitoring Requirements
S Six Analog Monitor Channels: Temperature, V
PMON1, BMON1, PMON2, BMON2
PMON_ and BMON_ Support Internal and
External Calibration
Scalable Dynamic RangeInternal Direct-to-Digital Temperature SensorAlarm and Warning Flags for All Monitored
Voltage Range on PMON_, BMON_, RSEL,
IN1, TXF_, and TXD_ Pins
Relative to Ground ...............................-0.5V to (VCC + 0.5V)*
Voltage Range on VCC, SDA, SCL,
OUT1, RSELOUT, and TXFOUT Pins
Relative to Ground ...............................................-0.5V to +6V
*Subject to not exceeding +6V.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 1: All voltages are referenced to ground. Current into the IC is positive, and current out of the IC is negative.
Note 2: Inputs are at supply rail. Outputs are not loaded.
Note 3: This parameter is guaranteed by design.
Note 4: Full scale is user programmable.
Note 5: A temperature conversion is completed and MOD1 DAC, MOD2 DAC, APC1 DAC, and APC2 DAC values are recalled
from the LUT and VCC has been measured to be above VCC LO alarm, if the VCC LO alarm is enabled.
Note 6: I2C interface timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I2C stan-
dard mode.
Note 7: CB—Total capacitance of one bus line in pF.
Note 8: EEPROM write begins after a STOP condition occurs.
The DS1876 integrates the control and monitoring functionality required in a dual transmitter system. Key components of the DS1876 are shown in the Block Diagram
and described in subsequent sections.
DACs During Power-Up
On power-up, the DS1876 sets the DACs to high impedance. After time t
, the DACs are set to an initial condition
INIT
set in EEPROM. After a temperature conversion is completed and if the VCC LO alarm is enabled, an additional
VCC conversion above the customer-defined VCC LO
alarm level is required before the DACs are updated with
the value determined by the temperature conversion and
the DAC LUT.
If a fault is detected, and TXD1 and TXD2 are toggled
to re-enable the outputs, the DS1876 powers up following a similar sequence to an initial power-up. The
ADCAnalog-to-Digital Converter
AGCAutomatic Gain Control
APCAutomatic Power Control
APDAvalanche Photodiode
ATBAlarm Trap Bytes
DACDigital-to-Analog Converter
LOSLoss of Signal
LUTLookup Table
NVNonvolatile
QTQuick Trip
TETracking Error
TIATransimpedance Amplifier
ROSAReceiver Optical Subassembly
SEEShadowed EEPROM
SFFSmall Form Factor
SFF-8472
SFPSmall Form Factor Pluggable
SFP+Enhanced SFP
TOSATransmit Optical Subassembly
TXPTransmit Power
Document Defining Register Map of SFPs
and SFFs
only difference is that the DS1876 already has determined the present temperature, so the t
time is not
INIT
required for the DS1876 to recall the APC and MOD
set points from EEPROM. See Figure 1.
DACs as a Function of Transmit Disable
(TXD1, TXD2)
If TXD1 or TXD2 are asserted (logic 1) during normal
operation, the associated outputs are disabled within
t
. When TXD1 or TXD2 are deasserted (logic 0), the
OFF
DS1876 sets the DACs with the value associated with
the present temperature. When asserted, soft TXD1 or
soft TXD2 (TXDC) (Lower Memory, Register 6Eh) would
allow a software control identical to the TXD1 or TXD2 pin
(Figure 2). The POLARITY register (Table 02h, Register
C6h) determines if the off-state value of the DACs is
V
or 0V.
REFIN
Quick-Trip Timing
As shown in Figure 3, the DS1876’s input comparator is shared among the six quick-trip alarms (TXP1
HI, TXP1 LO, TXP2 HI, TXP2 LO, BIAS1 HI, and BIAS2
HI). The comparator polls the alarms in a multiplexed
sequence. The updates are used to compare the HTXP1,
LTXP1, HTXP2, and LTXP2 (monitor diode voltages) and
the HBATH1 and HBATH2 (BMON1, BMON2) signals
against the internal APC and BIAS reference, respectively. Depending on the results of the comparison, the
Temperature (NC)
VCC (V)6.5528FFF800000
PMON1, PMON2 and BMON1, BMON2 (V)2.4997FFF800000
corresponding alarms and warnings (TXP HI1, TXP LO1,
TXP HI2, TXP LO2, BIAS HI1, and BIAS HI2) are asserted
or deasserted.
After resetting, the device completes one QT cycle
before making comparisons. The TXP LO quick-trip
alarm updates its alarm bit, but does not create FETG
until after TXD
figured to wait for TXD
. TXP HI and BIAS HI can also be con-
EXT
; however, this can be disabled
EXT
using QTHEXT_ (Table 02h, Register 88h).
Monitors and Fault Detection
Monitoring functions on the DS1876 include six quicktrip comparators and six ADC channels. This monitoring
combined with the alarm enables (Table 01h/05h) determines when/if the DS1876 turns off DACs and triggers
the TXFOUT and TXDOUT1, TXDOUT2 outputs. All the
monitoring levels and interrupt masks are user programmable.
Six Quick-Trip Monitors and Alarms
Six quick-trip monitors are provided to detect potential
laser safety issues and LOS status. These monitor the
following:
1) High Bias Current 1 (HBATH1), causing QT BIAS1 HI
2) Low Transmit Power 1 (LTXP1), causing QT TXP1 LO
3) High Transmit Power 1 (HTXP1), causing QT TXP1 HI
4) High Bias Current 2 (HBATH2), causing QT BIAS2 HI
5) Low Transmit Power 2 (LTXP2), causing QT TXP2 LO
6) High Transmit Power 2 (HTXP2), causing QT TXP2 HI
127.9967FFF-1288000
The high and low transmit power quick-trip registers
(HTXP1, HTXP2, LTXP1, and LTXP2) set the thresholds
used to compare against the PMON1 and PMON2 voltages to determine if the transmit power is within specification. The HBATH1 and HBATH2 QTs compare the
BMON1 and BMON2 inputs (generally from the laser
driver’s bias monitor output) against their threshold settings to determine if the present bias current is above
specification. The bias and power QTs are routed to
FETG through interrupt masks to allow combinations
of these alarms to be used to trigger FETG. The bias
Monitors
and power QTs are directly connected to TXFOUT (see
Figure 9). The user can program up to eight different
temperature-indexed threshold levels for HBATH1 and
HBATH2 (Table 06h, Registers E0h-E7h).
Six ADC Monitors and Alarms
The ADC monitors six channels that measure temperature (internal temp sensor), VCC, PMON1, PMON2,
BMON1, and BMON2 using an analog multiplexer to
measure them round-robin with a single ADC (see the
ADC Timing section). The channels have a customerprogrammable full-scale range, and all channels have a
customer-programmable offset value that is factory programmed to a default value (see Table 2). Additionally,
PMON1, PMON2 and BMON1, BMON2 can right-shift
results by up to 7 bits before the results are compared
to alarm thresholds or read over the I2C bus. This allows
customers with specified ADC ranges to calibrate the
ADC full scale to a factor of 1/2n of their specified range
to measure small signals. The DS1876 can then rightshift the results by n bits to maintain the bit weight of their
specification.
The ADC results (after right-shifting, if used) are compared to the alarm and warning thresholds after each
conversion, and the corresponding alarms are set that
can be used to trigger the TXFOUT output. These ADC
thresholds are user programmable, as are the masking
registers that can be used to prevent the alarms from triggering the TXFOUT output.
ADC Timing
There are six analog channels that are digitized in a
round-robin fashion in the order as shown in Figure 4.
The total time required to convert all six channels is tRR
(see the Analog Voltage Monitoring Characteristics table
for details).
Right-Shifting ADC Result
If the weighting of the ADC digital reading must conform
to a predetermined full-scale (PFS) value defined by
a standard’s specification (e.g., SFF-8472), then rightshifting can be used to adjust the PFS analog measurement range while maintaining the weighting of the ADC
results. The DS1876’s range is wide enough to cover all
requirements; when the maximum input value is P 1/2
the FS value, right-shifting can be used to obtain greater
accuracy. For instance, the maximum voltage might be
1/8 the specified PFS value, so only 1/8 of the converter’s
range is effective over this range. An alternative is to calibrate the ADC’s full-scale range to 1/8 the readable PFS
value and use a right-shift value of 3. With this implementation, the resolution of the measurement is increased by
a factor of 8, and because the result is digitally divided
by 8 by right-shifting, the bit weight of the measurement
still meets the standard’s specification (i.e., SFF-8472).
The right-shift operation on the ADC result is carried
out based on the contents of right-shift control registers
(Table 02h, Registers 8Eh-8Fh) in EEPROM. Four analog
channels—PMON1, PMON2, BMON1, and BMON2—
each have 3 bits allocated to set the number of right-
shifts. Up to seven right-shift operations are allowed and
DS1876
are executed as a part of every conversion before the
results are compared to the high and low alarm levels, or
loaded into their corresponding measurement registers
(Lower Memory, Registers 64h–6Bh). This is true during
the setup of internal calibration as well as during subsequent data conversions.
Low-Voltage Operation
The DS1876 contains two power-on reset (POR) levels.
The lower level is a digital POR (POD) and the higher
level is an analog POR (POA). At startup, before the supply voltage rises above POA, the outputs are disabled,
all SRAM locations are set to their defaults, shadowed
EEPROM (SEE) locations are zero, and all analog circuitry is disabled. When VCC reaches POA, the SEE is
recalled, and the analog circuitry is enabled. While VCC
remains above POA, the device is in its normal operating
state, and it responds based on its nonvolatile configuration. If during operation VCC falls below POA, but is
still above POD, the SRAM retains the SEE settings from
the first SEE recall, but the device analog is shut down
and the outputs disabled. If the supply voltage recovers
back above POA, the device immediately resumes normal operation. If the supply voltage falls below POD, the
device SRAM is placed in its default state and another
SEE recall is required to reload the nonvolatile settings.
The EEPROM recall occurs the next time VCC next
exceeds POA. Figure 5 shows the sequence of events
as the voltage varies.
Any time VCC is above POD, the I2C interface can be
used to determine if VCC is below the POA level. This
is accomplished by checking the RDYB bit in the status
byte (Lower Memory, Register 6Eh). RDYB is set when
VCC is below POA; when VCC rises above POA, RDYB
is timed (within 500Fs) to go to 0, at which point the part
is fully functional.
ONE ROUND-ROBIN ADC CYCLE
TEMPV
NOTE: IF THE VCC LO ALARM IS ENABLED AT POWER-UP, THE ADC ROUND-ROBIN TIMING CYCLES BETWEEN TEMPERATURE AND VCC ONLY UNTIL VCC IS ABOVE THE VCC LO
ALARM THRESHOLD. THIS ALSO OCCURS IF THERE ARE BOTH A TXD1 EVENT AND A TXD2 EVENT UNDER THE SAME CONDITIONS AS PREVIOUSLY MENTIONED.
Figure 6. Recommended RC Filter for DAC Outputs in Voltage
Mode and Current Sink Mode
For all device addresses sourced from EEPROM (Table
02h, Register 8Bh), the default device addresses are
A2h and B2h until VCC exceeds POA allowing the device
address to be recalled from the EEPROM.
Delta-Sigma Outputs
Four delta-sigma outputs are provided: MOD1, MOD2,
APC1, and APC2. With the addition of an external RC
filter, these outputs provide 10-bit resolution analog
outputs with the full-scale range set by the input REFIN.
Each output is either manually controlled or controlled
using a temperature-indexed LUT.
PRECHARGED TO 0
VOLTAGE OUTPUT
CURRENT SINK
2kΩ
A delta-sigma DAC has a digital output using pulsedensity modulation. It provides much lower output ripple
than a standard digital PWM output given the same clock
rate and filter components. Before t
are high impedance. The external RC filter components
are chosen based on ripple requirements, output load,
delta-sigma frequency, and desired response time.
Figure 6 shows a recommended filter.
For illustrative purposes, a 3-bit example is provided in
Figure 7.
In LUT mode the DACs are each controlled by an LUT
with high-temperature resolution and an OFFSET LUT
with lower temperature resolution. The high-resolution
LUTs each have 2NC resolutions. The OFFSET LUTs
are located in the upper eight registers (F8h-FFh) of
the table containing each high-resolution LUT. The DAC
values are determined as follows:
DAC value = LUT + 4 x (OFFSET LUT)
An example calculation for MOD1 DAC is as follows:
REFIN and its decoupling must be able to support the
edge rate requirements of the delta-sigma outputs. In
a typical application, a 0.1FF capacitor should be connected between REFIN and ground.
Six digital input pins and five digital output pins are provided for monitoring and control.
IN1, RSEL, OUT1, RSELOUT
Digital input pins IN1 and RSEL primarily serve to meet
the rate-select requirements of SFP and SFP+. They
can also serve as general-purpose inputs. OUT1 and
RSELOUT are driven by a combination of the IN1, RSEL,
and logic dictated by control registers in the EEPROM
(see Figure 10). The levels of IN1 and RSEL can be
read from the STATUS register (Lower Memory, Register
6Eh). The open-drain output OUT1 can be controlled
and/or inverted using the CNFGB register (Table 02h,
TXFINT
TXFOUTS1
TXFOUTS2
POWER-ON
RESET
INVTXF_
TXF_
NOTE:
_ CAN BE EITHER 1 OR 2 CORRESPONDING TO TRANSMITTERS 1 OR 2.
REFERS TO A PIN.
TXFS_
Register 89h). The open-drain RSELOUT output is
software controlled and/or inverted through the STATUS
register and CNFGA register (Table 02h, Register 88h).
External pullup resistors must be provided on OUT1 and
RSELOUT to realize high logic levels.
TXF1, TXF2, TXFOUT, TXD1, TXD2,
TXDOUT1, TXDOUT2
TXDOUT1 and TXDOUT2 are generated from a combination of TXF1, TXF2, TXD1, TXD2, and the internal
signals FETG1 and FETG2 (Table 02h, Register 8Ah). A
software control identical to TXD1 and TXD2 is also available (TXDC1 and TXDC2, Lower Memory, Register 6Eh).
A TXD1 or TXD2 pulse is internally extended (TXD
by time t
to inhibit the latching of low alarms and
INITR1
warnings related to the APC loop to allow for the loop to
stabilize. The nonlatching alarms and warnings are TXP
LO, BMON1 LO, BMON2 LO, PMON1 LO, and PMON2
LO. In addition, TXP LO is disabled from creating FETG.
See the Transmit Fault (TXFOUT) Output section for a
detailed explanation of TXFOUT. As shown in Figure 9,
the same signals and faults can also be used to generate the internal signal FETG. FETG is used to send a fast
“turn-off” command to the laser driver. The intended use
is a direct connection to the laser driver’s TXD1, TXD2
input if this is desired. When VCC < POA, TXDOUT1 and
TXDOUT2 are high impedance.
TXFOUT can be triggered by all alarms, warnings, QTs,
TXD1, TXD2, TXF1, and TXF2 (see Figure 9). The six
ADC alarms and warnings are controlled by enable bits
(Table 01h/05h, Registers F8h and FCh). See Figures
11a and 11b for nonlatched and latched operation for
TXFOUT. The CNFGB register (Table 02h, Register 89h)
controls the latching of the alarms.
Die Identification
The DS1876 has an ID hardcoded in its memory. Two
registers (Table 02h, Registers 86h-87h) are assigned
for this feature. Register 86h reads 76h to identify the
part as the DS1876; Register 87h reads the present
device version.
I2C Communication
I2C Definitions
The following terminology is commonly used to describe
I2C data transfers.
Master Device: The master device controls the slave
devices on the bus. The master device generates SCL
clock pulses and START and STOP conditions.
Slave Devices: Slave devices send and receive data
at the master’s request.
Bus Idle or Not Busy: Time between STOP and
START conditions when both SDA and SCL are inactive and in their logic-high states.
START Condition: A START condition is generated
by the master to initiate a new data transfer with a
slave. Transitioning SDA from high to low while SCL
remains high generates a START condition. See
Figure 12 for applicable timing.
STOP Condition: A STOP condition is generated
by the master to end a data transfer with a slave.
Transitioning SDA from low to high while SCL remains
high generates a STOP condition. See Figure 12 for
applicable timing.
Repeated START Condition: The master can use
a repeated START condition at the end of one data
transfer to indicate that it will immediately initiate a
new data transfer following the current one. Repeated
STARTs are commonly used during read operations
to identify a specific memory address to begin a data
transfer. A repeated START condition is issued identically to a normal START condition. See Figure 12 for
applicable timing.
Bit Write: Transitions of SDA must occur during the
low state of SCL. The data on SDA must remain valid
and unchanged during the entire high pulse of SCL
plus the setup and hold time requirements (Figure 12).
Data is shifted into the device during the rising edge
of the SCL.
Bit Read: At the end of a write operation, the master
must release the SDA bus line for the proper amount
of setup time (Figure 12) before the next rising edge
of SCL during a bit read. The device shifts out each
bit of data on SDA at the falling edge of the previous
SCL pulse and the data bit is valid at the rising edge
of the current SCL pulse. Remember that the master
generates all SCL clock pulses, including when it is
reading bits from the slave.
DS1876
Acknowledgement (ACK and NACK): An acknowledgement (ACK) or not-acknowledge (NACK) is
always the 9th bit transmitted during a byte transfer.
The device receiving data (the master during a read
or the slave during a write operation) performs an ACK
by transmitting a zero during the 9th bit. A device performs a NACK by transmitting a one during the 9th bit.
Timing (Figure 12) for the ACK and NACK is identical
to all other bit writes. An ACK is the acknowledgment
that the device is properly receiving data. A NACK is
used to terminate a read sequence or as an indication
that the device is not receiving data.
Byte Write: A byte write consists of 8 bits of information transferred from the master to the slave (most
significant bit first) plus a 1-bit acknowledgement from
the slave to the master. The 8 bits transmitted by the
master are done according to the bit write definition
and the acknowledgement is read using the bit read
definition.
Byte Read: A byte read is an 8-bit information transfer
from the slave to the master plus a 1-bit ACK or NACK
from the master to the slave. The 8 bits of information
that are transferred (most significant bit first) from the
slave to the master are read by the master using the
bit read definition, and the master transmits an ACK
using the bit write definition to receive additional data
bytes. The master must NACK the last byte read to
terminate communication so the slave returns control
of SDA to the master.
Slave Address Byte: Each slave on the I2C bus
responds to a slave address byte sent immediately
following a START condition. The slave address byte
contains the slave address in the most significant 7 bits
and the R/W bit in the least significant bit.
The DS1876 responds to three slave addresses. The
auxiliary memory always responds to a fixed I2C slave
address, A0h. (If the main device’s slave address
is programmed to be A0h, access to the auxiliary
memory is disabled.) The Lower Memory and Tables
00h–06h respond to I2C slave addresses whose lower
3 bits are configurable (A0h–AEh, B0h-BEh) using the
DEVICE ADDRESS byte (Table 02h, Register 8Bh). The
user also must set the ASEL bit (Table 02h, Register
88h) for this address to be active. By writing the correct slave address with R/W = 0, the master indicates
it writes data to the slave. If R/W = 1, the master reads
data from the slave. If an incorrect slave address is
written, the DS1876 assumes the master is communicating with another I2C device and ignores the communications until the next START condition is sent.
Memory Address: During an I2C write operation
to the DS1876, the master must transmit a memory
address to identify the memory location where the
slave is to store the data. The memory address is
always the second byte transmitted during a write
operation following the slave address byte.
I2C Protocol
See Figure 13 for an example of I2C timing.
Writing a Single Byte to a Slave: The master must
generate a START condition, write the slave address
byte (R/W = 0), write the memory address, write
the byte of data, and generate a STOP condition.
Remember that the master must read the slave’s
acknowledgement during all byte write operations.
Writing Multiple Bytes to a Slave: To write multiple
bytes to a slave, the master generates a START condition, writes the slave address byte (R/W = 0), writes
the memory address, writes up to 8 data bytes, and
generates a STOP condition. The DS1876 writes 1 to
8 bytes (one page or row) with a single write transaction. This is internally controlled by an address
counter that allows data to be written to consecutive
addresses without transmitting a memory address
before each data byte is sent. The address counter
limits the write to one 8-byte page (one row of the
memory map). Attempts to write to additional pages
of memory without sending a STOP condition between
pages result in the address counter wrapping around
to the beginning of the present row.
For example: A 3-byte write starts at address 06h and
DS1876
writes three data bytes (11h, 22h, and 33h) to three
“consecutive” addresses. The result is that addresses
06h and 07h would contain 11h and 22h, respectively, and the third data byte, 33h, would be written
to address 00h.
To prevent address wrapping from occurring, the
master must send a STOP condition at the end of
the page, then wait for the bus-free or EEPROM write
time to elapse. Then the master can generate a new
START condition and write the slave address byte
(R/W = 0) and the first memory address of the next
memory row before continuing to write data.
Acknowledge Polling: Any time a EEPROM page is
written, the DS1876 requires the EEPROM write time
(tWR) after the STOP condition to write the contents of
the page to EEPROM. During the EEPROM write time,
the DS1876 does not acknowledge its slave address
because it is busy. It is possible to take advantage
of that phenomenon by repeatedly addressing the
DS1876, which allows the next page to be written
as soon as the DS1876 is ready to receive the data.
The alternative to acknowledge polling is to wait for
maximum period of tWR to elapse before attempting
to write again to the DS1876.
2
TYPICAL I
C WRITE TRANSACTION
MSBLSB
START
XXXX001 R/W
SLAVE
ADDRESS*
*IF ASEL IS 0, THE SLAVE ADDRESS IS A0h FOR THE AUXILIARY MEMORY AND A2h/B2h FOR THE MAIN MEMORY.
IF ASEL = 1, THE SLAVE ADDRESS IS DETERMINED BY TABLE 02h, REGISTER 8Bh FOR THE MAIN MEMORY. THE AUXILIARY MEMORY CONTINUES TO BE ADDRESSED AT A0h, EXCEPT WHEN THE PROGRAMMED
ADDRESS FOR THE MAIN MEMORY IS A0h.
EEPROM Write Cycles: When EEPROM writes occur,
the DS1876 writes the whole EEPROM memory page,
even if only a single byte on the page was modified.
Writes that do not modify all 8 bytes on the page are
allowed and do not corrupt the remaining bytes of
memory on the same page. Because the whole page
is written, bytes on the page that were not modi-
DS1876
fied during the transaction are still subject to a write
cycle. This can result in a whole page being worn
out over time by writing a single byte repeatedly.
Writing a page 1 byte at a time wears the EEPROM
out 8x faster than writing the entire page at once. The
DS1876’s EEPROM write cycles are specified in the
Nonvolatile Memory Characteristics table. The specification shown is at the worst-case temperature. It can
handle approximately 10x that many writes at room
temperature. Writing to SRAM-shadowed EEPROM
memory with SEEB = 1 does not count as a EEPROM
write cycle when evaluating the EEPROM’s estimated
lifetime.
Reading a Single Byte from a Slave: Unlike the
write operation that uses the memory address byte
to define where the data is to be written, the read
operation occurs at the present value of the memory
address counter. To read a single byte from the slave,
the master generates a START condition, writes the
slave address byte with R/W = 1, reads the data byte
with a NACK to indicate the end of the transfer, and
generates a STOP condition.
Manipulating the Address Counter for Reads: A
dummy write cycle can be used to force the address
pointer to a particular value. To do this, the master generates a START condition, writes the slave
address byte (R/W = 0), writes the memory address
where it desires to read, generates a repeated START
condition, writes the slave address byte (R/W = 1),
reads data with ACK or NACK as applicable, and
generates a STOP condition.
Memory Organization
The DS1876 features nine separate memory tables
that are internally organized into 8-byte rows. The main
device located at A2h is used for overall device configuration and transmitter 1 control, calibration, alarms,
warnings, and monitoring.
Lower Memory, A2h is addressed from 00h–7Fh and
contains alarm and warning thresholds, flags, masks,
several control registers, password entry area (PWE),
and the table-select byte.
Table 01h, A2h primarily contains user EEPROM (with
PW1 level access) as well as alarm and warning enable
bytes.
Table 02h, A2h/B2h is a multifunction space that contains configuration registers, scaling and offset values,
passwords, and interrupt registers as well as other miscellaneous control bytes. All functions and status can be
written and read from either A2h or B2h addresses.
Table 04h, A2h contains a temperature-indexed LUT for
control of the MOD1 voltage. The MOD1 LUT can be programmed in 2NC increments over the -40NC to +102NC
range. This also contains a temperature-indexed LUT for
the MOD1 offsets.
Table 05h, A2h is empty by default. It can be configured to contain the alarm and warning enable bytes
from Table 01h, Registers F8h–FFh with the MASK bit
enabled (Table 02h, Register 88h). In this case Table
01h is empty.
Table 06h, A2h contains a temperature-indexed LUT for
control of the APC1 voltage. The APC1 LUT can be programmed in 2NC increments over the -40NC to +102NC
range. This also contains a temperature-indexed LUT for
the APC1 offsets.
The main device located at B2h is used for transmitter 2
control, calibration, alarms, warnings, and monitoring.
Lower Memory, B2h is addressed from 00h–7Fh and
contains alarm and warning thresholds, flags, masks,
several control registers, PWE, and the table-select byte.
Table 01h, B2h contains alarm and warning enable
bytes.
Table 04h, B2h contains a temperature-indexed LUT for
control of the MOD2 voltage. The MOD2 LUT can be programmed in 2NC increments over the -40NC to +102NC
range. This also contains a temperature-indexed LUT for
the MOD2 offsets.
Table 05h, B2h is empty by default. It can be configured to contain the alarm and warning enable bytes
from Table 01h, Registers F8h–FFh with the MASK bit
enabled (Table 02h, Register 88h). In this case Table
01h is empty.
Table 06h, B2h contains a temperature-indexed LUT for
control of the APC2 voltage. The APC2 LUT can be programmed in 2NC increments over the -40NC to +102NC
range. This also contains a temperature-indexed LUT for
the APC2 offsets.
IF ASEL = 1, THEN THE MAIN DEVICE I
TABLE 02h, REGISTER 8Bh.
NOTE 2: TABLE 00h DOES NOT EXIST.
NOTE 3: ALARM-ENABLE ROW CAN BE CONFIGURED TO EXIST AT TABLE 01h OR TABLE 05h USING THE
MASK BIT IN TABLE 02h, REGISTER 88h.
7Fh
80h
F7h
(B2h ONLY CONTAINS
FFh
TABLE 02h
NONLOOKUP
TABLE CONTROL
AND
CONFIGURATION
REGISTERS
TRANSMITTER 2-
RELATED REGISTERS)
FFh
80h
TABLE 04h
MOD1 (A2h)
MOD2 (B2h)
LOOKUP TABLE
(72 BYTES)
F8h
MOD1/2
OFFSET LUT
2
C SLAVE ADDRESS IS A2h/B2h.
2
C SLAVE ADDRESS IS DETERMINED BY THE VALUE IN
ALARM-ENABLE ROW
CAN BE CONFIGURED
TO EXIST AT TABLE 01h
OR TABLE 05h USING
MASK BIT IN TABLE 02h,
REGISTER 88h.
C7h
F8h
TABLE 05h
ALARM-ENABLE ROW
FFh
(8 BYTES)
FFh
80h
TABLE 06h
APC1 (A2h)
APC2 (B2h)
LOOKUP TABLE
(72 BYTES)
C7h
E0h
(APC1/2, HBATH1/2,
TXP HI 1/2, TXP LO 1/2)
OFFSET LUT
FFh
DS1876
Figure 14. Memory Map
Auxiliary Memory (Device A0h) contains 256 bytes
of EE memory accessible from address 00h–FFh. It is
selected with the device address of A0h.
See the Register Descriptions section for a more complete detail of each byte’s function, as well as for read/
write permissions for each byte.
Shadowed EEPROM
Many nonvolatile memory locations (listed within the
Register Descriptions section) are actually shadowed
EEPROM and are controlled by the SEEB bit in Table
02h, Register 80h.
The DS1876 incorporates shadowed EEPROM memory
locations for key memory addresses that can be written many times. By default the shadowed EEPROM bit,
SEEB, is not set and these locations act as ordinary
EEPROM. By setting SEEB, these locations function
like SRAM cells, which allow an infinite number of write
cycles without concern of wearing out the EEPROM.
This also eliminates the requirement for the EEPROM
write time, tWR. Because changes made with SEEB
enabled do not affect the EEPROM, these changes are
not retained through power cycles. The power-on value
is the last value written with SEEB disabled. This function can be used to limit the number of EEPROM writes
during calibration or to change the monitor thresholds
periodically during normal operation helping to reduce
the number of times EEPROM is written. Figure 14 shows
the memory map and indicates which locations are
shadowed EEPROM.
SFP Controller with Dual LDD Interface
Register Descriptions
The register maps show each byte/word (2 bytes) in
terms of its row in the memory. The first byte in the row
is located in memory at the row address (hexadecimal)
in the leftmost column. Each subsequent byte on the row
is one/two memory locations beyond the previous byte/
DS1876
word’s address. A total of 8 bytes are present on each
row. For more information about each of these bytes, see
the corresponding register description.
The following section provides the DS1876 register definitions. Each register or row of registers has an access
descriptor that determines the password level required
to read or write the memory. Level 2 password is
intended for the module manufacture access only. Level
1 password allows another level of protection for items
the end consumer wishes to protect. Many registers are
always readable, but require password access to write.
There are a few registers that cannot be read without
Memory Map Access Codes
password access. The following access codes describe
each mode used by the DS1876 with factory settings for
the PW_ENA and PW_ENB (Table 02h, Registers C0h–
C1h) registers.
ACCESS CODEREAD ACCESSWRITE ACCESS
<0/_>
<1/_>Read allWrite PW2
<2/_>Read allWrite not applicable
<3/_>Read all
<4/_>Read PW2Write PW2 + mode_bit
<5/_>Read allWrite all
<6/_>Read not applicableWrite all
<7/_>Read PW1Write PW1
<8/_>Read PW2Write PW2
<9/_>Read not applicableWrite PW2
<10/_>Read PW2Write not applicable
<11/_>Read allWrite PW1
At least 1 byte/bit in the row/byte is different than the rest of the row/byte, so look at each byte/bit
separately for permissions.
Write all, but the DS1876 hardware also writes to
these bytes/bits
Memory Addresses A0h, A2h, and B2h
There are three separate I2C addresses in the DS1876:
A0h, A2h, and B2h. A2h and B2h are used to configure
and monitor two transmitters. Transmitter 1 is accessed
MEMORY CODEA2h AND B2h REGISTERS
<C> or <_/C>
<D> or <_/D>Different memory locations are used for A2h and B2h device addresses.
A common memory location is used for A2h and B2h device addresses. Reading or writing to these
locations is identical, regardless of using A2h or B2h addresses.
Mixture of common and different memory locations for A2h and B2h device addresses. See the individual
bytes within the row for clarification. If “M” is used on an individual byte, see the expanded bit descriptions
to determine which bits are common vs. different.
using A2h. Transmitter 2 is accessed using B2h. Many
of the registers in A2h and B2h are shared registers.
These registers can be read and written from both A2h
and B2h.
SFP Controller with Dual LDD Interface
Lower Memory Register Map
LOWER MEMORY
ROW
(HEX)
00
08
10
18
20–40
48–50
58
60
68
70
78
ROW NAME
<1/C>
THRESHOLD
<1/C >
THRESHOLD
<1/D>
THRESHOLD
<1/D>
THRESHOLD
<1/C >
<1/D >
<1/C >
<2/M>
ADC VALUES
<0/M>
ADC VALUES
<5/D>
ALARM/WARNALARM
<0/M>
TABLE SELECTRESERVEDRESERVEDRESERVED
0
1
2
3
EEPROMEEEEEEEE
EEPROMEEEEEEEE
EEPROMEEEEEEEEEEEEEEEE
0
1
<C> or <_/C> = Common, <D> or <_/D> = Different, <M> or <_/M> = Mixture of common and different.
Table 01h Register Map
ROW
(HEX)
80–F7
F8
<C> or <_/C> = Common, <D> or <_/D> = Different, <M> or <_/M> = Mixture of common and different.
Note: The ALARM ENABLE bytes (Registers F8h–FFh) can be configured to exist in Table 05h instead of here at Table 01h with
the MASK bit (Table 02h, Register 88h). If the row is configured to exist in Table 05h, these location are empty in Table 01h.
The access codes represent the factory default values of PW_ENA and PW_ENB (Table 02h, Registers C0h–C1h).
These registers also allow for custom permissions.
<C> or <_/C> = Common, <D> or <_/D> = Different, <M> or <_/M> = Mixture of common and different.
*The final result must be XORed with BB40h before writing to this register.
<C> or <_/C> = Common, <D> or <_/D> = Different, <M> or <_/M> = Mixture of common and different.
The access codes represent the factory default values of PW_ENA and PW_ENB (Table 02h, Registers C0h–C1h).
These registers also allow for custom permissions.
<C> or <_/C> = Common, <D> or <_/D> = Different, <M> or <_/M> = Mixture of common and different.
Note: Table 05h is empty by default. It can be configured to contain the alarm and warning enable bytes from Table 01h,
Registers F8h–FFh with the MASK bit enabled (Table 02h, Register 88h). In this case Table 01h is empty.
<C> or <_/C> = Common, <D> or <_/D> = Different, <M> or <_/M> = Mixture of common and different.
The access codes represent the factory default values of PW_ENA and PW_ENB (Table 02h, Registers C0h–C1h).
These registers also allow for custom permissions.
WRITE ACCESSPW2 or (PW1 and WLOWER)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
00h, 04hS2
01h, 05h2
-1
6
-2
2
5
2
-3
2
BIT 7BIT 0
Temperature measurement updates above this two’s complement threshold set its corresponding alarm or
warning bit. Temperature measurement updates equal to or below this threshold clear its alarm or warning bit.
Lower Memory, Register 02h–03h: TEMP ALARM LO
Lower Memory, Register 06h–07h: TEMP WARN LO
FACTORY DEFAULT 8000h
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WLOWER)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
02h, 06hS2
03h, 07h2
-1
BIT 7BIT 0
Temperature measurement updates below this two’s complement threshold set its corresponding alarm or
warning bit. Temperature measurement updates equal to or above this threshold clear its alarm or warning bit.
FACTORY DEFAULT FFFFh
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WLOWER)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
DS1876
08h, 0Ch2
09h, 0Dh 2
15
7
14
2
6
2
13
2
5
2
BIT 7BIT 0
Voltage measurement updates above this unsigned threshold set its corresponding alarm or warning bit.
Voltage measurements equal to or below this threshold clear its alarm or warning bit.
Lower Memory, Register 0Ah–0Bh: VCC ALARM LO
Lower Memory, Register 0Eh–0Fh: VCC WARN LO
FACTORY DEFAULT 0000h
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WLOWER)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
0Ah, 0Eh2
0Bh, 0Fh2
BIT 7BIT 0
Voltage measurement updates below this unsigned threshold set its corresponding alarm or warning bit. Voltage
measurements equal to or above this threshold clear its alarm or warning bit.
FACTORY DEFAULT FFFFh
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WLOWER)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (SEE)
10h, 14h,
18h, 1Ch
11h, 15h,
19h, 1Dh
15
2
7
2
14
2
6
2
13
2
5
2
BIT 7BIT 0
Voltage measurement updates above this unsigned threshold set its corresponding alarm or warning bit.
Voltage measurements equal to or below this threshold clear its alarm or warning bit.
Lower Memory, Register 12h–13h: BMON ALARM LO
Lower Memory, Register 16h–17h: BMON WARN LO
Lower Memory, Register 1Ah–1Bh: PMON ALARM LO
Lower Memory, Register 1Eh–1Fh: PMON WARN LO
FACTORY DEFAULT 0000h
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WLOWER)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (SEE)
12
2
4
2
11
2
3
2
10
2
2
2
9
2
1
2
8
2
0
2
12h, 16h,
1Ah, 1Eh
13h, 17h,
1Bh, 1Fh
15
2
7
2
14
2
6
2
13
2
5
2
12
2
4
2
11
2
3
2
10
2
2
2
2
2
BIT 7BIT 0
Voltage measurement updates below this unsigned threshold set its corresponding alarm or warning bit. Voltage
measurements equal to or above this threshold clear its alarm or warning bit.
POWER-ON VALUEX0XX 0XXXb
READ ACCESSAll
WRITE ACCESSSee below
A2h AND B2h MEMORYMixture of common memory locations and different memory locations (see below)
DS1876
Write AccessN/AAllN/AAllAllN/AN/AN/A
MEMORY TYPEVolatile
6Eh
<D>
TXDS
BIT 7BIT 0
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
<D>
TXDC
TXDS1 [A2h]: TXD1 status bit. Reflects the logic state of the TXD1 pin (read-only).
0 = TXD1 pin is logic-low.
1 = TXD1 pin is logic-high.
TXDS2 [B2h]: TXD2 status bit. Reflects the logic state of the TXD2 pin (read-only).
0 = TXD2 pin is logic-low.
1 = TXD2 pin is logic-high.
TXDC1 [A2h]: TXD1 software control bit. This bit allows for software control that is identical to the
TXD1 pin. See the DACs as a Function of Transmit Disable (TXD1, TXD2) section for further information. Its value is wire-ORed with the logic value of the TXD1 pin (writable by all users).
0 = (default)
1 = Forces the device into a TXD1 state regardless of the value of the TXD1 pin.
TXDC2 [B2h]: TXD2 software control bit. This bit allows for software control that is identical to the
TXD2 pin. See the DACs as a Function of Transmit Disable (TXD1, TXD2) section for further information. Its value is wire-ORed with the logic value of the TXD2 pin (writable by all users).
0 = (default)
1 = Forces the device into a TXD2 state regardless of the value of the TXD2 pin.
IN1S [A2h or B2h]: IN1 status bit. Reflects the logic state of the IN1 pin (read-only).
0 = IN1 pin is logic-low.
1 = IN1 pin is logic-high.
RSELS [A2h or B2h]: RSEL status bit. Reflects the logic state of the RSEL pin (read-only).
0 = RSEL pin is logic-low.
1 = RSEL pin is logic-high.
RSELC [A2h or B2h]: RSEL software control bit. This bit allows for software control that is identical to the RSEL pin. Its value is wire-ORed with the logic value of the RSEL pin to create the
RSELOUT pin’s logic value (writable by all users).
0 = (default)
1 = Forces the device into a RSEL state regardless of the value of the RSEL pin.
TXFS1 [A2h]: Reflects state of the TXF1 pin (read-only).
0 = TXF1 pin is low.
1 = TXF1 pin is high.
TXFS2 [B2h]: Reflects the state of the TXF2 pin (read-only).
0 = TXF2 pin is low.
1 = TXF2 pin is high.
POWER-ON VALUE00h
READ ACCESSAll
WRITE ACCESSAll and DS1876 hardware
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPEVolatile
DS1876
6Fh
TEMP
RDY
BIT 7BIT 0
BITS 7:4
BITS 3:0RESERVED
VCC RDY
TEMP RDY, VCC RDY, BMON RDY, PMON RDY: Update of completed conversions. At power-on,
these bits are cleared and are set as each conversion is completed. These bits can be cleared so
that a completion of a new conversion is verified.
POWER-ON VALUE10h
READ ACCESSAll
WRITE ACCESSN/A
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
DS1876
MEMORY TYPEVolatile
70hTEMP HITEMP LOVCC HIVCC LOBMON HIBMON LOPMON HIPMON LO
BIT 7BIT 0
TEMP HI: High alarm status for temperature measurement.
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
TEMP LO: Low alarm status for temperature measurement.
0 = (default) Last measurement was equal to or above threshold setting.
1 = Last measurement was below threshold setting.
VCC HI: High alarm status for VCC measurement.
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
VCC LO: Low alarm status for VCC measurement. This bit is set when the VCC supply is below
the POA trip point value. It clears itself when a VCC measurement is completed and the value is
above the low threshold.
0 = Last measurement was equal to or above threshold setting.
1 = (default) Last measurement was below threshold setting.
BMON HI: High alarm status for BMON measurement.
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
BMON LO: Low alarm status for BMON measurement.
0 = (default) Last measurement was equal to or above threshold setting.
1 = Last measurement was below threshold setting.
PMON HI: High alarm status for PMON measurement.
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
PMON LO: Low alarm status for PMON measurement.
0 = (default) Last measurement was equal to or above threshold setting.
1 = Last measurement was below threshold setting.
POWER-ON VALUE00h
READ ACCESSAll
WRITE ACCESSN/A
A2h AND B2h MEMORYMixed A2h and B2h memory locations
MEMORY TYPEVolatile
DS1876
2
71hRESERVEDRESERVEDRESERVEDRESERVEDRESERVED
BIT 7BIT 0
BITS 7:3RESERVED
TXFOUTS: TXFOUT status. Indicates the state the open-drain output is attempting to achieve.
BIT 2
BIT 1
BIT 0
Lower Memory, Register 72h: ALARM
POWER-ON VALUE00h
READ ACCESSAll
WRITE ACCESSN/A
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPEVolatile
72hRESERVEDRESERVEDRESERVEDRESERVEDHBALRESERVEDTXP HITXP LO
BIT 7BIT 0
0 = TXFOUT is pulling low.
1 = TXFOUT is high impedance.
FETG: Status of internal signal FETG. The FETG signal is part of the internal shutdown logic.
0 = (default) FETG is low.
1 = FETG is high.
TXFINT: TXF interrupt. This bit is the wire-ORed logic of all alarms and warnings wire-ANDed with
their corresponding enable bits, plus the wire-ORed logic of HBAL, TXP HI, and TXP LO. The enable
bits are found in Table 01h/05h, Registers F8h–FFh.
1
<C>
TXFOUTS
<D>
FETG
<D>
TXFINT
BITS 7:4, 2RESERVED
HBAL: High bias alarm status; fast comparison. A TXD event clears this alarm.
0 = (default) Last comparison was below threshold setting.
1 = Last comparison was above threshold setting.
TXP HI: High alarm status TXP; fast comparison. A TXD event clears this alarm.
0 = (default) Last comparison was below threshold setting.
1 = Last comparison was above threshold setting.
TXP LO: Low alarm status TXP; fast comparison. A TXD event clears this alarm.
0 = (default) Last comparison was above threshold setting.
1 = Last comparison was below threshold setting.
SFP Controller with Dual LDD Interface
Lower Memory, Register 73h: RESERVED
POWER-ON VALUE
READ ACCESSN/A
WRITE ACCESSN/A
A2h AND B2h MEMORYN/A
DS1876
MEMORY TYPEN/A
This register is reserved.
Lower Memory, Register 74h: WARN
POWER-ON VALUE10h
READ ACCESSAll
WRITE ACCESSN/A
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPEVolatile
74hTEMP HITEMP LOVCC HIVCC LOBMON HIBMON LOPMON HIPMON LO
BIT 7BIT 0
TEMP HI: High warning status for temperature measurement.
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
TEMP LO: Low warning status for temperature measurement.
0 = (default) Last measurement was equal to or above threshold setting.
1 = Last measurement was below threshold setting.
VCC HI: High warning status for VCC measurement.
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
VCC LO: Low warning status for VCC measurement. This bit is set when the VCC supply is below
the POA trip-point value. It clears itself when a VCC measurement is completed and the value is
above the low threshold.
0 = Last measurement was equal to or above threshold setting.
1 = (default) Last measurement was below threshold setting.
BMON HI: High warning status for BMON measurement.
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
BMON LO: Low warning status for BMON measurement.
0 = (default) Last measurement was equal to or above threshold setting.
1 = Last measurement was below threshold setting.
PMON HI: High warning status for PMON measurement.
0 = (default) Last measurement was equal to or below threshold setting.
1 = Last measurement was above threshold setting.
PMON LO: Low warning status for PMON measurement.
0 = (default) Last measurement was equal to or above threshold setting.
1 = Last measurement was below threshold setting.
POWER-ON VALUEFFFF FFFFh
READ ACCESSN/A
WRITE ACCESSAll
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
DS1876
7Bh2
7Ch2
7Dh2
7Eh2
31
23
15
7
30
2
22
2
14
2
6
2
29
2
21
2
13
2
5
2
28
2
20
2
12
2
4
2
27
2
19
2
11
2
3
2
26
2
18
2
10
2
2
2
25
2
17
2
9
2
1
2
BIT 7BIT 0
There are two passwords for the DS1876. Each password is 4 bytes long. The lower level password (PW1) has
all the access of a normal user plus those made available with PW1. The higher level password (PW2) has all the
access of PW1 plus those made available with PW2. The values of the passwords reside in EEPROM inside PW2
memory. At power-up, all PWE bits are set to 1. All reads at this location are 0.
POWER-ON VALUETBLSELPON (Table 02h, Register C7h)
READ ACCESSAll
WRITE ACCESSAll
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
DS1876
MEMORY TYPEVolatile
7Fh2
7
BIT 7BIT 0
The upper memory tables of the DS1876 are accessible by writing the desired table value in this register. The
power-on value of this register is defined by the value written to TBLSELPON (Table 02h, Register C7h).
6
2
5
2
4
2
3
2
2
2
1
2
Table 01h Register Descriptions
Table 01h, Register 80h–F7h: EEPROM
POWER-ON VALUE00h
READ ACCESSPW2 or (PW1 and RWTBL1A) or (PW1 and RTBL1A)
WRITE ACCESSPW2 or (PW1 and RWTBL1A)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (EE)
POWER-ON VALUE00h
READ ACCESSPW2 or (PW1 and RWTBL1C) or (PW1 and RTBL1C)
WRITE ACCESSPW2 or (PW1 and RWTBL1C)
A2h AND B2h MEMORY
MEMORY TYPENonvolatile (SEE)
DS1876
3
Mixture of common memory locations and different memory locations (see the
descriptions below)
<C>
F8h
TEMP HI
BIT 7BIT 0
Layout is identical to ALARM3 in Lower Memory, Register 70h. Enables alarms to create TXFINT (Lower Memory,
Register 71h) logic. The MASK bit (Table 02h, Register 88h) determines whether this memory exists in Table 01h or 05h.
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
<C>
TEMP LO
TEMP HI [A2h or B2h]:
0 = Disables interrupt from TEMP HI alarm.
1 = Enables interrupt from TEMP HI alarm.
TEMP LO [A2h or B2h]:
0 = Disables interrupt from TEMP LO alarm.
1 = Enables interrupt from TEMP LO alarm.
VCC HI [A2h or B2h]:
0 = Disables interrupt from VCC HI alarm.
1 = Enables interrupt from VCC HI alarm.
VCC LO [A2h or B2h]:
0 = Disables interrupt from VCC LO alarm.
1 = Enables interrupt from VCC LO alarm.
BMON1 HI [A2h]:
0 = Disables interrupt from BMON1 HI alarm.
1 = Enables interrupt from BMON1 HI alarm.
BMON2 HI [B2h]:
0 = Disables interrupt from BMON2 HI alarm.
1 = Enables interrupt from BMON2 HI alarm.
BMON1 LO [A2h]:
0 = Disables interrupt from BMON1 LO alarm.
1 = Enables interrupt from BMON1 LO alarm.
BMON2 LO [B2h]:
0 = Disables interrupt from BMON2 LO alarm.
1 = Enables interrupt from BMON2 LO alarm.
PMON1 HI [A2h]:
0 = Disables interrupt from PMON1 HI alarm.
1 = Enables interrupt from PMON1 HI alarm.
PMON2 HI [B2h]:
0 = Disables interrupt from PMON2 HI alarm.
1 = Enables interrupt from PMON2 HI alarm.
PMON1 LO [A2h]:
0 = Disables interrupt from PMON1 LO alarm.
1 = Enables interrupt from PMON1 LO alarm.
PMON2 LO [B2h]:
0 = Disables interrupt from PMON2 LO alarm.
1 = Enables interrupt from PMON2 LO alarm.
POWER-ON VALUE
READ ACCESSN/A
WRITE ACCESSN/A
A2h AND B2h MEMORYN/A
DS1876
MEMORY TYPEN/A
This register is reserved.
Table 01h, Register FAh: ALARM EN
POWER-ON VALUE00h
READ ACCESSPW2 or (PW1 and RWTBL1C) or (PW1 and RTBL1C)
WRITE ACCESSPW2 or (PW1 and RWTBL1C)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (SEE)
FAhRESERVEDRESERVEDRESERVEDRESERVEDHBALRESERVEDTXP HITXP LO
BIT 7BIT 0
Layout is identical to ALARM1 in Lower Memory, Register 72h. Enables alarms to create internal signal FETG (see
Figure 9). The MASK bit (Table 02h, Register 88h) determines whether this memory exists in Table 01h or 05h.
BITS 7:4, 2RESERVED
HBAL: Enables alarm to create internal signal FETG.
BIT 3
BIT 1
BIT 0
0 = Disables interrupt from HBAL alarm.
1 = Enables interrupt from HBAL alarm.
TXP HI: Enables alarm to create internal signal FETG.
0 = Disables interrupt from TXP HI alarm.
1 = Enables interrupt from TXP HI alarm.
TXP LO: Enables alarm to create internal signal FETG.
0 = Disables interrupt from TXP LO alarm.
1 = Enables interrupt from TXP LO alarm.
1
Table 01h, Register FBh: RESERVED
POWER-ON VALUE
READ ACCESSN/A
WRITE ACCESSN/A
A2h AND B2h MEMORYN/A
MEMORY TYPEN/A
POWER-ON VALUE00h
READ ACCESSPW2 or (PW1 and RWTBL1C) or (PW1 and RTBL1C)
WRITE ACCESSPW2 or (PW1 and RWTBL1C)
A2h AND B2h MEMORY
MEMORY TYPENonvolatile (SEE)
DS1876
3
Mixture of common memory locations and different memory locations (see the bit
descriptions)
<C>
FCh
TEMP HI
BIT 7BIT 0
Layout is identical to WARN3 in Lower Memory, Register 74h. Enables warnings to create TXFINT (Lower Memory,
Register 71h) logic. The MASK bit (Table 02h, Register 88h) determines whether this memory exists in Table 01h or 05h.
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
<C>
TEMP LO
TEMP HI [A2h or B2h]:
0 = Disables interrupt from TEMP HI warning.
1 = Enables interrupt from TEMP HI warning.
TEMP LO [A2h or B2h]:
0 = Disables interrupt from TEMP LO warning.
1 = Enables interrupt from TEMP LO warning.
VCC HI [A2h or B2h]:
0 = Disables interrupt from VCC HI warning.
1 = Enables interrupt from VCC HI warning.
VCC LO [A2h or B2h]:
0 = Disables interrupt from VCC LO warning.
1 = Enables interrupt from VCC LO warning.
BMON1 HI [A2h]:
0 = Disables interrupt from BMON1 HI warning.
1 = Enables interrupt from BMON1 HI warning.
BMON1 HI [B2h]:
0 = Disables interrupt from BMON2 HI warning.
1 = Enables interrupt from BMON2 HI warning.
BMON1 LO [A2h]:
0 = Disables interrupt from BMON1 LO warning.
1 = Enables interrupt from BMON1 LO warning.
BMON2 LO [B2h]:
0 = Disables interrupt from BMON2 LO warning.
1 = Enables interrupt from BMON2 LO warning.
PMON1 HI [A2h]:
0 = Disables interrupt from PMON1 HI warning.
1 = Enables interrupt from PMON1 HI warning.
PMON2 HI [B2h]:
0 = Disables interrupt from PMON2 HI warning.
1 = Enables interrupt from PMON2 HI warning.
PMON1 LO [A2h]:
0 = Disables interrupt from PMON1 LO warning.
1 = Enables interrupt from PMON1 LO warning.
PMON2 LO [B2h]:
0 = Disables interrupt from PMON2 LO warning.
1 = Enables interrupt from PMON2 LO warning.
POWER-ON VALUE
READ ACCESSN/A
WRITE ACCESSN/A
A2h AND B2h MEMORYN/A
DS1876
Table 02h, Register 80h: MODE
MEMORY TYPEN/A
These registers are reserved.
Table 02h Register Descriptions
POWER-ON VALUE7Fh
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
80hSEEBMOD2ENQT2ENAPC2ENAENMOD1ENQT1ENAPC1EN
BIT 7BIT 0
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
SEEB:
0 = (default) Enables EEPROM writes to SEE bytes.
1 = Disables EEPROM writes to SEE bytes during configuration, so that the configuration of the
part is not delayed by the EE cycle time. Once the values are known, write this bit to a 0 and write
the SEE locations again for data to be written to the EEPROM.
MOD2EN:
0 = MOD2 DAC is writable by the user and the LUT recalls are disabled. This allows the user to
interactively test their modules by writing the values for MOD2. The output is updated with the new
value at the end of the write cycle. The I2C STOP condition is the end of the write cycle.
1 = (default) Enables automatic control of the LUT for MOD2 DAC.
QT2EN:
0 = QTs (HBIAS, TXP HI, TXP LO) for transmitter 2 are writable by the user and the LUT recalls are
disabled. This allows the user to interactively test their modules by writing to the QT thresholds.
The thresholds are updated with the new values at the end of the write cycle. The I2C STOP
condition is the end of the write cycle.
1 = (default) Enables automatic control of the LUT QTs for transmitter 2.
APC2EN:
0 = APC2 DAC is writable by the user and the LUT recalls are disabled. This allows the user to
interactively test their modules by writing the values for APC2. The output is updated with the new
value at the end of the write cycle. The I2C STOP condition is the end of the write cycle.
1 = (default) Enables automatic control of the LUT for APC2 DAC.
AEN:
0 = The temperature-calculated index value TINDEX is writable by the user and the updates
of calculated indexes are disabled. This allows the user to interactively test their modules by
controlling the indexing for the LUTs. The recalled values from the LUTs appear in the DAC
registers after the next completion of a temperature conversion.
1 = (default) The temperature-calculated index value TINDEX is used to control the LUTs.
0 = MOD1 DAC is writable by the user and the LUT recalls are disabled. This allows the user to
BIT 2
BIT 1
BIT 0
Table 02h, Register 81h: TEMPERATURE INDEX (TINDEX)
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and AEN = 0) or (PW1 and RWTBL2 and AEN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
interactively test their modules by writing the values for MOD1. The output is updated with the new
value at the end of the write cycle. The I2C STOP condition is the end of the write cycle.
1 = (default) Enables automatic control of the LUT for MOD1 DAC.
QT1EN:
0 = QTs (HBIAS, TXP HI, TXP LO) for transmitter 1 are writable by the user and the LUT recalls are
disabled. This allows the user to interactively test their modules by writing to the QT thresholds.
The thresholds are updated with the new values at the end of the write cycle. The I2C STOP
condition is the end of the write cycle.
1 = (default) Enables automatic control of the LUT QTs for transmitter 1.
APC1EN:
0 = APC1 DAC is writable by the user and the LUT recalls are disabled. This allows the user to
interactively test their modules by writing the values for APC1. The output is updated with the new
value at the end of the write cycle. The I2C STOP condition is the end of the write cycle.
1 = (default) Enables automatic control of the LUT for APC1 DAC.
DS1876
81h2
7
BIT 7BIT 0
Holds the calculated index based on the temperature measurement. This index is used for the address during lookup
of Tables 04h and 06h. Temperature measurements below -40NC or above +102NC are clamped to 80h and C7h,
respectively. The calculation of TINDEX is as follows:
For the temperature-indexed LUTs (2NC), the index used during the lookup function for each table is as follows:
Table 04h (MOD)1TINDEX
Table 06h (APC)1TINDEX
For the 8-position LUT tables, the following table shows the lookup function:
TINDEX1000_0xxx1001_0xxx1001_1xxx1010_0xxx1010_1xxx1011_0xxx1011_1xxx11xx_xxxx
BYTEF8F9FAFBFCFDFEFF
TEMP (NC)
FACTORY DEFAULTC0h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
0 = Disabled. TXP HI and HBIAS QT alarms of transmitter 2 immediately create FETG.
1 = (default) Enabled. TXP HI and HBIAS QT alarms of transmitter 2 do not create FETG until the
timeout of the TXD
QTHEXT1: QT high extension for transmitter 1.
0 = Disabled. TXP HI and HBIAS QT alarms of transmitter 1 immediately create FETG.
1 = (default) Enabled. TXP HI and HBIAS QT alarms of transmitter 1 do not create FETG until the
timeout of the TXD
ASEL: Address select.
0 = (default) Device address is A2h for transmitter 1 and B2h for transmitter 2.
1 = The DEVICE ADDRESS register (Table 02h, Register 8Bh) is used to determine the main device
address.
time interval.
EXT
time interval.
EXT
DS1876
BIT 3
BIT 2
BIT 1
BIT 0
MASK:
0 = (default) Alarm-enable row exists at Table 01h, Registers F8h–FFh. Table 05h, Registers F8h–
FFh are empty.
1 = Alarm-enable row exists at Table 05h, Registers F8h–FFh. Table 01h, Registers F8h–FFh are
empty.
INVRSOUT: Allow for inversion of the RSELOUT pin (see Figure 10).
0 = (default) RSELOUT is not inverted.
1 = RSELOUT is inverted.
INVTXFOUT2: Allow for inversion of signal driven by the TXF2 input pin.
0 = (default) TXF2 signal is not inverted.
1 = TXF2 signal is inverted.
INVTXFOUT1: Allow for inversion of signal driven by the TXF1 input pin.
0 = (default) TXF1 signal is not inverted.
1 = TXF1 signal is inverted.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
0 = IN1 pin’s logic controls OUT1 pin.
1 = OUT1 is active (bit 6 defines the polarity).
INVOUT1: Inverts the active state for OUT1 (see Figure 10).
0 = Noninverted.
1 = Inverted.
ALATCH2: ADC alarm’s comparison latch for transmitter 2. Latches alarms in Lower Memory,
Registers 70h–71h.
0 = ADC alarm and flags reflect the status of the last comparison.
1 = ADC alarm flags remain set.
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
QTLATCH2: QT’s comparison latch for transmitter 2. Latches QT alarms in Lower Memory,
Registers 72h–73h and 76h.
0 = QT alarm and warning flags reflect the status of the last comparison.
1 = QT alarm and warning flags remain set.
WLATCH2: ADC warning’s comparison latch for transmitter 2. Latches warnings in Lower Memory,
Registers 74h–75h.
0 = ADC warning flags reflect the status of the last comparison.
1 = ADC warning flags remain set.
ALATCH1: ADC alarm’s comparison latch for transmitter 1. Latches alarms in Lower Memory,
Registers 70h–71h.
0 = ADC alarm and flags reflect the status of the last comparison.
1 = ADC alarm flags remain set.
QTLATCH1: QT’s comparison latch for transmitter 1. Latches QT alarms in Lower Memory,
Registers 72h–73h and 76h.
0 = QT alarm and warning flags reflect the status of the last comparison.
1 = QT alarm and warning flags remain set.
WLATCH1: ADC warning’s comparison latch for transmitter 1. Latches warnings in Lower Memory,
Registers 74h–75h.
0 = ADC warning flags reflect the status of the last comparison.
1 = ADC warning flags remain set.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
0 = FETG2, an internal signal, has no effect on TXDOUT2.
1 = FETG2 is enabled and ORed with other possible signals to create TXDOUT2.
TXDFLT2: See Figure 9.
0 = TXF2 pin has no effect on TXDOUT2.
1 = TXF2 pin is enabled and ORed with other possible signals to create TXDOUT2.
TXDIO2: See Figure 9.
0 = (default) TXD2 input signal is enabled and ORed with other possible signals to create TXDOUT2.
1 = TXD2 input signal has no effect on TXDOUT2.
TXDFG1: See Figure 9.
0 = FETG1, an internal signal, has no effect on TXDOUT1.
1 = FETG1 is enabled and ORed with other possible signals to create TXDOUT1.
TXDFLT1: See Figure 9.
0 = TXF1 pin has no effect on TXDOUT1.
1 = TXF1 pin is enabled and ORed with other possible signals to create TXDOUT1.
TXDIO1: See Figure 9.
0 = (default) TXD1 input signal is enabled and ORed with other possible signals to create TXDOUT1.
1 = TXD1 input signal has no effect on TXDOUT1.
DS1876
Table 02h, Register 8Bh: DEVICE ADDRESS
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
8BhSEESEESEESEE2
BIT 7BIT 0
This value becomes the I2C slave address for the main memory when the ASEL bit (Table 02h, Register 88h)
is set. If A0h is programmed to this register, the auxiliary memory is disabled. For example, writing xxxx_010x
makes the main device addresses A4h and B4h.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
DS1876
MEMORY TYPENonvolatile (SEE)
8ChRESERVEDHBIAS2
BIT 7BIT 0
The upper nibble of this byte controls the full-scale range of the QT monitoring for BMON2. The lower nibble of
this byte controls the full-scale range for the QT monitoring for PMON2.
BITS 7, 3RESERVED (default = 0)
HBIAS2
BMON2. Default is 000b and creates a full scale of 1.25V.
BITS 6:4
TXP2
PMON2. Default is 000b and creates a full scale of 2.5V.
BITS 2:0
2
HBIAS2
2
: HBIAS2 full-scale ranging: 3-bit value to select the full-scale comparison voltage for
[2:0]
HBIAS2
: TXP2 full-scale ranging: 3-bit value to select the full-scale comparison voltage for
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
DS1876
1
8DhRESERVEDHBIAS1
BIT 7BIT 0
The upper nibble of this byte controls the full-scale range of the QT monitoring for BMON1. The lower nibble of
this byte controls the full-scale range for the QT monitoring for PMON1.
BITS 7, 3RESERVED (default = 0)
HBIAS1
BMON1. Default is 000b and creates a full scale of 1.25V.
BITS 6:4
TXP1
[2:0]
PMON1. Default is 000b and creates a full scale of 2.5V.
BITS 2:0
HBIAS1
2
: HBIAS1 full-scale ranging: 3-bit value to select the full-scale comparison voltage for
[2:0]
HBIAS1
: TXP1 full-scale ranging: 3-bit value to select the full-scale comparison voltage for
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
DS1876
MEMORY TYPENonvolatile (SEE)
8EhRESERVEDBMON2
BIT 7BIT 0
Allows for right-shifting the final answer of BMON2 and PMON2 voltage measurements. This allows for scaling the
measurement to the smallest full-scale voltage and then right-shifting the final result so the reading is weighted to the
correct LSB.
BMON2
2
BMON2
1
Table 02h, Register 8Fh: RIGHT-SHIFT1 (RSHIFT1)
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
8FhRESERVEDBMON1
BIT 7BIT 0
Allows for right-shifting the final answer of BMON1 and PMON1 voltage measurements. This allows for scaling the
measurements to the smallest full-scale voltage and then right-shifting the final result so the reading is weighted to
the correct LSB.
FACTORY CALIBRATED
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
92h, 94h,
96h, 98h,
9Ah, 9Ch,
9Eh
93h, 95h,
97h, 99h,
9Bh, 9Dh,
9Fh
15
2
7
2
14
2
6
2
2
2
BIT 7BIT 0
13
DS1876
12
2
5
4
2
11
2
3
2
10
2
2
2
9
2
1
2
8
2
0
2
Controls the scaling or gain of the full-scale voltage measurements. The factory-calibrated value produces an FS
voltage of 6.5536V for VCC and 2.5V for BMON2, PMON2, BMON1, and PMON1.
Table 02h, Register A0h–A1h: INTERNAL TEMP OFFSET
FACTORY CALIBRATED
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
A0hS2
A1h2
1
8
0
2
BIT 7BIT 0
Allows for offset control of temperature measurement if desired. The final result must be XORed with BB40h
before writing to this register. Factory calibration contains the desired value for a reading in degrees Celsius.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
A2h, A4h,
A6h, A8h,
AAh, ACh,
AEh
A3h, A5h,
A7h, A9h,
ABh, ADh,
AFh
SS2
9
2
8
2
BIT 7BIT 0
15
7
2
14
2
6
2
13
2
5
2
12
2
4
2
11
2
3
2
10
2
2
2
Allows for offset control of these voltage measurements if desired. This number is two’s complement.
Table 02h, Register B0h–B3h: PW1
FACTORY DEFAULTFFFF FFFFh
READ ACCESSN/A
WRITE ACCESSPW2 or (PW1 and WPW1)
MEMORY TYPENonvolatile (SEE)
B0h2
B1h2
B2h2
B3h2
31
23
15
7
BIT 7BIT 0
The PWE value is compared against the value written to this location to enable PW1 access. At power-on, the
PWE value is set to all ones. Thus, writing these bytes to all ones grants PW1 access on power-on without writing
the password entry. All reads of this register are 00h.
The PWE value is compared against the value written to this location to enable PW2 access. At power-on, the
PWE value is set to all ones. Thus, writing these bytes to all ones grants PW2 access on power-on without writing
the password entry. All reads of this register are 00h.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and QT2EN = 0) or (PW1 and RWTBL2 and QT2EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
29
2
21
2
13
2
5
2
28
2
20
2
12
2
4
2
27
2
19
2
11
2
3
2
26
2
18
2
10
2
2
2
25
2
17
2
9
2
1
2
24
2
16
2
8
2
0
2
B9h2
The digital value used for the HBIAS2 reference and recalled from Table 06h (Registers E0h–E7h) (transmitter 2) at
the adjusted memory address found in TINDEX. This register is updated at the end of the temperature conversion.
Comparisons greater than V
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and QT2EN = 0) or (PW1 and RWTBL2 and QT2EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
DS1876
MEMORY TYPEVolatile
BAh2
7
BIT 7BIT 0
The digital value used for the HTXP2 reference and recalled from Table 06h (Registers E8h–EFh) (transmitter 2) at
the adjusted memory address found in TINDEX. This register is updated at the end of the temperature conversion.
Comparisons greater than V
6
2
Table 02h, Register BBh: LTXP2 DAC
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and QT2EN = 0) or (PW1 and RWTBL2 and QT2EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
BBh2
7
BIT 7BIT 0
The digital value used for the LTXP2 reference and recalled from Table 06h (Registers F0h–F7h) (transmitter 2) at
the adjusted memory address found in TINDEX. This register is updated at the end of the temperature conversion.
Comparisons less than V
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and QT1EN = 0) or (PW1 and RWTBL2 and QT1EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
DS1876
BDh2
7
6
2
BIT 7BIT 0
The digital value used for the HBIAS1 reference and recalled from Table 06h (Registers E0h–E7h) (transmitter 1) at
the adjusted memory address found in TINDEX. This register is updated at the end of the temperature conversion.
Comparisons greater than V
Table 02h, Register BEh: HTXP1 DAC
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and QT1EN = 0) or (PW1 and RWTBL2 and QT1EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
BEh2
7
BIT 7BIT 0
The digital value used for the HTXP1 reference and recalled from Table 06h (Registers E8h–EFh) (transmitter 1) at
the adjusted memory address found in TINDEX. This register is updated at the end of the temperature conversion.
Comparisons great than V
6
2
5
2
compared against V
HBIAS1
5
2
compared against V
HTXP1
4
2
BMON1
VHBIAS1DAC
HBIAS1
VHTXP1DAC
HTXP1
Full Scale
=×
256
4
2
PMON1
Full Scale
=×
256
3
2
create an HBAL alarm.
3
2
create a TXP HI alarm.
2
2
2
2
1
2
1
2
0
2
0
2
Table 02h, Register BFh: LTXP1 DAC
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and QT1EN = 0) or (PW1 and RWTBL2 and QT1EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
BFh2
7
BIT 7BIT 0
The digital value used for the LTXP1 reference and recalled from Table 06h (Registers F0h–F7h) (transmitter 1) at
the adjusted memory address found in TINDEX. This register is updated at the end of the temperature conversion.
Comparisons less than V
FACTORY DEFAULT10h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
RWTBL1C: Table 01h or 05h bytes F8–FFh. Table address is dependent on MASK bit (Table 02h,
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Register 88h).
0 = (default) Read and write access for PW2 only.
1 = Read and write access for both PW1 and PW2.
RWTBL2: Table 02h. Writing a nonvolatile value to this bit requires PW2 access.
0 = (default) Read and write access for PW2 only.
1 = Read and write access for both PW1 and PW2.
RWTBL1A: Table 01h, Registers 80h–BFh.
0 = Read and write access for PW2 only.
1 = (default) Read and write access for both PW1 and PW2.
RWTBL1B: Table 01h, Registers C0h–F7h.
0 = (default) Read and write access for PW2 only.
1 = Read and write access for both PW1 and PW2.
WLOWER: Bytes 00h–5Fh in main memory. All users can read this area.
0 = (default) Write access for PW2 only.
1 = Write access for both PW1 and PW2.
WAUXA: Auxiliary memory, Registers 00h–7Fh. All users can read this area.
0 = (default) Write access for PW2 only.
1 = Write access for both PW1 and PW2.
WAUXB: Auxiliary memory, Registers 80h–FFh. All users can read this area.
0 = (default) Write access for PW2 only.
1 = Write access for both PW1 and PW2.
FACTORY DEFAULT03h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
C1hRWTBL46RTBL1CRTBL2RTBL1ARTBL1BWPW1WAUXAUWAUXBU
BIT 7BIT 0
RWTBL46: Tables 04h and 06h.
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
0 = (default) Read and write access for PW2 only.
1 = Read and write access for PW1 and PW2.
RTBL1C: Table 01h or Table 05h, Registers F8h–FFh. Table address is dependent on MASK bit
(Table 02h, Register 88h).
0 = (default) Read and write access for PW2 only.
1 = Read access for PW1 and PW2.
RTBL2: Table 02h.
0 = (default) Read and write access for PW2 only.
1 = Read access for PW1 and PW2.
RTBL1A: Table 01h, Registers 80h–BFh.
0 = (default) Read and write access for PW2 only.
1 = Read access for PW1 and PW2.
RTBL1B: Table 01h, Registers C0h–F7h.
0 = (default) Read and write access for PW2 only.
1 = Read access for PW1 and PW2.
WPW1: Register PW1 (Table 02h, Registers B0h–B3h). For security purposes these registers are
not readable.
0 = (default) Write access for PW2 only.
1 = Write access for PW1 and PW2.
WAUXAU: Auxiliary memory, Registers 00h–7Fh. All users can read this area.
0 = Write access for PW2 only.
1 = (default) Write access for user, PW1, and PW2.
WAUXBU: Auxiliary memory, Registers 80h–FFh. All users can read this area.
0 = Write access for PW2 only.
1 = (default) Write access for user, PW1, and PW2.
FACTORY DEFAULT0Fh
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MOD2P: MOD2 DAC polarity. The MOD2 DAC (Table 02h, Registers C8h–C9h) range is
000h–3FFh. A setting of 000h creates a pulse-density of zero and 3FFh creates a pulse-density of
BIT 3
BIT 2
BIT 1
BIT 0
1023/1024. This polarity bit allows the user to use GND or V
of MOD2 DAC is 000h; thus an application that needs V
inverted polarity.
0 = Normal polarity. A setting of 000h results in a pulse-density output of zero held at GND, and a
setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at V
1 = Inverted polarity. A setting of 000h results in a pulse-density output of zero held at V
a setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at GND.
APC2P: APC2 DAC polarity. The APC2 DAC (Table 02h, Registers CAh–CBh) range is 000h–3FFh.
A setting of 000h creates a pulse-density of zero, and 3FFh creates a pulse-density of 1023/1024.
This polarity bit allows the user to use GND or V
is 000h; thus an application that needs V
0 = Normal polarity. A setting of 000h results in a pulse-density output of zero held at GND, and a
setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at V
1 = Inverted polarity. A setting of 000h results in a pulse-density output of zero held at V
a setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at GND.
MOD1P: MOD1 DAC polarity. The MOD1 DAC (Table 02h, Registers CCh–CDh) range is
000h–3FFh. A setting of 000h creates a pulse-density of zero and 3FFh creates a pulse-density of
1023/1024. This polarity bit allows the user to use GND or V
of MOD1 DAC is 000h; thus an application that needs V
inverted polarity.
0 = Normal polarity. A setting of 000h results in a pulse-density output of zero held at GND, and a
setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at V
1 = Inverted polarity. A setting of 000h results in a pulse-density output of zero held at V
a setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at GND.
APC1P: APC1 DAC polarity. The APC1 DAC (Table 02h, Registers CEh–CFh) range is 000h–3FFh.
A setting of 000h creates a pulse-density of zero, and 3FFh creates a pulse-density of 1023/1024.
This polarity bit allows the user to use GND or V
DAC is 000h; thus an application that needs V
polarity.
0 = Normal polarity. A setting of 000h results in a pulse-density output of zero held at GND, and a
setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at V
1 = Inverted polarity. A setting of 000h results in a pulse-density output of zero held at V
a setting of 3FFh results in a pulsed-density output of 1023/1024 held mostly at GND.
to be the off state should use the inverted polarity.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESSPW2 or (PW1 and RWTBL2)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPENonvolatile (SEE)
DS1876
C7h2
7
BIT 7BIT 0
Chooses the initial value for the TBL SEL byte (Lower Memory, Register 7Fh) at power-on.
6
2
Table 02h, Register C8h–C9h: MOD2 DAC
FACTORY DEFAULT0000h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and MOD2EN = 0) or (PW1 and RWTBL2 and MOD2EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
C8h0000002
C9h2
7
BIT 7BIT 0
The digital value used for MOD2 DAC. It is the result of LUT4 plus MOD2 OFFSET times 4 recalled from Table
04h (Registers F8h–FFh) at the adjusted memory address found in TINDEX. This register is updated at the end of
the temperature conversion.
FACTORY DEFAULT0000h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and APC2EN = 0) or (PW1 and RWTBL2 and APC2EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
DS1876
MEMORY TYPEVolatile
CAh0000002
CBh2
7
6
2
BIT 7BIT 0
The digital value used for APC2 DAC. It is the result of LUT6 plus APC2 OFFSET times 4 recalled from Table
06h (Registers F8h–FFh) at the adjusted memory address found in TINDEX. This register is updated at the end
of the temperature conversion.
Table 02h, Register CCh–CDh: MOD1 DAC
FACTORY DEFAULT0000h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and MOD1EN = 0) or (PW1 and RWTBL2 and MOD1EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
CCh0000002
CDh2
BIT 7BIT 0
7
6
2
5
2
4
2
3
2
APC2 DAC = LUT6 + APC2 OFFSET x 4
V
VAPC2 DAC
APC2
5
2
REFIN
=×
1024
4
2
3
2
9
2
2
2
2
1
2
9
1
2
8
2
0
2
8
2
0
2
The digital value used for MOD1 DAC. It is the result of LUT4 plus MOD1 OFFSET times 4 recalled from Table
04h (Registers F8h–FFh) at the adjusted memory address found in TINDEX. This register is updated at the end
of the temperature conversion.
FACTORY DEFAULT0000h
READ ACCESSPW2 or (PW1 and RWTBL2) or (PW1 and RTBL2)
WRITE ACCESS(PW2 and APC1EN = 0) or (PW1 and RWTBL2 and APC1EN = 0)
A2h AND B2h MEMORYCommon A2h and B2h memory location
MEMORY TYPEVolatile
DS1876
CEh0000002
CFh2
7
BIT 7BIT 0
The digital value used for APC1 DAC. It is the result of LUT6 plus APC1 OFFSET times 4 recalled from Table
06h (Registers F8h–FFh) at the adjusted memory address found in TINDEX. This register is updated at the end
of the temperature conversion.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
DS1876
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (EE)
80h–C7h2
BIT 7BIT 0
Digital value for the MOD1 DAC (A2h address) and MOD2 DAC (B2h address) outputs. The MODULATION LUT
is a set of registers assigned to hold the temperature profile for the MOD1 and MOD2 DACs. The temperature
measurement is used to index the LUT (TINDEX, Table 02h, Register 81h) in 2NC increments from -40NC to
+102NC, starting at 80h in Table 04h. Register 80h defines the -40NC to -38NC MOD output, Register 81h defines
-38NC to -36NC MOD output, and so on. Values recalled from this EEPROM memory table are written into the
MOD1 and MOD2 DACs (Table 02h, Registers C8h–C9h, CCh–CDh) locations that hold the values until the next
temperature conversion. The part can be placed into a manual mode (MOD1EN and MOD2EN bits, Table 02h,
Register 80h), where MOD1 and MOD2 DACs are directly controlled for calibration. If the temperature compensation functionality is not required, program the entire Table 04h to the desired modulation setting.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (EE)
DS1876
F8h–FFh2
BIT 7BIT 0
The digital value for the temperature offset of the MOD1 and MOD2 DAC outputs.
FAh
FBh
FCh
FDh
FEh
The MOD DAC is a 10-bit value. The MODULATION LUT is an 8-bit LUT. The MOD OFFSET LUT times 4 plus
the MODULATION LUT makes use of the entire 10-bit range.
9
F8h
F9h
FFh
8
2
Less than or equal to -8NC
Greater than -8NC up to +8NC
Greater than +8NC up to +24NC
Greater than +24NC up to +40NC
Greater than +40NC up to +56NC
Greater than +56NC up to +72NC
Greater than +72NC up to +88NC
Greater than +88NC
Table 06h, Register 80h–C7h: APC LUT
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (EE)
7
2
6
2
5
2
4
2
3
2
2
2
Table 06h Register Descriptions
80h–C7h2
BIT 7BIT 0
The digital value for the APC1 DAC (A2h address) and APC2 DAC (B2h address) outputs. The APC LUT is a
set of registers assigned to hold the temperature profile for the APC1 and APC2 DACs. The temperature measurement is used to index the LUT (TINDEX, Table 02h, Register 81h) in 2NC increments from -40NC to +102NC,
starting at 80h. Register 80h defines the -40NC to -38NC APC output, Register 81h defines -38NC to -36NC APC
output, and so on. Values recalled from this EEPROM memory table are written into the APC1 and APC2 DACs
(Table 02h, Registers CAh–CBh, CEh–CFh) locations that hold the values until the next temperature conversion. The part can be placed into a manual mode (APC1EN and APC2EN bits, Table 02h, Register 80h), where
APC1 and APC2 DACs are directly controlled for calibration. If the temperature compensation functionality is not
required, program the entire Table 06h to the desired APC setting.
FACTORY DEFAULT00h
READ ACCESSN/A
WRITE ACCESSN/A
A2h AND B2h MEMORYN/A
DS1876
Table 06h, Register E0h–E7h: HBATH LUT
MEMORY TYPENone
These registers do not exist.
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (EE)
E0h–E7h2
BIT 7BIT 0
The high bias alarm threshold (HBATH) LUT is used to temperature compensate the bias QT threshold (HBIAS).
The table below shows the range of temperature for each byte’s location. The table shows a rising temperature;
for a falling temperature there is 1NC of hysteresis.
E0h
E1h
E2h
E3h
E4h
E5h
E6h
E7h
7
6
2
Less than or equal to -8NC
Greater than -8NC up to +8NC
Greater than +8NC up to +24NC
Greater than +24NC up to +40NC
Greater than +40NC up to +56NC
Greater than +56NC up to +72NC
Greater than +72NC up to +88NC
Greater than +88NC
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (EE)
DS1876
E8h–EFh2
BIT 7BIT 0
The HTXP LUT is used to temperature compensate the transmit power-high QT threshold (TXP HI). The table
below shows the range of temperature for each byte’s location. The table shows a rising temperature; for a falling temperature there is 1NC of hysteresis.
E8h
E9h
EAh
EBh
ECh
EDh
EEh
EFh
7
6
2
Less than or equal to -8NC
Greater than -8NC up to +8NC
Greater than +8NC up to +24NC
Greater than +24NC up to +40NC
Greater than +40NC up to +56NC
Greater than +56NC up to +72NC
Greater than +72NC up to +88NC
Greater than +88NC
Table 06h, Register F0h–F7h: LTXP LUT
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
MEMORY TYPENonvolatile (EE)
5
2
4
2
3
2
2
2
1
2
0
2
F0h–F7h2
BIT 7BIT 0
The LTXP LUT is used to temperature compensate the transmit power-low QT threshold (TXP LO). The table
below shows the range of temperature for each byte’s location. The table shows a rising temperature; for a falling temperature there is 1NC of hysteresis.
Less than or equal to -8NC
Greater than -8NC up to +8NC
Greater than +8NC up to +24NC
Greater than +24NC up to +40NC
Greater than +40NC up to +56NC
Greater than +56NC up to +72NC
Greater than +72NC up to +88NC
Greater than +88NC
5
2
4
2
3
2
2
2
1
2
0
2
SFP Controller with Dual LDD Interface
Table 06h, Register F8h–FFh: APC OFFSET LUT
FACTORY DEFAULT00h
READ ACCESSPW2 or (PW1 and RWTBL46)
WRITE ACCESSPW2 or (PW1 and RWTBL46)
A2h AND B2h MEMORYDifferent A2h and B2h memory locations
DS1876
MEMORY TYPENonvolatile (EE)
F8h–FFh2
BIT 7BIT 0
The digital value for the temperature offset of the APC1 and APC2 DAC outputs.
FAh
FBh
FCh
FDh
FEh
The APC DAC is a 10-bit value. The APC LUT is an 8-bit LUT. The APC OFFSET LUT times 4 plus
the APC LUT makes use of the entire 10-bit range.
9
F8h
F9h
FFh
8
2
Less than or equal to -8NC
Greater than -8NC up to +8NC
Greater than +8NC up to +24NC
Greater than +24NC up to +40NC
Greater than +40NC up to +56NC
Greater than +56NC up to +72NC
Greater than +72NC up to +88NC
Greater than +88NC
7
2
Auxiliary Memory A0h, Register 00h–7Fh: EEPROM
FACTORY DEFAULT00h
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WAUXA) or (WAUXAU)
MEMORY TYPENonvolatile (EE)
FACTORY DEFAULT00h
READ ACCESSAll
WRITE ACCESSPW2 or (PW1 and WAUXB) or (WAUXBU)
MEMORY TYPENonvolatile (EE)
DS1876
80h–FFh2
BIT 7BIT 0
Accessible with the slave address A0h.
7
6
2
5
2
Applications Information
Power-Supply Decoupling
To achieve best results, it is recommended that the power
supply is decoupled with a 0.01FF or a 0.1FF capacitor.
Use high-quality, ceramic, surface-mount capacitors,
and mount the capacitors as close as possible to the
VCC and GND pins to minimize lead inductance.
SDA and SCL Pullup Resistors
SDA is an open-collector output on the DS1876 that
requires a pullup resistor to realize high logic levels. A
master using either an open-collector output with a pullup resistor or a push-pull output driver can be used for
SCL. Pullup resistor values should be chosen to ensure
that the rise and fall times listed in the I2C AC Electrical
Characteristics table are within specification.
4
2
3
2
2
2
1
2
0
2
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
PACKAGE TYPEPACKAGE CODEDOCUMENT NO.
28 TQFN-EPT2855+6
21-0140
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 69