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DS1647/DS1647P
Nonvolatile Timekeeping RAM
FEATURES
§ Integrates NV SRAM, real-time clock,
crystal, power-fail control circuit and lithium
energy source
§ Clock registers are accessed identically to the
static RAM. These registers are resident in
the eight top RAM locations
§ Totally nonvolatile with over 10 years of
operation in the absence of power
§ BCD coded year, month, date, day, hours,
minutes, and seconds with leap year
compensation valid up to 2100
§ Power-fail write protection allows for ±10%
VCC power supply tolerance
§ DS1647 only (DIP Module)
- Standard JEDEC byte-wide 128k x 8
RAM pinout
§ DS1647P only (PowerCap® Module Board)
- Surface mountable package for direct
connection to PowerCap containing
battery and crystal
- Replaceable battery (PowerCap)
- Power-fail output
- Pin-for-pin compatible with other
densities of DS164XP Timekeeping
RAM
ORDERING INFORMATION
DS1647 32-pin DIP module
*DS1647P 34-pin PowerCap Module
Board
*DS9034PCX PowerCap (Required; must
be ordered separately)
PIN ASSIGNMENT
NC
A15
A16
PFO
V
CC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
A18
A16
A14
A12
DQ0
DQ1
DQ2
GND
34-Pin PowerCap Module Board
(Uses DS9034PCX PowerCap)
1
2
3
4
A7
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
12
A0
13
14
15
16
32-Pin Encapsulated Package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
X1 GND V
16
17
BAT
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
X2
V
CC
15
17
WE
11
OE
10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
18
17
14
12
10
8
5
3
2
1
0
1 of 11 072401
DS1647/DS1647P
PIN DESCRIPTION
A0-A18 - Address Input
CE - Chip Enable
OE - Output Enable
WE - Write Enable
- +5V
V
CC
GND - Ground
DQ0-DQ7 - Data Input/Output
NC - No Connection
PFO - Power-fail Output
(DS1647P only)
X1, X2 - Crystal Connection
V
- Battery Connection
BAT
DESCRIPTION
The DS1647 is a 512k x 8 nonvolatile static RAM with a full-function real-time clock, which are both
accessible in a byte-wide format. The nonvolatile timekeeping RAM is functionally equivalent to any
JEDEC standard 512k x 8 SRAM. The device can also be easily substituted for ROM, EPROM and
EEPROM, providing read/write nonvolatility and the addition of the real-time clock function. The realtime clock information resides in the eight uppermost RAM locations. The RTC registers contain year,
month, date, day, hours, minutes, and seconds data in 24-hour BCD format. Corrections for the day of the
month and leap year are made automatically. The RTC clock registers are double-buffered to avoid access
of incorrect data that can occur during clock update cycles. The double-buffered system also prevents
time loss as the timekeeping countdown continues unabated by access to time register data. The DS1647
also contains its own power-fail circuitry, which deselects the device when the VCC supply is in an out-oftolerance condition. This feature prevents loss of data from unpredictable system operation brought on by
low VCC as errant access and update cycles are avoided.
PACKAGES
The DS1647 is available in two packages: 32-pin DIP and 34-pin PowerCap module. The 32-pin DIP
style module integrates the crystal, lithium energy source, and silicon all in one package. The 34-pin
PowerCap Module Board is designed with contacts for connection to a separate PowerCap (DS9034PCX)
that contains the crystal and battery. This design allows the PowerCap to be mounted on top of the
DS1647P after the completion of the surface mount process. Mounting the PowerCap after the surface
mount process prevents damage to the crystal and battery due to the high temperatures required for solder
reflow. The PowerCap is keyed to prevent reverse insertion. The PowerCap Module Board and PowerCap
are ordered separately and shipped in separate containers. The part number for the PowerCap is
DS9034PCX.
CLOCK OPERATIONS - READING THE CLOCK
While the double-buffered register structure reduces the chance of reading incorrect data, internal updates
to the DS1647 clock registers should be halted before clock data is read to prevent reading of data in
transition. However, halting the internal clock register updating process does not affect clock accuracy.
Updating is halted when a 1 is written into the read bit, the 7th most significant bit in the control register.
As long as 1 remains in that position, updating is halted. After a halt is issued, the registers reflect the
count, that is day, date, and time that was present at the moment the halt command was issued. However,
the internal clock registers of the double-buffered system continue to update so that clock accuracy is not
affected by the access of data. All of the DS1647 registers are updated simultaneously after the clock
status is reset. Updating is within a second after the read bit is written to 0.
2 of 11
BLOCK DIAGRAM DS1647 Figure 1
TRUTH TABLE DS1647 Table 1
V
CC
5V ± 10%
<4.5V >V
<V
BAT
BAT
CE OE WE
V
IH
X X DESELECT HIGH-Z STANDBY
X X X DESELECT HIGH-Z STANDBY
V
V
V
IL
IL
IL
XVILWRITE DATA IN ACTIVE
V
V
IL
IH
V
V
IH
IH
X X X DESELECT HIGH-Z CMOS STANDBY
X X X DESELECT HIGH-Z DATA RETENTION
DS1647/DS1647P
MODE DQ POWER
READ DATA OUT ACTIVE
READ HIGH-Z ACTIVE
MODE
SETTING THE CLOCK
The MSB Bit, B7, of the control register is the write bit. Setting the write bit to a 1, like the read bit halts
updates to the DS1647 registers. The user can then load them with the correct day, date and time data in
24-hour BCD format. Resetting the write bit to a 0 then transfers those values to the actual clock counters
and allows normal operation to resume.
STOPPING AND STARTING THE CLOCK OSCILLATOR
The clock oscillator may be stopped at any time. To increase the shelf life, the oscillator can be turned off
to minimize current drain from the battery. The OSC bit is the MSB for the second’s registers. Setting it
to a 1 stops the oscillator.
FREQUENCY TEST BIT
Bit 6 of the day byte is the frequency test bit. When the frequency test bit is set to logic 1 and the
oscillator is running, the LSB of the second’s register will toggle at 512 Hz. When the seconds register is
being read, the DQ0 line will toggle at the 512 Hz frequency as long as conditions for access remain valid
CE low, OE low, and address for seconds register remain valid and stable).
(i.e.,
3 of 11
DS1647/DS1647P
CLOCK ACCURACY (DIP MODULE)
The DS1647 is guaranteed to keep time accuracy to within ±1 minute per month at 25°C. The RTC is
calibrated at the factory by Dallas Semiconductor using nonvolatile tuning elements, and does not require
additional calibration. For this reason, methods of field clock calibration are not available and not
necessary. Clock accuracy is also effected by the electrical environment and caution should be taken to
place the RTC in the lowest level EMI section of the PCB layout. For additional information please see
application note 58.
CLOCK ACCURACY (POWERCAP MODULE)
The DS1647 and DS9034PCX are each individually tested for accuracy. Once mounted together, the
module will typically keep time accuracy to within ±1.53 minutes per month (35 ppm) at 25°C. Clock
accuracy is also effected by the electrical environment and caution should be taken to place the RTC in
the lowest level EMI section of the PCB layout. For additional information please see application
note 58.
1646 REGISTER MAP - BANK1 Table 2
ADDRESS
B
B
7
6
B
5
7FFFF - - - - - - - - YEAR 00-99
7FFFE X X X - - - - - MONTH 01-12
7FFFD X X - - - - - - DATE 01-31
7FFFC X FT X X X - - - DAY 01-07
7FFFB X X - - - - - - HOUR 00-23
7FFFA X - - - - - - - MINUTES 00-59
7FFF9
OSC
-------
7FFF8WRXXXXXXCONTROLA
DATA
B
4
B
3
B
2
B
1
B
0
FUNCTION
SECONDS 00-59
OSC = STOP BIT
R = READ BIT FT = FREQUENCY TEST
W = WRITE BIT X = UNUSED
NOTE:
All indicated “X” bits are not dedicated to any particular function and can be used as normal RAM bits.
4 of 11
DS1647/DS1647P
RETRIEVING DATA FROM RAM OR CLOCK
The DS1647 is in the read mode whenever WE (write enable) is high; CE (chip enable) is low. The
device architecture allows ripple-through access to any of the address locations in the NV SRAM. Valid
data will be available at the DQ pins within tAA after the last address input is stable, providing that the CE
and OE access times and states are satisfied. If CE or OE access times are not met, valid data will be
available at the latter of chip-enable access (t
) or at output enable access time (t
CEA
). The state of the
OEA
data input/output pins (DQ) is controlled by CE and OE . If the outputs are activated before tAA, the data
lines are driven to an intermediate state until tAA. If the address inputs are changed while CE and OE
remain valid, output data will remain valid for output data hold time (tOH) but will then go indeterminate
until the next address access.
WRITING DATA TO RAM OR CLOCK
The DS1647 is in the write mode whenever WE and CE are in their active state. The start of a write is
referenced to the latter occurring high to low transition of WE and CE . The addresses must be held valid
throughout the cycle. CE or WE must return inactive for a minimum of tWR prior to the initiation of
another read or write cycle. Data in must be valid tDS prior to the end of write and remain valid for t
afterward. In a typical application, the OE signal will be high during a write cycle. However, OE can be
active provided that care is taken with the data bus to avoid bus contention. If OE is low prior to WE
transitioning low the data bus can become active with read data defined by the address inputs. A low
transition on WE will then disable the outputs t
after WE goes active.
WEZ
DH
DATA RETENTION MODE
When VCC is within nominal limits (VCC > 4.5 volts) the DS1647 can be accessed as described above with
read or write cycles. However, when VCC is below the power-fail point VPF (point at which write
protection occurs) the internal clock registers and RAM are blocked from access. This is accomplished
internally by inhibiting access via the CE signal. At this time the power-fail output signal ( PFO ) will be
driven active low and will remain active until VCC returns to nominal levels. When VCC falls below the
level of the internal battery supply, power input is switched from the VCC pin to the internal battery and
clock activity, RAM, and clock data are maintained from the battery until VCC is returned to nominal
level.
5 of 11
DS1647/DS1647P
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground -0.3V to +7.0V
Storage Temperature -40°C to +85°C
Soldering Temperature 260°C for 10 seconds (DIP Package) (See Note 7)
See IPC/JEDEC Standard J-STD-020A for
Surface Mount Devices
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
OPERATING RANGE
Range Temperature V
Commercial 0°C to +70°C
CC
5V ± 10%
RECOMMENDED DC OPERATING CONDITIONS
(Over the Operating Range)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Supply Voltage V
Logic 1 Voltage All Inputs V
Logic 0 Voltage All Inputs V
CC
IH
IL
4.5 5.0 5.5 V 1
2.2 VCC+0.3 V
-0.3 0.8 V
DC ELECTRICAL CHARACTERISTICS (Over the Operating Range)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Average VCC Power Supply Current I
TTL Standby Current ( CE =VIH)
CMOS Standby Current
I
I
( CE =VCC-0.2V)
Input Leakage Current (any input) I
Output Leakage Current I
Output Logic 1 Voltage
(I
= -1.0 mA)
OUT
Output Logic 0 Voltage
(I
= +2.1 mA)
OUT
V
V
Write Protection Voltage V
CC1
CC2
CC3
IL
OL
OH
OL
PF
3 6 mA 2, 3
2 4.0 mA 2, 3
-1 +1
-1 +1
2.4 V
4.0 4.5 V
85 mA 2, 3
mA
mA
0.4 V
6 of 11
DS1647/DS1647P
AC ELECTRICAL CHARACTERISTICS (Over the Operating Range)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time t
Address Access Time t
CE Access Time
CE Data Off Time
Output Enable Access Time t
Output Enable Data Off Time t
Output Enable to DQ Low-Z t
CE to DQ Low-Z
Output Hold from Address t
Write Cycle Time t
Address Setup Time t
CE Pulse Width
Address Hold from End of Write t
Write Pulse Width t
WE Data Off Time
WE or CE Inactive Time
Data Setup Time t
Data Hold Time High t
RC
AA
t
CEA
t
CEZ
OEA
OEZ
OEL
t
CEL
OH
WC
AS
t
CEW
AH1
t
AH2
WEW
t
WEZ
t
WR
DS
DH1
t
DH2
120 ns
120 ns
120 ns
40 ns
100 ns
40 ns
5ns
5ns
5ns
120 ns
0ns
100 ns
5
30
ns
ns
5
6
75 ns
40 ns
10 ns
85 ns
0
25
ns
ns
5
6
AC TEST CONDITIONS
Input Levels: 0V to 3V
Transition Times: 5 ns
CAPACITANCE (t
= 25°C)
A
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Capacitance on all pins (except DQ) C
Capacitance on DQ pins C
I
DQ
7pF
10 pF
AC ELECTRICAL CHARACTERISTICS
(POWER-UP/DOWN TIMING) (Over the Operating Range)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
CE or WE at V
before Power-Down
IH
VPF (Max) to VPF (Min) VCC Fall Time t
VPF (Min) to VSO VCC Fall Time t
VSO to VPF (Min) VCC Rise Time t
VPF (Min) to VPF (Max) VCC Rise Time t
Power-Up t
Expected Data Retention Time
(Oscillator On)
t
PD
F
FB
RB
R
REC
t
DR
0
300
10
1
0
ms
ms
ms
ms
ms
15 35 ms
10 years 4
7 of 11
DS1647 READ CYCLE TIMING
DS1647 WRITE CYCLE TIMING
DS1647/DS1647P
8 of 11
POWER-DOWN/POWER-UP TIMING
DS1647/DS1647P
NOTES:
OUTPUT LOAD
1. All voltages are referenced to ground.
2. Typical values are at 25°C and nominal
supplies.
3. Outputs are open.
4. Data retention time is at 25°C and is
calculated from the date code on the device
package. The date code XXYY is the year
followed by the week of the year in which
the device was manufactured. For example,
th
9225 would mean the 25
5. t
6. t
AH1
AH2
, t
are measured from WE going high.
DH1
, t
are measured from CE going high.
DH2
week of 1992.
7. Real-Time Clock Modules (DIP) can be successfully processed through conventional wave-soldering
techniques as long as temperatures as long as temperature exposure to the lithium energy source
contained within does not exceed +85°C. Post-solder cleaning with water washing techniques is
acceptable, provided that ultrasonic vibration is not used.
In addition, for the PowerCap version:
a. Dallas Semiconductor recommends that PowerCap Module bases experience one pass through
solder reflow oriented with the label side up (“live-bug”).
b. Hand soldering and touch-up: Do not touch or apply the soldering iron to leads for more than
3 seconds. To solder, apply flux to the pad, heat the lead frame pad and apply solder. To remove
the part, apply flux, heat the lead frame pad until the solder reflows and use a solder wick to
remove solder.
9 of 11
DS1647 32-PIN PACKAGE
PKG 32-PIN
DIM MIN M AX
A IN.
MM
B IN.
MM
C IN.
MM
D IN.
MM
E IN.
MM
F IN.
MM
G IN.
MM
H IN.
MM
J IN.
MM
K IN.
MM
1.680
42.67
0.715
18.16
0.335
8.51
0.075
1.91
0.015
0.38
0.140
3.56
0.090
2.29
0.590
14.99
0.010
0.25
0.015
0.38
1.740
44.20
0.740
18.80
0.365
9.27
0.105
2.67
0.030
0.76
0.180
4.57
0.110
2.79
0.630
16.00
0.018
0.46
0.025
0.64
DS1647/DS1647P
DS1647P
PKG INCHES
DIM MIN NOM MAX
A
B
C
D
E
F
G
0.920 0.925 0.930
0.980 0.985 0.990
- - 0.080
0.052 0.055 0.058
0.048 0.050 0.052
0.015 0.020 0.025
0.025 0.027 0.030
NOTE:
For the PowerCap version:
a. Dallas Semiconductor recommends that PowerCap Module bases experience one pass through
solder reflow oriented with the label side up (“live - bug”).
b. Hand Soldering and touch-up: Do not touch or apply the soldering iron to leads for more than
3 seconds. To solder, apply flux to the pad, heat the lead frame pad and apply solder. To remove
the part, apply flux, heat the lead frame pad until the solder reflows and use a solder wick to
remove solder.
10 of 11
DS1647P WITH DS9034PCX ATTACHED
DS1647/DS1647P
PKG INCHES
DIM MIN NOM MAX
A
B
C
D
E
F
G
0.920 0.925 0.930
0.955 0.960 0.965
0.240 0.245 0.250
0.052 0.055 0.058
0.048 0.050 0.052
0.015 0.020 0.025
0.020 0.025 0.030
RECOMMENDED POWERCAP MODULE LAND PATTERN
PKG INCHES
DIM MIN NOM MAX
A
B
C
D
E
- 1.050 -
- 0.826 -
- 0.050 -
- 0.030 -
- 0.112 -
11 of 11
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