A0–A18 - Address Input
DQ0–DQ7 - Data Input/Outputs
IRQ\FT - Interrupt, Frequency-Test
Output (Open Drain)
RST- Power-On Reset Output
(Open Drain)
CE - Chip-Enable Input
CER - Chip-Enable RAM
OE - Output-Enable Input
OER - Output-Enable RAM
WE- Write Enable
V
- Power-Supply Input
CC
V
- VCC Out to RAM
CCO
GND - Ground
N.C. - No Connection
X1, X2 - Crystal Connection
V
BAT1
V
BAT2
may be simultaneously available through various sales channels. For information about device errata, click here: http://www.maxim -ic.com/errata.
1 of 18 072402
- +3V Battery Input
- +3V Battery Input
TYPICAL OPERATING CIRCUIT
DS1558
DESCRIPTION
The DS1558 is a full function, year 2000-compliant (Y2KC), real-time clock/calendar with an RTC
alarm, watchdog timer, power-on reset, battery monitor, and NV SRAM controller. User access to all
registers within the DS1558 is accomplished with a byte-wide interface as shown in Figure 1. The RTC
registers contain century, year, month, date, day, hours, minutes, and seconds data in 24-hour BCD
format. Corrections for day of month and leap year are made automatically.
The DS1558 maps the RTC registers into the SRAM address space and constantly monitors A0–A18.
When any of the upper 16 address locations are accessed, the DS1558 inhibits CER and OER to the
SRAM, and redirects reads and writes to the RTC registers within the DS1558. The DS1558 can be used
with SRAMs up to 524,272 addresses. Smaller SRAMs can be used, provided that the unused upper
address lines on the DS1558 are connected to VCC.
The RTC registers are double-buffered into an internal and external set. The user has direct access to the
external set. Clock/calendar updates to the external set of registers can be disabled and enabled to allow
the user to access static data. Assuming the internal oscillator is turned on, the internal set of registers is
continuously updated; this occurs regardless of external register settings to guarantee that accurate RTC
information is always maintained.
The DS1558 has interrupt (
The
IRQ /FT interrupt output can be used to generate an external interrupt when the RTC register values
IRQ /FT) and reset ( RST ) outputs that can be used to control CPU activity.
match user-programmed alarm values. The interrupt is always available while the device is powered from
the system supply, and it can be programmed to occur when in the battery-backed state to serve as a
system wake-up. The
IRQ /FT output can also be used as a CPU watchdog timer. CPU activity is
monitored and an interrupt or reset output are activated if the correct activity is not detected within
2 of 18
DS1558
programmed limits. The DS1558 power-on reset can be used to detect a system power-down or failure
and hold the CPU in a safe reset state until normal power returns and stabilizes; the RST output is used
for this function.
The DS1558 also contains its own power-fail circuitry, which automatically protects the data in the clock
and SRAM against out-of-tolerance V
enters an out-of-tolerance condition. When V
conditions by inhibiting the CE input when the VCC supply
CCI
goes below the level of V
CCI
, the external battery is
BAT
switched on to supply energy to the clock and the external SRAM. This feature provides a high degree of
data security during unpredictable system operation brought on by low VCC levels.
Figure 1. BLOCK DIAGRAM
Note: Any unused upper address pins must be connected to VCC to properly address the RTC.
SIGNAL DESCRIPTIONS
A0–A18 – Address inputs for address decode. The DS1558 uses the address inputs to determine whether
or not a read or write cycle should be directed to the attached SRAM or to the RTC registers.
DQ0–DQ7 – Data input/output pins for the RTC registers.
IRQ /FT – This pin is used to output the alarm interrupt or the frequency test signal. It is open drain and
requires an external pullup resistor.
3 of 18
DS1558
RST – This pin is an output used to signal that V
is out of tolerance. On power-up, RST is held low for
CC
a period of time to allow the system to stabilize. The RTC and SRAM are not accessible while RST is
active. This pin is open drain and requires an external pullup resistor.
CE – Chip-enable input that is used to access the RTC and the external SRAM.
CER – Chip-enable RAM output. CE is passed through to CER , with an added propagation delay. When
the signals on A0–A18 match an RTC address,
CER is held high, disabling the SRAM. If OE is also low,
the RTC outputs data on DQ0–DQ7.
OE – Output-enable input that is used to access the RTC and the external SRAM.
OER – Output-enable RAM output. OE is passed through to OER , with an added propagation delay.
When the signals on A0–A18 match an RTC address, CER is held high, disabling the SRAM. If CE is
also low, the RTC outputs data on DQ0–DQ7.
WE – Write-enable input that is used to write data to the RTC registers.
VCC, GND – DC power is provided to the device on these pins. VCC is the +5V input. When 5V (or 3.3V
for the 3.3V version) is applied within normal limits, the device is fully accessible and data can be written
and read. Reads and writes are inhibited when a 3V battery is connected to the device and VCC is VTP.
However, the timekeeping function continues unaffected by the lower input voltage. As VCC falls below
V
, the RAM and RTC are switched over to the external power supply (nominal 3.0V DC) at V
BAT
BAT
.
V
– VCC output to RAM. While VCC is above V
CCO
VCC is below the battery level, the SRAM is powered by one of the V
, the external SRAM is powered by VCC. When
BAT
inputs.
BAT
N.C. – No internal connection.
X1, X2 – Connections for a standard 32.768kHz quartz crystal. The internal oscillator circuitry is
designed for operation with a crystal having a specified load capacitance (C
) of 6pF. For more
L
information about crystal selection and crystal layout considerations, refer to Application Note 58
“Crystal Considerations with Dallas Real-Time Clocks.” The DS1558 can also be driven by an external
32.768kHz oscillator. In this configuration, the X1 pin is connected to the external oscillator signal and
the X2 pin is floated.
V
BAT1
, V
– Battery inputs for any standard 3V lithium cell or other energy source. Battery voltage
BAT2
must be held between 2.5V and 3.7V for proper operation. UL recognized to ensure against reverse
charging current when used with a lithium battery. If only one battery is used, it should be attached to
V
BAT1
, and V
should be grounded.
BAT2
See “Conditions of Acceptability” at http://www.maxim-ic.com/TechSupport/QA/ntrl.htm.
4 of 18
Table 1. OPERATING MODES
DS1558
V
CC
VCC > V
PF
VSO < VCC < V
VCC < VSO < V
CEOEWE
V
IH
V
IL
V
IL
V
IL
XXXHigh-ZDeselectCMOS Standby
PF
XXXHigh-ZData RetentionBattery Current
PF
XXHigh-ZDeselectStandby
XVILD
V
V
IL
IH
V
V
DQ0–DQ7MODEPOWER
WriteActive
ReadActive
IH
IH
IN
D
OUT
High-ZReadActive
DATA READ MODE
The DS1558 is in the read mode whenever CE is low and WE is high. The device architecture allows
ripple-through access to any valid address location. Valid data is available at the DQ pins within t
the last address input is stable, provided that
times are not met, valid data is available at the latter of chip-enable access (t
access time (t
). The state of the data input/output pins (DQ) is controlled by CE and OE . If the
OEA
CE and OE access times are satisfied. If CE or OE access
) or at output-enable
CEA
AA
after
outputs are activated before tAA, the data lines are driven to an intermediate state until tAA. If the address
inputs are changed while CE and OE remain valid, output data remains valid for output-data hold time
(tOH), but then goes indeterminate until the next address access.
DATA WRITE MODE
The DS1558 is in the write mode whenever WE and CE are in their active state. The start of a write is
referenced to the latter occurring transition of WE or CE . The addresses must be held valid throughout
the cycle. CE and WE must return inactive for a minimum of tWR prior to the initiation of a subsequent
read or write cycle. Data in must be valid tDS prior to the end of the write and remain valid for t
afterward. In a typical application, the OE signal is high during a write cycle. However, OE can be active
provided that care is taken with the data bus to avoid bus contention. If OE is low prior to WE
transitioning low, the data bus can become active with read data defined by the address inputs. A low
transition on WE then disables the outputs t
after WE goes active.
WEZ
DH
DATA RETENTION MODE
The 5V device is fully accessible and data can be written and read only when VCC is greater than VPF.
However, when VCC is below the power-fail point VPF (point at which write protection occurs), the
internal clock registers and SRAM are blocked from any access. When VCC falls below the battery switch
point V
operation and SRAM data are maintained from the battery until VCC is returned to nominal levels.
The 3.3V device is fully accessible and data can be written and read only when V
When VCC falls below VPF, access to the device is inhibited. If VPF is less than VSO, the device power is
switched from V
than VSO, the device power is switched from VCC to the internal backup lithium battery when VCC drops
below V
nominal levels.
All control, data, and address signals must be powered down when V
(battery supply level), device power is switched from the VCC pin to the backup battery. RTC
SO
is greater than VPF.
CC
to the internal backup lithium battery when VCC drops below VPF. If VPF is greater
CC
. RTC operation and SRAM data are maintained from the battery until VCC is returned to
SO
is powered down.
CC
5 of 18
DS1558
BATTERY LONGIVITY
The battery lifetime is dependent on the RAM battery standby current and the DS1558 internal clock
oscillator current. The total battery current is I
OSC
+ I
. When VCC is above VPF, I
CCO
current is less than
BAT
50nA. The DS1558 has an internal circuit to prevent battery charging. No external protection components
are required, and none should be used. The DS1558 has two battery pins that operate independently; the
DS1558 selects the higher of the two inputs. If only one battery is used, the battery should be attached to
V
BAT1
, and V
should be grounded.
BAT2
INTERNAL BATTERY MONITOR
The DS1558 constantly monitors the battery voltage of the internal battery. The battery-low flag (BLF)
bit of the flags register (B4 of 7FFF0h) is not writable and should always be a 0 when read. If a 1 is ever
present, both battery inputs are below 1.8V and both the contents of the RTC and RAM are questionable.
POWER-ON RESET
A temperature-compensated comparator circuit monitors the level of VCC. When VCC falls to the powerfail trip point, the
signal continues to be pulled low for a period of 40ms to 200ms. The power-on reset function is
independent of the RTC oscillator and thus is operational whether or not the oscillator is enabled.
RST signal (open drain) is pulled low. When V
returns to nominal levels, the RST
CC
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