Rainbow Electronics BU4309G-FVE-F User Manual
Low voltage·High-accuracy detection
CMOS VOLTAGE DETECTOR IC
with delay time circuit
BU42XXFVE/F/G series
BU43XXFVE/F/G series
Description
ROHM's BU42XXFVE/F/G and BU43XXFVE/F/G series are low
voltage and high-accuracy detection type of VOLTAGE DETECTOR
ICs with built-in delay time circuit adopting CMOS process.
Low voltage of 0.9V detection can be realized. Adoption of highresistance process enable to reduce current consumption and to
set delay time by small capacitor.
Features
1) Detection voltage: 0.1V step line-up 0.9~4.8V (Typ.)
2) High-accuracy detection voltage: ±1.0% (Max.)
3) Low current consumption: 0.55µA typ. (Typ.) (VDET=4.8V, VDD=6.8V)
4) Excellent detection voltage temperature characteristic: ±30ppm/˚C
5) Delay time can be set by capacitor. (100msec: CT=0.015µF)
6) Open drain output (BU42XXseries), CMOS output (BU43XXseries)
7) Various package lineup
VSOF5 : (BU42XXFVE, BU43XXFVE)
SOP4 : (BU42XXF, BU43XXF)
SSOP5 : (BU42XXG, BU43XXG)
Application
Portable appliances with microcontroller and logic circuit
Application Circuit
BU42XXFVE
BU43XXFVE
1.0±0.05
BU42XXF
BU43XXF
2.1±0.2
1.05MAX
0.32±
BU42XXG
BU43XXG
2.8±0.2
1.25MAX
0.1
0.2
1.25±
0.9
0.05±0.05
0.05
0.04
0.2
1.6±
1.1±0.05
1.6±0.05
0.6Max.
2.0±0.2
±0.05
0.1
0.05±0.05
1.6±0.05
0.5
4
1
45
321
1.2±0.05
0.22±0.05
VSOF5
1.3
3
2
0.05
0.42
SOP4
2.9±0.2
5
4
1
2 3
0.95
SSOP5
0.2Max.
0.13±0.05
0.08
+5˚
4˚
-4˚
s
0.05
±
0.04
s
0.1
0.05
0.42
±
0.04
0.1
4˚
0.27±0.15
+6˚
-4˚
s
M
0.13
0.13
5
1
2
3
1pin : VOUT
2pin : SUB
3pin : CT
4pin : VDD
5pin : GND
4
1
2
0.05
±
0.03
1pin : GND
2pin : VDD
3pin : CT
4pin : VOUT
5
1
2
3
0.2Min.
0.05
±
0.03
1pin : VOUT
2pin : VDD
3pin : GND
4pin : N.C.
5pin : CT
4
3
4
(BU42XXFVE/F/G) BU43XXFVE/F/G
Vref
VDD
VDD
GND CT
Pin
name
Package
GND
VDD
CT
VOUT
N.C.
SUB
BU42XXF
BU43XXF
SOP4
1
2
3
4
-
- -
VDD
Vout
Pin number
BU42XXFVE
BU43XXFVE
VSOF5 SSOP5
5 3
4 2
3 5
1 1
2
Reset
BU42XXG
BU43XXG
4
Vref
Pin explanation
GND
Supply voltage
Capacitor connect pin for output delay time setting
Reset output
Non connection pin
Sub straight (Connect to VDD)
VDD
VDD
GND CT
Vout
Reset
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Unit
Supply voltage
Output
voltage
CT pin input voltage
Power dissipation: VSOF5
Power dissipation: SOP4
Power dissipation: SSOP5
Operating temperature range
Storage temperature range
∗1 Derating : 2.1mW/˚C for operation above Ta=25˚C PCB (70mmx70mm, t=1.6mm) glass epoxy mounting.
∗2 Derating : 4.0mW/˚C for operation above Ta=25˚C PCB (70mmx70mm, t=1.6mm) glass epoxy mounting.
∗3 Derating : 5.4mW/˚C for operation above Ta=25˚C PCB (70mmx70mm, t=1.6mm) glass epoxy mounting.
Nch open drain output
CMOS output
VDD – GND
VOUT
VCT
∗1
Pd
2
∗
Pd
∗3
Pd
Topr
Tstg
GND – 0.3 ~ VDD + 0.3
GND – 0.3 ~ VDD + 0.3
Limits
– 0.3 ~ + 7
GND – 0.3 ~ + 7
210
400
540
– 40 ~ + 125
– 55 ~ + 125
V
V
V
mW
mW
mW
˚C
˚C
Electrical characteristics (Unless otherwise noted; Ta=
Parameter
Temperature coefficient
of detection voltage
Hysteresis voltage
Symbol Min. Max. Unit Conditions
∗4
VDET/∆T — ±30 — ppm/˚C
∆VDET
VDET × 0.03 VDET × 0.05 VDET × 0.08
VDET × 0.03 VDET × 0.05 VDET × 0.07
— 0.880.15
— 1.050.20
Circuit current ON
IDD1
— 1.230.25
— 1.400.30
— 1.580.35
— 1.750.40
— 1.40
— 1.58
Circuit current OFF
IDD2
— 1.75
— 1.93
— 2.10
—
Operating voltage range
VOPL
0.7 — —
0.9 — —
20 100 —
"L" output current (Nch)
IOL
1.0 3.3 —
4.0 7.2 —
"H" output current (Pch)
(BU43XX series only)
Output leak current
(BU42XX series only)
IOH
Ileak
CT pin
threshold voltage
∗4
CT pin output current
∗4 All shipment is not inspected for design guarantee.
Note) This product is not designed for protection against radioactive rays.
ICT
1.7 3.4 —
2.0 4.0 —
— 0 0.1
— 0 1
VDD × 0.35 VDD × 0.45
VDD × 0.40 VDD × 0.50 VDD × 0.60
9.0 10.0 11.0
5 40 —
200 400
Typ.
0.30
0.35
0.40
0.45
0.50
0.55 2.28
-
25°C ~ +125°C)
VDD × 0.55
—
V
=
>
VDET 1.1V
=
RL=470kΩ, VDD=L→H→L,
Ta=-40°C ~ +125°C
<
VDET 1.0V
VDD=VDET-0.2V, VDET=0.9~1.3V
VDET=1.4~2.1V
µA
VDET=2.2~2.7V
VDET=2.8~3.3V
VDET=3.4~4.2V
VDET=4.3~4.8V
VDD=VDET+2.0V, VDET=0.9~1.3V
VDET=1.4~2.1V
µA
VDET=2.2~2.7V
VDET=2.8~3.3V
VDET=3.4~4.2V
VDET=4.3~4.8V
<
VOL 0.4V, Ta=25°C ~ 125°C
V
µA
mA
mA
µA
VVCTH
=
<
VOL 0.4V, Ta=-25°C ~ +25°C
=
VDS=0.05V, VDD=0.85V
VDS=0.5V, VDD=1.5V, VDET=1.7V~4.8V
VDS=0.5V, VDD=2.4V, VDET=2.7V~4.8V
VDS=0.5V, VDD=4.8V, VDET=0.9V~3.9V
VDS=0.5V, VDD=6.0V, VDET=4.0V~4.8V
VDD=VDS=7V, Ta=-40°C ~ +85°C
VDD=VDS=7V, Ta=+85°C ~ +125°C
VDD=VDET×1.1, RL=470kΩ, Ta=25°C, VDET=0.9V~2.5V
VDD=VDET×1.1, RL=470kΩ, Ta=25°C, VDET=2.6V~4.8V
MΩRCTOutput delay resistance VDD=VDET×1.1, VCT=0.5V, Ta=25°C
VCT=0.1V, VDD=0.85V
µA
VCT=0.5V, VDD=1.5V, VDET=1.7V~4.8V
Timing chart and delay time setting
VDD
VDET + ∆VDET
VDET
VDD
0V
VOH
VOUT
VOL
tPLH tPLHtPHL
∗ Delay time setting (
tPLH = τ × RCT × CCT(Sec)
τ :
RCT(Ω) :
CCT(F) :
-
Reference
-
( τ × RCT) :
VDET = 0.9V ~ 2.5V
VDET = 2.6V ~ 4.8V
)
tPLH
Time constant
Designed to 10MΩ(Typ.) by resistance of the built-in IC
Capacitance of external capacitor
Capacitance of recommended CT capacitor is 100pF or more
Ta = 25°C
Ta = -25°C ~ 125°C
Ta = 25°C
Ta = -25°C ~ 125°C
(min : 5.1E6, typ. : 6.0E6, max. : 6.9E6)
(min : 3.3E6, typ. : 6.0E6, max. : 8.7E6)
(min : 5.9E6, typ. : 6.9E6, max. : 7.9E6)
(min : 3.8E6, typ. : 6.9E6, max. : 10.0E6)
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