1
Standard ICs
Quad 2-input NAND gate
BU4011B / BU4011BF / BU4011BFV
The BU4011B, BU4011BF, and BU4011BFV are dual-input positive logic NAND gates.
Four circuits are contained on a single chip. An inverter-based buffer has been added to the gate output, enabling
improved input / output propagation characteristics, and an increased load capacitance minimizes fluctuation in propagation time.
•
Features
1) Low power dissipation.
2) Wide range of operating power supply voltage.
3) High input impedance.
4) High fan-out.
5) Direct drive of 2 L-TTL inputs and 1 LS-TTL input.
•
Block diagram
A1
B1
O1
O2
B2
A2
1
2
3
4
5
6
7V
SS
14
13
12
11
10
9
8
VDD
A4
B4
O4
O3
B3
A3
•
Absolute maximum ratings (VSS = 0V, Ta = 25°C)
Parameter Limits
Power supply voltage
Power dissipation
Operating temperature
Storage temperature
Input voltage
Symbol
V
DD
Pd
Topr
Tstg
V
IN
Unit
V
mW
°C
°C
V
– 0.3 ~ + 18
– 40 ~ + 85
– 55 ~ + 150
– 0.3 ~ V
DD + 0.3
1000 (DIP), 450 (SOP)
350 (SSOP-B14)
2
Standard ICs BU4011B / BU4011BF / BU4011BFV
•
Electrical characteristics
DC characteristics (unless otherwise noted, V
SS = 0V, Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Measurement
circuit
Input high-level voltage V
IH
3.5
——
V
5
—
Fig. 17.0
——
10
11.0 —
—
15
Input low-level voltage V
IL
——
1.5
V
5
—
Fig. 1
——
3.0 10
——
4.0 15
Input high-level current I
IH
——
0.3 µ
A15V
IH = 15V Fig. 1
Input low-level current I
IL
——
– 0.3 µ
A15V
IL = 0V Fig. 1
Output high-level voltage
V
OH
4.95
—
—
V
5
I
O = 0mA Fig. 19.95
—
— 10
14.95
—
— 15
Output low-level voltage
V
OL
——
0.05
V
5
I
O = 0mA Fig. 1—
—
0.05 10
——
0.05 15
Output high-level current
I
OH
– 0.16
——
mA
5VOH = 4.6V
Fig. 1
– 0.4
——
10 V
OH = 9.5V
– 1.2
——
15 V
OH = 13.5V
Output low-level current
I
OL
0.44
——
mA
5VOL = 0.4V
Fig. 11.1
——
10 V
OL = 0.5V
3.0
——
15 V
OL = 1.5V
Static current dissipation
I
DD
——
1
µ
A
5
V
I = VDD or GND
———
210
——
415
V
DD (V)
3
Standard ICs BU4011B / BU4011BF / BU4011BFV
Switching characteristics (unless otherwise noted, Ta = 25°C, Vss = 0V, CL = 50pF)
Parameter Symbol Min. Typ. Max. Unit. Conditions
Measurement
circuit
t
TLH
—
180 360
ns
5
—
Fig. 2
—
90 180 10
—
65 130 15
t
THL
—
100 200
ns
5
—
Fig. 2
—
50 100 10
—
40 80 15
t
PLH
—
90 180
ns
5
—
Fig. 2
—
50 100 10
—
40 80 15
t
PHL
—
90 180
ns
5
—
Fig. 2
—
50 100 10
—
40 80 15
Input capacitance C
IN
—
5
—
pF
—— —
V
DD (V)
“L” to “H”
Propagation delay time
“H” to “L”
Propagation delay time
Output rise time
Output fall time
•
Measurement circuits
VDD
A
V
Fig. 1 DC characteristics
GND
VDD
CL = 50pF
P.G
20ns
Input waveform
Output waveform
90%
90%
50%
50%
10%
10%
20ns
t
PLH
tTLHtTHL
tPHL
Fig. 2 Switching characteristics
GND
4
Standard ICs BU4011B / BU4011BF / BU4011BFV
•
Electrical characteristic curve
POWER DISSIPATION : Pd (mW)
AMBIENT TEMPERATURE: Ta (°C)
1200
1000
800
600
400
200
0
0255075
100 125 150
DIP14
SOP14
SSOP - B14
Fig. 3 Power dissipation vs. Ta
•
External dimensions (Units: mm)
BU4011B
BU4011BFV
BU4011BF
DIP14
SSOP - B14
SOP14
6.5 ± 0.3
19.4 ± 0.3
0.5 ± 0.1
3.2 ± 0.2
4.25 ± 0.3
14 8
71
0.3 ± 0.1
0.51Min.
7.62
0° ~ 15°
2.54
0.4
± 0.11.27
1
14
8.7 ± 0.2
7
8
4.4 ± 0.2
6.2 ± 0.3
0.11
1.5 ± 0.1
0.15
0.15 ± 0.1
0.3Min.
0.1
0.22 ± 0.1
0.65
8
7
14
1
6.4 ± 0.3
4.4 ± 0.2
5.0 ± 0.2
1.15 ± 0.1
0.15 ± 0.1
0.3Min.
0.1
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