Rainbow Electronics BR9040RFV-W User Manual

Memory IC

BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W /

RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W

1k, 2k, 4k, bit EEPROMs for direct connection to serial ports

BR9010-W / BR9010F-W / BR9010FV-W / BR9010RFV-W / BR9010RFVM-W BR9020-W / BR9020F-W / BR9020FV-W / BR9020RFV-W / BR9020RFVM-W BR9040-W / BR9040F-W / BR9040FV-W / BR9040RFV-W / BR9040RFVM-W

The BR90XX series a re ser ial EE PROMs tha t can be con nected di r ectl y to a se rial port a nd can be e ras ed and wri tten electrically. Writing and reading is per fomed in word units, using fou r types of operation commands. Communication occurs through CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these EEPROMs to be used as on e-time ROM s. During wri ting opera tion is ch ecked vi a the intern al status ch eck.

Application

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General-Purpose

Features

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1) BR9010-W / F-W / FV-W / RFV-W / RFVM-W (1k bit) : 64 words×16bit BR9020-W / F-W / FV-W / RFV-W / RFVM-W (2k bit) : 128words×16bit BR9040-W / F-W / FV-W / RFV-W / RFVM-W (4k bit) : 256words×16bit

2) Single power supply.

3) Serial data I/O.

4) Self-timed programming cycle with auto-erase.

5) Low supply current.

Active (5V) : 2mA (max.) Standby (5V) : 3µA (max.) (CMOS INPUT)

6) Noise filter on the SK pin. Write protection when the supply is low.

7) Write pro tectio n by WC pin.

8) Space Saving DIP8/SO P8/SSOP -B8/MS OP8pin Pa ckage s.

9) 100,000 erase/ write cycles endurance.

10) Provide 1 0 years of date rete ntion.

11) Easy connection to serial port.

12) “FFFFh” stored in all address on shipped.

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Memory IC

Block diagram

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T erminal Function

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BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W /

CS

SK

DI

DO

Pin No.

BR90xx-W/RFV-W/RFVM-W

1 2 3 4 5 6 7 8

RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W

R / B

Command decode

Control

Clock generation

Command

register

BR90xxF-W/FV-W

3 4 5 6 7 8 1 2

Address

buffer

Data

register

Pin name

CS SK

DI

DO

GND

WC

R / B

CC

V

6bit 7bit 8bit

BR9010 BR9020 BR9040

16bit

Power supply

voltage detector

R / W

High voltage

generator

6bit

BR9010

7bit

BR9020

8bit

BR9040

16bit

1,024bit 2,048bit 4,096bit

EEPROM

array

Write disable

Address decoder

amplifier

Function

Chip Select Input Serial Date Clock Input

Serial Date Input (Op code, address) Serial Date Output Ground (0V) Write Control Input READY/ BUSY Status Output Power Supply

WC

BR9010 BR9020 BR9040

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Memory IC

Absolute Maximum Ratings

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BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W /

RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W

(Ta=25°C)

Parameter

Symbol

Supply Voltage

BR9010-W, BR9020-W, BR9040-W

BR9010F-W, BR9020F-W,

Power dissipation

BR9040F-W BR9010FV-W, BR9010RFV-W,

BR9020FV-W, BR9020RFV-W, BR9040FV-W, BR9040RFV-W

BR9010RFVM-W, BR9020RFVM-W, BR9040RFVM-W

Storage Temperature Operating Temperature Terminal Voltage

∗1 Degradation is done at 8.0mW/˚C for operation above Ta=25˚C ∗2 Degradation is done at 4.5mW/˚C for operation above Ta=25˚C ∗3 Degradation is done at 3.0mW/˚C for operation above Ta=25˚C ∗4 Degradation is done at 3.1mW/˚C for operation above Ta=25˚C

CC

V

Pd

Tstg Topr

−

DIP8

SOP8

SSOP-B8

MSOP8

−0.3∼V

Limits

−0.3∼+7.0

−65∼+125

−40∼+85

CC

+0.3

800

450

300

310

Unit

V

1

∗

2

∗

mW

3

∗

4

∗

°C °C

V

Recommended Operating Condition

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Parameter Symbol Min. Typ. Max. Unit

Supply voltage

Input voltage

Write Read

CC

V

IN

(Ta=25°C)

2.7

2.0 0

− 5.5 V

− V

CC

V

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Memory IC

Electrical Characteristics

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BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W /

RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W

Unless otherwise specified ( T a=−40~+85°C, V

Parameter Input LOW Voltage 1 Input HIGH Voltage 1 Input LOW Voltage 2 Input HIGH Voltage 2 Output LOW Voltage Output HIGH Voltage Input Leakage Current Output Leakage Current

Operating Current

Standby Current Clock Frequency

Symbol

V

IL1

V

IH1

V

IL2

V

IH2

V

OL

V

OH

I

LI

I

LO

I

CC1

I

CC2

I

SB

f

SK

Min. Typ. Max. Unit Conditions

−

CC

0.7×V

−

CC

0.8×V 0

CC

−0.4

V

−1

−

Unless otherwise specified ( T a=−40~+85°C, V

Parameter

Input LOW Voltage 1 Input HIGH Voltage 1 Input LOW Voltage 2 Input HIGH Voltage 2 Output LOW Voltage Output HIGH Voltage Input Leakage Current Output Leakage Current

Operating Current

Standby Current Clock Frequency

Symbol

V

IL1

V

IH1

V

IL2

V

IH2

V

OL

V

OH

I

LI

I

LO

I

CC1

I

CC2

I

SB

f

SK

Min. Typ. Max. Unit Conditions

−

0.7×V

CC

−

0.8×V

CC

0

V

CC

−0.4

−1

−

CC

=

2.7V~5.5V)

−

CC

=

2.7V~3.3V)

−

0.3×V

−

0.2×V

−

0.4

V

1 1 2 1 3 2

0.3×V

−

0.2×V

−

0.4

V

1 1

1.5

0.5 2 2

DI pin

V

CC

DI pin

V

CS, SK, WC pin

V

CC

CS, SK, WC pin

V V

OL

=2.1mA

I

CC

V

OH

=−0.4mA

I

IN

=0V∼V

V

µA

V

µA

SK

f

mA

f

mA

SK

CS, SK, DI, WC=VCC, DO, R / B=OPEN

µA

MHz

DI pin

V

CC

DI pin

V

CS, SK, WC pin

V

CC

CS, SK, WC pin

V V

OL

I

V

I

OH

V

µA µA

V f

mA mA

SK

f

SK

CS, SK, DI, WC=VCC, DO, R / B=OPEN

µA

MHz

CC

OUT

=0V∼VCC, CS=V

CC

=2MHz, tE / W=10ms (WRITE) =2MHz (READ)

−

=100µA =−100µA

IN

=0V∼V

CC

OUT

=0V∼VCC, CS=V

CC

=2MHz, tE / W=10ms (WRITE) =2MHz (READ)

−

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Memory IC

AC Oper ation Char act erist ics

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( Ta=−40~+85°C, V

BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W /

RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W

CC

=

2.7~5.5V)

Parameter Symbol Min. Typ. Max. Unit

Chip Select Setup Time Chip Select Hold Time Data In Setup Time Data In Hold Time Delay to Output High Delay to Output Low Self-Timed Program Cycle Minimum Chip Select High Time Data Output Disable Time( From

CS) Clock High Time Clock Low Time Write Control Setup Time Write Control Hold Time Clock High to Output READY/BUSY Status

t t

CSS

CSH

DIS

DIH

PD1

PD0

E / W

CS

OH

WH

WL

WCS

WCH

SV

100 100 100 100

−−

250

230 230

0

0 0

−−

−

−−

ns ns nst

nst 150 nst 150 nst

10 mst

nst 150 nst

nst

ns

ns 150 nst

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