Rainbow Electronics AT45DB321D User Manual

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Features

•

Single 2.7V - 3.6V Supply

•

RapidS™ Serial Interface: 66 MHz Maximum Clock Frequency

– SPI Compatible Modes 0 and 3

•

User Configurable Page Size

– 512 Bytes per Page – 528 Bytes per Page – Page Size Can Be Factory Pre-configured for 512 Bytes

•

Page Program Operation

– Intelligent Programming Operation – 8,192 Pages (512/528 Bytes/Page) Main Memory

•

Flexible Erase Options

– Page Erase (512 Bytes) – Block Erase (4 Kbytes) – Sector Erase (64 Kbytes) – Chip Erase (32 Mbits)

•

Two SRAM Data Buffers (512/528 Bytes)

– Allows Receiving of Data while Reprogramming the Flash Array

•

Continuous Read Capability through Entire Array

– Ideal for Code Shadowing Applications

•

Low-power Dissipation

– 7 mA Active Read Current Typical – 25 µA Standby Current Typical – 5 µA Deep Power Down Typical

•

Hardware and Software Data Protection Features

– Individual Sector

•

Sector Lockdown for Secure Code and Data Storage

– Individual Sector

•

Security: 128-byte Security Register

– 64-byte User Programmable Space – Unique 64-byte Device Identifier

•

JEDEC Standard Manufacturer and Device ID Read

•

100,000 Program/Erase Cycles Per Page Minimum

•

Data Retention – 20 Years

•

Industrial Temperature Range

•

Green (Pb/Halide-free/RoHS Compliant) Packaging Options

32-megabit

2.7-volt DataFlash

AT45DB321D

1. Description

The AT45DB321D is a 2.7-volt, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB321D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66 MHz. Its 34,603,008 bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB321D also contains two SRAM buffers of 512/528 bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a RapidS serial interface to

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sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential.

To allow for simple in-system reprogrammability, the AT45DB321D does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB321D is enabled through the chip select pin (CS

) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output

(SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.

2. Pin Configurations and Pinouts

(1)

(VDFN) Top View

SO GND VCC WP

Figure 2-1. MLF

SCK

RESET

Note: 1. The metal pad on the bottom of the MLF

package is floating. This pad can be a “No Connect” or connected to GND.

Figure 2-3. DataFlash Card

(1)

Top View through Package

7654321

Note: 1. See AT45DCB004D Datasheet.

Figure 2-2. SOIC Top View

2 3 4

SCK

RESET

Figure 2-4. TSOP Top View: Type 1

NC NC

NC NC NC CS

1 2 3 4 5 6 7 8 9 10 11 12 13

RDY/BUSY

RESET

VCC

GND

SCK

GND

VCC

Note: TSOP package is not recommended for new designs. Future die

shrinks will support 8-pin packages only.

AT45DB321D

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Table 2-1. Pin Configurations

Symbol Name and Function

Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device

will be deselected and normally be placed in the standby mode (not Deep Power-Down mode), and the output pin (SO) will be in a high-impedance state. When the device is deselected, data

SCK

RESET

RDY/BUSY

GND

will not be accepted on the input pin (SI). A high-to-low transition on the CS

transition is required to end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device will not enter the standby mode until the completion of the operation.

Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of data to and from the device. Command, address, and input data present on the SI pin is always latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the falling edge of SCK.

Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input including command and address sequences. Data on the SI pin is always latched on the rising edge of SCK.

Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on the falling edge of SCK.

Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector Protection Register will be protected against program and erase operations regardless of whether the Enable Sector Protection command has been issued or not. The WP independently of the software controlled protection method. After the WP pin goes low, the content of the Sector Protection Register cannot be modified.

If a program or erase command is issued to the device while the WP will simply ignore the command and perform no operation. The device will return to the idle state once the CS Lockdown command, however, will be recognized by the device when the WP pin is asserted.

The WP not be used. However, it is recommended that the WP pin also be externally connected to VCC whenever possible.

Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET brought back to a high level.

The device incorporates an internal power-on reset circuit, so there are no restrictions on the RESET that the RESET pin be driven high externally.

Ready/Busy: This open drain output pin will be driven low when the device is busy in an internally self-timed operation. This pin, which is normally in a high state (through an external pull-up resistor), will be pulled low during programming/erase operations, compare operations, and page-to-buffer transfers.

The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed.

Device Power Supply: The VCC pin is used to supply the source voltage to the device. Operations at invalid VCC voltages may produce spurious results and should not be attempted.

Ground: The ground reference for the power supply. GND should be connected to the system ground.

pin has been deasserted. The Enable Sector Protection command and Sector

pin is internally pulled-high and may be left floating if hardware controlled protection will

pin during power-on sequences. If this pin and feature are not utilized it is recommended

pin is required to start an operation, and a low-to-high

pin functions

pin is asserted, the device

pin. Normal operation can resume once the RESET pin is

AT45DB321D

Asserted

State Type

Low Input

– Input

– Output

Low Input

– Output

–Power

– Ground

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3. Block Diagram

FLASH MEMORY ARRAY

PAGE (512/528 BYTES)

BUFFER 2 (512/528 BYTES)BUFFER 1 (512/528 BYTES)

SCK

I/O INTERFACE

RESET

VCC

GND

RDY/BUSY

SOSI

4. Memory Array

To provide optimal flexibility, the memory array of the AT45DB321D is divided into three levels of granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illustrates the breakdown of each level and details the number of pages per sector and block. All program operations to the DataFlash occur on a page by page basis. The erase operations can be performed at the chip, sector, block or page level.

Figure 4-1. Memory Architecture Diagram

SECTOR ARCHITECTURE BLOCK ARCHITECTURE PAGE ARCHITECTURE

SECTOR 0a = 8 Pages

4,096/4,224 bytes

SECTOR 0b = 120 Pages

61,440/63,360 bytes

SECTOR 1 = 128 Pages

65,536/67,584 bytes

SECTOR 2 = 128 Pages

65,536/67,584 bytes

SECTOR 62 = 128 Pages

65,536/67,584 bytes

SECTOR 63 = 128 Pages

65,536/67,586 bytes

SECTOR 0a

SECTOR 0b

SECTOR 1

BLOCK 126

BLOCK 127

BLOCK 128

BLOCK 129

BLOCK 1,022

BLOCK 1,023

Block = 4,096/4,224 bytes

BLOCK 0

BLOCK 1

BLOCK 2

BLOCK 62

BLOCK 63

BLOCK 64

BLOCK 65

8 Pages

BLOCK 0

BLOCK 1

PAG E 0

PAG E 1

PAG E 6

PAG E 7

PAG E 8

PAG E 9

PAGE 14

PAGE 15

PAGE 16

PAGE 17

PAG E 1 8

PAGE 8,190

PAGE 8,191

Page = 512/528 bytes

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5. Device Operation

The device operation is controlled by instructions from the host processor. The list of instructions and their associated opcodes are contained in Table 15-1 on page 28 through Table 15-7 on

page 31. A valid instruction starts with the falling edge of CS

opcode and the desired buffer or main memory address location. While the CS gling the SCK pin controls the loading of the opcode and the desired buffer or main memory address location through the SI (serial input) pin. All instructions, addresses, and data are transferred with the most significant bit (MSB) first.

Buffer addressing for the DataFlash standard page size (528 bytes) is referenced in the datasheet using the terminology BFA9 - BFA0 to denote the 10 address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology PA12 - PA0 and BA9 - BA0, where PA12 - PA0 denotes the 13 address bits required to designate a page address and BA9 - BA0 denotes the 10 address bits required to designate a byte address within the page.

For “Power of 2” binary page size (512 bytes) the Buffer addressing is referenced in the datasheet using the conventional terminology BFA8 - BFA0 to denote the 9 address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology A21 - A0, where A21 - A9 denotes the 13 address bits required to designate a page address and A8 - A0 denotes the 9 address bits required to designate a byte address within a page.

AT45DB321D

followed by the appropriate 8-bit

pin is low, tog-

6. Read Commands

By specifying the appropriate opcode, data can be read from the main memory or from either one of the two SRAM data buffers. The DataFlash supports RapidS protocols for Mode 0 and Mode 3. Please refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for details on the clock cycle sequences for each mode.

6.1 Continuous Array Read (Legacy Command: E8H): Up to 66 MHz

By supplying an initial starting address for the main memory array, the Continuous Array Read command can be utilized to sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing information or control signals need to be provided. The DataFlash incorporates an internal address counter that will automatically increment on every clock cycle, allowing one continuous read operation without the need of additional address sequences. To perform a continuous read from the DataFlash standard page size (528 bytes), an opcode of E8H must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and 4 don’t care bytes. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To perform a continuous read from the binary page size (512 bytes), the opcode (E8H) must be clocked into the device followed by three address bytes and 4 don’t care bytes. The first 13 bits (A21 - A9) of the 22-bits sequence specify which page of the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bits address sequence specify the starting byte address within the page. The don’t care bytes that follow the address bytes are needed to initialize the read operation. Following the don’t care bytes, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.

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The CS bytes, and the reading of data. When the end of a page in main memory is reached during a

pin must remain low during the loading of the opcode, the address bytes, the don’t care

Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array.

A low-to-high transition on the CS

pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by the f

specification. The Continuous Array Read bypasses both data buffers and leaves the

CAR1

contents of the buffers unchanged.

6.2 Continuous Array Read (High Frequency Mode: 0BH): Up to 66 MHz

This command can be used with the serial interface to read the main memory array sequentially in high speed mode for any clock frequency up to the maximum specified by f continuous read array with the page size set to 528 bytes, the CS opcode 0BH must be clocked into the device followed by three address bytes and a dummy byte. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To perform a continuous read with the page size set to 512 bytes, the opcode, 0BH, must be clocked into the device followed by three address bytes (A21 - A0) and a dummy byte. Following the dummy byte, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.

The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by the f

specification. The Continuous Array Read bypasses both

CAR1

data buffers and leaves the contents of the buffers unchanged.

must first be asserted then an

. To perform a

CAR1

6.3 Continuous Array Read (Low Frequency Mode: 03H): Up to 33 MHz

This command can be used with the serial interface to read the main memory array sequentially without a dummy byte up to maximum frequencies specified by f read array with the page size set to 528 bytes, the CS

must first be asserted then an opcode, 03H, must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence). The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To perform a continuous read with the page size set to 512 bytes, the opcode, 03H, must be clocked into the device followed by three address bytes (A21 - A0). Following the address bytes, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.

AT45DB321D

CAR2

. To perform a continuous

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during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.

6.4 Main Memory Page Read

A main memory page read allows the user to read data directly from any one of the 8,192 pages in the main memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. To start a page read from the DataFlash standard page size (528 bytes), an opcode of D2H must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and 4 don’t care bytes. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify the page in main memory to be read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within that page. To start a page read from the binary page size (512 bytes), the opcode D2H must be clocked into the device followed by three address bytes and 4 don’t care bytes. The first 13 bits (A21 - A9) of the 22-bits sequence specify which page of the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bits address sequence specify the starting byte address within the page. The don’t care bytes that follow the address bytes are sent to initialize the read operation. Following the don’t care bytes, additional pulses on SCK result in data being output on the SO (serial output) pin. The CS address bytes, the don’t care bytes, and the reading of data. When the end of a page in main memory is reached, the device will continue reading back at the beginning of the same page. A low-to-high transition on the CS output pin (SO). The maximum SCK frequency allowable for the Main Memory Page Read is defined by the f leaves the contents of the buffers unchanged.

AT45DB321D

pin must remain low during the loading of the opcode, the

pin will terminate the read operation and tri-state the

specification. The Main Memory Page Read bypasses both data buffers and

SCK

6.5 Buffer Read

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The SRAM data buffers can be accessed independently from the main memory array, and utilizing the Buffer Read Command allows data to be sequentially read directly from the buffers. Four opcodes, D4H or D1H for buffer 1 and D6H or D3H for buffer 2 can be used for the Buffer Read Command. The use of each opcode depends on the maximum SCK frequency that will be used to read data from the buffer. The D4H and D6H opcode can be used at any SCK frequency up to the maximum specified by f read operations up to the maximum specified by f

To perform a buffer read from the DataFlash standard buffer (528 bytes), the opcode must be clocked into the device followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0). To perform a buffer read from the binary buffer (512 bytes), the opcode must be clocked into the device followed by three address bytes comprised of 15 don’t care bits and 9 buffer address bits (BFA8 - BFA0). Following the address bytes, one don’t care byte must be clocked in to initialize the read operation. The CS remain low during the loading of the opcode, the address bytes, the don’t care byte, and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning of the buffer. A low-to-high transition on the CS and tri-state the output pin (SO).

. The D1H and D3H opcode can be used for lower frequency

CAR1

CAR2

pin will terminate the read operation

pin must

7. Program and Erase Commands

7.1 Buffer Write

Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the DataFlash standard buffer (528 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0). The 10 buffer address bits specify the first byte in the buffer to be written. To load data into the binary buffers (512 bytes each), a 1-byte opcode 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 15 don’t care bits and 9 buffer address bits (BFA8 - BFA0). The 9 buffer address bits specify the first byte in the buffer to be written. After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is reached, the device will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high transition is detected on the CS

7.2 Buffer to Main Memory Page Program with Built-in Erase

Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the DataFlash standard page size (528 bytes), the opcode must be followed by three address bytes consist of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written and 10 don’t care bits. To perform a buffer to main memory page program with built-in erase for the binary page size (512 bytes), the opcode 83H for buffer 1 or 86H for buffer 2, must be clocked into the device followed by three address bytes consisting of 2 don’t care bits 13-page address bits (A21 - A9) that specify the page in the main memory to be written and 9 don’t care bits. When a low-to-high transition occurs on the CS selected page in main memory (the erased state is a logic 1) and then program the data stored in the buffer into the specified page in main memory. Both the erase and the programming of the page are internally self-timed and should take place in a maximum time of t the status register and the RDY/BUSY

pin will indicate that the part is busy.

pin.

pin, the part will first erase the

. During this time,

7.3 Buffer to Main Memory Page Program without Built-in Erase

A previously-erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2. A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into the device. For the DataFlash standard page size (528 bytes), the opcode must be followed by three address bytes consist of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written and 10 don’t care bits. To perform a buffer to main memory page program without built-in erase for the binary page size (512 bytes), the opcode 88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written and 9 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that is being programmed has been previously erased using one of the erase commands (Page Erase or Block Erase). The programming of the page is internally self-timed and should take place in a maximum time of t status register and the RDY/BUSY

AT45DB321D

pin will indicate that the part is busy.

. During this time, the

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7.4 Page Erase

7.5 Block Erase

AT45DB321D

The Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the DataFlash standard page size (528 bytes), an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be erased and 10 don’t care bits. To perform a page erase in the binary page size (512 bytes), the opcode 81H must be loaded into the device, followed by three address bytes consist of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be erased and 9 don’t care bits. When a low-to-high transition occurs on the CS state is a logical 1). The erase operation is internally self-timed and should take place in a maximum time of t

. During this time, the status register and the RDY/BUSY pin will indicate that the

part is busy.

A block of eight pages can be erased at one time. This command is useful when large amounts of data has to be written into the device. This will avoid using multiple Page Erase Commands. To perform a block erase for the DataFlash standard page size (528 bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 10 page address bits (PA12 -PA3) and 13 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (512 bytes), the opcode 50H must be loaded into the device, followed by three address bytes consisting of 2 don’t care bits, 10 page address bits (A21 - A12) and 12 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs on the CS pages. The erase operation is internally self-timed and should take place in a maximum time of t

. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.

pin, the part will erase the selected page (the erased

pin, the part will erase the selected block of eight

Table 7-1. Block Erase Addressing

PA1 2/

A21

3597J–DFLASH–4/08

PA1 1/

A20

0000000000XXX 0

0000000001XXX 1

0000000010XXX 2

0000000011XXX 3

•

1111111100XXX1020

1111111101XXX1021

1111111110XXX1022

1111111111XXX1023

PA10/

A19

•

PA9 /

A18

•

PA8 /

A17

•

PA 7/

A16

•

PA6 /

A15

•

PA5 /

A14

•

PA4 /

A13

•

PA3 /

A12

•

PA2 /

A11

•

PA1 /

A10

•

PA0 /

A9 Block

•

7.6 Sector Erase

The Sector Erase command can be used to individually erase any sector in the main memory. There are 64 sectors and only one sector can be erased at one time. To perform sector 0a or sector 0b erase for the DataFlash standard page size (528 bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 10 page address bits (PA12 - PA3) and 13 don’t care bits. To perform a sector 1-63 erase, the opcode 7CH must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 4 page address bits (PA12 - PA9) and 19 don’t care bits. To perform sector 0a or sector 0b erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of 2 don’t care bit and 10 page address bits (A21 - A12) and 12 don’t care bits. To perform a sector 1-63 erase, the opcode 7CH must be loaded into the device, followed by three address bytes comprised of 2 don’t care bits and 4 page address bits (A21 - A18) and 18 don’t care bits. The page address bits are used to specify any valid address location within the sector which is to be erased. When a low-to-high transition occurs on the CS internally self-timed and should take place in a maximum time of t register and the RDY/BUSY

Table 7-2. Sector Erase Addressing

pin, the part will erase the selected sector. The erase operation is

. During this time, the status

pin will indicate that the part is busy.

PA12/

A21

7.7 Chip Erase

PA11/

A20

0000000000XXX 0a

0000000001XXX 0b

000001XXXXXXX 1

000010XXXXXXX 2

•

111100XXXXXXX 60

111101XXXXXXX 61

111110XXXXXXX 62

111111XXXXXXX 63

PA1 0/

A19

•

PA9 /

A18

•

(1)

PA 8/

A17

•

PA7 /

A16

•

PA6 /

A15

•

PA5 /

A14

•

PA4 /

A13

•

PA 3/

A12

•

PA2 /

A11

•

PA1 /

A10

•

PA0 /

A9 Sector

•

The entire main memory can be erased at one time by using the Chip Erase command.

To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. After the last bit of the opcode sequence has been clocked in, the CS

pin can be deasserted to start the erase process. The erase operation is internally self-timed and should take place in a time of t

. During this time, the Status Register will indicate that the device is busy.

The Chip Erase command will not affect sectors that are protected or locked down; the contents of those sectors will remain unchanged. Only those sectors that are not protected or locked down will be erased.

•

Note: 1. Refer to the errata regarding Chip Erase on page 53.

AT45DB321D

3597J–DFLASH–4/08

AT45DB321D

The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle completes.

Command Byte 1 Byte 2 Byte 3 Byte 4

Chip Erase C7H 94H 80H 9AH

Figure 7-1. Chip Erase

Each transition represents 8 bits

Note: 1. Refer to the errata regarding Chip Erase on page 53.

Opcode

Byte 1

7.8 Main Memory Page Program Through Buffer

This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program with Built-in Erase operations. Data is first clocked into buffer 1 or buffer 2 from the input pin (SI) and then programmed into a specified page in the main memory. To perform a main memory page program through buffer for the DataFlash standard page size (528 bytes), a 1-byte opcode, 82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, followed by three address bytes. The address bytes are comprised of 1 don’t care bit, 13 page address bits, (PA12 - PA0) that select the page in the main memory where data is to be written, and 10 buffer address bits (BFA9 - BFA0) that select the first byte in the buffer to be written. To perform a main memory page program through buffer for the binary page size (512 bytes), the opcode 82H for buffer 1 or 85H for buffer 2, must be clocked into the device followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written, and 9 buffer address bits (BFA8 - BFA0) that selects the first byte in the buffer to be written. After all address bytes are clocked in, the part will take data from the input pins and store it in the specified data buffer. If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS pin, the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into that memory page. Both the erase and the programming of the page are internally self-timed and should take place in a maximum time of t the status register and the RDY/BUSY

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

pin will indicate that the part is busy.

. During this time,

8. Sector Protection

Two protection methods, hardware and software controlled, are provided for protection against inadvertent or erroneous program and erase cycles. The software controlled method relies on the use of software commands to enable and disable sector protection while the hardware controlled method employs the use of the Write Protect (WP that are to be protected or unprotected against program and erase operations is specified in the nonvolatile Sector Protection Register. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be determined by checking the Status Register.

3597J–DFLASH–4/08

) pin. The selection of which sectors

8.1 Software Sector Protection

8.1.1 Enable Sector Protection Command

Sectors specified for protection in the Sector Protection Register can be protected from program and erase operations by issuing the Enable Sector Protection command. To enable the sector protection using the software controlled method, the CS with any other command. Once the CS sequence must be clocked in via the input pin (SI). After the last bit of the command sequence has been clocked in, the CS enabled.

Command Byte 1 Byte 2 Byte 3 Byte 4

Enable Sector Protection 3DH 2AH 7FH A9H

Figure 8-1. Enable Sector Protection

pin must first be asserted as it would be

pin has been asserted, the appropriate 4-byte command

pin must be deasserted after which the sector protection will be

8.1.2 Disable Sector Protection Command

To disable the sector protection using the software controlled method, the CS asserted as it would be with any other command. Once the CS appropriate 4-byte sequence for the Disable Sector Protection command must be clocked in via the input pin (SI). After the last bit of the command sequence has been clocked in, the CS must be deasserted after which the sector protection will be disabled. The WP deasserted state; otherwise, the Disable Sector Protection command will be ignored.

Command Byte 1 Byte 2 Byte 3 Byte 4

Disable Sector Protection 3DH 2AH 7FH 9AH

Figure 8-2. Disable Sector Protection

Opcode

Byte 1

Each transition represents 8 bits

Opcode

Byte 1

Each transition represents 8 bits

Opcode

Byte 2

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 3

Opcode

Byte 4

pin must first be

pin has been asserted, the

pin must be in the

Opcode

Byte 4

8.1.3 Various Aspects About Software Controlled Protection

Software controlled protection is useful in applications in which the WP controlled by a host processor. In such instances, the WP internally pulled high) and sector protection can be controlled using the Enable Sector Protection and Disable Sector Protection commands.

If the device is power cycled, then the software controlled protection will be disabled. Once the device is powered up, the Enable Sector Protection command should be reissued if sector pro-

tection is desired and if the WP

AT45DB321D

pin is not used.

pin is not or cannot be

pin may be left floating (the WP pin is

3597J–DFLASH–4/08

9. Hardware Controlled Protection

Sectors specified for protection in the Sector Protection Register and the Sector Protection Register itself can be protected from program and erase operations by asserting the WP keeping the pin in its asserted state. The Sector Protection Register and any sector specified for protection cannot be erased or reprogrammed as long as the WP modify the Sector Protection Register, the WP nently connected to GND, then the content of the Sector Protection Register cannot be changed. If the WP Protection Register can be modified.

pin is deasserted, or permanently connected to VCC, then the content of the Sector

AT45DB321D

pin and

pin is asserted. In order to

pin must be deasserted. If the WP pin is perma-

The WP

pin will override the software controlled protection method but only for protecting the sectors. For example, if the sectors were not previously protected by the Enable Sector Protection command, then simply asserting the WP maximum specified t

time. When the WP pin is deasserted; however, the sector protection

WPE

would no longer be enabled (after the maximum specified t tor Protection command was not issued while the WP Protection command was issued before or while the WP ing the WP

pin would not disable the sector protection. In this case, the Disable Sector

Protection command would need to be issued while the WP

pin would enable the sector protection within the

time) as long as the Enable Sec-

WPD

pin was asserted. If the Enable Sector

pin was asserted, then simply deassert-

pin is deasserted to disable the sector protection. The Disable Sector Protection command is also ignored whenever the WP asserted.

A noise filter is incorporated to help protect against spurious noise that may inadvertently assert or deassert the WP

pin.

The table below details the sector protection status for various scenarios of the WP Enable Sector Protection command, and the Disable Sector Protection command.

Figure 9-1. WP

Pin and Protection Status

Table 9-1. WP Pin and Protection Status

Time

Period WP Pin

1High

2 Low X X Enabled Read Only

3High

Enable Sector Protection

Command

Command Not Issued Previously

–

Issue Command

Command Issued During Period 1

or 2

–

Issue Command

Disable Sector

Protection Command

Issue Command

–

Not Issued Yet

Issue Command

–

Sector Protection

Status

Disabled Disabled

Enabled

Disabled

Enabled

pin is

pin, the

Sector

Protection

Read/Write Read/Write Read/Write

3597J–DFLASH–4/08

9.1 Sector Protection Register

The nonvolatile Sector Protection Register specifies which sectors are to be protected or unprotected with either the software or hardware controlled protection methods. The Sector Protection Register contains 64 bytes of data, of which byte locations 0 through 63 contain values that specify whether sectors 0 through 63 will be protected or unprotected. The Sector Protection Register is user modifiable and must first be erased before it can be reprogrammed. Table 9-3 illustrates the format of the Sector Protection Register.:

Table 9-2. Sector Protection Register

Sector Number 0 (0a, 0b) 1 to 63

Protected

Unprotected 00H

Table 9-3. Sector 0 (0a, 0b)

Sectors 0a, 0b Unprotected 00 00 xx xx 0xH

Protect Sector 0a (Pages 0-7) 11 00 xx xx CxH

Protect Sector 0b (Pages 8-127) 00 11 xx xx 3xH

See Table 9-3

0a 0b

(Pages 0-7) (Pages 8-127)

Bit 7, 6 Bit 5, 4 Bit 1, 0

Bit 3, 2

FFH

Data

Val ue

Protect Sectors 0a (Pages 0-7), 0b (Pages 8-127)

Note: 1. The default value for bytes 0 through 63 when shipped from Atmel is 00H.

(1)

x = don’t care.

11 11 xx xx FxH

AT45DB321D

3597J–DFLASH–4/08

9.1.1 Erase Sector Protection Register Command

In order to modify and change the values of the Sector Protection Register, it must first be erased using the Erase Sector Protection Register command.

AT45DB321D

To erase the Sector Protection Register, the CS any other command. Once the CS

pin has been asserted, the appropriate 4-byte opcode

pin must first be asserted as it would be with

sequence must be clocked into the device via the SI pin. The 4-byte opcode sequence must start with 3DH and be followed by 2AH, 7FH, and CFH. After the last bit of the opcode sequence has been clocked in, the CS cycle. The erasing of the Sector Protection Register should take place in a time of t

pin must be deasserted to initiate the internally self-timed erase

, during

which time the Status Register will indicate that the device is busy. If the device is powereddown before the completion of the erase cycle, then the contents of the Sector Protection Register cannot be guaranteed.

The Sector Protection Register can be erased with the sector protection enabled or disabled. Since the erased state (FFH) of each byte in the Sector Protection Register is used to indicate that a sector is specified for protection, leaving the sector protection enabled during the erasing of the register allows the protection scheme to be more effective in the prevention of accidental programming or erasing of the device. If for some reason an erroneous program or erase command is sent to the device immediately after erasing the Sector Protection Register and before the register can be reprogrammed, then the erroneous program or erase command will not be processed because all sectors would be protected.

Command Byte 1 Byte 2 Byte 3 Byte 4

Erase Sector Protection Register 3DH 2AH 7FH CFH

Figure 9-2. Erase Sector Protection Register

Each transition represents 8 bits

Opcode

Byte 1

9.1.2 Program Sector Protection Register Command

Once the Sector Protection Register has been erased, it can be reprogrammed using the Program Sector Protection Register command.

To program the Sector Protection Register, the CS ate 4-byte opcode sequence must be clocked into the device via the SI pin. The 4-byte opcode sequence must start with 3DH and be followed by 2AH, 7FH, and FCH. After the last bit of the opcode sequence has been clocked into the device, the data for the contents of the Sector Protection Register must be clocked in. As described in Section 9.1, the Sector Protection Register contains 64 bytes of data, so 64 bytes must be clocked into the device. The first byte of data corresponds to sector 0, the second byte corresponds to sector 1, and so on with the last byte of data corresponding to sector 63.

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

pin must first be asserted and the appropri-

3597J–DFLASH–4/08

After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle. The programming of the Sector Protection Register should take place in a time of t

, during which time the Status Register will indicate that the device is busy. If

the device is powered-down during the program cycle, then the contents of the Sector Protection Register cannot be guaranteed.

If the proper number of data bytes is not clocked in before the CS

pin is deasserted, then the protection status of the sectors corresponding to the bytes not clocked in can not be guaranteed. For example, if only the first two bytes are clocked in instead of the complete 62 bytes, then the protection status of the last 62 sectors cannot be guaranteed. Furthermore, if more than 64 bytes of data is clocked into the device, then the data will wrap back around to the beginning of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at byte location 0 of the Sector Protection Register.

If a value other than 00H or FFH is clocked into a byte location of the Sector Protection Register, then the protection status of the sector corresponding to that byte location cannot be guaranteed. For example, if a value of 17H is clocked into byte location 2 of the Sector Protection Register, then the protection status of sector 2 cannot be guaranteed.

The Sector Protection Register can be reprogrammed while the sector protection enabled or disabled. Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than disabling sector protection completely.

The Program Sector Protection Register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of the buffer 1 will be altered from its previous state when this command is issued.

Command Byte 1 Byte 2 Byte 3 Byte 4

Program Sector Protection Register 3DH 2AH 7FH FCH

Figure 9-3. Program Sector Protection Register

Opcode

Byte 1

Each transition represents 8 bits

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

Data Byte

n + 1

Data Byte

n + 63

AT45DB321D

3597J–DFLASH–4/08

9.1.3 Read Sector Protection Register Command

To read the Sector Protection Register, the CS been asserted, an opcode of 32H and 3 dummy bytes must be clocked in via the SI pin. After the last bit of the opcode and dummy bytes have been clocked in, any additional clock pulses on the SCK pins will result in data for the content of the Sector Protection Register being output on the SO pin. The first byte corresponds to sector 0 (0a, 0b), the second byte corresponds to sector 1 and the last byte (byte 64) corresponds to sector 63. Once the last byte of the Sector Protection Register has been clocked out, any additional clock pulses will result in undefined data being output on the SO pin. The CS ister operation and put the output into a high-impedance state.

Command Byte 1 Byte 2 Byte 3 Byte 4

Read Sector Protection Register 32H xxH xxH xxH

Note: xx = Dummy Byte

Figure 9-4. Read Sector Protection Register

AT45DB321D

pin must first be asserted. Once the CS pin has

must be deasserted to terminate the Read Sector Protection Reg-

Opcode X X X

Each transition represents 8 bits

9.1.4 Various Aspects About the Sector Protection Register

The Sector Protection Register is subject to a limit of 10,000 erase/program cycles. Users are encouraged to carefully evaluate the number of times the Sector Protection Register will be modified during the course of the applications’ life cycle. If the application requires that the Sector Protection Register be modified more than the specified limit of 10,000 cycles because the application needs to temporarily unprotect individual sectors (sector protection remains enabled while the Sector Protection Register is reprogrammed), then the application will need to limit this practice. Instead, a combination of temporarily unprotecting individual sectors along with disabling sector protection completely will need to be implemented by the application to ensure that the limit of 10,000 cycles is not exceeded.

Data BytenData Byte

n + 1

Data Byte

n + 63

3597J–DFLASH–4/08

10. Security Features

10.1 Sector Lockdown

The device incorporates a Sector Lockdown mechanism that allows each individual sector to be permanently locked so that it becomes read only. This is useful for applications that require the ability to permanently protect a number of sectors against malicious attempts at altering program code or security information. Once a sector is locked down, it can never be erased or pro-

grammed, and it can never be unlocked.

To issue the Sector Lockdown command, the CS any other command. Once the CS sequence must be clocked into the device in the correct order. The 4-byte opcode sequence must start with 3DH and be followed by 2AH, 7FH, and 30H. After the last byte of the command sequence has been clocked in, then three address bytes specifying any address within the sector to be locked down must be clocked into the device. After the last address bit has been clocked in, the CS sequence.

The lockdown sequence should take place in a maximum time of t Register will indicate that the device is busy. If the device is powered-down before the completion of the lockdown sequence, then the lockdown status of the sector cannot be guaranteed. In this case, it is recommended that the user read the Sector Lockdown Register to determine the status of the appropriate sector lockdown bits or bytes and reissue the Sector Lockdown command if necessary.

Command Byte 1 Byte 2 Byte 3 Byte 4

Sector Lockdown 3DH 2AH 7FH 30H

Figure 10-1. Sector Lockdown

Opcode

Byte 1

Opcode

Byte 2

pin must first be asserted as it would be for

pin has been asserted, the appropriate 4-byte opcode

pin must then be deasserted to initiate the internally self-timed lockdown

, during which time the Status

Opcode

Byte 3

Opcode

Byte 4

Address

Bytes

Address

Bytes

Address

Bytes

Each transition represents 8 bits

AT45DB321D

3597J–DFLASH–4/08

10.1.1 Sector Lockdown Register

Sector Lockdown Register is a nonvolatile register that contains 64 bytes of data, as shown below:

Sector Number 0 (0a, 0b) 1 to 63

AT45DB321D

Locked

Unlocked 00H

Table 10-1. Sector 0 (0a, 0b)

Sectors 0a, 0b Unlocked 00 00 00 00 00H

Sector 0a Locked (Pages 0-7) 11 00 00 00 C0H

Sector 0b Locked (Pages 8-127) 00 11 00 00 30H

Sectors 0a, 0b Locked (Pages 0-127) 11 11 00 00 F0H

10.1.2 Reading the Sector Lockdown Register

The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down. To read the Sector Lockdown Register, the CS asserted. Once the CS

pin has been asserted, an opcode of 35H and 3 dummy bytes must be clocked into the device via the SI pin. After the last bit of the opcode and dummy bytes have been clocked in, the data for the contents of the Sector Lockdown Register will be clocked out on the SO pin. The first byte corresponds to sector 0 (0a, 0b) the second byte corresponds to sector 1 and the last byte (byte 16) corresponds to sector 15. After the last byte of the Sector Lockdown Register has been read, additional pulses on the SCK pin will simply result in undefined data being output on the SO pin.

See Below

0a 0b

(Pages 0-7) (Pages 8-127)

Bit 7, 6 Bit 5, 4 Bit 1, 0

Bit 3, 2

pin must first be

FFH

Data

Val ue

Deasserting the CS SO pin into a high-impedance state.

Table 10-2 details the values read from the Sector Lockdown Register.

Table 10-2. Sector Lockdown Register

Command Byte 1 Byte 2 Byte 3 Byte 4

Read Sector Lockdown Register 35H xxH xxH xxH

Note: xx = Dummy Byte

Figure 10-2. Read Sector Lockdown Register

Opcode X X X

Each transition represents 8 bits

3597J–DFLASH–4/08

pin will terminate the Read Sector Lockdown Register operation and put the

Data BytenData Byte

n + 1

Data Byte

n + 63

10.2 Security Register

The device contains a specialized Security Register that can be used for purposes such as unique device serialization or locked key storage. The register is comprised of a total of 128 bytes that is divided into two portions. The first 64 bytes (byte locations 0 through 63) of the Security Register are allocated as a one-time user programmable space. Once these 64 bytes have been programmed, they cannot be reprogrammed. The remaining 64 bytes of the register (byte locations 64 through 127) are factory programmed by Atmel and will contain a unique value for each device. The factory programmed data is fixed and cannot be changed.

Table 10-3. Security Register

Data Type One-time User Programmable Factory Programmed By Atmel

10.2.1 Programming the Security Register

The user programmable portion of the Security Register does not need to be erased before it is programmed.

Security Register Byte Number

01• • • 62 63 64 65 • • • 126 127

To program the Security Register, the CS

pin must first be asserted and the appropriate 4-byte opcode sequence must be clocked into the device in the correct order. The 4-byte opcode sequence must start with 9BH and be followed by 00H, 00H, and 00H. After the last bit of the opcode sequence has been clocked into the device, the data for the contents of the 64-byte user programmable portion of the Security Register must be clocked in.

After the last data byte has been clocked in, the CS

pin must be deasserted to initiate the internally self-timed program cycle. The programming of the Security Register should take place in a time of t

, during which time the Status Register will indicate that the device is busy. If the device

is powered-down during the program cycle, then the contents of the 64-byte user programmable portion of the Security Register cannot be guaranteed.

If the full 64 bytes of data is not clocked in before the CS

pin is deasserted, then the values of the byte locations not clocked in cannot be guaranteed. For example, if only the first two bytes are clocked in instead of the complete 64 bytes, then the remaining 62 bytes of the user programmable portion of the Security Register cannot be guaranteed. Furthermore, if more than 64 bytes of data is clocked into the device, then the data will wrap back around to the beginning of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at byte location 0 of the Security Register.

The user programmable portion of the Security Register can only be programmed one time. Therefore, it is not possible to only program the first two bytes of the register and then pro-

gram the remaining 62 bytes at a later time.

The Program Security Register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of the buffer 1 will be altered from its previous state when this command is issued.

Figure 10-3. Program Security Register

Each transition represents 8 bits

Opcode

Byte 1

AT45DB321D

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

Data Byte

n + 1

Data Byte

n + x

3597J–DFLASH–4/08

10.2.2 Reading the Security Register

The Security Register can be read by first asserting the CS of 77H followed by three dummy bytes. After the last don't care bit has been clocked in, the content of the Security Register can be clocked out on the SO pins. After the last byte of the Security Register has been read, additional pulses on the SCK pin will simply result in undefined data being output on the SO pins.

AT45DB321D

pin and then clocking in an opcode

Deasserting the CS

pin will terminate the Read Security Register operation and put the SO pins

into a high-impedance state.

Figure 10-4. Read Security Register

Opcode X X X

Each transition represents 8 bits

11. Additional Commands

11.1 Main Memory Page to Buffer Transfer

A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start the operation for the DataFlash standard page size (528 bytes), a 1-byte opcode, 53H for buffer 1 and 55H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 1 don’t care bit, 13-page address bit (PA12 - PA0), which specify the page in main memory that is to be transferred, and 10 don’t care bits. To perform a main memory page to buffer transfer for the binary page size (512 bytes), the opcode 53H for buffer 1 or 55H for buffer 2, must be clocked into the device followed by three address bytes consisting of 2 don’t care bits, 13-page address bits (A21 - A9) which specify the page in the main memory that is to be transferred, and 9 don’t care bits. The CS opcode and the address bytes from the input pin (SI). The transfer of the page of data from the main memory to the buffer will begin when the CS ing the transfer of a page of data (t monitored to determine whether the transfer has been completed.

Data BytenData Byte

n + 1

Data Byte

n + x

pin must be low while toggling the SCK pin to load the

pin transitions from a low to a high state. Dur-

), the status register can be read or the RDY/BUSY can be

XFR

3597J–DFLASH–4/08

11.2 Main Memory Page to Buffer Compare

A page of data in the main memory can be compared to the data in buffer 1 or buffer 2. To initiate the operation for DataFlash standard page size, a 1-byte opcode, 60H for buffer 1 and 61H for buffer 2, must be clocked into the device, followed by three address bytes consisting of 1 don’t care bit, 13-page address bits (PA12 - PA0) that specify the page in the main memory that is to be compared to the buffer, and 10 don’t care bits. To start a main memory page to buffer compare for a binary page size, the opcode 60H for buffer 1 or 61H for buffer 2, must be clocked into the device followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory that is to be compared to the buffer, and 9 don’t care bits. The CS opcode and the address bytes from the input pin (SI). On the low-to-high transition of the CS the data bytes in the selected main memory page will be compared with the data bytes in buffer 1 or buffer 2. During this time (t the part is busy. On completion of the compare operation, bit 6 of the status register is updated with the result of the compare.

11.3 Auto Page Rewrite

This mode is only needed if multiple bytes within a page or multiple pages of data are modified in a random fashion within a sector. This mode is a combination of two operations: Main Memory Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data (from buffer 1 or buffer 2) is programmed back into its original page of main memory. To start the rewrite operation for the DataFlash standard page size (528 bytes), a 1-byte opcode, 58H for buffer 1 or 59H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 1 don’t care bit, 13-page address bits (PA12-PA0) that specify the page in main memory to be rewritten and 10 don’t care bits. To initiate an auto page rewrite for a binary page size (512 bytes), the opcode 58H for buffer 1 or 59H for buffer 2, must be clocked into the device followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory that is to be written and 9 don’t care bits. When a lowto-high transition occurs on the CS memory to a buffer and then program the data from the buffer back into same page of main memory. The operation is internally self-timed and should take place in a maximum time of t During this time, the status register and the RDY/BUSY

pin must be low while toggling the SCK pin to load the

), the status register and the RDY/BUSY pin will indicate that

COMP

pin, the part will first transfer data from the page in main

pin will indicate that the part is busy.

pin,

If a sector is programmed or reprogrammed sequentially page by page, then the programming algorithm shown in Figure 25-1 (page 45) is recommended. Otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then the programming algorithm shown in Figure 25-2 (page 46) is recommended. Each page within a sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations in that sector.

AT45DB321D

3597J–DFLASH–4/08

11.4 Status Register Read

The status register can be used to determine the device’s ready/busy status, page size, a Main Memory Page to Buffer Compare operation result, the Sector Protection status or the device density. The Status Register can be read at any time, including during an internally self-timed program or erase operation. To read the status register, the CS opcode of D7H must be loaded into the device. After the opcode is clocked in, the 1-byte status register will be clocked out on the output pin (SO), starting with the next clock cycle. The data in the status register, starting with the MSB (bit 7), will be clocked out on the SO pin during the next eight clock cycles. After the one byte of the status register has been clocked out, the sequence will repeat itself (as long as CS register is constantly updated, so each repeating sequence will output new data.

Ready/busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device is not busy and is ready to accept the next command. If bit 7 is a 0, then the device is in a busy state. Since the data in the status register is constantly updated, the user must toggle SCK pin to check the ready/busy status. There are several operations that can cause the device to be in a busy state: Main Memory Page to Buffer Transfer, Main Memory Page to Buffer Compare, Buffer to Main Memory Page Program, Main Memory Page Program through Buffer, Page Erase, Block Erase, Sector Erase, Chip Erase and Auto Page Rewrite.

The result of the most recent Main Memory Page to Buffer Compare operation is indicated using bit 6 of the status register. If bit 6 is a 0, then the data in the main memory page matches the data in the buffer. If bit 6 is a 1, then at least one bit of the data in the main memory page does not match the data in the buffer.

AT45DB321D

pin must be asserted and the

remains low and SCK is being toggled). The data in the status

Bit 1 in the Status Register is used to provide information to the user whether or not the sector protection has been enabled or disabled, either by software-controlled method or hardware-controlled method. A logic 1 indicates that sector protection has been enabled and logic 0 indicates that sector protection has been disabled.

Bit 0 in the Status Register indicates whether the page size of the main memory array is configured for “power of 2” binary page size (512 bytes) or DataFlash standard page size (528 bytes). If bit 0 is a 1, then the page size is set to 512 bytes. If bit 0 is a 0, then the page size is set to 528 bytes.

The device density is indicated using bits 5, 4, 3, and 2 of the status register. For the AT45DB321D, the four bits are 1101 The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices. The device density is not the same as the density code indicated in the JEDEC device ID information. The device density is provided only for backward compatibility.

Table 11-1. Status Register Format

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

RDY/BUSY

COMP 1 1 0 1 PROTECT PAGE SIZE

3597J–DFLASH–4/08

12. Deep Power-down

After initial power-up, the device will default in standby mode. The Deep Power-down command allows the device to enter into the lowest power consumption mode. To enter the Deep Powerdown mode, the CS of B9H command must be clocked in via input pin (SI). After the last bit of the command has been clocked in, the CS After the CS maximum t are ignored except for the Resume from Deep Power-down command.

Command Opcode

Deep Power-down B9H

Figure 12-1. Deep Power-down

pin must first be asserted. Once the CS pin has been asserted, an opcode

pin must be de-asserted to initiate the Deep Power-down operation.

pin is de-asserted, the will device enter the Deep Power-down mode within the

time. Once the device has entered the Deep Power-down mode, all instructions

EDPD

12.1 Resume from Deep Power-down

The Resume from Deep Power-down command takes the device out of the Deep Power-down mode and returns it to the normal standby mode. To Resume from Deep Power-down mode, the CS

pin must first be asserted and an opcode of ABH command must be clocked in via input pin (SI). After the last bit of the command has been clocked in, the CS terminate the Deep Power-down mode. After the CS the normal standby mode within the maximum t the t down, the device will return to the normal standby mode.

Command Opcode

Resume from Deep Power-down ABH

Figure 12-2. Resume from Deep Power-Down

time before the device can receive any commands. After resuming form Deep Power-

RDPD

Opcode

Each transition represents 8 bits

RDPD

Opcode

pin must be de-asserted to pin is de-asserted, the device will return to time. The CS pin must remain high during

AT45DB321D

Each transition represents 8 bits

3597J–DFLASH–4/08

13. “Power of 2” Binary Page Size Option

“Power of 2” binary page size Configuration Register is a user-programmable nonvolatile register that allows the page size of the main memory to be configured for binary page size (512 bytes) or DataFlash standard page size (528 bytes). The “power of 2” page size is a one-

time programmable configuration register and once the device is configured for “power of 2” page size, it cannot be reconfigured again. The devices are initially shipped with the

page size set to 528 bytes. The user has the option of ordering binary page size (512 bytes) devices from the factory. For details, please refer to Section 26. ”Ordering Information” on

page 47.

For the binary “power of 2” page size to become effective, the following steps must be followed:

1. Program the one-time programmable configuration resister using opcode sequence 3DH, 2AH, 80H and A6H (please see Section 13.1).

2. Power cycle the device (i.e. power down and power up again).

3. The page for the binary page size can now be programmed.

If the above steps are not followed to set the page size prior to page programming, incorrect data during a read operation may be encountered.

13.1 Programming the Configuration Register

To program the Configuration Register for “power of 2” binary page size, the CS pin must first be asserted as it would be with any other command. Once the CS appropriate 4-byte opcode sequence must be clocked into the device in the correct order. The 4-byte opcode sequence must start with 3DH and be followed by 2AH, 80H, and A6H. After the last bit of the opcode sequence has been clocked in, the CS the internally self-timed program cycle. The programming of the Configuration Register should take place in a time of t busy. The device must be power cycled after the completion of the program cycle to set the “power of 2” page size. If the device is powered-down before the completion of the program cycle, then setting the Configuration Register cannot be guaranteed. However, the user should check bit 0 of the status register to see whether the page size was configured for binary page size. If not, the command can be re-issued again.

, during which time the Status Register will indicate that the device is

AT45DB321D

pin has been asserted, the

pin must be deasserted to initiate

3597J–DFLASH–4/08

Command Byte 1 Byte 2 Byte 3 Byte 4

Power of Two Page Size 3DH 2AH 80H A6H

Figure 13-1. Erase Sector Protection Register

Opcode

Byte 1

Each transition represents 8 bits

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

14. Manufacturer and Device ID Read

Identification information can be read from the device to enable systems to electronically query and identify the device while it is in system. The identification method and the command opcode comply with the JEDEC standard for “Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices”. The type of information that can be read from the device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the vendor specific Extended Device Information.

To read the identification information, the CS

pin must first be asserted and the opcode of 9FH must be clocked into the device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the subsequent clock cycles. The first byte that will be output will be the Manufacturer ID followed by two bytes of Device ID information. The fourth byte output will be the Extended Device Information String Length, which will be 00H indicating that no Extended Device Information follows. As indicated in the JEDEC standard, reading the Extended Device Information String Length and any subsequent data is optional.

Deasserting the CS the SO pin into a high-impedance state. The CS

pin will terminate the Manufacturer and Device ID Read operation and put

pin can be deasserted at any time and does not

require that a full byte of data be read.

14.1 Manufacturer and Device ID Information

14.1.1 Byte 1 – Manufacturer ID

Hex

Val ue

1FH 0 0 0 1 1 1 1 1 Manufacturer ID 1FH = Atmel

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

14.1.2 Byte 2 – Device ID (Part 1)

Hex

Val ue

27H 0 0 1 0 0 1 1 1 Density Code 00111 = 32-Mbit

Family Code Density Code

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

JEDEC Assigned Code

Family Code 001 = DataFlash

14.1.3 Byte 3 – Device ID (Part 2)

Hex

Val ue

00H 0 0 0 0 0 0 0 1 Product Version 00001 = Second Version

MLC Code Product Version Code

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

MLC Code 000 = 1-bit/Cell Technology

14.1.4 Byte 4 – Extended Device Information String Length

Hex

Val ue

00H 0 0 0 0 0 0 0 0 Byte Count 00H = 0 Bytes of Information

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

AT45DB321D

Byte Count

3597J–DFLASH–4/08

AT45DB321D

Each transition represents 8 bits

Note: Based on JEDEC publication 106 (JEP106), Manufacturer ID data can be comprised of any number of bytes. Some manufacturers may have

Manufacturer ID codes that are two, three or even four bytes long with the first byte(s) in the sequence being 7FH. A system should detect code 7FH as a “Continuation Code” and continue to read Manufacturer ID bytes. The first non-7FH byte would signify the last byte of Manufacturer ID data. For Atmel (and some other manufacturers), the Manufacturer ID data is comprised of only one byte.

9FH

Opcode

1FH

Manufacturer ID

Byte 1

27H 00H

Device ID

Byte 2

Device ID

Byte 3

01H Data Data

Extended

Device

Information

String Length

Extended

Device

Information

Byte x

This information would only be output

if the Extended Device Information String Length

value was something other than 00H.

Extended

Device

Information

Byte x + 1

14.2 Operation Mode Summary

The commands described previously can be grouped into four different categories to better describe which commands can be executed at what times.

Group A commands consist of:

1. Main Memory Page Read

2. Continuous Array Read

3. Read Sector Protection Register

4. Read Sector Lockdown Register

5. Read Security Register

Group B commands consist of:

1. Page Erase

2. Block Erase

3. Sector Erase

4. Chip Erase

5. Main Memory Page to Buffer 1 (or 2) Transfer

6. Main Memory Page to Buffer 1 (or 2) Compare

7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase

8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase

9. Main Memory Page Program through Buffer 1 (or 2)

10. Auto Page Rewrite

Group C commands consist of:

1. Buffer 1 (or 2) Read

2. Buffer 1 (or 2) Write

3. Status Register Read

4. Manufacturer and Device ID Read

3597J–DFLASH–4/08

Group D commands consist of:

1. Erase Sector Protection Register

2. Program Sector Protection Register

3. Sector Lockdown

4. Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be started. However, during the internally self-timed portion of Group B commands, any command in Group C can be executed. The Group B commands using buffer 1 should use Group C commands using buffer 2 and vice versa. Finally, during the internally selftimed portion of a Group D command, only the Status Register Read command should be executed.

15. Command Tables

Table 15-1. Read Commands

Command Opcode

Main Memory Page Read D2H

Continuous Array Read (Legacy Command) E8H

Continuous Array Read (Low Frequency) 03H

Continuous Array Read (High Frequency) 0BH

Buffer 1 Read (Low Frequency) D1H

Buffer 2 Read (Low Frequency) D3H

Buffer 1 Read D4H

Buffer 2 Read D6H

Table 15-2. Program and Erase Commands

Command Opcode

Buffer 1 Write 84H

Buffer 2 Write 87H

Buffer 1 to Main Memory Page Program with Built-in Erase 83H

Buffer 2 to Main Memory Page Program with Built-in Erase 86H

Buffer 1 to Main Memory Page Program without Built-in Erase 88H

Buffer 2 to Main Memory Page Program without Built-in Erase 89H

Page Erase 81H

Block Erase 50H

Sector Erase 7CH

Chip Erase C7H, 94H, 80H, 9AH

Main Memory Page Program Through Buffer 1 82H

Main Memory Page Program Through Buffer 2 85H

AT45DB321D

3597J–DFLASH–4/08

AT45DB321D

Table 15-3. Protection and Security Commands

Command Opcode

Enable Sector Protection 3DH + 2AH + 7FH + A9H

Disable Sector Protection 3DH + 2AH + 7FH + 9AH

Erase Sector Protection Register 3DH + 2AH + 7FH + CFH

Program Sector Protection Register 3DH + 2AH + 7FH + FCH

Read Sector Protection Register 32H

Sector Lockdown 3DH + 2AH + 7FH + 30H

Read Sector Lockdown Register 35H

Program Security Register 9BH + 00H + 00H + 00H

Read Security Register 77H

Table 15-4. Additional Commands

Command Opcode

Main Memory Page to Buffer 1 Transfer 53H

Main Memory Page to Buffer 2 Transfer 55H

Main Memory Page to Buffer 1 Compare 60H

Main Memory Page to Buffer 2 Compare 61H

Auto Page Rewrite through Buffer 1 58H

Auto Page Rewrite through Buffer 2 59H

Deep Power-down B9H

Resume from Deep Power-down ABH

Status Register Read D7H

Manufacturer and Device ID Read 9FH

Table 15-5. Legacy Commands

Command Opcode

Buffer 1 Read 54H

Buffer 2 Read 56H

Main Memory Page Read 52H

Continuous Array Read 68H

(1)

3597J–DFLASH–4/08

Status Register Read 57H

Note: 1. These legacy commands are not recommended for new designs.

Table 15-6. Detailed Bit-level Addressing Sequence for Binary Page Size (512 Bytes)

Page Size = 512 bytes Address Byte Address Byte Address Byte

Reserved

A21

A20

A19

A18

A17

A16

A15

A14

A13

A12

A11

A10

A9A8A7A6A5A4A3A2A1

03h 0000001 1 xxAAAAAA AAAAAAA A AAAAAAA A

0Bh 00001011 xxAAAAAA AAAAAAA A AAAAAAA A

50h 0101000 0 xxAAAAAA AAAA x x x x x x xxxxx x

53h 0101001 1 xxAAAAAA AAAAAAA x x x xxxxx x

55h 0101010 1 xxAAAAAA AAAAAAA x x x xxxxx x

58h 0101100 0 xxAAAAAA AAAAAAA x x x xxxxx x

59h 0101100 1 xxAAAAAA AAAAAAA x x x xxxxx x

60h 0110000 0 xxAAAAAA AAAAAAA x x x xxxxx x

61h 0110000 1 xxAAAAAA AAAAAAA x x x xxxxx x

77h 0111011 1 xxxxxxx x xxxxxxxx xxxxxxx x

7Ch 01111100 xxAAAAx x x x xxxxx xxxxxxxx x

81h 1000000 1 xxAAAAAA AAAAAAA X x x xxxxx x

82h 1000001 0 xxAAAAAA AAAAAAA A AAAAAAA A

83h 1000001 1 xxAAAAAA AAAAAAA X x x xxxxx x

84h 1000010 0 xxxxxxx x xxxxxxxAAAAAAAA A

85h 1000010 1 xxAAAAAA AAAAAAA A AAAAAAA A

86h 1000011 0 xxAAAAAA AAAAAAA x x x xxxxx x

87h 1000011 1 xxxxxxx x xxxxxxxAAAAAAAA A

88h 1000100 0 xxAAAAAA AAAAAAA x x x xxxxx x

89h 1000100 1 xxAAAAAA AAAAAAA x x x xxxxx x

9Fh 10011111 N/A N/A N/A

B9h 10111001 N/A N/A N/A

ABh 1010101 1 N/A N/A N/A

D1h 1101000 1 xxxxxxx x xxxxxxxAAAAAAAA A

D2h 1101001 0 xxAAAAA A AAAAAAAA AAAAAAA A

D3h 1101001 1 xxxxxxx x xxxxxxxAAAAAAAA A

D4h 1101010 0 xxxxxxx x xxxxxxxAAAAAAAA A

D6h 1101011 0 xxxxxxx x xxxxxxxAAAAAAAA A

D7h 1101011 1 N/A N/A N/A

E8h 1110100 0 xxAAAAAA AAAAAAA A AAAAAAA A

Notes: x = Don’t Care

Additional

Don’t Care

BytesOpcode Opcode

N/A

AT45DB321D

3597J–DFLASH–4/08

AT45DB321D

Table 15-7. Detailed Bit-level Addressing Sequence for DataFlash Standard Page Size (528 Bytes)

Page Size = 528 bytes Address Byte Address Byte Address Byte

Reserved

PA1 2

PA1 1

PA1 0

PA9

PA8

PA7

PA6

PA5

PA4

PA3

PA2

PA1

PA0

BA9

BA8

BA7

BA6

BA5

BA4

BA3

03h 00 0 0 0 01 1 xPPPPPP P PPPPPPBB BBBBBBB B

0Bh 0 00 0 10 1 1 xPPPPPP PPPPPPPB B BBBBBBB B

50h 0101000 0 xPPPPPPPPPPxxxx x xxxxxxx x

53h 01 0 1 0 01 1 xPPPPPP P PPPPPPx x x xx x x x x x

55h 01 0 1 0 10 1 xPPPPPP P PPPPPPx x x xx x x x x x

58h 01 0 1 1 00 0 xPPPPPP P PPPPPPx x x xx x x x x x

59h 01 0 1 1 00 1 xPPPPPP P PPPPPPx x x xx x x x x x

60h 01 1 0 0 00 0 xPPPPPP P PPPPPPx x x xx x x x x x

61h 01 1 0 0 00 1 xPPPPPP P PPPPPPx x x xx x x x x x

77h 01110111 xxxxxxxx xxxxxxxx xxxxxxx x

7Ch 01111100 xPPPPxxx xxxxxxx xxxxxxxx x

81h 10 0 0 0 00 1 xPPPPPP P PPPPPPx x x xx x x x x x

82h 10 0 0 0 01 0 xPPPPPP P PPPPPPBB BBBBBBB B

83h 10 0 0 0 01 1 xPPPPPP P PPPPPPx x x xx x x x x x

84h 10000100 xxxxxxxx xxxxxxBBBBBBBBB B

85h 10 0 0 0 10 1 xPPPPPP P PPPPPPBB BBBBBBB B

86h 10 0 0 0 11 0 xPPPPPP P PPPPPPx x x xx x x x x x

87h 10000111 xxxxxxxx xxxxxxBBBBBBBBB B

88h 10 0 0 1 00 0 xPPPPPP P PPPPPPx x x xx x x x x x

89h 10 0 0 1 00 1 xPPPPPP P PPPPPPx x x xx x x x x x

9Fh 1001111 1 N/A N/A N/A

B9h 10111001 N/A N/A N/A

ABh 1010101 1 N/A N/A N/A

D1h 11010001 xxxxxxxx xxxxxxBBBBBBBBB B

D2h 1 1 01 0 0 1 0 x PPPPPP PPPPPPPB B BBBBBBB B

D3h 11010001 xxxxxxxx xxxxxxBBBBBBBBB B

D4h 11010100 xxxxxxxx xxxxxxBBBBBBBBB B

D6h 11010110 xxxxxxxx xxxxxxBBBBBBBBB B

D7h 11010111 N/A N/A N/A

E8h 1 11 0 10 0 0 xPPPPPP PPPPPPPB B BBBBBBB B

Notes: P = Page Address Bit B = Byte/Buffer Address Bit x = Don’t Care

Additional

Don’t Care

BA2

BA1

BytesOpcode Opcode

BA0

N/A

3597J–DFLASH–4/08

16. Power-on/Reset State

When power is first applied to the device, or when recovering from a reset condition, the device will default to Mode 3. In addition, the output pin (SO) will be in a high impedance state, and a high-to-low transition on the CS 3 or Mode 0) will be automatically selected on every falling edge of CS clock state.

16.1 Initial Power-up/Reset Timing Restrictions

At power up, the device must not be selected until the supply voltage reaches the VCC (min.) and further delay of t reset mode until the V operations are disabled and the device does not respond to any commands. After power up is applied and the V before the device can be selected in order to perform a read operation.

. During power-up, the internal Power-on Reset circuitry keeps the device in

VCSL

rises above the Power-on Reset threshold value (V

is at the minimum operating voltage VCC (min.), the t

pin will be required to start a valid instruction. The mode (Mode

by sampling the inactive

). At this time, all

POR

delay is required

VCSL

Similarly, the t value (V

) before the device can perform a write (Program or Erase) operation. After initial

POR

power-up, the device will default in Standby mode.

Symbol Parameter Min Typ Max Units

VCSL

PUW

POR

VCC (min.) to Chip Select low 70 µs

Power-Up Device Delay before Write Allowed 20 ms

Power-ON Reset Voltage 1.5 2.5 V

17. System Considerations

The RapidS serial interface is controlled by the clock SCK, serial input SI and chip select CS pins. These signals must rise and fall monotonically and be free from noise. Excessive noise or ringing on these pins can be misinterpreted as multiple edges and cause improper operation of the device. The PC board traces must be kept to a minimum distance or appropriately terminated to ensure proper operation. If necessary, decoupling capacitors can be added on these pins to provide filtering against noise glitches.

As system complexity continues to increase, voltage regulation is becoming more important. A key element of any voltage regulation scheme is its current sourcing capability. Like all Flash memories, the peak current for DataFlash occur during the programming and erase operation. The regulator needs to supply this peak current requirement. An under specified regulator can cause current starvation. Besides increasing system noise, current starvation during programming or erase can lead to improper operation and possible data corruption.

delay is required after the VCC rises above the Power-on Reset threshold

PUW

AT45DB321D

3597J–DFLASH–4/08

AT45DB321D

18. Electrical Specifications

Table 18-1. Absolute Maximum Ratings*

Temperature under Bias ............................... -55° C to +125° C

Storage Temperature .................................... -65° C to +150° C

All Input Voltages (including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to V

+ 0.6V

Table 18-2. DC and AC Operating Range

Operating Temperature (Case) Ind. -40° C to 85° C

Power Supply 2.7V to 3.6V

Table 18-3. DC Characteristics

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

AT45DB321D

Symbol Parameter Condition Min Typ Max Units

(1)

CC1

CC2

Notes: 1. I

Deep Power-down Current

Standby Current

CS inputs at CMOS levels

, RESET, WP = VIH, all

inputs at CMOS levels

f = 20 MHz; I

= 3.6V

f = 33 MHz; I

= 0 mA;

OUT

= 0 mA;

OUT

VCC = 3.6V

Active Current, Read Operation

f = 50 MHz; I

= 0 mA;

OUT

VCC = 3.6V

= 0 mA;

OUT

Active Current, Program/Erase Operation

f = 66 MHz; I

= 3.6V

= 3.6V 12 17 mA

Input Load Current VIN = CMOS levels 1 µA

Output Leakage Current V

= CMOS levels 1 µA

I/O

Input Low Voltage VCC x 0.3 V

Input High Voltage VCC x 0.7 V

Output Low Voltage IOL = 1.6 mA; VCC = 2.7V 0.4 V

Output High Voltage IOH = -100 µA VCC - 0.2V V

during a buffer read is 20 mA maximum @ 20 MHz.

CC1

510µA

25 50 µA

710mA

812mA

10 14 mA

11 15 mA

, RESET, WP = VIH, all

2. All inputs are 5 volts tolerant.

3597J–DFLASH–4/08

Table 18-4. AC Characteristics – RapidS/Serial Interface

AT45DB321D

Symbol Parameter

SCK

CAR1

CAR2

SCKR

SCKF

CSS

CSH

CSB

DIS

WPE

WPD

EDPD

RDPD

XFR

comp

RST

REC

(1)

SCK Frequency 66 MHz

SCK Frequency for Continuous Array Read 66 MHz

SCK Frequency for Continuous Array Read (Low Frequency)

SCK High Time 6.8 ns

SCK Low Time 6.8 ns

SCK Rise Time, Peak-to-Peak (Slew Rate) 0.1 V/ns

SCK Fall Time, Peak-to-Peak (Slew Rate) 0.1 V/ns

Minimum CS High Time 50 ns

CS Setup Time 5 ns

CS Hold Time 5 ns

CS High to RDY/BUSY Low 100 ns

Data In Setup Time 2 ns

Data In Hold Time 3 ns

Output Hold Time 0 ns

Output Disable Time 6 ns

Output Valid 6ns

WP Low to Protection Enabled 1 µs

WP High to Protection Disabled 1 µs

CS High to Deep Power-down Mode 3 µs

CS High to Standby Mode 35 µs

Page to Buffer Transfer Time 200 µs

Page to Buffer Compare Time 200 µs

Page Erase and Programming Time (512/528 bytes) 17 40 ms

Page Programming Time (512/528 bytes) 3 6 ms

Page Erase Time (512/528 bytes) 15 35 ms

Block Erase Time (4,096/4,224 bytes) 45 100 ms

Chip Erase Time TBD TBD s

Sector Erase Time (262,144/270,336 bytes) 1.6 5 s

RESET Pulse Width 10 µs

RESET Recovery Time 1 µs

Min Typ Max Units

33 MHz

AT45DB321D

3597J–DFLASH–4/08

19. Input Test Waveforms and Measurement Levels

AT45DB321D

tR, tF < 2 ns (10% to 90%)

20. Output Test Load

21. AC Waveforms

Six different timing waveforms are shown on page 36. Waveform 1 shows the SCK signal being low when CS when CS SCK signal is still low (SCK low time is specified as t RapidS serial interface but for frequencies up to 66 MHz. Waveforms 1 and 2 are compatible with SPI Mode 0 and SPI Mode 3, respectively.

DRIVING

LEVELS

2.4V

0.45V

DEVICE

UNDER

TEST

1.5V

AC MEASUREMENT LEVEL

30 pF

makes a high-to-low transition, and waveform 2 shows the SCK signal being high

makes a high-to-low transition. In both cases, output SO becomes valid while the

). Timing waveforms 1 and 2 conform to

Waveform 3 and waveform 4 illustrate general timing diagram for RapidS serial interface. These are similar to waveform 1 and waveform 2, except that output SO is not restricted to become valid during the t

period. These timing waveforms are valid over the full frequency range (max-

imum frequency = 66 MHz) of the RapidS serial case.

3597J–DFLASH–4/08

21.1 Waveform 1 – SPI Mode 0 Compatible (for frequencies up to 66 MHz)

CSS

CSH

SCK

HIGH IMPEDANCE

VALID OUT

VALID IN

DIS

HIGH IMPEDANCE

21.2 Waveform 2 – SPI Mode 3 Compatible (for frequencies up to 66 MHz)

SCK

HIGH Z

CSS

CSH

VALID OUT

VALID IN

DIS

HIGH IMPEDANCE

21.3 Waveform 3 – RapidS Mode 0 (F

CSS

SCK

HIGH IMPEDANCE

VALID IN

21.4 Waveform 4 – RapidS Mode 3 (F

SCK

CSS

HIGH Z

VALID IN

= 66 MHz)

MAX

= 66 MHz)

MAX

VALID OUT

CSH

DIS

HIGH IMPEDANCE

DIS

HIGH IMPEDANCE

AT45DB321D

3597J–DFLASH–4/08

21.5 Utilizing the RapidS™ Function

To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus. The DataFlash is designed to always clock its data out on the falling edge of the SCK signal and clock data in on the rising edge of SCK.

For full clock cycle operation to be achieved, when the DataFlash is clocking data out on the falling edge of SCK, the host controller should wait until the next falling edge of SCK to latch the data in. Similarly, the host controller should clock its data out on the rising edge of SCK in order to give the DataFlash a full clock cycle to latch the incoming data in on the next rising edge of SCK.

Figure 21-1. RapidS Mode

Slave CS

AT45DB321D

234567

SCK

MOSI

MSB LSB

BYTE-MOSI

MISO

MOSI = Master Out, Slave In MISO = Master In, Slave Out The Master is the host controller and the Slave is the DataFlash

The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK. The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.

A. Master clocks out first bit of BYTE-MOSI on the rising edge of SCK. B. Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK. C. Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK. D. Last bit of BYTE-MOSI is clocked out from the Master. E. Last bit of BYTE-MOSI is clocked into the slave. F. Slave clocks out first bit of BYTE-SO. G. Master clocks in first bit of BYTE-SO. H. Slave clocks out second bit of BYTE-SO. I. Master clocks in last bit of BYTE-SO.

MSB LSB

BYTE-SO

3597J–DFLASH–4/08

21.6 Reset Timing

SCK

RESET

SO (OUTPUT)

SI (INPUT)

Note: The CS signal should be in the high state before the RESET signal is deasserted.

HIGH IMPEDANCE HIGH IMPEDANCE

RST

REC

CSS

21.7 Command Sequence for Read/Write Operations for Page Size 512 Bytes (Except Status Register Read, Manufacturer and Device ID Read)

SI (INPUT) CMD 8 bits

MSB

X X X X X X X X X X X X X X X X LSB

Don’t Care

Bits

Page Address

(A21 - A9)

8 bits

X X X X X X X X

Byte/Buffer Address

(A8 - A0/BFA8 - BFA0)

21.8 Command Sequence for Read/Write Operations for Page Size 528 Bytes (Except Status Register Read, Manufacturer and Device ID Read)

SI (INPUT)

MSB

CMD 8 bits

X X X XX X X X X X X X LSB

1 Don’t Care

Bit

Page Address

(PA12 - PA0)

8 bits

X X X X

8 bits

X X X X X X X X

Byte/Buffer Address

(BA9 - BA0/BFA9 - BFA0)

AT45DB321D

3597J–DFLASH–4/08

22. Write Operations

The following block diagram and waveforms illustrate the various write sequences available.

FLASH MEMORY ARRAY

PAGE (512/528 BYTES)

AT45DB321D

22.1 Buffer Write

SI (INPUT)

BUFFER 1 TO

MAIN MEMORY

PAGE PROGRAM

BUFFER 1

WRITE

CMD

I/O INTERFACE

BINARY PAGE SIZE

15 DON'T CARE + BFA8-BFA0

X···X, BFA9-8

BFA7-0

BUFFER 2 TO MAIN MEMORY PAGE PROGRAM

BUFFER 2 (512/528 BYTES)BUFFER 1 (512/528 BYTES)

BUFFER 2 WRITE

Completes writing into selected buffer

n+1

Last Byte

22.2 Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)

Starts self-timed erase/program operation

BINARY PAGE SIZE

A21-A9 + 9 DON'T CARE BITS

3597J–DFLASH–4/08

SI (INPUT)

Each transition

represents 8 bits

CMD

PA12-6 PA5-0, XX

XXXX XX

n = 1st byte read n+1 = 2nd byte read

23. Read Operations

The following block diagram and waveforms illustrate the various read sequences available.

FLASH MEMORY ARRAY

PAGE (512/528 BYTES)

MAIN MEMORY

PAGE TO

BUFFER 1

READ

23.1 Main Memory Page Read

SI (INPUT)

SO (OUTPUT)

CMD

MAIN MEMORY PAGE READ

I/O INTERFACE

ADDRESS FOR BINARY PAGE SIZE

A21-A16

PA12-6

A15-A8

PA5-0, BA9-8

A7-A0

BA7-0

BUFFER 2 (512/528 BYTES)BUFFER 1 (512/528 BYTES)

4 Dummy Bytes

MAIN MEMORY PAGE TO BUFFER 2

BUFFER 2 READ

n n+1

23.2 Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)

Starts reading page data into buffer

BINARY PAGE SIZE

A21-A9 + 9 DON'T CARE BITS

SI (INPUT)

SO (OUTPUT)

AT45DB321D

CMD

PA12-6

PA5-0, XX

XXXX XXXX

3597J–DFLASH–4/08

23.3 Buffer Read

BINARY PAGE SIZE

15 DON'T CARE + BFA8-BFA0

AT45DB321D

SI (INPUT)

SO (OUTPUT)

CMD

Each transition represents 8 bits

X..X, BFA9-8

BFA7- 0

No Dummy Byte (opcodes D1H and D3H) 1 Dummy Byte (opcodes D4H and D6H)

n n+1

24. Detailed Bit-level Read Waveform – RapidS Serial Interface Mode 0/Mode 3

24.1 Continuous Array Read (Legacy Opcode E8H)

SCK

2310

OPCODE

11101000

MSB MSB

HIGH-IMPEDANCE

675410119812 63666765646233 3431 3229 30 68 71 727069

ADDRESS BITS 32 DON'T CARE BITS

AAAA AAAAA

XXXX XX

MSB

DATA BYTE 1

DDDDDDDDDD

MSB MSB

BIT 4095/4223

OF PAGE n

BIT 0 OF

PAGE n+1

24.2 Continuous Array Read (Opcode 0BH)

SCK

3597J–DFLASH–4/08

2 310

OPCODE

00001011

MSBMSB

HIGH-IMPEDANCE

6754101198 12 39424341403833 3431 3229 304447484645

ADDRESS BITS A21 - A0 DON'T CARE

AAAA AAAAA

36 3735

XXXX XX

MSB

DATA BYTE 1

DDDDDDDDDD

MSBMSB

24.3 Continuous Array Read (Low Frequency: Opcode 03H)

2 310

6754101198 12 37 3833 36353431 3229 30 3940

SCK

OPCODE

00000011

MSBMSB

HIGH-IMPEDANCE

ADDRESS BITS A21-A0

AAAA AAAAA

24.4 Main Memory Page Read (Opcode: D2H)

SCK

2310

OPCODE

11010010

MSB MSB

HIGH-IMPEDANCE

675410119812 63666765646233 3431 3229 30 68 71 727069

ADDRESS BITS 32 DON'T CARE BITS

AAAA AAAAA

DATA BYTE 1

DDDDDDDDDD

MSBMSB

XXXX XX

MSB

DATA BYTE 1

DDDDDDDDDD

MSB MSB

24.5 Buffer Read (Opcode D4H or D6H)

SCK

11010100

MSB MSB

HIGH-IMPEDANCE

AT45DB321D

2310

OPCODE

675410119812 394243414037 3833 36353431 3229 30 44 47 484645

ADDRESS BITS BINARY PAGE SIZE = 15 DON'T CARE + BFA8-BFA0 STANDARD DATAFLASH PAGE SIZE = 14 DON'T CARE + BFA9-BFA0

XXXX AAAXX

DON'T CARE

XXXXXXXX

MSB

DATA BYTE 1

DDDDDDDDDD

MSB MSB

3597J–DFLASH–4/08

24.6 Buffer Read (Low Frequency: Opcode D1H or D3H)

AT45DB321D

2310

675410119812 373833 36353431 3229 30 39 40

SCK

ADDRESS BITS BINARY PAGE SIZE = 15 DON'T CARE + BFA8-BFA0 STANDARD DATAFLASH PAGE SIZE = 14 DON'T CARE + BFA9-BFA0

XXXX AAAXX

OPCODE

11010001

MSB MSB

HIGH-IMPEDANCE

24.7 Read Sector Protection Register (Opcode 32H)

SCK

2310

OPCODE

00110010

MSB MSB

HIGH-IMPEDANCE

675410119812 373833 36353431 3229 30 39 40

DON'T CARE

XXXX XXXXX

DATA BYTE 1

DDDDDDDDDD

MSB MSB

DATA BYTE 1

DDDDDDDDD

MSB MSB

24.8 Read Sector Lockdown Register (Opcode 35H)

3597J–DFLASH–4/08

SCK

2310

OPCODE

00110101

MSB MSB

HIGH-IMPEDANCE

675410119812 373833 36353431 3229 30 39 40

DON'T CARE

XXXX XXXXX

DATA BYTE 1

DDDDDDDDD

MSB MSB

24.9 Read Security Register (Opcode 77H)

2310

675410119812 373833 36353431 3229 30 39 40

SCK

OPCODE

01110111

MSB MSB

HIGH-IMPEDANCE

XXXX XXXXX

24.10 Status Register Read (Opcode D7H)

SCK

2 310

OPCODE

11010111

MSB

HIGH-IMPEDANCE

6754101198 12 21 2217 20191815 1613 14 23 24

MSB MSB

DON'T CARE

DATA BYTE 1

DDDDDDDDD

MSB MSB

STAT US REGISTER DATA STAT US REGISTER DATA

DDDDDD DDDD

DDDDDDDD

MSB

24.11 Manufacturer and Device Read (Opcode 9FH)

87 38

SCK

OPCODE

HIGH-IMPEDANCE

Note: Each transition shown for SI and SO represents one byte (8 bits)

9FH

14 1615 22 2423 30 3231

1FH DEVICE ID BYTE 1 DEVICE ID BYTE 2 00H

AT45DB321D

3597J–DFLASH–4/08

25. Auto Page Rewrite Flowchart

Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially

START

provide address

and data

BUFFER WRITE

(84H, 87H)

MAIN MEMORY PAGE PROGRAM

THROUGH BUFFER

(82H, 85H)

BUFFER TO MAIN

MEMORY PAGE PROGRAM

(83H, 86H)

AT45DB321D

END

Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-

page.

2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer

to Main Memory Page Program operation.

3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page

within the entire array.

3597J–DFLASH–4/08

Figure 25-2. Algorithm for Randomly Modifying Data

START

provide address of

page to modify

MAIN MEMORY PAGE

TO BUFFER TRANSFER

MAIN MEMORY PAGE PROGRAM

THROUGH BUFFER

(82H, 85H)

AUTO PAGE REWRITE

(53H, 55H)

(58H, 59H)

If planning to modify multiple bytes currently stored within a page of the Flash array

BUFFER WRITE

(84H, 87H)

BUFFER TO MAIN

MEMORY PAGE PROGRAM

(83H, 86H)

(2)

INCREMENT PAGE

ADDRESS POINTER

END

Notes: 1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000

cumulative page erase and program operations.

2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command

must use the address specified by the Page Address Pointer.

3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000

cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.

AT45DB321D

(2)

3597J–DFLASH–4/08

26. Ordering Information

26.1 Ordering Code Detail

AT4 5D 3 2 SSU1D–B

Atmel Designator

AT45DB321D

Product Family

Device Density

32 = 32-megabit

Interface

1 = Serial

Device Revision

26.2 Green Package Options (Pb/Halide-free/RoHS Compliant)

Ordering Code

AT45DB321D-MU

AT45DB321D-MU-SL954 AT45DB321D-MU-SL955

AT45DB321D-MWU

AT45DB321D-MWU-SL954 AT45DB321D-MWU-SL955

AT45DB321D-SU AT45DB321D-SU-SL954 AT45DB321D-SU-SL955

AT45DB321D-TU 28T

Notes: 1. The shipping carrier option is not marked on the devices.

2. Standard parts are shipped with the page size set to 528 bytes. The user is able to configure these parts to a 512-byte page size if desired.

3. Parts ordered with suffix SL954 are shipped in bulk with the page size set to 512 bytes. Parts will have a 954 or SL954 marked on them.

4. Parts ordered with suffix SL955 are shipped in tape and reel with the page size set to 512 bytes. Parts will have a 954 or SL954 marked on them.

(1)(2)

Package Lead Finish Operating Voltage f

(3)

(4)

(3)

(4)

(3)

(4)

8M1-A

8MW

8S2

Matte Sn 2.7V to 3.6V 66

Device Grade

U = Matte Sn lead finish, industrial temperature range (-40°C to +85°C)

Package Option

M = 8-pad, 6 x 5 x 1 mm MLF (VDFN) MW = 8-pad, 8 x 6 x 1 mm MLF (VDFN) S = 8-lead, 0.209" wide SOIC T = 28-lead, TSOP

(MHz) Operation Range

SCK

Industrial

(-40° C to 85° C)

2.7V to 3.6V

Package Type

™

8M1-A 8-pad, 6 x 5 x 1.0 mm, Very Thin Micro Lead-frame Package MLF

(VDFN)

8MW 8-pad, 8 x 6 x 1.0 mm, Very Thin Micro Lead-frame Package MLF (VDFN)

8S2 8-lead, 0.209" wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)

28T 28-lead, 8 mm x 13.4 mm, Plastic Thin Small Outline Package, Type I (TSOP)

3597J–DFLASH–4/08

27. Packaging Information

27.1 8M1-A – MLF (VDFN)

Pin 1 ID

SIDE VIEW

TOP VIEW

Pin #1 Notch

(0.20 R)

BOTTOM VIEW

0.45

0.08

COMMON DIMENSIONS

(Unit of Measure = mm)

SYMBOL

A – 0.85 1.00

A1 – – 0.05

A2 0.65 TYP

A3 0.20 TYP

b 0.35 0.40 0.48

D 5.90 6.00 6.10

D1 5.70 5.75 5.80

D2 3.20 3.40 3.60

E 4.90 5.00 5.10

E1 4.70 4.75 4.80

E2 3.80 4.00 4.20

e 1.27

L 0.50 0.60 0.75

– – 12

K 0.25 – –

MIN

NOM

MAX

NOTE

2325 Orchard Parkway

San Jose, CA 95131

AT45DB321D

TITLE

8M1-A, 8-pad, 6 x 5 x 1.00 mm Body, Very Thin Dual Flat Package No Lead (MLF)

DRAWING NO.

8M1-A

3597J–DFLASH–4/08

9/8/06

REV.

27.2 8MW – MLF (VDFN)

Pin 1 ID

AT45DB321D

SIDE VIEW

TOP VIEW

Pin #1 ID

Option A

Option B

Pin #1 Chamfer (C 0.30)

Pin #1 Notch (0.20 R)

BOTTOM VIEW

COMMON DIMENSIONS

(Unit of Measure = mm)

SYMBOL

A – – 1.00

A1 – – 0.05

b 0.35 0.40 0.48

D 7.90 8.00 8.10

D1 6.30 6.40 6.50

E 5.90 6.00 6.10

E1 4.70 4.80 4.90

e 1.27

L 0.45 0.50 0.55

K 0.30 REF

MIN

NOM

MAX

NOTE

2325 Orchard Parkway

San Jose, CA 95131

3597J–DFLASH–4/08

TITLE

8MW, 8-pad, 8 x 6 x 1.0 mm Body, Very Thin Dual Flat Package No Lead (MLF)

DRAWING NO.

8MW

5/25/06

REV.

27.3 8S2 – EIAJ SOIC

TOP VIEW

END VIEW

SIDE VIEW

TOP VIEW

SIDE VIEW

Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.

2. Mismatch of the upper and lower dies and resin burrs are not included.

3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.

4. Determines the true geometric position.

5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.

END VIEW

SYMBOL

A 1.70 2.16

A1 0.05 0.25

b 0.35 0.48 5

C 0.15 0.35 5

D 5.13 5.35

E1 5.18 5.40 2, 3

E 7.70 8.26

L 0.51 0.85

θ 0° 8°

e 1.27 BSC 4

COMMON DIMENSIONS

(Unit of Measure = mm)

MIN

NOM

MAX

NOTE

4/7/06

2325 Orchard Parkway

San Jose, CA 95131

AT45DB321D

TITLE

8S2, 8-lead, 0.209" Body, Plastic Small Outline Package (EIAJ)

DRAWING NO.

REV.

8S2D

3597J–DFLASH–4/08

27.4 28T – TSOP, Type 1

AT45DB321D

PIN 1

Pin 1 Identifier Area

Notes: 1. This package conforms to JEDEC reference MO-183.

2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.

3. Lead coplanarity is 0.10 mm maximum.

0º ~ 5º

SEATING PLANE

SYMBOL

GAGE PLANE

COMMON DIMENSIONS

(Unit of Measure = mm)

MIN

A – – 1.20

A1 0.05 – 0.15

A2 0.90 1.00 1.05

D 13.20 13.40 13.60

D1 11.70 11.80 11.90 Note 2

E 7.90 8.00 8.10 Note 2

L 0.50 0.60 0.70

L1 0.25 BASIC

b 0.17 0.22 0.27

c 0.10 – 0.21

e 0.55 BASIC

NOM

MAX

NOTE

2325 Orchard Parkway

San Jose, CA 95131

3597J–DFLASH–4/08

TITLE

28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline

Package, Type I (TSOP)

DRAWING NO.

28T

12/06/02

REV.

28. Revision History

Revision Level – Release Date History

A – November 2005 Initial Release

B – January 2006

C – March 2006

D – April 2006

E – July 2006 Corrected typographical errors.

F – August 2006

G – September 2006

H – February 2007

Added 6 x 5 mm MLF (VDFN) package. Added text, in “Programming the Configuration Register”, to indicate

that power cycling is required to switch to “power of 2” page size after the opcode enable has been executed.

Corrected typographical error regarding the opcode for chip erase in “Program and Erase Commands” table.

Added Preliminary. Changed the sector size from 256K bytes to 64K bytes. Added the “Legacy Commands” table.

Added 8 x 6 mm MLF (VDFN) package. Changed the sector size of 0a and 0b to 8 pages and 120 pages

respectively. Changed the Product Version Code to 00001.

Added errata regarding Chip Erase. Added AT45DB321D-SU to ordering information and corresponding

8S2 package.

Removed “not recommended for new designs” note from ordering information for 8MW package.

Added AT45DB321D-CNU to ordering information and corresponding 8CN3 package.

Removed “not recommended for new designs” comment from 8MW package drawing.

I – August 2007

J – April 2008

AT45DB321D

Added additional text to “power of 2” binary page size option. Changed t Changed t Changed t Removed AT45DB321D-CNU from ordering information and corresponding 8CN3 package.

Added part number ordering code details for suffixes SL954/955. Added ordering code details.

from 50 µs to 70 µs.

VSCL

from 30 µs to 35 µs.

RDPD

XFR

and t

values from 400 µs to 200 µs.

COMP

3597J–DFLASH–4/08

29. Errata

29.1 Chip Erase

29.1.1 Issue

29.1.2 Workaround

29.1.3 Resolution

AT45DB321D

In a certain percentage of units, the Chip Erase feature may not function correctly and may adversely affect device operation. Therefore, it is recommended that the Chip Erase commands (opcodes C7H, 94H, 80H, and 9AH) not be used.

Use Block Erase (opcode 50H) as an alternative. The Block Erase function is not affected by the Chip Erase issue.

The Chip Erase feature may be fixed with a new revision of the device. Please contact Atmel for the estimated availability of devices with the fix.

3597J–DFLASH–4/08

Headquarters International

Atmel Corporation

2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600

Atmel Asia

Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369

Product Contact

Web Site

www.atmel.com

Literature Requests

www.atmel.com/literature

Atmel Europe

Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11

Technical Support

dataflash@atmel.com

Atmel Japan

9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581

Sales Contact

www.atmel.com/contacts

Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI-

TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no

representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life.

© 2008 Atmel Corporation. All rights reserved. Atmel®, logo and combinations thereof, DataFlash® and others, are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.

3597J–DFLASH–4/08

Rainbow Electronics AT45DB321D User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Features

1. Description

2. Pin Configurations and Pinouts

3. Block Diagram

4. Memory Array

5. Device Operation

6. Read Commands

6.1 Continuous Array Read (Legacy Command: E8H): Up to 66 MHz

6.2 Continuous Array Read (High Frequency Mode: 0BH): Up to 66 MHz

6.3 Continuous Array Read (Low Frequency Mode: 03H): Up to 33 MHz

6.4 Main Memory Page Read

6.5 Buffer Read

7. Program and Erase Commands

7.1 Buffer Write

7.2 Buffer to Main Memory Page Program with Built-in Erase

7.3 Buffer to Main Memory Page Program without Built-in Erase

7.4 Page Erase

7.5 Block Erase

7.6 Sector Erase

7.8 Main Memory Page Program Through Buffer

8. Sector Protection

8.1 Software Sector Protection

8.1.1 Enable Sector Protection Command

8.1.2 Disable Sector Protection Command

8.1.3 Various Aspects About Software Controlled Protection

9. Hardware Controlled Protection

9.1 Sector Protection Register

9.1.1 Erase Sector Protection Register Command

9.1.2 Program Sector Protection Register Command

9.1.3 Read Sector Protection Register Command

9.1.4 Various Aspects About the Sector Protection Register

10. Security Features

10.1 Sector Lockdown

10.1.1 Sector Lockdown Register

10.1.2 Reading the Sector Lockdown Register

10.2 Security Register

10.2.1 Programming the Security Register

10.2.2 Reading the Security Register

11. Additional Commands

11.1 Main Memory Page to Buffer Transfer

11.2 Main Memory Page to Buffer Compare

11.3 Auto Page Rewrite

11.4 Status Register Read

12. Deep Power-down

12.1 Resume from Deep Power-down

13. “Power of 2” Binary Page Size Option

13.1 Programming the Configuration Register

14. Manufacturer and Device ID Read

14.1 Manufacturer and Device ID Information

14.2 Operation Mode Summary

15. Command Tables

16. Power-on/Reset State

16.1 Initial Power-up/Reset Timing Restrictions

17. System Considerations

18. Electrical Specifications

19. Input Test Waveforms and Measurement Levels

20. Output Test Load

21. AC Waveforms

21.5 Utilizing the RapidS™ Function

21.6 Reset Timing

21.7 Command Sequence for Read/Write Operations for Page Size 512 Bytes (Except Status Register Read, Manufacturer and Device ID Read)

21.8 Command Sequence for Read/Write Operations for Page Size 528 Bytes (Except Status Register Read, Manufacturer and Device ID Read)

22. Write Operations

22.1 Buffer Write

22.2 Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)

23. Read Operations

23.1 Main Memory Page Read

23.2 Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)

23.3 Buffer Read

24.1 Continuous Array Read (Legacy Opcode E8H)

24.2 Continuous Array Read (Opcode 0BH)

24.3 Continuous Array Read (Low Frequency: Opcode 03H)

24.4 Main Memory Page Read (Opcode: D2H)

24.5 Buffer Read (Opcode D4H or D6H)

24.6 Buffer Read (Low Frequency: Opcode D1H or D3H)

24.7 Read Sector Protection Register (Opcode 32H)