Rainbow Electronics AT29BV040A User Manual

Features

Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time – 200 ns
Low Power Dissipation
– 15mAActiveCurrent – 40 µA CMOS Standby Current
Sector Program Operation
– Single Cycle Reprogram (Erase and Program) – 2048 Sectors (256 Bytes/Sector) – Internal Address and Data Latches for 256 Bytes
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time – 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Minimum Endurance 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges

Description

4-megabit (512K x 8) Single 2.7-volt
Battery-Voltage
Flash Memory
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times to 200 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 40 µA. The device

Pin Configurations

Pin Name Function
A0 - A18 Addresses
CE
OE
WE
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
1
A11
2
A9
3
A8
4
A13
5
A14
6
A17
7
WE
8
VCC
9
A18
10
A16
11
A15
12
A12
13
A7
14
A6
15
A5
16
A4
Chip Enable
Output Enable
Write Enable
TSOP Top View
Type 1
CBGA
Top Vi ew
234
1
A
B
OE
32
A10
31
CE
30
I/O7
29
I/O6
28
I/O5
27
I/O4
26
I/O3
25
GND
24
I/O2
23
I/O1
22
I/O0
21
A0
20
A1
19
A2
18
A3
17
C
D
E
F
G
H
A7 A6 A5 A4 A3 A2 A1 A0
A18 A16 A15 A12 I/O0 I/O1 I/O2
GND
A14 A17 WE
VCC
I/O3 I/O4 I/O5 I/O6
A13
A8
A9 A11 I/O7
CE A10
OE
AT29BV040A
Rev. 0383F–FLASH–05/02
1

Block Diagram

endurance is such that any sector can be written to in excess of 10,000 times. The pro­gramming algorithm is compatible with other devices in Atmels 2.7-volt-only Flash memories.
To allow for simple in-system reprogrammability, the AT29BV040A does not require high input voltages for programming. The device can be operated with a single 2.7V to
3.6V supply. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29BV040A is performed on a sector basis; 256 bytes of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA gram cycle has been detected, a new access for a read or program can begin.
polling of I/O7. Once the end of a pro-

Device Operation

2
AT29BV040A
READ: The AT29BV040A is accessed like an EPROM. When CE and OE are low and
WE
is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention.
SOFTWARE DATA PROTECTION PROGRAMMING: The AT29BV040 has 2048 indi­vidual sectors, each 256 bytes. Using the software data protection feature, byte loads are used to enter the 256 bytes of a sector to be programmed. The AT29BV040A can only be programmed or reprogrammed using the software data protection feature. The device is programmed on a sector basis. If a byte of data within the sector is to be changed, data for the entire 256-byte sector must be loaded into the device. The AT29BV040A automatically does a sector erase prior to loading the data into the sector. An erase command is not required.
Software data protection protects the device from inadvertent programming. A series of three program commands to specific addresses with specific data must be presented to the device before programming may occur. The same three program commands must begin each program operation. All software program commands must obey the sector program timing specifications. Power transitions will not reset the software data protec­tion feature, however the software feature will guard against inadvertent program cycles during power transitions.
0383F–FLASH–05/02
AT29BV040A
Any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of t
, a read operation will effectively be a polling operation.
WC
After the software data protections 3-byte command code is given, a byte load is per­formed by applying a low pulse on the WE and OE
high. The address is latched on the falling edge of CE or WE, whichever occurs
last. The data is latched by the first rising edge of CE
The 256 bytes of data must be loaded into each sector. Any byte that is not loaded dur­ing the programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the device, they are simultaneously programmed during the internal pro­gramming period. After the first data byte has been loaded into the device, successive bytes are entered in the same manner. Each new byte to be programmed must have its high-to-low transition on WE CE
) of the preceding byte. If a high-to-low transition is not detected within 150 µs of the
(or CE) within 150 µs of the low-to-high transition of WE (or
last low-to-high transition, the load period will end and the internal programming period will start. A8 to A18 specify the sector address. The sector address must be valid during each high-to-low transition of WE
(or CE). A0 to A7 specify the byte address within the
sector. The bytes may be loaded in any order; sequential loading is not required.
HARDWARE DATA PROTECTION: Hardware features protect against inadvertent programs to the AT29BV040A in the following ways: (a) V
1.8V (typical), the program function is inhibited; (b) V reached the V
sense level, the device will automatically time out 10 ms (typical)
CC
before programming; (c) Program inhibit – holding any one of OE high inhibits program cycles; and (d) Noise filter – pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a program cycle.
or CE input with CE or WE low (respectively)
or WE.
sense – if VCCis below
CC
power on delay – once VCChas
CC
low, CE high or WE
INPUT LEVELS: While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs (OE affecting the operation of the device. The I/O lines can only be driven from 0 to V
,CEand WE) may be driven from 0 to 5.5V without adversely
CC
0.6V.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. In addition, users may wish to use the software product identification mode to identify the part (i.e. using the device code), and have the system software use the appropriate sector size for program operations. In this manner, the user can have a common board design for 256K to 4-megabit densities and, with each densitys sector size in a memory map, have the system software apply the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identifi­cation. The manufacturer and device code is the same for both modes.
DATA
POLLING: The AT29BV040A features DATA polling to indicate the end of a
program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. DATA
polling
may begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA
polling the AT29BV040A provides another method for determining the end of a program or erase cycle. During a program or erase opera­tion, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling
+
0383F–FLASH–05/02
3
and valid data will be read. Examining the toggle bit may begin at any time during a pro­gram cycle.
OPTIONAL CHIP ERASE MODES: The entire device may be erased by using a 6-byte software code. Please see Software Chip Erase application note for details.
BOOT BLOCK PROGRAMMING LOCKOUT: The AT29BV040A has two designated memory blocks that have a programming lockout feature. This feature prevents pro­gramming of data in the designated block once the feature has been enabled. Each of these blocks consists of 16K bytes; the programming lockout feature can be set inde­pendently for either block. While the lockout feature does not have to be activated, it can be activated for either or both blocks.
These two 16K memory sections are referred to as bring up a system can be contained in a boot block. The AT29BV040A blocks are located in the first 16K bytes of memory and the last 16K bytes of memory. The boot block programming lockout feature can therefore support systems that boot from the lower addresses of memory or the higher addresses. Once the programming lockout feature has been activated, the data in that block can no longer be erased or pro­grammed; data in other memory locations can still be changed through the regular programming methods. To activate the lockout feature, a series of seven program com­mands to specific addresses with specific data must be performed. Please see Boot Block Lockout Feature Enable Algorithm.
If the boot block lockout feature has been activated on either block, the chip erase func­tion will be disabled.
BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine whether programming of either boot block section is locked out. See Software Product Identification Entry and Exit sections. When the device is in the software product identifi­cation mode, a read from location 00002H will show if programming the lower address boot block is locked out while reading location 7FFF2H will do so for the upper boot block. If the data is FE, the corresponding block can be programmed; if the data is FF, the program lockout feature has been activated and the corresponding block cannot be programmed. The software product identification exit mode should be used to return to standard operation.

Absolute Maximum Ratings*

Temperature Under Bias................................ -55°Cto+125°C
Storage Temperature ..................................... -65°Cto+150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+0.6V
boot blocks
*NOTICE: Stresses beyond those listed under Absolute
Maximum Ratingsmay cause permanent dam­age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
. Secure code which will
Voltage on A9 (including NC Pins)
with Respect to Ground ...................................-0.6V to +13.5V
4
AT29BV040A
0383F–FLASH–05/02

DC and AC Operating Range

AT29BV040A
AT29BV040A-20 AT29BV040A-25
Operating Temperature (Case)
V
Power Supply
CC
(1)
Com. 0°C-70°C0°C-70°C
Ind. -40°C-85°C-40°C-85°C
2.7V to 3.6V 2.7V to 3.6V
Note: 1. After power is applied and VCCis at the minimum specified data sheet value, the system should wait 20 ms before an oper-
ational mode is started.

Operating Modes

Mode CE OE WE Ai I/O
Read V
Program
(2)
Standby/Write Inhibit V
IL
V
IL
IH
Program Inhibit X X V
Program Inhibit X V
Output Disable X V
Product Identification
Hardware V
Software
Notes: 1. X can be V
(5)
or VIH.
IL
IL
2. Refer to AC Programming Waveforms.
3. V
= 12.0V ± 0.5V.
H
4. Manufacturer Code is 1F. The Device Code is C4.
5. See details under Software Product Identification Entry/Exit.
V
IL
V
IH
(1)
X
IL
IH
V
IL
V
IH
V
IL
Ai D
Ai D
OUT
IN
XXHighZ
IH
X
XHighZ
V
IH
A1 - A18 = VIL,A9=V
A1 - A18 = VIL,A9=V
A0 = V
A0 = V
A1 - A18 = V
IL,
A1 - A18 = V
IH,
(3)
,A0=VILManufacturer Code
H
(3)
,A0=VIHDevice Code
H
IL
IL
Manufacturer Code
Device Code
(4)
(4)
(4)
(4)

DC Characteristics

Symbol Parameter Condition Min Max Units
I
LI
I
LO
I
SB1
I
SB2
I
CC
V
IL
V
IH
V
OL
V
OH
0383F–FLASH–05/02
Input Load Current VIN=0VtoV
Output Leakage Current V
=0VtoV
I/O
VCCStandby Current CMOS CE =VCC-0.3VtoV
CC
CC
CC
Com. 40 µA
Ind. 50 µA
VCCStandby Current TTL CE =2.0VtoV
VCCActive Current f = 5 MHz; I
CC
=0mA;VCC=3.6V 15 mA
OUT
Input Low Voltage 0.6 V
Input High Voltage 2.0 V
Output Low Voltage IOL=1.6mA;VCC=3.0V 0.45 V
Output High Voltage IOH=-100µA;VCC=3.0V 2.4 V
A
A
1mA
5
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