Rainbow Electronics AT27BV512 User Manual

Features

•

Fast Read Access Time - 70 ns

•

Dual Voltage Range Operation

– Unregulated Battery Power Supply Range, 2.7V to 3.6V

or Standard 5V ± 10% Supply Range

•

Pin Compatible with JEDEC Standard AT27C512R

•

Low Power CMOS Operation

– 20 µA max. (less than 1 µA typical) Standby for VCC = 3.6V
– 29 mW max. Active at 5 MHz for VCC = 3.6V

•

JEDEC Standard Surface Mount Packages

– 32-Lead PLCC
– 28-Lead 330-mil SOIC
– 28-Lead TSOP

•

High Reliability CMOS Technology

– 2,000V ESD Protection
– 200 mA Latchup Immunity

•

Rapid™ Programming Algorithm - 100 µs/b y te (typic al)

•

CMOS and TTL Compatible Inputs and Outputs

– JEDEC Standard for LVTTL and LVBO

•

Integrated Product Identification Code

•

Commercial and Industrial Temperature Ranges

512K (64K x 8)
Unregulated

Battery-Voltage

™

High Speed OTP
EPROM

Description

The AT27BV512 is a high performance, low power, low voltage 524,288-bit one-time
programmable re ad only memory (OTP EP ROM) organized as 64 K by 8 bits. It
requires only one suppl y in t he ran ge of 2. 7V to 3. 6V in norma l rea d mode o perat ion,
making it ideal for fast, portable systems using either regulated or unregulated battery
power.

Pin Configurations

Pin Name Function

A0 - A15 Addresses
O0 - O7 Outputs
CE

/VPP

OE

NC No Connect

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

NC

13

O0

Note: PLCC package pins 1 and 17 are
DON’T CONNECT.

Chip Enable
Output Enable/

Program Supply

PLCC Top View

A7

A12

A15NCVCC

A14

A13

432

1

323130

29
28
27
26
25
24
23
22

NC

21

O3O4O5

14151617181920

O1

O2

GND

A8
A9
A11
NC
OE/VPP
A10
CE
O7
O6

OE/VPP

A11

A13
A14

VCC

A15
A12

SOIC Top View

A15
A12

GND

1
2
3

A7

4

A6

5

A5

6

A4

7

A3

8

A2

9

A1

10

A0

11

O0

12

O1

13

O2

14

28
27
26
25
24
23
22
21
20
19
18
17
16
15

TSOP Top View

Type 1

22
23
24

A9

25

A8

26
27
28
1
2
3

A7

4

A6

5

A5

6

A4

7

A3

(continued)

VCC
A14
A13
A8
A9
A11
OE/VPP
A10
CE
O7
O6
O5
O4
O3

21
20
19
18
17
16
15
14
13
12
11
10

A10
CE
O7
O6
O5
O4
O3
GND
O2
O1
O0
A0

9

A1

8

A2

AT27BV512

Rev. 0602B–10/98

1

Atmel’s innovative desi gn techniques provide fast sp eeds
that rival 5V parts while keepi ng the lo w power con sump­tion of a 3V supply. At V

= 2.7V, any byte can be

CC

accessed in less than 70 ns. With a typi cal power con­sumption of only 18 mW at 5 MHz and V

= 3V, the

CC

AT27BV512 consumes less than one fifth the power of a
standard 5V EPROM.

Standby mode supply current is typically less than 1 µA at
3V. The AT27BV512 simplifies system design an d
stretches battery lif etime even further by el iminating the
need for power supply regulation.

The AT27BV512 is available in industry standard JEDEC­approved one-time programmable (OTP) plastic PLCC,
SOIC, and TSOP pac kages. All devices featu re two-line
control (CE

, OE) to give designers the flexibility to prevent

bus contention.
The AT27BV512 op eratin g with V

at 3.0V produces TTL

CC

level outputs that are compatible with standard TTL logic
devices operati ng at V

= 5.0V. At VCC = 2.7V, the part is

CC

compatible with JEDEC approved low voltage battery oper­ation (LVBO) interface specifications. T he device is als o
capable of standard 5-volt operation making it ideally suited
for dual sup ply rang e system s or car d produc ts that are
pluggable in both 3-volt and 5-volt hosts.

Atmel’s AT27BV 512 h as a dditio nal f eatures to en sur e hig h
quality and efficient producti on use. The Rapi d™ Progra m-

ming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming
time is typically only 100 µs/byte. The Integrated Product
Identification Code electronically identifi es the device and
manufacturer. This feature is used by industry standard
programming eq uipme nt to sele ct the prop er program ming
algorithms and voltages. The AT27BV512 programs
exactly the same way as a standard 5V AT27C512R and
uses the same programming equipment.

System Considerations

Switching between active and standby conditions via the
Chip Enable pin may produ ce tra ns ien t vo ltag e ex cu rs i ons .
Unless accommodated by the system design, these tran­sients may exceed data sheet limits, resulting in device
non-conforman ce. At a mini mum, a 0.1 µF high frequency,
low inherent inductance, ceramic capacitor should be uti­lized for each device. This capacitor should be connected
between the V
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7 µF bulk electrolytic capacitor should
be utilized, again connected between the V
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.

and Ground terminals of the device, as

CC

and Ground

CC

Block Diagram

2

AT27BV512

Absolute Maximum Ratings*

Temperature Under Bias.................................. -40°C to +85°C

Storage Temperature..................................... -65°C to +125°C

Voltage on Any Pin with

Respect to Ground .........................................-2.0V to +7.0V

Voltage on A9 with

Respect to Ground ......................................-2.0V to +14.0V

AT27BV512

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam­age to the de vic e. T his is a stres s r ating o nly an d
functional opera tion of the device at these or an y

(1)

(1)

other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reli abi li ty

VPP Supply Voltage with

Respect to Ground .......................................-2.0V to +14.0V

(1)

Note: 1. Minimum voltage is -0.6V dc which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is

+ 0.75V dc which may be exceeded if certain precautions are observed (consult application notes) and which may

V

CC

overshoot to +7.0V for pulses of less than 20 ns.

Operating Modes

Mode \ Pin CE OE/V

(2)

Read
Output Disable
Standby
Rapid Program
PGM Verify
PGM Inhibit

(2)

(2)

(3)

(3)

(3)

Product Identification

Notes: 1 . X can be V

(3)(5)

IL

or VIH.

V

IL

V

IL

V

IH

V

IL

V

IL

V

IH

V

IL

2. Read, output disable, and standby modes require, 2.7 V ≤ V

3. Refer to Programming C haracteristics. Programming modes require VCC = 6.5V.

4. VH = 12.0 ± 0.5V.

5. Two identifier bytes may be selected. All Ai inputs are held low (V
) to select the Manufacturer’s Identification byte and high (VIH) to select the Device Code byte.

(V

IL

PP

V

IL

V

IH

XXV

V

PP

V

IL

V

PP

V

IL

≤ 3.6V, or 4.5V ≤ VCC ≤ 5.5V.

CC

Ai V

Ai V

(1)

X

Ai V
Ai V

XV

A9 = V

(4)

H

A0 = VIH or VIL

A1 - A15 = V

), except A9 which is set to VH and A0 which is toggle d low

IL

IL

CC

(2)

CC

(2)

V

CC

(2)

CC

(3)

CC

(3)

CC

(3)

CC

(3)

V

CC

Outputs

D

OUT

High Z
High Z
D

IN

D

OUT

High Z

Identification Code

3

DC and AC Operating Conditions for Read Operation

AT27BV512

-70 -90 -12 -15

Operating Temperature
(Case)

Com. 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C
Ind. -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C

2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V

Power Supply

V

CC

5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10%

DC and Operating Characteristics for Read Operation

Symbol Parameter Condition Min Max Units
V

= 2.7V to 3.6V

CC

I

LI

I

LO

(2)

I

PP1

I

SB

I

CC

V

IL

V

IH

V

OL

V

OH

= 4.5V to 5.5V

V

CC

I

LI

I

LO

(2)

I

PP1

I

SB

I

CC

V

IL

V

IH

V

OL

V

OH

Input Load Current VIN = 0V to V
Output Leakage Current V

(1)

V

Read/Standby Current VPP = V

PP

(1)

V

Standby Current

CC

OUT

I

(CMOS), CE = V

SB1

I

(TTL), CE = 2.0 to VCC + 0.5V 100

SB2

VCC Active Current f = 5 MHz, I

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

VCC = 3.0 to 3.6V -0.6 0.8 V
V

= 2.7 to 3.6V -0.6 0.2 x V

CC

= 3.0 to 3.6V 2.0 VCC + 0.5 V

V

CC

V

= 2.7 to 3.6V 0.7 x V

CC

= 2.0 mA 0.4 V

I

OL

I

= 100 µA0.2V

OL

I

= 20 µA0.1V

OL

= -2.0 mA 2.4 V

I

OH

I

= -100 µAV

OH

I

= -20 µAV

OH

Input Load Current VIN = 0V to V
Output Leakage Current V

(1)

V

Read/Standby Current VPP = V

PP

(1)

V

Standby Current

CC

OUT

(CMOS), CE = VCC ± 0.3V 100

I

SB1

I

(TTL), CE = 2.0 to VCC + 0.5V 1 mA

SB2

VCC Active Current f = 5 MHz, I

= 0V to V

CC

OUT

= 0V to V

CC

OUT

CC

CC

0.3V 20

CC

±

= 0 mA, CE = VIL, VCC = 3.6V 8 mA

CC

- 0.2 V

CC

- 0.1 V

CC

CC

CC

= 0 mA, CE = V

IL

Input Low Voltage -0.6 0.8 V
Input High Voltage 2.0 VCC + 0.5 V
Output Low Voltage IOL = 2.1 mA 0.4 V
Output High Voltage IOH = -400 µA2.4V

Notes: 1. VCC must be applied simultaneously with or before OE/VPP, and removed simultaneously with or after OE/VPP.

may be connected directly to VCC, except during programming. The supply current would then be the sum of ICC and IPP.

2. V

PP

±

1

±

5

10

CC

VCC + 0.5 V

±

1

±

5

10

20 mA

µ

A

µ

A

µ

A

µ

A

µ

A

V

µ

A

µ

A

µ

A

µ

A

4

AT27BV512