Rainbow Electronics AT24C1024B User Manual

Features

Low-voltage Operation
–1.8V (VCC = 1.8V to 3.6V) –2.5V (V
Internally Organized 131,072 x 8
Two-wire Serial Interface
Bidirectional Data Transfer Protocol
400 kHz (1.8V) and 1 MHz (5V, 2.5V) Clock Rate
Write Protect Pin for Hardware and Software Data Protection
256-byte Page Write Mode (Partial Page Writes Allowed)
Random and Sequential Read Modes
Self-timed Write Cycle (5 ms Typical)
High Reliability
– Endurance: 1,000,000 Write Cycles/Page – Data Retention: 40 Years
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP, 8-lead Ultra Thin
Small Array (SAP), and 8-ball dBGA2 Packages
Die Sales: Wafer Form, Tape and Reel and Bumped Die
= 2.5V to 5.5V)
CC
Two-wire Serial EEPROM
1M (131,072 x 8)
AT24C1024B

Description

The AT24C1024B provides 1,048,576 bits of serial electrically erasable and program­mable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device’s cascadable feature allows up to four devices to share a common two-wire bus. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The devices are available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP, 8-ball dBGA2 and 8-lead Ultra Thin SAP packages. In addition, the entire family is available in 1.8V (1.8V to 3.6V) and 2.5V (2.5V to 5.5V) versions.
Table 1. Pin Configurations
Pin Name Function
A1 Address Input
A2 Address Input
SDA Serial Data
SCL Serial Clock Input
WP Write Protect
NC No Connect
8-lead SOIC
1
NC
A1 A2
GND
VCC
WP
SCL
SDA
2 3 4
8-lead dBGA2
8
7
6
5
8 7 6 5
1
NC
2
A1
3
A2
4
GND
VCC WP SCL SDA
8-lead PDIP
NC
A1 A2
GND
1 2 3 4
8 7 6 5
8-lead TSSOP
NC
A1 A2
GND
1
2
3
4
8
7
6
5
8-lead Ultra-Thin SAP
8
1
VCC
WP
SCL
SDA
7
6
5
NC
2
A1
3
A2
4
GND
Bottom View
VCC WP SCL SDA
VCC WP SCL SDA
with Two Device Address Inputs
Preliminary
Rev. 5194D–SEEPR–5/07
Bottom View
1

Absolute Maximum Ratings*

Operating Temperature..................................–55°C to +125°C
Storage Temperature .....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground ....................................–1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam­age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
2
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
AT24C1024B [Preliminary]

Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each

EEPROM device and negative edge clock data out of each device. SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is open-
drain driven and may be wire-ORed with any number of other open-drain or open-collector devices.
DEVICE/ADDRESSES (A1/A2): The A1, A2 pin is a device address input that can be hard­wired or left not connected for hardware compatibility with other AT24Cxx devices. When the A1, A2 pins are hardwired, as many as four 1024K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). If the A1/A2 pins are left floating, the A1/A2 pin will be internally pulled down to GND if the capaci­tive coupling to the circuit board V connecting the A1/A2 pin to GND.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write operations. When WP is connected high to V inhibited. If the pin is left floating, the WP pin will be internally pulled down to GND if the capacitive coupling to the circuit board V mends connecting the pin to GND. Switching WP to V software write-protect function.
plane is <3 pF. If coupling is >3 pF, Atmel recommends
CC
, all write operations to the memory are
CC
plane is <3 pF. If coupling is >3 pF, Atmel recom-
CC
prior to a write operation creates a
CC

Memory Organization

AT24C1024B, 1024K SERIAL EEPROM: The 1024K is internally organized as 512 pages of
256 bytes each. Random word addressing requires a 17-bit data word address.
5194D–SEEPR–5/07
3
Table 2. Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Symbol Test Condition Max Units Conditions
C
I/O
C
IN
Input/Output Capacitance (SDA) 8 pF V
I/O
= 0V
Input Capacitance (A1, SCL) 6 pF VIN = 0V
Note: 1. This parameter is characterized and is not 100% tested.
Table 3. DC Characteristics Applicable over recommended operating range from: T
Symbol Parameter Test Condition Min Typ Max Units
V
CC1
V
CC2
I
CC
I
CC
I
SB1
I
SB2
I
LI
I
LO
V
IL
V
IH
V
OL1
V
OL2
Note: 1. VIL min and VIH max are reference only and are not tested.
Supply Voltage 1.8 3.6 V
Supply Voltage 2.5 5.5 V
Supply Current VCC = 5.0V READ at 400 kHz 2.0 mA
Supply Current VCC = 5.0V WRITE at 400 kHz 3.0 mA
VCC = 1.8V VIN = VCC or V
Standby Current
= 3.6V 3.0 µA
V
CC
V
= 2.5V VIN = VCC or V
Standby Current
Input Leakage Current VIN = V
Output Leakage
CC
V
= 5.5V 6.0 µA
CC
CC or VSS
V
= V
OUT
CC or VSS
Current
Input Low Level
Input High Level
(1)
(1)
Output Low Level VCC = 1.8V IOL = 0.15 mA 0.2 V
Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V
= –40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
AI
SS
SS
1.0 µA
2.0 µA
0.10 3.0 µA
0.05 3.0 µA
–0.6 VCC x 0.3 V
VCC x 0.7 VCC + 0.5 V
4
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
Table 4. AC Characteristics (Industrial Temperature) Applicable over recommended operating range from T
erwise noted). Test conditions are listed in Note 2.
Symbol Parameter
AT24C1024B [Preliminary]
= 40°C to +85°C, VCC = +1.8V to +3.6V, CL = 100 pF (unless oth-
AI
1.8-volt 2.5, 5.0-volt
UnitsMin Max Min Max
f
SCL
t
LOW
t
HIGH
t
i
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WR
Endurance
Clock Frequency, SCL 400 1000 kHz
Clock Pulse Width Low 1.3 0.4 µs
Clock Pulse Width High 0.6 0.4 µs
Noise Suppression Time
(1)
100 50 ns
Clock Low to Data Out Valid 0.05 0.9 0.05 0.55 µs
Time the bus must be free before a new transmission can start
(1)
1.3 0.5 µs
Start Hold Time 0.6 0.25 µs
Start Set-up Time 0.6 0.25 µs
Data In Hold Time 0 0 µs
Data In Set-up Time 100 100 ns
Inputs Rise Time
Inputs Fall Time
(1)
(1)
0.3 0.3 µs
300 100 ns
Stop Set-up Time 0.6 0.25 µs
Data Out Hold Time 50 50 ns
Write Cycle Time 5 5 ms
(1)
25°C, Page Mode, 3.3V 1,000,000
Write
Cycles
Notes: 1. This parameter is ensured by characterization only.
2. AC measurement conditions: RL (connects to VCC): 1.3 k (2.5V, 5V), 10 k (1.8V) Input pulse voltages: 0.3 V
to 0.7 V
CC
CC
Input rise and fall times: 50 ns Input and output timing reference voltages: 0.5 V
CC
5194D–SEEPR–5/07
5

Device Operation

CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on page 7). Data changes during SCL high periods will indicate a start or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see Figure 5 on page 7).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the Stop command will place the EEPROM in a standby power mode (see Figure 5 on page 7).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to acknowl­edge that it has received each word.
STANDBY MODE: The AT24C1024B features a low-power standby mode which is enabled: a) upon power-up and b) after the receipt of the stop bit and the completion of any internal operations.
SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be protocol reset by following these steps: (a) Create a start bit condition, (b) clock 9 cycles, (c) create another start bit followed by stop bit condition as shown below. The device is ready for next communication after above steps have been completed.
Start Bit Start Bit Stop Bit
Dummy Clock Cycles
SCL
SDA
123 89
Figure 2. Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O
®
)
6
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
Figure 3. Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O)
S
S
CL
AT24C1024B [Preliminary]
DA
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
8th BIT
WORDn
ACK
STOP
CONDITION
(1)
t
wr
START
CONDITION
Figure 4. Data Validity
Figure 5. Start and Stop Definition
7
5194D–SEEPR–5/07
Figure 6. Output Acknowledge

Device Addressing

Write Operations

The 1024K EEPROM requires an 8-bit device address word following a start condition to enable the chip for a read or write operation (see Figure 7 on page 11). The device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. This is common to all two-wire EEPROM devices.
The 1024K uses the two device address bit, A1, A2, to allow up to four devices on the same bus. These A1, A2 bits must compare to the corresponding hardwired input pins. The A1, A2 pin uses an internal proprietary circuit that biases it to a logic low condition if the pin is allowed to float.
The seventh bit (P address bit is the most significant bit of the data word address that follows. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the device will return to a standby state.
DATA SECURITY: The AT24C1024B has a hardware data protection scheme that allows the user to write-protect the entire memory when the WP pin is at V
BYTE WRITE: To select a data word in the 1024K memory requires a 17-bit word address. The word address field consists of the P word address followed by the least significant word address (see Figure 8 on page 11)
A write operation requires the P address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero. The addressing device, such as a microcontroller, then must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, T this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on page 11).
) of the device address is a memory page address bit. This memory page
0
.
CC
bit of the device address, then the most significant
0
bit and two 8-bit data word addresses following the device
0
, to the nonvolatile memory. All inputs are disabled during
WR
8
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
AT24C1024B [Preliminary]
PAGE WRITE: The 1024K EEPROM is capable of 256-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to 255 more data words. The EEPROM will respond with a zero after each data word received. The microcontroller must ter­minate the page write sequence with a stop condition (see Figure 9 on page 11).
The data word address lower 8 bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 256 data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten. The address “rollover” during write is from the last byte of the current page to the first byte of the same page.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero, allowing the read or write sequence to continue.
5194D–SEEPR–5/07
9

Read Operations

Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “rollover” during read is from the last byte of the last memory page, to the first byte of the first page.
Once the device address with the read/write select bit set to one is clocked in and acknowl­edged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input zero but does generate a following stop condi­tion (see Figure 10 on page 11).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a zero but does generate a fol­lowing stop condition (see Figure 11 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran­dom address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will con­tinue. The sequential read operation is terminated when the microcontroller does not respond with a zero, but does generate a following stop condition (see Figure 12 on page 12).
10
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
Figure 7. Device Address
Figure 8. Byte Write
AT24C1024B [Preliminary]
A
2
0
Figure 9. Page Write
P
Figure 10. Current Address Read
MOST
SIGNIFICANT
P
0
MOST
SIGNIFICANT
0
LEAST
SIGNIFICANT
LEAST
SIGNIFICANT
5194D–SEEPR–5/07
11
Figure 11. Random Read
Figure 12. Sequential Read
High Byte ADDRESS
P
0
P
0
High Byte
ADDRESS
Low Byte ADDRESS
Low Byte
ADDRESS
Data n + 1 Data n + 2 Data n + X
12
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
AT24C1024B [Preliminary]
Ordering Information
Ordering Code Voltage Package Operation Range
AT24C1024B-PU (Bulk form only) 1.8 8P3 AT24C1024B-PU25 (Bulk form only) 2.5 8P3
(1)
AT24C1024BN-SH-B AT24C1024BN-SH-T AT24C1024BN-SH25-B AT24C1024BN-SH25-T AT24C1024BW-SH-B AT24C1024BW-SH-T AT24C1024BW-SH25-B AT24C1024BW-SH25-T AT24C1024B-TH-B AT24C1024B-TH-T AT24C1024B-TH25-B AT24C1024B-TH25-T AT24C1024BY7-YH-T AT24C1024BY7-YH25-T AT24C1024BU4-UU-T AT24C1024B-W-11
(NiPdAu Lead Finish) 1.8 8S1
(2)
(NiPdAu Lead Finish) 1.8 8S1
(1)
(NiPdAu Lead Finish) 2.5 8S1
(2)
(NiPdAu Lead Finish) 2.5 8S1
(1)
(NiPdAu Lead Finish) 1.8 8S2
(2)
(NiPdAu Lead Finish) 1.8 8S2
(1)
(NiPdAu Lead Finish) 2.5 8S2
(2)
(NiPdAu Lead Finish) 2.5 8S2
(1)
(NiPdAu Lead Finish) 1.8 8A2
(2)
(NiPdAu Lead Finish) 1.8 8A2
(1)
(NiPdAu Lead Finish) 2.5 8A2
(2)
(NiPdAu Lead Finish) 2.5 8A2
(2)
(NiPdAu Lead Finish) 1.8 8Y7
(2)
(NiPdAu Lead Finish) 2.5 8Y7
(2)
(NiPdAu Lead Finish) 1.8 8U4-1
(3)
1.8 Die Sale Industrial Temperature
Lead-free/Halogen-free/
Industrial Temperature
(–40°C to 85°C)
(–40°C to 85°C)
Notes: 1. “-B” denotes bulk
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP and dBGA2 = 5K per reel. SAP = 3K per reel. EIAJ = 2K per reel.
3. Available in tape and reel and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request.
Please contact Serial Interface Marketing.
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual In-line Package (PDIP)
8S1 8-lead, 0.150” Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8S2 8-lead, 0.200” Wide Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y7 8-lead, 6.00 mm x 4.90 mm Body, Ultra Thin, Dual Footprint, Non-leaded, Small Array Package (SAP)
8U4-1 8-ball, die Ball Grid Array Package (dBGA2)
Options
–1.8 Low-voltage (1.8V to 3.6V)
–2.5 Low-voltage (2.5V to 5.5V)
5194D–SEEPR–5/07
13

Packaging Information

8P3 – PDIP
D1
b3
4 PLCS
Top View
D
e
Side View
1
E
E1
N
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
b
b2
A2 A
SYMBOL
A
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
L
D1 0.005
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
MIN
NOM
MAX
0.210 2
3
NOTE
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
14
TITLE
2325 Orchard Parkway
R
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual In-line Package (PDIP)
AT24C1024B [Preliminary]
DRAWING NO.
8P3
01/09/02
REV.
B
5194D–SEEPR–5/07

8S1 - JEDEC SOIC

Ø
E
1
N
TOP VIEW
C
E1
A
b
L
A1
e
D
SIDE VIEW
AT24C1024B [Preliminary]
C
1
E
N
Ø
TOP VIEW
e
b
D
SIDE VIEW
A
A1
SYMBOL
A 1.35 1.75 A1 0.10 0.25
b 0.31 0.51 C 0.17 0.25 D 4.80 5.05 E1 3.81 3.99 E 5.79 6.20 e 1.27 BSC L 0.40 1.27
θ
END VIEW
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
E1
L
NOM
MAX
NOTE
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906
R
5194D–SEEPR–5/07
TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1 C
3/17/05
REV.
15
8S2 – EIAJ SOIC
q
1
N
E
TOP VIEW
C
E1
END VIEW
A
b
L
A1
e
D
SIDE VIEW
C
1
E
N
TOP VIEW
e
b
A
A1
D
SIDE VIEW
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
END VIEW
SYMBOL
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 5
C 0.15 0.35 5
D 5.13 5.35
E1 5.18 5.40 2, 3
E 7.70 8.26
L 0.51 0.85
q
e 1.27 BSC 4
q
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
E1
L
NOM
MAX
NOTE
4/7/06
16
TITLE
2325 Orchard Parkway
R
San Jose, CA 95131
8S2, 8-lead, 0.209" Body, Plastic Small Outline Package (EIAJ)
AT24C1024B [Preliminary]
DRAWING NO.
8S2
5194D–SEEPR–5/07
REV.
D

8A2 - TSSOP

Pin 1 indicator
this corner
AT24C1024B [Preliminary]
123
N
Top View
b
e
D
Side View
A2
E1
E
L1
L
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
D 2.90 3.00 3.10 2, 5 E 6.40 BSC E1 4.30 4.40 4.50 3, 5
A 1.20 A2 0.80 1.00 1.05 b 0.19 0.304 e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
MIN
NOM
MAX
NOTE
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
5194D–SEEPR–5/07
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions s (0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Dat
um Plane H.
TITLE
2325 Orchard Parkway
R
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
hall not exceed 0.25 mm
DRAWING NO.
8A2
5/30/02
REV.
B
17

8U4-1 - dBGA2

A1 BALL PAD CORNER
D
5. b
E
A1
TOP VIEW
A1 BALL PAD CORNER
1
2
A
B
e
C
D
(e1)
SIDE VIEW
A2
A
d
(d1)
BOTTOM VIEW
8 SOLDER BALLS
5. Dimension 'b' is measured at the maximum solder ball diameter.
This drawing is for general information only.
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
TITLE
8U4-1, 8-ball, 2.47 x 4.07 mm Body, 0.75 mm pitch, Small Die Ball Grid Array Package (dBGA2)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
NOM
A 0.81 0.91 1.00 A
1 0.15 0.20 0.25
A
2 0.40 0.45 0.50
b 0.25 0.30 0.35 D 2.47 BSC E 4.07 BSC
e 0.75 BSC e1 0.74 REF
d 0.75 BSC
d1 0.80 REF
DRAWING NO.
PO8U4-1 A
MAX
NOTE
1/5/05
REV.
18
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
8Y7 – SAP
AT24C1024B [Preliminary]
PIN 1 INDEX AREA
D
A
PIN 1 ID
D1
E1
L
E
A1
b
e
e1
A
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 0.60 A1 0.00 0.05 D 5.80 6.00 6.20 E 4.70 4.90 5.10 D1 3.30 3.40 3.50 E1 3.90 4.00 4.10 b 0.35 0.40 0.45 e 1.27 TYP e1 3.81 REF L 0.50 0.60 0.70
MIN
NOM
MAX
NOTE
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
5194D–SEEPR–5/07
TITLE
8Y7, 8-lead (6.00 x 4.90 mm Body) Ultra-Thin SOIC Array
Package (UTSAP) Y7
DRAWING NO.
8Y7
10/13/05
REV.
B
19

Revision History

Doc. No. Date Comments
5194D 5/2007 Changed ‘Advance Information’ to ‘Preliminary’
5194C 4/2007 Reduced Pin Configuration sizes
Changed Maximum Operating Voltage from 6.0 to 6.25 Removed Device Power Up & Power Down Recommendation Added A2 bit to Device Addressing Removed LSB from Figure 10 Current Address Read Removed reference to Waffle Pack Modified Ordering Code table lines Global change on Voltage from 3.6 to 5.5, Correct pg 1 drawings to
include address inputs
5194B 2/2007 Correct pg 1 TSSOP drawing
5194A 1/2007 Initial Document Release
20
AT24C1024B [Preliminary]
5194D–SEEPR–5/07
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5194D–SEEPR–5/07
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