■ 0.35um four-layer metal non-volatile CMOS process for
smallest die sizes
High Speed Embedded SRAM
■ Up to 22 dual-port RAM modules, organized in user-
configurable 1,152-bit blocks
■ 5ns access times, each port independently accessible
■ Fast and efficient for FIFO, RAM, and ROM functions
Easy to Use / Fast Development Cycles
■ 100% routable with 100% utilization and complete
pin-out stability
■ Variable-grain logic cells provide high performance and
100% utilization
■ Comprehensive design tools include high quality Verilog/
VHDL synthesis
Advanced I/O Capabilities
■ Interfaces with both 3.3 volt and 5.0 volt devices
■ PCI compliant with 3.3V and 5.0V buses for -1/-2
speed grades
■ Full JTAG boundary scan
■ Registered I/O cells with individually controlled clocks
and output enables
Total of 316 I/O pins
■ 308 bi-directional input/output pins, PCI-compliant for
5.0 volt and 3.3 volt buses for -1/-2/-3/-4 speed grades
■ 8 high-drive input/distributed network pins
Eight Low-Skew Distributed Networks
■ Two array clock/control networks available to the logic
cell flip-flop clock, set and reset inputs - each driven by
an input-only pin
■ Six global clock/control networks available to the logic
cell F1, clock, set and reset inputs and the input and I/O
register clock, reset and enable inputs as well as the
output enable control - each driven by an input-only or
I/O pin, or any logic cell output or I/O cell feedback
High Performance
■ Input + logic cell + output total delays under 6 ns
■ Data path speeds exceeding 400 MHz
■ Counter speeds over 300 MHz
■ FIFO speeds over 160+ MHz
Military Reliability
■ Mil-STD-883 and Miil Temp Ceramic
■ Mil Temp Plastic - Guaranteed -55°C to 125°C
Device
QL4016
11,520 RAM Bits
QL4036
16,128 RAM bits
QL4090
25,344 RAM bits
M = Military T e mperatu re (-1 5 to +125 degrees C)
/888 = MIL STD 883
Usable
Gates
8,000-
16,000
16,000-
25,000
36,00060,000
Package
84CPGA
84PLCC
100CQFP
144CPGA
208PQFP
208CQFP
208PQFP
208CQFP
240PQFP
256CPGA
456PBGA
TABLE 1: Selector Table
Rev A
Max
I/O
70
70
82
118
174
174
174
174
207
223
316
Qualificatio n
Level
M, /883
M
M, /883
M, /883
M
M, /883
M
M, /883
M
M, /883
M
Supply
Voltage
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3V
3.3V
3.3V
3.3V
3.3V
8-37
P
Product Summary
Military QuickRAM
RODUCT SUMMARY
The QuickRAM family of ESPs (Embedded Standard
Products) offers FPGA logic in combination with
Dual-Port SRAM modules. QuickRAM is a 90,000
usable PLD gate ESPs. QuickRAM ESPs are fabricated on a 0.35mm four-layer metal process using
QuickLogic’s patented ViaLink technology to provide
a unique combination of high performance, high
density, low cost, and extreme ease-of-use.
QuickRAM contains up to 1,584 logic cells and 22
dual port RAM modules. Each RAM module has
1,152 RAM bits, for a total of up to 25,344 bits.
RAM Modules are Dual Port (one read port, one
write port) and can be configured into one of four
modes: 64 (deep) x18 (wide), 128x9, 256x4, or
512x2. With a maximum of 316 I/Os, and is avail-
Pinout Diagram 84-Pin PLCC
P
INOUT DIAGRAM
able in plastic 84-PLCC, 208-PQFP, 240-PQFP and
456-PBGA packages and in ceramic 100, 208CQFP and 84, 144, 256-CPGA.
Software support for the complete QuickRAM family
is available through two basic packages. The turnkey
QuickWorks
ESP software solution from design entry to logic synthesis, to place and route, to simulation. The Quick-
TM
Tools
for designers who use Cadence, Exemplar, Mentor,
Synopsys, Synplicity, Viewlogic, Veribest, or other
third-party tools for design entry, synthesis, or simulation.
TMSTest Mode Select for JTAG
TCKTest Clock for JTAG
TDO/RCOTest data out for JTAG /
RAM init. clock out
STMSpecial Test Mode
I/ACLKHigh-drive input and/or
Hold HIGH during normal operation. Connec ts to serial
PROM data in for RAM initialization. Connect to VCC if
unused.
Hold LOW during normal operation. Connects to serial
PROM reset for RAM initializati on. Connect to GND if
unused.
Hold HIGH during normal operation. Connect to VCC if
not used for JTAG.
Hold HIGH or LOW during norm a l operat i on. Connect to
VCC or ground if not used for JTAG .
Connect to serial PROM clock for RAM initialization. Must
be left unconnected if not used for JTAG or RAM
initialization.
Must be grounded during normal operation.
Can be configured as either or both.
array network driver
I/GCLKHigh-drive input and/or
Can be configured as either or both.
global network driver
IHigh-drive input
I/OInput/Output pin
VCCPower supply pin
VCCIOInput voltage tolerance pin
GNDGround pin
GND/THERMGround/Thermal pin
Use for input signals with high f anout.
Can be configured as an input and/or output.
Connect to 3.3V supply.
Connect to 5.0 volt supply if 5 volt input tolerance is
required, otherwise connect to 3.3V supply.
Connect to ground.
Available on 456-PBGA only. Connect to ground plane on
PCB if heat sinking des i red. Otherwise may be left
unconnected.
VIHInput HIGH Voltage0.5VCC VCCIO+0.5 V
VILInput LOW Voltage-0.50.3VCCV
VOHOutput HIGH VoltageIOH = -12 mA2.4V
IOH = -500 µA
VOLOutput LOW VoltageIOL = 8 mA [1]0.45V
IOL = 1.5 mA0.1VCCV
III or I/O Input Leakage CurrentVI = VCCIO or GND-1010
IOZ3-State Output Leakage Current VI = VCCIO or GND-1010
CIInput Capacitance [2]10pF
IOSOutput Short Circuit Current [3]VO = GND-15-180mA
VO = VCC40210mA
ICCD.C. Supply Current [4]VI, VIO = VCCIO or GND 0.50 (typ)5mA
ICCIOD.C. Supply Current on VCCIO0100
0.9VCCV
°C
°C
°C
µA
µA
µA
Notes:
[1] Military devices have 8 mA IOL specifications.
[2] Capacitance is sample tested only. Clock pins are 12 pF maximum.
[3] Only one output at a time. Duration should not exceed 30 seconds.
[4] Maximum ICC is 5 mA for all military grade devices. For AC conditions, contact QuickLogic
customer engineering.
8-50
50Preliminary
Rev A
Military QuickRAM
QL4016
QL4016
AC CHARACTERISTICS at VCC = 3.3V, TA = 25°C (K = 1.00)
(To calculate delays, multiply the appropriate K factor in the "Operating Range" section by the following numbers.)
Logic Cells
Propagation Delays (ns)
SymbolParameter
12348
tPDCombinatorial Delay [7]1.41.71.92.23.2
tSUSetup Time [7]1.71.71.71.71.7
tHHold Time0.00.00.00.00.0
tCLKClock to Q Delay0.71.01.21.52.5
tCWHIClock High Time1.21.21.21.21.2
tCWLOClock Low Time1.21.21.21.21.2
tSETSet Delay1.01.31.51.82.8
tRESETReset Delay0.81.11.31.62.6
tSWSet Width1.91.91.91.91.9
tRWReset Width1.81.81.81.81.8
TlEHInput Register Clock Enable Hold Time0.00.00.00.00.00.00.0
Notes:
[6] Stated timing for worst case Propagation Delay over process variation at VCC=3.3V and TA=25°C.
Multiply by the appropriate Delay Factor, K, for speed grade, voltage and temperature settings as specified in the Operating Range.
[7] These limits are derived from a representative selection of the slowest paths th r ough the QuickRAM
logic cell including typical net delays. Worst case delay values for specific paths should be determined
from timing analysis of your particular design.
TISUInput Register Set-Up Time
TIHInput Register Hol d Time
TlOCLKInput Register Clock To Q
TlORSTInput Regis t er Reset Delay
TlESUInput Register clock Enable Set-Up Time
TlEHInput Register Clock Enable Hold Time
Loads per Half Column [8]
123481011
Propagation Delays (ns)
Fanout [6]
1234810
1.31.61.82 .13.13.6
3.13.13.13 .13.13.1
0.00.00.00 .00.00.0
0.71.01.21 .52.53.0
0.60.91.11 .42.42.9
2.32.32.32 .32.32.3
0.00.00.00 .00.00.0
I/O Cell Output Delays
Propagation Delays (ns)
SymbolParameter
TOUTLHOutput Delay Low to High
TOUTHLOutput Delay High to Low
TPZHOutput Delay Tri-state to High
TPZLOutput Delay Tri-state to Low
TPHZOutput Delay High to Tri-State [9]
TPLZOutput Delay Low to Tri-State [9]
Notes:
[6] Stated timing for worst case Propagation Delay over process variation at VCC=3.3V and TA=25°C.
Multiply by the appropriate Delay Factor, K, for speed grade, voltage and temperature settings as
specified in the Operating Range.
[8] The array distributed networks consist o f 40 h alf colu mns an d the global distri buted net works consis t of
44 half columns, each driven by an independent buffer. The number of half columns used does not
affect clock buffer del ay. The array clock has up to 8 loads per half column . The global clo ck has up to
11 loads per half column.
[9] The following loads are used for tPXZ:
tPHZ
1K
Ω
5 pF
Output Load Capacitance (pF)
305075100150
2.12.53.13.64.7
2.22.63.23.74.8
1.21.72.22.83.9
1.62.02.63.14.2
2.0
1.2
Ω
1K
tPLZ
5 pF
8-52
52Preliminary
Rev A
Military QuickRAM
QL4036
QL4036
AC CHARACTERISTICS at VCC = 3.3V, TA = 25°C (K = 1.00)
(To calculate delays, multiply the appropriate K factor in the "Operating Range" section by the following numbers.)
Logic Cells
Propagation Delays (ns)
SymbolParameter
12348
tPDCombinatorial Delay [6]1.41.71.92.23.2
tSUSetup Time [6]1.71.71.71.71.7
tHHold Time0.00.00.00.00.0
tCLKClock to Q Delay0.71.01.21.52.5
tCWHIClock High Time1.21.21.21.21.2
tCWLOClock Low Time1.21.21.21.21.2
tSETSet Delay1.01.31.51.82.8
tRESETReset Delay0.81.11.31.62.6
tSWSet Width1.91.91.91.91.9
tRWReset Width1.81.81.81.81.8
TISUInput Register Set-Up Time
TIHInput Register Hol d Time
TlOCLKInput Register Clock To Q
TlORSTInput Regis t er Reset Delay
TlESUInput Register clock Enable Set-Up Time
TlEHInput Register Clock Enable Hold Time
Loads per Half Column [7]
Propagation Delays (ns)
Fanout [5]
1234810
1.31.61.82 .13.13.6
3.13.13.13 .13.13.1
0.00.00.00 .00.00.0
0.71.01.21 .52.53.0
0.60.91.11 .42.42.9
2.32.32.32 .32.32.3
0.00.00.00 .00.00.0
I/O Cell Output Delays
Propagation Delays (ns)
SymbolParameter
TOUTLHOutput Delay Low to High
TOUTHLOutput Delay High to Low
TPZHOutput Delay Tri-state to High
TPZLOutput Delay Tri-state to Low
TPHZOutput Delay High to Tri-State [8]
TPLZOutput Delay Low to Tri-State [8]
Notes:
[5] Stated timing for worst case Propagation Delay over process variation at VCC=3.3V and TA=25°C.
Multiply by the appropriate Delay Factor, K, for speed grade, voltage and temperature settings as
specified in the Operating Range.
[7] The array distributed networks consist of 56 half columns and the global di stribute d networks cons ist of
60 half columns, each driven by an independent buffer. The number of half columns used does not
affect clock buffer delay. The array clock has up to 12 loads per half column. The global clock has up
to 15 loads per half column.
[8] The following loads are used for tPXZ:
tPHZ
1K
Ω
5 pF
Output Load Capacitance (pF)
305075100150
2.12.53.13.64.7
2.22.63.23.74.8
1.21.72.22.83.9
1.62.02.63.14.2
2.0
1.2
Ω
1K
tPLZ
5 pF
8-54
54Preliminary
Rev A
Military QuickRAM
QL4090
QL4090
AC CHARACTERISTICS at VCC = 3.3V, TA = 25°C (K = 1.00)
(To calculate delays, multiply the appropriate K factor in the "Operating Range" section by the following numbers.)
Logic Cells
Propagation Delays (ns)
SymbolParameter
12348
tPDCombinatorial Delay [6]1.41.71.92.23.2
tSUSetup Time [6]1.71.71.71.71.7
tHHold Time0.00.00.00.00.0
tCLKClock to Q Delay0.71.01.21.52.5
tCWHIClock High Time1.21.21.21.21.2
tCWLOClock Low Time1.21.21.21.21.2
tSETSet Delay1.01.31.51.82.8
tRESETReset Delay0.81.11.31.62.6
tSWSet Width1.91.91.91.91.9
tRWReset Width1.81.81.81.81.8
TISUInput Register Set-Up Time
TIHInput Register Hol d Time
TlOCLKInput Register Clock To Q
TlORSTInput Regis t er Reset Delay
TlESUInput Register clock Enable Set-Up Time
TlEHInput Register Clock Enable Hold Time
Loads per Half Column [7]
Propagation Delays (ns)
Fanout [5]
1234810
1.31.61.82 .13.13.6
3.13.13.13 .13.13.1
0.00.00.00 .00.00.0
0.71.01.21 .52.53.0
0.60.91.11 .42.42.9
2.32.32.32 .32.32.3
0.00.00.00 .00.00.0
I/O Cell Output Delays
Propagation Delays (ns)
SymbolParameter
TOUTLHOutput Delay Low to High
TOUTHLOutput Delay High to Low
TPZHOutput Delay Tri-state to High
TPZLOutput Delay Tri-state to Low
TPHZOutput Delay High to Tri-State [8]
TPLZOutput Delay Low to Tri-State [8]
Notes:
[5] Stated timing for worst case Propagation Delay over process variation at VCC=3.3V and TA=25°C.
Multiply by the appropriate Delay Factor, K, for speed grade, voltage and temperature settings as specified in the Operating Range.
[7] The array distributed networks consist of 88 half columns and the global dis tributed n etworks consi st of
92 half columns, each driven by an independent buffer. The number of half columns used does not
affect clock buffer delay. The array clock has up to 18 loads per half column. The global clock has up
to 20 loads per half column.
[8] The following loads are used for tPXZ:
tPHZ
1KΩ
5 pF
Output Load Capacitance (pF)
305075100150
2.12.53.13.64.7
2.22.63.23.74.8
1.21.72.22.83.9
1.62.02.63.14.2
2.0
1.2
1KΩ
tPLZ
5 pF
8-56
56Preliminary
Rev A
Military QuickRAM
RAM Cell Synchronous Write Timing
Propagation Delays (ns)
SymbolParameter
12348
TSWAWA Setup Time to WCLK1.01.01.01.01.0
THWAWA Hold Time to WCLK0.00.00.00.00.0
TSWDWD Setup Time to WCLK1.01.01.01.01.0
THWDWD Hold Time to WCLK0.00.00.00.00.0
TSWEWE Setup Time to WCLK1.01.01.01.01.0
THWEWE Hold Time to WCLK0.00.00.00.00.0
TWCRDWCLK to RD (WA=RA) [5]5.05.35.65.97.1
RAM Cell Synchronous Read Timing
Propagation Delays (ns)
SymbolParameter
12348
TSRARA Setup Time to RCLK1.01.01.01.01.0
THRARA Hold Time to RCLK0.00.00.00.00.0
TSRERE Setup Time to RCLK1.01.01.01.01.0
THRERE Hold Time to RCLK0.00.00.00.00.0
TRCRDRCLK to RD [5]4.04.34.64.96.1
Fanout
Fanout
RAM Cell Asynchronous Read Timing
Propagation Delays (ns)
SymbolParameter
12348
RPDRDRA to RD [5]3.03.33.63.95.1
Notes:
[5] Stated timing for worst case Propagation Del ay over process variation at VC C=3.3V and TA=25°C.
Multiply by the appropriate Delay Factor, K, for speed grade, voltage and temperature settings as
specified in the Operating Range.
Fanout
Rev A
8-57
Military QuickRAM
8-58
58Preliminary
Rev A
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