z Second generation charge-transfer QMatrix technology
z Keys individually adjustable for sensitivity, response
time, and many other critical parameters
z Panel thicknesses to 50mm through any dielectric
z 16 and 24 touch key versions
z 100% autocal for life - no adjustments required
z SPI slave interface
z Adjacent key suppression feature
z Synchronous noise suppression feature
z Spread-spectrum modulation - high noise immunity
z Mix and match key sizes & shapes in one panel
z Low overhead communications protocol
z FMEA compliant design features
z Negligible external component count
z Extremely low cost per key
z +3 to +5V single supply operation
z 32-pin lead-free TQFP package
16, 24 KEY QM
X2
X1
X0
X3
X4
VSS
VDD
VSS
VDD
X5
X6SCK
32 31 30 29 282726 25
2
3
4
5
6
7
817
QT60248
QT60168
TQFP-32
9
10 11161514
X7
VREF
S
SYNC
/RST
12
SMP
ATRIX
Y2A
Y1A
13
DRDY
SS
Y0A
MOSI
™ IC
Y2B
24
23
22
21
20
19
18
MISO
s
Y1B1
Y0B
n/c
VSS
VDD
SYNC
VDD
APPLICATIONS
y Security keypanels
y Industrial keyboards
These digital charge-transfer (“QT”) QMatrix™ ICs are designed to detect human touch on up to 16 or 24 keys when used with a
scanned, passive X-Y matrix. They will project touch keys through almost any dielectric, e.g. glass, plastic, stone, ceramic, and even
wood, up to thicknesses of 5 cm or more. The touch areas are defined as simple 2-part interdigitated electrodes of conductive material,
like copper or screened silver or carbon deposited on the rear of a control panel. Key sizes, shapes and placement are almost entirely
arbitrary; sizes and shapes of keys can be mixed within a single panel of keys and can vary by a factor of 20:1 in surface area. The
sensitivity of each key can be set individually via simple functions over the serial port by a host microcontroller. Key setups are stored
in an onboard eeprom and do not need to be reloaded with each powerup.
These devices are designed specifically for appliances, electronic kiosks, security panels, portable instruments, machine tools, or
similar products that are subject to environmental influences or even vandalism. They permit the construction of 100% sealed,
watertight control panels that are immune to humidity, temperature, dirt accumulation, or the physical deterioration of the panel surface
from abrasion, chemicals, or abuse. To this end they contain Quantum-pioneered adaptive auto self-calibration, drift compensation, and
digital filtering algorithms that make the sensing function robust and survivable.
These devices feature continuous FMEA self-test and reporting diagnostics, to allow their use in critical consumer appliance
applications, for example ovens and cooktops.
Common PCB materials or flex circuits can be used as the circuit substrate; the overlying panel can be made of any non-conducting
material. External circuitry consists of only a few passive parts. Control and data transfer is via an SPI port.
These devices makes use of an important new variant of charge-transfer sensing, transverse charge-transfer, in a matrix format that
minimizes the number of required scan lines. Unlike older methods, it does not require one IC per key.
y Appliance controls
y Outdoor keypads
y ATM machines
y Touch-screens
y Automotive panels
y Machine tools
AVAILABLE OPTIONS
A
0
C to +1050C
LQ
Lead-FreePart Number# KeysT
YesQT60168-ASG16-40
YesQT60248-ASG24-400C to +1050C
QMatrix devices are digital burst mode charge-transfer (QT)
sensors designed specifically for matrix geometry touch
controls; they include all signal processing functions necessary
to provide stable sensing under a wide variety of changing
conditions. Only a few external parts are required for operation.
The entire circuit can be built within a few square centimeters of
single-sided PCB area. CEM-1 and FR1 punched, single-sided
materials can be used for possible lowest cost. The PCB’s rear
can be mounted flush on the back of a glass or plastic panel
using a conventional adhesive, such as 3M VHB 2-sided
adhesive acrylic film.
1.2 Enabling / Disabling Keys
The NDIL parameter is used to enable and disable keys in the
matrix. Setting NDIL = 0 for a key disables it (Section 5.4). At
no time can the number of enabled keys exceed the maximum
specified for the device in the case of the QT60168.
On the QT60168, only the first 2 Y lines (Y0, Y1) are
operational by default. On the QT60168, to use keys located on
line Y2, one or more of the pre-enabled keys must be disabled
simultaneously while enabling the desired new keys. This can
be done in one Setups block load operation.
Figure 1-1 Field flow between X and Y elements
overlying panel
X
element
QMatrix parts employ transverse charge-transfer ('QT') sensing,
a technology that senses changes in electrical charge forced
across an electrode by a pulse edge (Figure 1-1). QMatrix
devices allow for a wide range of key sizes and shapes to be
mixed together in a single touch panel.
The devices use an SPI interface to allow key data to be
extracted and to permit individual key parameter setup. The
interface protocol uses simple single byte commands and
responds with single byte responses in most cases. The
command structure is designed to minimize the amount of data
traffic while maximizing the amount of information conveyed.
In addition to normal operating and setup functions the device
can also report back actual signal strengths and error codes.
QmBtn software for the PC can be used to program the
operation of the IC as well as read back key status and signal
levels in real time.
The QT60168 and QT60248 are electrically identical with the
exception of the number of keys which may be sensed.
Y
element
1.1 Part differences
Versions of the device are capable of a maximum of 16 or 24
keys (QT60168, QT60248 respectively).
These devices are identical in all respects, except that each is
capable of only the number of keys specified. These keys can
be located anywhere within the electrical grid of 8 X and 3 Y
scan lines.
Unused keys are always pared from the burst sequence in
order to optimize speed. Similarly, in a given part a lesser
number of enabled keys will cause any unused acquisition burst
timeslots to be pared from the sampling sequence to optimize
acquire speed. Thus, if only 14 keys are actually enabled, only
14 timeslots are used for scanning.
2 Hardware & Functional
2.1 Matrix Scan Sequence
The circuit operates by scanning each key sequentially, key by
key. Key scanning begins with location X=0 / Y=0 (key #0). X
axis keys are known as rows while Y axis keys are referred to
as columns. Keys are scanned sequentially by row, for example
the sequence X0Y0 X1Y0 .... X7Y0, X0Y1, X1Y1... etc. Keys are
also numbered from 0..24. Key 0 is located at X0Y0. A table of
key numbering is located on page 22.
Each key is sampled in a burst of acquisition pulses whose
length is determined by the Setups parameter BL (page 20),
which can be set on a per-key basis. A burst is completed
entirely before the next key is sampled; at the end of each burst
the resulting signal is converted to digital form and processed.
The burst length directly impacts key gain; each key can have a
unique burst length in order to allow tailoring of key sensitivity
on a key by key basis.
2.2 Disabling Keys; Burst Paring
Keys that are disabled by setting NDIL =0 (Section 5.4, page
19) have their bursts pared from the scan sequence to save
time. This has the consequence of affecting the scan rate of the
entire matrix as well as the time required for initial matrix
calibration.
Reducing the number of enabled keys also reduces the time
required to calibrate an individual key once the matrix is initially
calibrated after power-up or reset, since the total cycle time is
proportional to the number of enabled keys.
Keys that are disabled report as follows:
Signal = 0
Reference = 0
Low-signal error flag (provided LSL >0)
Calibrating flag for key set only just after device reset or
after a CAL command, for one scan cycle only
Failed calibration error for key always set
Detect flag for key never set
See also Section 4.16 notes.
2.3 Response Time
The response time of the device depends on the scan rate of
the keys (Section 5.11), the number of keys enabled (Section
5.4), the detect integrator settings (Section 5.4), the serial
polling rate by the host microcontroller, and the time required to
do FMEA tests at the end of each scan (~5ms).
lQ
3QT60248-AS R4.02/0405
For example:
NKE = Number of keys enabled = 20
FDIL = Fast detect integrator limit = 5
BS = Burst spacing = 0.5ms
FMEA = FMEA test time = 5ms
NDIL = Norm detect integrator Limit = 2
HPR = Host polling rate = 10ms
The oscillator is internal to the device. There is no facility for
external clocking.
2.5 Sample Capacitors; Saturation
The charge sampler capacitors on the Y pins should be the
values shown. They should be X7R or NP0 ceramics or PPS
film. The value of these capacitors is not critical but 4.7nF is
recommended for most cases.
Cs voltage saturation is shown in Figure 2-1. This nonlinearity
is caused by excessively negative voltage on Cs inducing
conduction in the pin protection diodes. This badly saturated
signal destroys key gain and introduces a strong thermal
coefficient which can cause 'phantom' detection. The cause of
this is usually from the burst length being too long, the Cs value
being too small, or the X-Y coupling being too large. Solutions
include loosening up the interdigitation of key structures,
separating X and Y lines on the PCB more, increasing Cs, and
decreasing the burst length.
Increasing Cs will make the part slower; decreasing burst
length will make it less sensitive. A better PCB layout and a
looser key structure (up to a point) have no negative effects.
Cs voltages should be observed on an oscilloscope with the
matrix layer bonded to the panel material; if the Rs side of any
Cs ramps more negative than -0.25 volts during any burst (not
counting overshoot spikes which are probe artifacts), there is a
potential saturation problem.
Figure 2-2 shows a defective waveform similar to that of 2-1,
but in this case the distortion is caused by excessive stray
capacitance coupling from the Y line to AC ground, for example
from running too near and too far alongside a ground trace,
ground plane, or other traces. The excess coupling causes the
charge-transfer effect to dissipate a significant portion of the
received charge from a key into the stray capacitance. This
phenomenon is more subtle; it can be best detected by
increasing BL to a high count and watching what the waveform
does as it descends towards and below -0.25V. The waveform
will appear deceptively straight, but it will slowly start to flatten
even before the -0.25V level is reached.
A correct waveform is shown in Figure 2-3. Note that the
bottom edge of the bottom trace is substantially straight
(ignoring the downward spikes).
Unlike other QT circuits, the Cs capacitor values on QT60xx8
devices have no effect on conversion gain. However they do
affect conversion time.
Unused Y lines should be left open.
2.6 Sample Resistors
There are 3 sample resistors (Rs) used to perform single-slope
ADC conversion of the acquired charge on each Cs capacitor.
These resistors directly control acquisition gain: larger values of
Rs will proportionately increase signal gain. Values of Rs can
range from 380K ohms to 1M ohms. 470K ohms is a
reasonable value for most purposes.
Unused Y lines do not require an Rs resistor.
2.7 Signal Levels
Quantum’s QmBtn™ software makes it is easy to observe the
absolute level of signal received by the sensor on each key.
The signal values should normally be in the range from 250 to
750 counts with properly designed key shapes and values of
Rs. However, long adjacent runs of X and Y lines can also
artificially boost the signal values, and induce signal saturation:
this is to be avoided. The X-to-Y coupling should come mostly
from intra-key electrode coupling, not from stray X-to-Y trace
coupling.
QmBtn software is available free of charge on Quantum’s
website.
The signal swing from the smallest finger touch should
preferably exceed 10 counts, with 15 being a reasonable target.
The signal threshold setting (NTHR) should be set to a value
guaranteed to be less than the signal swing caused by the
smallest touch.
Figure 2-1 VCs - Non-Linear During Burst
(Burst too long, or Cs too small, or X-Y capacitance too large)
Figure 2-2 VCs - Poor Gain, Non-Linear During Burst
(Excess capacitance from Y line to Gnd)
Figure 2-3 Vcs - Correct
lQ
4QT60248-AS R4.02/0405
Figure 2-4 X-Drive Pulse Roll-off and Dwell Time
X drive
Dwell time
Y gate
Lost charge due to
inadequate settling
before end of dwell time
Figure 2-5 Probing X-Drive Waveforms With a Coin
Increasing the burst length (BL) parameter will increase the
signal strengths as will increasing the sampling resistor (Rs)
values.
2.8 Matrix Series Resistors
The X and Y matrix scan lines should use series resistors
(referred to as Rx and Ry respectively) for improved EMI
performance.
X drive lines require them in most cases to reduce edge rates
and thus reduce RF emissions. Typical values range from 1K to
20K ohms.
Y lines need them to reduce EMC susceptibility problems and in
some extreme cases, ESD. Typical Y values range around 1K
ohms. Y resistors act to reduce noise susceptibility problems by
forming a natural low-pass filter with the Cs capacitors.
It is essential that the Rx and Ry resistors and Cs capacitors be
placed very close to the chip. Placing these parts more than a
few millimeters away opens the circuit up for high frequency
interference problems (above 20MHz) as the trace lengths
between the components and the chip start to act as RF
antennae.
Figure 2-6 Recommended Key Structure
‘T’ should ideally be similar to the complete thickness the fields need to
penetrate to the touch surface. Smaller dimensions will also work but will give
less signal strength. If in doubt, make the pattern coarser.
The upper limits of Rx and Ry are reached when the signal
level and hence key sensitivity are clearly reduced. The limits of
Rx and Ry will depending on key geometry and stray
capacitance, and thus an oscilloscope is required to determine
optimum values of both.
The upper limit of Rx can vary depending on key geometry and
stray capacitance, and some experimentation and an
oscilloscope are required to determine optimum values.
Dwell time is the duration in which charge coupled from X to Y
is captured. Increasing Rx values will cause the leading edge of
the X pulses to increasingly roll off, causing the loss of captured
charge (and hence loss of signal strength) from the keys
(Figure 2-4). The dwell time of these parts is fixed at 375ns. If
the X pulses have not settled within 375ns, key gain will be
reduced; if this happens, either the stray capacitance on the X
line(s) should be reduced (by a layout change, for example by
reducing X line exposure to nearby ground planes or traces), or,
the Rx resistor needs to be reduced in value (or a combination
of both approaches).
One way to determine X line settling time is to monitor the fields
using a patch of metal foil or a small coin over the key (Figure
2-5). Only one key along a particular X line needs to be
observed, as each of the keys along that X line will be identical.
The 250ns dwell time should be exceed the observed 95%
settling of the X-pulse by 25% or more.
In almost all case, Ry should be set equal to Rx, which will
ensure that the charge on the Y line is fully captured into the Cs
capacitor.
2.9 Key Design
Circuits can be constructed out of a variety of materials
including flex circuits, FR4, and even inexpensive single-sided
CEM-1.
The actual internal pattern style is not as important as is the
need to achieve regular X and Y widths and spacings of
sufficient size to cover the desired graphical key area or a little
bit more; ~3mm oversize is acceptable in most cases, since the
key’s electric fields drop off near the edges anyway. The overall
key size can range from 10mm x 10mm up to 100mm x 100mm
but these are not hard limits. The keys can be any shape
including round, rectangular, square, etc. The internal pattern
lQ
5QT60248-AS R4.02/0405
can be as simple as a single bar of Y within a solid perimeter of
X, or (preferably) interdigitated as shown in Figure 2-6.
For better surface moisture suppression, the outer perimeter of
X should be as wide as possible, and there should be no
ground planes near the keys. The variable ‘T’ in this drawing
represents the total thickness of all materials that the keys must
penetrate.
See Figure 2-6 and page 27 for examples of key layouts.
See Section 2.16 for guidance about potential FMEA problems
with small key shapes.
2.10 PCB Layout, Construction
It is best to place the chip near the touch keys on the same
PCB so as to reduce X and Y trace lengths, thereby reducing
the chances for EMC problems. Long connection traces act as
RF antennae. The Y (receive) lines are much more susceptible
to noise pickup than the X (drive) lines.
Even more importantly, all signal related discrete parts (R’s and
C’s) should be very close to the body of the chip. Wiring
between the chip and the various R’s and C’s should be as
short and direct as possible to suppress noise pickup.
Ground planes and traces should NOT
be used around the keys and the Y lines
from the keys. Ground areas, traces, and
other adjacent signal conductors that act
as AC ground (such as Vdd and LED
drive lines etc) will absorb the received key signals
and reduce signal-to-noise ratio (SNR) and thus will
be counterproductive. Ground planes around keys will
also make water film effects worse.
solder joints, causing signal drift and resultant false detections
or transient losses of sensitivity or instability. Conformal
coatings will trap in existing amounts of moisture which will then
become highly temperature sensitive.
The designer should specify ultrasonic cleaning as part of the
manufacturing process, and in cases where a high level of
humidity is anticipated, the use of conformal coatings after
cleaning to keep out moisture.
2.11 Power Supply Considerations
As these devices use the power supply itself as an analog
reference, the power should be very clean and come from a
separate regulator. A standard inexpensive LDO type regulator
should be used that is not also used to power other loads such
as LEDs, relays, or other high current devices. Load shifts on
the output of the LDO can cause Vdd to fluctuate enough to
cause false detection or sensitivity shifts.
A single ceramic 0.1uF bypass capacitor should be placed very
close to supply pins 3, 4, 5 and 6 of the IC. Pins 18, 20, and 21
do not require bypassing.
Vdd can range from +3 to +5 nominal. The device enters reset
below 2.8V via an internal LVD circuit. See Section 2.13.
2.12 Startup / Calibration Times
The devices require initialization times as follows:
Normal cold start to ability to communicate:
4ms - Normal initialization from any type of reset
22ms - Initialization from reset where the Setups were
previously modified.
Calibration time per key vs. burst spacings for 16 and 24
enabled keys:
Table 2-1 Basic Timings
Ground planes, if used, should be placed under or around the
QT chip itself and the associated R’s and C’s in the circuit,
under or around the power supply, and back to a connector, but
nowhere else.
See page 27 for an example of a 1-sided PCB layout.
2.10.1 LED Traces and Other Switching Signals
Digital switching signals near the Y lines will induce transients
into the acquired signals, deteriorating the SNR perfomance of
the device. Such signals should be routed away from the Y
lines, or the design should be such that these lines are not
switched during the course of signal acquisition (bursts).
LED terminals which are multiplexed or switched into a floating
state and which are within or physically very near a key
structure (even if on another nearby PCB) should be bypassed
to either Vss or Vdd with at least a 10nF capacitor of any type,
to suppress capacitive coupling effects which can induce false
signal shifts. Led terminals which are constantly connected to
Vss or Vdd do not need further bypassing.
2.10.2 PCB Cleanliness
All capacitive sensors should be treated as highly sensitive
circuits which can be influenced by stray conductive leakage
paths. QT devices have a basic resolution in the femtofarad
range; in this region, there is no such thing as ‘no clean flux’.
Flux absorbs moisture and becomes conductive between
Burst Spacing,
ms
To the above, add the initialization time from above (4ms or
22ms) to get the total elapsed time from reset, to the ability to
report key detections over the serial interface. Disabled keys
are subtracted from the burst sequence and thus the cal time is
shortened. The scan time should be measured on an
oscilloscope.
Keys that cannot calibrate for some reason require 5 full cal
cycles before they report as errors. The device can report back
during the calibration interval that the key(s) affected are still in
calibration via status function bits. Errors can be observed after
a cal cycle using the 0x8k command (see Section 4.16).
Cal Time, ms,
16 keys
Cal Time, ms,
24 keys
2281760.50
3092310.75
3902861.00
4723421.25
5533971.50
6344521.75
7155072.00
7975632.25
8786182.50
9596732.75
1,0407283.00
2.13 Reset Input
The /RST pin can be used to reset the device to simulate a
power down cycle, in order to bring the part up into a known
lQ
6QT60248-AS R4.02/0405
state should communications with the part be lost. The pin is
active low, and a low pulse lasting at least 10µs must be
applied to this pin to cause a reset.
To provide for proper operation during power transitions the
devices have an internal LVD set to 2.7 volts.
The reset pin has an internal 30K ~ 80K resistor. A 2.2µF
capacitor plus a diode to Vdd can be connected to this pin as a
traditional reset circuit, but this is not required.
A Force Reset command, 0x04 is also provided which
generates an equivalent hardware reset.
If an external hardware reset is not used, the reset pin may be
connected to Vdd or left floating.
2.14 Spread Spectrum Acquisitions
QT60xx8 devices use spread-spectrum burst modulation. This
has the effect of drastically reducing the possibility of EMI
effects on the sensor keys, while simultaneously spreading RF
emissions. This feature is hard-wired into the device and
cannot be disabled or modified.
Spread spectrum is configured as a frequency chirp over a
wide range of frequencies for robust operation.
2.15 Detection Integrators
See also Section 5.4, page 19.
The devices feature a detection integration mechanism, which
acts to confirm a detection in a robust fashion. The basic idea is
to increment a per-key counter each time the key has crossed
its threshold. When this counter reaches a preset limit the key
is finally declared to be touched. Example: If the limit value is
10, then the device has to detect a threshold crossing 10 times
in succession without interruption, before the key is declared to
be touched. If on any sample the signal is not seen to cross the
threshold level, the counter is cleared and the process has to
start over from the beginning.
The QT60xx8 uses a two-tier confirmation mechanism having
two such counters for each key. These can be thought of as
‘inner loop’ and ‘outer loop’ confirmation counters.
The ‘inner’ counter is referred to as the ‘fast-DI’; this acts to
attempt to confirm a detection via rapid successive acquisition
bursts, at the expense of delaying the sampling of the next key.
Each key has its own fast-DI counter and limit value; these
limits can be changed via the Setups block on a per-key basis.
The ‘outer’ counter is referred to as the ‘normal-DI’; this DI
counter increments whenever the fast-DI counter has reached
its limit value. If a fast-DI counter failed to reach its terminal
count, the corresponding normal-DI counter is also reset. The
normal-DI counter also has a limit value which is settable on a
per-key basis. If a normal-DI counter reaches its terminal count,
the corresponding key is declared to be touched and becomes
‘active’. Note that the normal-DI can only be incremented once
per complete keyscan cycle, ie more slowly, whereas the
fast-DI is incremented ‘on the spot’ without interruption.
The net effect of this mechanism is a multiplication of the inner
and outer counters and hence a highly noise-resistance
sensing method. If the inner limit is set to 5, and the outer to 3,
the net effect is 5x3=15 successive threshold crossings to
declare a key as active.
2.16 FMEA Tests
FMEA (Failure Modes and Effects Analysis) is a tool used to
determine critical failure problems in control systems. FMEA
analysis is being applied increasingly to a wide variety of
applications including domestic appliances. To survive FMEA
testing the control board must survive any single problem in a
way that the overall product can either continue to operate in a
safe way, or shut down.
The most common FMEA requirements regard opens and
shorts analysis of adjacent pins on components and
connectors. However other criteria must usually be taken into
account, for example complete device failure, and the use of
redundant signaling paths.
QT60xx8 devices incorporate special self-test features which
allow products to pass such FMEA tests easily. These tests are
performed during a dummy timeslot after the last enabled key.
The FMEA testing is done on all enabled keys in the matrix, and
results are reported via the serial interface through a dedicated
status command (page 13). Disabled keys are not tested. The
existence of an error is also reported in normal key reporting
commands such as Report 1st Key, page 13.
All FMEA tests are repeated every second or faster during
normal run operation. Sometimes, FMEA errors can occur
intermittently, for example due to momentary power
fluctuations. It is advisable to confirm a true FMEA fault
condition by making sure the error flags persist for a several
seconds.
Since the devices only communicate in slave mode, the host
can determine immediately if the QT has suffered a
catastrophic failure.
The FMEA tests performed are:
X drive line shorts to Vdd and Vss
X drive line shorts to other pins
X drive signal deviation
Y line shorts to Vdd and Vss
Y line shorts to other pins
X to Y line shorts
Cs capacitor checks including shorts and opens
Vref test
Key gain test
Other tests incorporated into the devices include:
A test for signal levels against a preset min value (LSL
setup, see page 21). If any signal level falls below this
level, an error flag is generated.
CRC communications checks on all critical command and
data transmissions.
‘Last-command’ command to verify that an instruction was
properly received.
Some very small key designs have very low X-Y coupling. In
these cases, the amount of signal will be very small, and the
key gain will be low. As a result, small keys can fail the LSL
test (page 21) or the FMEA key gain test (above). In such
cases, the burst length of the key should be increased so that
the key gain increases. Failing that, a small ceramic capacitor,
for example 3pF, can be added between the X and Y lines
serving the key to artificially boost signal strength.
For those applications requiring it, Quantum can supply sample
FMEA test data on special request.
lQ
7QT60248-AS R4.02/0405
2.17 Wiring
Table 2.2 - Pin Listing
1= Comms ready;
ODRDY13
has internal 20K ~ 50K pull-up
SPI slave select;
I/SS14
has internal 20K ~ 50K pull-up
Y0B line connectionIY0B23
Y1B line connectionIY1B24
Y2B line connectionIY2B25
Y0A line connectionIY0A26
Y1A line connectionIY1A27
Y2A line connectionIY2A28
Reset low;