QT QRD1113, QRD1114 Datasheet
PACKAGE DIMENSIONS
0.173 (4.39)
0.120 (3.05)
0.240 (6.10)
0.183 (4.65)
0.500 (12.7)
MIN
0.020 (0.51)
SQ. (4X)
0.100 (2.54)
0.083 (2.11)
OPTICAL
CENTERLINE
PIN 1 COLLECTOR
PIN 2 EMITTER PIN 4 CATHODE
PIN 3 ANODE
PIN 1 INDICATOR
0.083 (2.11)
3
4
2
1
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
3. Pins 2 and 4 typically .050” shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
NOTES
(Applies to Max Ratings and Characteristics Tables.)
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron
1/16” (1.6mm) from housing.
5. As long as leads are not under any spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Cross talk (I
CX
) is the collector current measured with the
indicator current on the input diode and with no reflective surface.
8. Measured using an Eastman Kodak neutral white test card with
90% diffused reflecting as a reflective surface.
1 of 3 100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
FEATURES
• Phototransistor Output
• No contact surface sensing
• Unfocused for sensing diffused surfaces
• Compact Package
• Daylight filter on sensor
SCHEMATIC
Parameter Symbol Rating Units
Operating Temperature T
OPR
-40 to +85
°C
Storage Temperature T
STG
-40 to +85
°C
Lead Temperature (Solder Iron)
(2,3)
T
SOL-I
240 for 5 sec
°C
Lead Temperature (Solder Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
EMITTER
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
SENSOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
23
14
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER
I
F
= 20 mA V
F
——1.7 V
Forward Voltage
Reverse Current VR= 5 V I
R
——100 µA
Peak Emission Wavelength IF= 20 mA
!
PE
— 940 — nm
SENSOR
I
C
= 1 mA BV
CEO
30 —— V
Collector-Emitter Breakdown
Emitter-Collector Breakdown IE= 0.1 mA BV
ECO
5 —— V
Dark Current VCE= 10 V, IF= 0 mA I
D
——100 nA
COUPLED IF= 20 mA, VCE= 5 V
I
C(ON)
0.300 —— mA
QRD1113 Collector Current D = .050”
(6,8)
QRD1114 Collector Current
IF= 20 mA, VCE= 5 V
I
C(ON)
1 —— mA
D = .050”
(6,8)
Collector Emitter IF= 40 mA, IC = 100 µA
V
CE (SAT)
——0.4 V
Saturation Voltage D = .050”
(6,8)
Cross Talk IF= 20 mA, VCE= 5 V, EE= 0
(7)
I
CX
— .200 10 µA
Rise Time VCE= 5 V, RL = 100 " t
r
— 10 — µs
Fall Time I
C(ON)
= 5 mA t
f
— 50 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA= 25°C)
2 of 3 100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
Loading...