QT QED121, QED122, QED123 Datasheet

0.195 (4.95)

0.040 (1.02)
NOM

0.100 (2.54)
NOM

0.050 (1.25)

0.800 (20.3)
MIN

0.305 (7.75)

0.240 (6.10)

0.215 (5.45)

0.020 (0.51)
SQ. (2X)

REFERENCE

SURFACE

CATHODE

1. Derate power dissipation linearly 2.67
mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are
recommended as cleaning agents.

4. Soldering iron

1/16” (1.6mm) minimum

from housing.

1 of 2 100021B

PACKAGE DIMENSIONS

FEATURES

• != 880 nm

• Chip material = AlGaAs

• Package type: T-1 3/4 (5mm lens diameter)

• Matched Photosensor: QSD122/123/124

• Narrow Emission Angle, 18°

• High Output Power

• Package material and color: Clear, peach tinted, plastic

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-40 to +100 °C

Storage Temperature T

STG

-40 to +100 °C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec °C

Continuous Forward Current I

F

50 mA

Reverse Voltage V

R

5V

Power Dissipation

(1)

P

D

200 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC

QED121/122/123

PLASTIC INFRARED LIGHT EMITTING DIODE

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Emission Wavelength IF= 100 mA !

PE

— 880 — nm
Emission Angle IF= 100 mA " — ±9 — Deg.
Forward Voltage IF= 100 mA, tp = 20 ms V

F

——1.7 V
Reverse Current VR= 5 V I

R

——10 µA
Radiant Intensity QED121 IF= 100 mA, tp = 20 ms I

E

20 — 40 mW/sr
Radiant Intensity QED122 IF= 100 mA, tp = 20 ms I

E

50 — 100 mW/sr
Radiant Intensity QED123 IF= 100 mA, tp = 20 ms I

E

80 —— mW/sr
Rise Time

I

F

= 100 mA

t

r

— 800 — ns
Fall Time t

f

— 800 — ns

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C)

ANODE

CATHODE

2 of 2 100021B

QED121/122/123

PLASTIC INFRARED LIGHT EMITTING DIODE

TYPICAL PERFORMANCE CURVES

10

1

0.1

0.01

0.001

NORMALIZED RADIANT INTENSITY

Normalized to:

= 100 mA, TA = 25˚C

I

F

Pulse Width = 100 µs

110

IF - INPUT CURRENT (mA)

Fig. 1 Normalized Radiant Intensity vs. Input Current

2.5

IF = 100 mA

IF = 10 mA

- FORWARD VOLTAGE (V)

F

V

2

1.5

1

0.5

0

Pulse Width = 100 µs
Duty Cycle = 0.1%

-30-40 -20 -10 0 10 20 30 40 50 60 70 80 90 100

TA - TEMPERATURE (˚C)

Fig. 3 Forward Voltage vs. Temperature

100 1000

IF = 50 mA

IF = 20 mA

1

0.8

0.6

0.4

0.2

0

NORMALIZED COLLECTOR CURRENT

01

IF = 100 mA

IF = 20 mA

23456

Normalized to:
Pulse Width = 100 µs
Duty Cycle = 0.1%

= 5 V

V

CC

R

= 100 #

L

T

A

= 25˚C

LENS TIP SEPERATION (INCHES)

Fig. 2 Coupling Characteristics of QED12X and QSD12X

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

NORMALIZED RADIANT INTENSITY

0.1

775 800 825 850 875 900 925 950

! (nm)

Fig. 4 Normalized Radiant Intensity vs. Wavelength

Fig. 5 Radiation Pattern

0˚

10

20

30

40

50

60

70

80

90

-10

-20

-30

-40

-50

-60

-70

-80

0 20406080100020406080100

-90