QT MOC8030, MOC8050 Datasheet
6
FEATURES
• High BV
CEO
-Minimum 80 V
• High current transfer ratio
-300% (MOC8030)
-500% (MOC8050)
• No base connection for improved noise immunity
• Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The MOC8030 and MOC8050 are photodarlington-type optically
coupled optocouplers. The devices have a gallium arsenide infrared
emitting diode coupled with a silicon darlington phototransistor.
3/13/00 200035A
PHOTODARLINGTON OPTOCOUPLERS
Preliminary (NO BASE CONNECTION)
MOC8030
MOC8050
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ TA= 25°C
P
D
250 mW
Derate above 25°C 2.94 mW/°C
Input-Output Isolation Voltage V
ISO
5300 Vac(rms)
EMITTER
I
F
60 mA
DC/Average Forward Input Current
Reverse Input Voltage V
R
3V
LED Power Dissipation @ TA= 25°C
P
D
120 mW
Derate above 25°C 1.41 mW/°C
DETECTOR
V
CEO
80 V
Collector-Emitter Voltage
Detector Power Dissipation @ TA= 25°C
P
D
150 mW
Derate above 25°C 1.76 mW/°C
Continuous Collector Current I
C
150 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C Unless otherwise specified.)
PACKAGE DIMENSIONS
0.100 (2.54)
TYP
0.020 (0.51)
MIN
0.350 (8.89)
0.330 (8.38)
0.270 (6.86)
0.240 (6.10)
PIN 1
ID.
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.115 (2.92)
0.300 (7.62)
TYP
0° to 15°
0.154 (3.90)
0.100 (2.54)
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
NOTE
All dimensions are in inches (millimeters)
APPLICATIONS
• Appliances, measuring instruments
• I/O interface for computers
• Programmable controllers
• Portable electronics
• Interfacing and coupling systems of
different potentials and impedance
• Solid state relays
ANODE
CATHODE
N/C
1
2
3
N/C
6
COLLECTOR
5
4
EMITTER
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
1.15 2 V
Input Forward Voltage
Input Capacitance (VF= 0, f = 1 MHz) C
IN
18 pF
Reverse Leakage Current (VR= 3.0 V) I
R
0.05 10 µA
DETECTOR
(I
C
= 1.0 mA) BV
CEO
80 V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage (IE= 100 µA) BV
ECO
5V
Collector-Emitter Dark Current (VCE= 60 V) I
CEO
1µA
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
DC Characteristic Test Conditions Symbol Min Typ** Max Units
Current Transfer Ratio, MOC8030 (IF= 10 mA, VCE= 1.5 V)
CTR
300
%
Collector-Emitter MOC8050 (I
F
= 10 mA, VCE= 1.5 V) 500
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ** Max Units
SWITCHING TIMES
t
on
3.5 µs
Turn-on Time
(V
CC
= 10 V, RL= 100!, IF= 5 mA)
Turn-off Time t
off
95 µs
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ** Max Units
Input-Output Isolation Voltage
(I
I-O
"#1 µA, 1 min.)
V
ISO
7500 Vac(pk)
(I
I-O
"#1 µA, 1 min.) 5300 Vac(rms)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
!
Isolation Capacitance (f = 1 MHz) C
ISO
0.5 pf
ISOLATION CHARACTERISTICS
3/13/00 200035A
MOC8030
MOC8050
PHOTODARLINGTON OPTOCOUPLERS
Preliminary (NO BASE CONNECTION)
Note
** Typical values at T
A
= 25°C
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