QT H11B815 Datasheet
FEATURES
• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF= 1 mA)
• High isolation voltage between input and output (5300
VRMS)
• UL recognized (File # E90700)
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared
emitting diode driving a silicon Darlington phototransistor
in a 4-pin dual in-line package.
4-PIN PHOTODARLINGTON
OPTOCOUPLERS
H11B815
APPLICATIONS
• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line
Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ TA= 25°CP
D
250 mW
EMITTER
I
F
80 mA
DC/Average Forward Input Current
Reverse Input Voltage V
R
6V
Forward Current - Peak (1µs pulse, 300pps) IF(pk) 1 A
LED Power Dissipation @ TA= 25°C
P
D
140 mW
Derate above 25°C 1.33 mW/°C
DETECTOR
V
CEO
35 V
Collector-Emitter Voltage
Emitter-Collector Voltage V
ECO
6V
Continuous Collector Current I
C
200 mA
Detector Power Dissipation @ TA= 25°C
P
D
200 mW
Derate above 25°C 2.0 mW/°C
ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C)
1/25/00 200029A
4
4
1
1
4
1
4
COLLECTORANODE
1
CATHODE
2
3 EMITTER
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
(I
F
= 20 mA) V
F
1.2 1.50 V
Input Forward Voltage
Reverse Leakage Current (VR= 6.0 V) I
R
0.001 10 µA
DETECTOR
(I
C
= 1.0 mA, IF= 0) BV
CEO
35 60 V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage (IE= 100 µA, IF= 0) BV
ECO
68 V
Collector-Emitter Dark Current (VCE= 10 V, IF= 0) I
CEO
0.005 1 µA
Capacitance (VCE= 0 V, f = 1 MHz) C
CE
8pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
DC Characteristic Test Conditions Symbol Min Typ** Max Units
Current Transfer Ratio, Collector-Emitter (IF= 1 mA, VCE= 2 V) CTR 600 7,500 %
Saturation Voltage (IF= 20 mA, IC= 5 mA) V
CE(sat)
0.8 1.0 V
Rise Time (non saturated) (IC= 10 mA, VCE= 2 V, RL= 100!)t
r
300 µs
Fall Time (non saturated) (IC= 10 mA, VCE= 2 V, RL= 100!)t
f
250 µs
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ** Max Units
Input-Output Isolation Voltage (I
I-O
"#1 µA, 1 min.) V
ISO
5300 Vac(rms)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
!
Isolation Capacitance (V
I-O
= $, f = 1 MHz) C
ISO
0.5 pf
ISOLATION CHARACTERISTICS
1/25/00 200029A
H11B815
4-PIN PHOTODARLINGTON
OPTOCOUPLERS
** All typicals at TA= 25°C
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