QT H11AA814A, H11AA814, H11A817D, H11A817C, H11A817B Datasheet
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PACKAGE DIMENSIONS DESCRIPTION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
■ Compact 4-pin package
■ Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
FEATURES
APPLICATIONS
4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
H11AA814 Series
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
H11A817 Series
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Industrial controls
TOTAL PACKAGE OUTPUT TRANSISTOR
Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C Power dissipation (25° C ambient) . . . . .150 mW
Operating temperature . . . . . . . . . . . . . . . -55° to 100° C Derate linearly (above 25° C) . . . . . .2.0 mW/° C
Lead solder temperature . . . . . . . . . . . 260° C for 10 sec V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA
INPUT DIODE
Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
ABSOLUTE MAXIMUM RATING
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
.020 (.51) MIN
.100 (2.54) TYP
.200
(5.10)
MAX
.158 (4.01)
.144 (3.68)
0 to 15°
.022 (.56)
.015 (.40)
.055 (1.40)
.047 (1.20)
.187 (4.75)
.175 (4.45)
.270 (6.86)
.248 (6.30)
.327
(8.30)
MAX
.300
(7.62)
MIN
.380
(9.64)
MAX
.012 (.30)
.007 (.20)
.154 (3.90)
.120 (3.05)
1
2
4
3
COLLECTOR
EMITTER
Equivalent Circuit (H11AA814)
1
2
4
3
ANODE
CATHODE
COLLECTOR
EMITTER
Equivalent Circuit (H11A817)
142
3
4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
INPUT DIODE
Forward voltage
H11A817 V
F
1.2 1.5 V I
F
= 20 mA
H11AA814 V
F
1.2 1.5 V I
F
= ±20 mA
Reverse current
H11A817 I
R
.001 10 µA V
R
= 5 V
OUTPUT TRANSISTOR
Breakdown voltage
Collector to emitter BV
CEO
35 100 V IC= 1 mA, IF= 0
Emitter to collector BV
ECO
6 10 V IE= 100 µA, IF= 0
Collector dark current I
CEO
.025 100 nA VCE= 10 V, IF= 0
Capacitance C
CE
8 pF VCE= 0 V, f = 1 MHz
ELECTRO-OPTICAL CHARACTERISTICS (TA = 25° C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise)
CHARACTERISTIC SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
DC current transfer ratio
H11AA814 CTR 20 300 % I
F
= ±1 mA,V
CE
= 5V
H11AA814A CTR 50 150 % I
F
= ±1 mA,V
CE
= 5V
H11A817 CTR 50 600 % I
F
= 5 mA,V
CE
= 5V
H11A817A CTR 80 160 %
H11A817B CTR 130 260 %
H11A817C CTR 200 400 %
H11A817D CTR 300 600 %
Saturation Voltage V
CE (SAT)
0.1 0.2 V I
F
= (±)20 mA, I
C
= 1 mA
Rise time (non saturated) t
r
2.4 18 µs I
C
= 2 mA, V
CE
= 2 V,
RL= 100 Ω
Fall time (non saturated) t
f
2.4 18 µs I
C
= 2 mA, V
CE
= 2 V,
RL= 100 Ω
TRANSFER CHARACTERISTICS
CHARACTERISTIC SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Steady-state isolation voltage V
ISO
5300 V
RMS
1 Minute
Isolation resistance R
ISO
10
11
Ω V
I-O
= 500 VDC
Isolation capacitance C
ISO
0.5 pF V
I-O
= Ø, f = 1 MHz
ISOLATION CHARACTERISTICS
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