QT CNY17F-4, CNY17F-3, CNY17F-2, CNY17F-1 Datasheet

Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
F
90 mA
Forward Current - Peak (PW = 1µs, 300pps) IF(pk) 3.0 A
Reverse Voltage V
6 Volts
LED Power Dissipation @ TA= 25°C
P
135 mW
Derate above 25°C 1.8 mW/°C
DETECTOR
Detector Power Dissipation @ T
A
= 25°C P
200 mW
Derate above 25°C 2.67 mW/°C
TOTAL DEVICE
Total Device Power Dissipation @ T
A
= 25°C P
260 mW
Derate above 25°C 3.5 mW/°C
Ambient Operating Temperature Range T
A
-55 to +100 °C
Storage Temperature Range T
stg
-55 to +150 °C
Lead Soldering Temperature
T
L
260 °C
(1/16” from case, 10 sec. duration)
ABSOLUTE MAXIMUM RATINGS
(TA=25°C Unless otherwise specified)
DESCRIPTION
The CNY17F series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor
FEATURES
High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute
High BV
CEO
minimum 70 volts
Maximum switching time in saturation specified
Underwriters Laboratory (UL) recognized file #E90700
APPLICATIONS
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
NOTE
1. Input-Output Isolation Voltage,VISO, is an internal device dielectric breakdown rating.
7/17/00 200027B
CNY17F-1
(CTR = 40%-80%)
CNY17F-2
(CTR = 63%-125%)
CNY17F-3
(CTR = 100%-200%)
CNY17F-4
(CTR = 160%-320%)
6
1
6
1
1
2
3NC
6
1
SCHEMATIC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
6NC
5
4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
7/17/00 200027B
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
(I
F
= 60 mA) V
F
1.35 1.65 V
Input Forward Voltage
Forward Voltage Temp. Coefficient
V
F
-1.8 mV/°C
T
A
Reverse Voltage (IR= 10 µA) V
6.0 15 V
Junction Capacitance
(V
F
= 0 V, f = 1 MHz)
C
J
50
pF
(V
F
= 1 V, f = 1 MHz) 65
Reverse Leakage Current (VR= 3.0 V) I
.35 10 µA
DETECTOR
(I
= 1.0 mA, IF= 0) BV
CEO
70 100 V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage (IE= 100 µA, IF= 0) BV
ECO
710 V
Collector-Emitter Dark Current (VCE= 10 V, IF= 0) I
CEO
550nA
Capacitance (VCE= 0 V, f = 1 MHz) C
CE
8pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
AC Characteristic Test Conditions Symbol Min Typ** Max Units
NON-SATURATED SWITCHING TIMES
t
on
6.0 10 µs
Turn-on Time (R
L
= 100 1, IC= 2 mA, VCC= 10 V) (Fig. 7)
Turn-off Time t
off
5.5 10 µs
SATURATED SWITCHING TIMES
Turn-on Time (I
F
= 20 mA, VCE= 0.4 V) 3.0 5.5
CNY17F-1
t
on
µs
CNY17F-2
CNY17F-3 (I
F
= 10 mA, VCE= 0.4 V) 4.2 8.0
CNY17F-4
Rise Time
(I
F
= 20 mA, VCE= 0.4 V) 2.0 4.0
CNY17F-1
CNY17F-2 t
r
µs
CNY17F-3 (I
F
= 10 mA, VCE= 0.4 V) 3.0 6.0
CNY17F-4
Turn-off Time
(I
F
= 20 mA, VCE= 0.4 V) 18 34
CNY17F-1
CNY17F-2 t
off
µs
CNY17F-3 (I
F
= 10 mA, VCE= 0.4 V) 23 39
CNY17F-4
Fall Time
(I
F
= 20 mA, VCE= 0.4 V) 11 20
CNY17F-1
CNY17F-2 t
f
µs
CNY17F-3 (I
F
= 10 mA, VCE= 0.4 V) 14 24
CNY17F-4
TRANSFER CHARACTERISTICS
** All typicals at TA= 25°C
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