QT CNY17F-4, CNY17F-3, CNY17F-2, CNY17F-1 Datasheet

Rating Symbol Value Unit

EMITTER

Forward Current - Continuous I

F

90 mA

Forward Current - Peak (PW = 1µs, 300pps) IF(pk) 3.0 A

Reverse Voltage V

R

6 Volts

LED Power Dissipation @ TA= 25°C

P

D

135 mW

Derate above 25°C 1.8 mW/°C

DETECTOR

Detector Power Dissipation @ T

A

= 25°C P

D

200 mW

Derate above 25°C 2.67 mW/°C

TOTAL DEVICE

Total Device Power Dissipation @ T

A

= 25°C P

D

260 mW

Derate above 25°C 3.5 mW/°C

Ambient Operating Temperature Range T

A

-55 to +100 °C

Storage Temperature Range T

stg

-55 to +150 °C

Lead Soldering Temperature

T

L

260 °C

(1/16” from case, 10 sec. duration)

ABSOLUTE MAXIMUM RATINGS

(TA=25°C Unless otherwise specified)

DESCRIPTION

The CNY17F series consists of a Gallium Arsenide IRED coupled with an NPN
phototransistor

FEATURES

• High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute

• High BV

CEO

minimum 70 volts

• Maximum switching time in saturation specified

• Underwriters Laboratory (UL) recognized file #E90700

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

6-PIN DIP OPTOCOUPLERS FOR

POWER SUPPLY APPLICATIONS

(NO BASE CONNECTION)

NOTE

1. Input-Output Isolation Voltage,VISO, is an internal device dielectric breakdown rating.

7/17/00 200027B

CNY17F-1

(CTR = 40%-80%)

CNY17F-2

(CTR = 63%-125%)

CNY17F-3

(CTR = 100%-200%)

CNY17F-4

(CTR = 160%-320%)

6

1

6

1

1

2

3NC

6

1

SCHEMATIC

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. NO CONNECTION

6NC

5

4

CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4

7/17/00 200027B

Parameter Test Conditions Symbol Min Typ** Max Unit

EMITTER

(I

F

= 60 mA) V

F

1.35 1.65 V

Input Forward Voltage

Forward Voltage Temp. Coefficient

V

F

-1.8 mV/°C

T

A

Reverse Voltage (IR= 10 µA) V

R

6.0 15 V

Junction Capacitance

(V

F

= 0 V, f = 1 MHz)

C

J

50

pF

(V

F

= 1 V, f = 1 MHz) 65

Reverse Leakage Current (VR= 3.0 V) I

R

.35 10 µA

DETECTOR

(I

C

= 1.0 mA, IF= 0) BV

CEO

70 100 V

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage (IE= 100 µA, IF= 0) BV

ECO

710 V

Collector-Emitter Dark Current (VCE= 10 V, IF= 0) I

CEO

550nA

Capacitance (VCE= 0 V, f = 1 MHz) C

CE

8pF

INDIVIDUAL COMPONENT CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

(TA= 25°CUnless otherwise specified.)

AC Characteristic Test Conditions Symbol Min Typ** Max Units

NON-SATURATED SWITCHING TIMES

t

on

6.0 10 µs

Turn-on Time (R

L

= 100 1, IC= 2 mA, VCC= 10 V) (Fig. 7)

Turn-off Time t

off

5.5 10 µs

SATURATED SWITCHING TIMES

Turn-on Time (I

F

= 20 mA, VCE= 0.4 V) 3.0 5.5

CNY17F-1

t

on

µs

CNY17F-2

CNY17F-3 (I

F

= 10 mA, VCE= 0.4 V) 4.2 8.0

CNY17F-4

Rise Time

(I

F

= 20 mA, VCE= 0.4 V) 2.0 4.0

CNY17F-1

CNY17F-2 t

r

µs

CNY17F-3 (I

F

= 10 mA, VCE= 0.4 V) 3.0 6.0

CNY17F-4

Turn-off Time

(I

F

= 20 mA, VCE= 0.4 V) 18 34

CNY17F-1

CNY17F-2 t

off

µs

CNY17F-3 (I

F

= 10 mA, VCE= 0.4 V) 23 39

CNY17F-4

Fall Time

(I

F

= 20 mA, VCE= 0.4 V) 11 20

CNY17F-1

CNY17F-2 t

f

µs

CNY17F-3 (I

F

= 10 mA, VCE= 0.4 V) 14 24

CNY17F-4

TRANSFER CHARACTERISTICS

** All typicals at TA= 25°C