QT CNX83A.W, CNX82A.W Datasheet
FEATURES
• Input/Output pin distance 10.16 mm
• UL recognized (File # E90700)
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
PACKAGE DIMENSIONS
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
0.070 (1.78)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.154 (3.90)
0.100 (2.54)
0.200 (5.08)
0.115 (2.92)
0.004 (0.10)
MIN
0.270 (6.86)
0.240 (6.10)
0.400 (10.16)
TYP
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
NOTE
All dimensions are in inches (millimeters)
4/13/00 200024D
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Junction Temperature T
J
125 °C
Total Device Power Dissipation @ TA= 25°CP
D
250 mW
EMITTER
I
F
100 mA
DC/Average Forward Input Current
Reverse Input Voltage V
R
5.0 V
Forward Current - Peak (1µs pulse, 300pps) IF(pk) 3.0 A
LED Power Dissipation @ TA= 25°C
P
D
140 mW
Derate above 25°C 1.33 mW/°C
DETECTOR
V
CEO
50 V
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A) V
CBO
70 V
Emitter-Collector Voltage V
ECO
7V
Continuous Collector Current I
C
100 mA
Detector Power Dissipation @ TA= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
ABSOLUTE MAXIMUM RATINGS
1
2
3NC
CNX82A.W
SL5582.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
SCHEMATIC
6NC
5
4
6
1
2
3NC
CNX83A.W
SL5583.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
1
6
5
4
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
4/13/00 200024D
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7352417
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
ALL 1.2 1.50 V
Input Forward Voltage
Reverse Leakage Current (VR= 5.0 V) I
R
ALL 0.001 10 µA
DETECTOR
(I
C
= 1.0 mA, IF= 0) BV
CEO
ALL 50 100 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(I
C
= 100 µA, IF= 0) BV
CBO
CNX83A.W
70 120 V
SL5583.W
Emitter-Collector Breakdown Voltage (IE= 100 µA, IF= 0) BV
ECO
ALL 7 10 V
(VCE= 10 V, IF= 0) ALL 0.001 0.050
CNX82A.W
0.5 10
(V
CE
= 10 V, IF= 0) CNX83A.W
Collector-Emitter Dark Current (T
A
= 70°C) I
CEO
SL5582.W
0.5
µA
SL5583.W
(V
CE
= 10 V, IF= 0) SL5582.W
50
(T
A
= 100°C) SL5583.W
Collector-Base Dark Current (VCB= 10 V) I
CBO
CNX83A.W
20 nA
SL5583.W
Capacitance (VCE= 0 V, f = 1 MHz) C
CE
ALL 8 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
Note
** Typical values at TA= 25°C
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