QT CNW85, CNW84, CNW83, CNW82 Datasheet
DESCRIPTION
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist
of a GaAs infrared emitting diode which is optically coupled to an
NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for
improved noise immunity.
FEATURES
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage,
making the device suitable for use with TTL integrated
circuits.
• High degree of AC and DC insulation (5900 V (RMS) and
8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and
detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external
creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
WIDE BODY, HIGH ISOLATION
OPTOCOUPLERS
CNW82
CNW83
CNW84
CNW85
1/18/00 200015A
Parameter Symbol Value Units
EMITTER
I
F
100 mA
Forward Current - Continuous
Forward Current - Peak (PW = 100µs, 120pps) IF(pk)
3A
Reverse Voltage V
R
5V
Total Power Dissipation @ TA= 25°C
P
D
200 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
I
C
100 mA
Collector Current-Continuous
Emitter-Collector Voltage V
ECO
7V
Collector-Emitter Voltage
(CNW82/CNW83)
V
CEO
50
V
(CNW84/CNW85)
80
Collector-Base Voltage (CNW83)
V
CBO
70
V
(CNW85) 120
Total Power Dissipation @ TA= 25°C
P
D
200 mW
Derate above 25°C 2.0 mW/°C
TOTAL DEVICE
T
stg
-55 to 150 °C
Storage Temperature Range
Ambient Operating Temperature Range
T
A
-40 to 100
°C
Lead Soldering Temperature
T
L
260 °C
(1/16” from case, 10 sec. duration)
ABSOLUTE MAXIMUM RATINGS
6
1
6
1
SCHEMATIC
1
2
3NC
CNW82/84
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
6NC
5
4
1
2
3NC
CNW83/85
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
5
4
NOTE:
1. Every product is tested with pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together.
1/18/00 200015A
CNW82, CNW83, CNW84, CNW85
WIDE BODY, HIGH ISOLATION
OPTOCOUPLERS
Parameter Test Conditions Symbol Min Typ Max Unit
EMITTER
(I
F
= 10 mA) V
F
— 1.20 1.50 V
Input Forward Voltage
Reverse Leakage Current (VR= 5.0 V) I
R
——
10 µA
DETECTOR
(CNW82/83)
(I
C
= 1.0 mA) BV
CEO
50
100 —
V
Collector-Emitter Breakdown Voltage
(CNW84/85)
80 100
—
Emitter-Collector Breakdown Voltage (IE= 0.1 mA) BV
ECO
7
10 —
V
Collector-Base Breakdown Voltage
(CNW83)
(I
C
= 0.1 mA) BV
CBO
70 100 —
V
(CNW85) 120 140 —
Collector-Emitter Dark Current
(T
A
= 25°C)
(V
CE
= 10 V, IF= 0) I
CEO
— 1
50 nA
(TA= 70°C)
—
0.1 10 µA
Collector-Base Cut-off Current
(CNW83/85)
(VCB= 10 V, IF= 0) I
CBO
——20
nA
COUPLED
(I
C
= 4 mA, IF= 10 mA) V
CE(sat)
— 0.15 0.4 V
Collector-Emitter Saturation Voltage
Isolation Voltage
(DC Value) (t= 1.0 min.)
(1)
V
ISO
8.34 ——
kV
(RMS Value) (t= 1.0 min.)
(1)
5.9 ——
Isolation Resistance (V
I-O
= 500 V) R
ISO
110— T!
Isolation Capacitance (V
I-O
= 0, f = 1.0 MHz) C
ISO
— 0.4 1 pF
Current Transfer Ratio
(CNW82/83) (
I
F
= 10 mA, VCE= 0.4 V
)
CTR
0.4 0.8
—
%
(CNW84/85) (
I
F
= 10 mA, VCE= 5 V
) 0.63 1.5 3.2
Capacitance (CNW83/85) (VCB= 10 V, f = 1 MHz)
C
CB
— 4.5 — pF
Turn-on Time
(I
C
= 2 mA, VCC= 5 V, RL= 100 !)
T
ON
— 3 —
µs
(I
C
= 2 mA, VCC= 5 V, RL= 1 k!) — 12 —
Turn-off Time
(I
C
= 2 mA, VCC= 5 V, RL= 100 !)
T
OFF
— 3 —
µs
(I
C
= 2 mA, VCC= 5 V, RL= 1 k!) — 12 —
ELECTRICAL CHARACTERISTICS
(TA=25°C Unless otherwise specified)
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