QT 4N33, 4N32 Datasheet
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
4N29 4N30 4N31 4N32 4N33
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ TA= 25°C
P
D
250 mW
Derate above 25°C 3.3 mW/°C
EMITTER
I
F
80 mA
Continuous Forward Current
Reverse Voltage V
R
3V
Forward Current - Peak (300 µs, 2% Duty Cycle) IF(pk) 3.0 A
LED Power Dissipation @ TA= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
BV
CEO
30 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage BV
CBO
30 V
Emitter-Collector Breakdown Voltage BV
ECO
5V
Detector Power Dissipation @ TA= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
Continuous Collector Current I
C
150 mA
4/25/00 200038B
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)
SCHEMATIC
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C Unless otherwise specified.)
ANODE
CATHODE
1
2
3
N/C
BASE
6
COLLECTOR
5
4
EMITTER
4/25/00 200038B
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
Parameter Test Conditions Symbol Min Typ Max Unit
EMITTER
(I
F
= 10 mA) V
F
1.2 1.5 V
*Input Forward Voltage
*Reverse Leakage Current (VR= 3.0 V) I
R
0.001 100 µA
*Capacitance (VF= 0 V, f = 1.0 MHz) C 150 pF
DETECTOR
(I
C
= 100 µA, IB= 0) BV
CEO
30 60
V
*Collector-Emitter Breakdown Voltage
*Collector-Base Breakdown Voltage (IC= 100 µA, IE= 0) BV
CBO
30 100 V
*Emitter-Collector Breakdown Voltage (IE= 100 µA, IB= 0) BV
ECO
5.0 8 V
*Collector-Emitter Dark Current (VCE= 10 V, Base Open) I
CEO
1 100 nA
DC Current Gain (VCE= 5.0 V, IC= 500 µA) h
FE
5000
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
DC Characteristic Test Conditions Symbol Min Typ Max Units
*Collector Output Current
(1,2)
(4N32, 4N33) 50 (500)
(4N29, 4N30) (I
F
= 10 mA, VCE= 10 V, IB = 0) IC (CTR) 10 (100) mA (%)
(4N31) 5 (50)
*Saturation Voltage
(2)
(4N29, 4N30, 4N32, 4N33)
(I
F
= 8.0 mA, IC= 2.0 mA) V
CE(sat)
1.0
V
(4N31) 1.2
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ Max Units
Input-Output Isolation Voltage
(6)
(I
I-O
61 µA, Vrms, t = 1 min.) 5300 Vac(rms)
(4N29, 4N30, 4N31, 4N32, 4N33)
V
ISO
*(4N32) VDC 2500
V
*(4N33) VDC 1500
Isolation Resistance
(6)
(V
I-O
= 500 VDC) R
ISO
10
11
1
Isolation Capacitance
(6)
(V
I-O
= , f = 1 MHz) C
ISO
0.8 pf
ISOLATION CHARACTERISTICS
AC Characteristic Test Conditions Symbol Min Typ Max Units
Turn-on Time
(3)
(IF= 200 mA, IC= 50 mA, VCC= 10 V)
t
on
5.0
Turn-off Time
(3)
(4N32, 4N33)
(Fig.7) t
off
100 µs
(4N29, 4N30, 4N31) 40
Bandwidth
(4,5)
BW 30 KHz
TRANSFER CHARACTERISTICS
4N29 4N30 4N31 4N32 4N33
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