QORVO UJ3D1205TS Datasheet

Gen-III | 5A - 1200V SiC Schottky Diode | UJ3D1205TS .

Datasheet .

Description

Features Typical Applications

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Power converters

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Industrial motor drives

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Switching-mode power supplies

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Power factor correction modules

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AEC-Q101 qualified

Maximum Ratings

Symbol Units

V

R

V

V

RRM

V

V

RSM

V

I

F

A

T

J,max

°C

TJ, T

STG

°C

T

sold

°C

W

Maximum junction temperature

1.6mm from case for
10s

260
136

13

Operating and storage temperature

Soldering temperatures, wavesoldering only
allowed at leads

-55 to 175

31.8

Repetitive forward surge current
sine halfwave, D=0.1

I

FRM

P

Tot

TC = 25°C

Non-repetitive peak forward current

I

F,max

Power dissipation

TC = 160.7°C

175

i2t value

i2dt

TC = 25°C, tp =10ms

24.5

United Silicon Carbide, Inc. offers the 3rd generation of high
performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse
recovery charge and 175°C maximum junction temperature, these
diodes are ideally suited for high frequency and high efficiency power
systems with minimum cooling requirements.

Parameter

DC blocking voltage

Repetitive peak reverse voltage, Tj=25°C

Extremely fast switching not dependent on temperature

No reverse or forward recovery

Enhanced surge current capability, MPS structure

175°C maximum operating junction temperature

Easy paralleling

Excellent thermal performance, Ag sintered

100% UIS tested

1200

1200

70

5

TC = 160.7°C

TC = 25°C, tp = 10ms

Value

1200

Test Conditions

A2s

TC = 110°C, tp =10ms

19.5

Maximum DC forward current

Non-repetitive forward surge current
sine halfwave

I

FSM

TC = 25°C, tp =10ms

TC = 25°C, tp = 10ms

Surge peak reverse voltage

A

TC = 110°C, tp =10ms

63

A

TC = 110°C, tp =10ms

18.6

A

TC = 110°C, tp =10ms

525

525

UJ3D1205TS

TO-220-2L

UJ3D1205TS

Part Number

Package

Marking

1

2

CASE

2

1

CASE

1 For more information go to www.unitedsic.com.

Rev. B, January 2018

Gen-III | 5A - 1200V SiC Schottky Diode | UJ3D1205TS .

Datasheet .

Electrical Characteristics

TJ = +25°C unless otherwise specified

Min Typ Max

- 1.4 1.6

- 1.85 2.3

- 2 2.6

- 40 210

- 400

Q

C

27 nC

250

24.5

22

E

C

8

mJ

(1)

Qc is independent on Tj, diF/dt, and IF as shown in the application note USCi_AN0011.

Thermal characteristics

Min Typ Max

R

qJC

0.85 1.1 °C/W

Typical Performance

Figure 1 Typical forward characteristics

VR=800V, f=1MHz

Reverse current

VR=800V

Total capacitive charge

(1)

VR=1200V, Tj=25°C

I

R

Forward voltage

V

F

Figure 2 Typical forward characteristics in surge
current

mA

VR=1V, f=1MHz

C

V

Units

Value

IF = 5A, TJ =175°C

Parameter

Symbol

Test Conditions

Value

Units

pF

Capacitance stored energy

IF = 5A, TJ = 25°C

Parameter

VR=400V, f=1MHz

Thermal resistance, junction - case

symbol

Test Conditions

VR=800V

Total capacitance

VR=1200V, TJ=175°C

IF = 5A, TJ =150°C

0

5

10

15

20

25

30

35

40

0 1 2 3 4 5 6

Forward Current, I

F

(A)

Forward Voltage, VF (V)

- 55°C
25°C
100°C
150°C
175°C

0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4

Forward Current, I

F

(A)

Forward Voltage, VF (V)

- 55°C
25°C
100°C
150°C

175°C

2 For more information go to www.unitedsic.com.

Rev. B, January 2018

Gen-III | 5A - 1200V SiC Schottky Diode | UJ3D1205TS .

Datasheet .

Figure 3 Typical reverse characteristics Figure 4 Power dissipation

Figure 5 Diode forward current Figure 6 Maximum transient thermal impedance

0

25

50

75

100

125

150

25 50 75 100 125 150 175

Power Disspiation, P

Tot

(W)

TC (°C)

0

10

20

30

40

50

60

70

80

25 50 75 100 125 150 175

Forward Current, I

F

(A)

TC (°C)

D = 0.1
D = 0.3
D = 0.5
D = 0.7
D = 1.0

0.01

0.1

1

1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01

Max. Thermal Impedance, Z

qJC

(°C/W)

Time , t (s)

D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
Single Pulse

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

500 600 700 800 900 1000 1100 1200

Reverse Current, I

R

(A)

Reverse Voltage, VR (V)

- 55°C
25°C

125°C
175°C

10

-3

10

-4

10

-5

10

-6

10

-7

3 For more information go to www.unitedsic.com.

Rev. B, January 2018

Gen-III | 5A - 1200V SiC Schottky Diode | UJ3D1205TS .

Datasheet .

Figure 8 Typical capacitive charge vs. reverse
voltage

Figure 9 Typical capacitance stored energy
vs. reverse voltage

Figure 7 Capacitance vs. reverse voltage at
1MHz

0

50

100

150

200

250

300

350

0.1 1 10 100 1000

Capacitance, C (pF)

Reverse Voltage, VR (V)

0

2

4

6

8

10

12

14

16

18

0 200 400 600 800 1000 1200

E

C

(mJ)

Reverse Voltage, VR (V)

0

5

10

15

20

25

30

35

40

0 200 400 600 800 1000 1200

Q

C

(nC)

Reverse Voltage, VR (V)

QC =   







4 For more information go to www.unitedsic.com.

Rev. B, January 2018

Gen-III | 5A - 1200V SiC Schottky Diode | UJ3D1205TS .

Datasheet .

Disclaimer

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the
United Silicon Carbide, Inc. products and services described herein.

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent
physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no
responsibility or liability for any errors or inaccuracies within.

Information on all products and contained herein is intended for description only. No license, express or
implied, to any intellectual property rights is granted within this document.

5 For more information go to www.unitedsic.com.

Rev. B, January 2018