QORVO UJ3C120080K3S Datasheet

80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Description

Features

Typical Applications

w w

EV charging

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PV inverters

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Switch mode power supplies

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Power factor correction modules

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Motor drives

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Induction heating

Maximum Ratings

Symbol Units

V

DS

V

V

GS

V

A
A

I

DM

A

E

AS

mJ

P

tot

W

T

J,max

°C

TJ, T

STG

°C

T

L

°C

1

Limited by T

J,max

2

Pulse width tp limited by T

J,max

3

Starting TJ = 25°C

United Silicon Carbide's cascode products co-package its high­performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads, and any application requiring
standard gate drive.

Typical on-resistance R

DS(on),typ

of 80mW

Excellent reverse recovery

Continuous drain current

1

I

D

ESD protected, HBM class 2

Maximum operating temperature of 175°C

Low intrinsic capacitance

Low gate charge

Single pulsed avalanche energy

3

L=15mH, IAS =2.8A

Power dissipation

TC=25°C

Value

1200

33

DC

TC=25°C

Drain-source voltage

TC=100°C

Parameter

Test Conditions

TC=25°C

Pulsed drain current

2

77

-25 to +25

Gate-source voltage

24

Max. lead temperature for soldering,

1/8” from case for 5 seconds

250

58.5

254.2

-55 to 175

175

Operating and storage temperature

Maximum junction temperature

UJ3C120080K3S

TO-247-3L UJ3C120080K3S

Part Number Package Marking

3

CASE

1

2

CASE

D (2)

S (3)

G (1)

Rev. C, December 2018

1

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Electrical Characteristics (TJ = +25°C unless otherwise specified)

Typical Performance - Static

Min Typ Max

BV

DS

1200 V

10 75

50

I

GSS

6 20

mA

80 100

172

V

G(th)

4 5 6 V

R

G

4.5

W

Typical Performance - Reverse Diode

Min Typ Max

I

S

33 A

I

S,pulse

77 A

1.5 2

2

Q

rr

180 nC

t

rr

30 ns

Reverse recovery charge

VR=800V, IF=20A,

VGS=0V, R

G_EXT

=10W

di/dt=2200A/ms,

TJ=150°C

Reverse recovery time

VDS=1200V,

VGS=0V, TJ=25°C

Parameter

Symbol

Test Conditions

Total gate leakage current

VDS=5V, ID=10mA

Gate threshold voltage

Gate resistance

f=1MHz, open drain

Drain-source on-resistance

R

DS(on)

VGS=12V, ID=20A,

TJ=25°C

Drain-source breakdown voltage

VGS=0V, ID=1mA

I

DSS

Total drain leakage current

mA

VDS=1200V,

VGS=0V, TJ=175°C

VDS=0V, Tj=25°C,
VGS=-20V / +20V

VGS=12V, ID=20A,

TJ=175°C

Units

Value

Parameter

Symbol

Test Conditions

mW

Value

Units

Diode continuous forward current

1

TC=25°C

Diode pulse current

2

TC=25°C

Forward voltage

V

FSD

VGS=0V, IF=10A,

TJ=25°C

V

VGS=0V, IF=10A,

TJ=175°C

Rev. C, December 2018

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Typical Performance - Dynamic

Min Typ Max

C

iss

1500

C

oss

100

C

rss

2.1

C

oss(er)

59 pF

C

oss(tr)

136 pF

E

oss

19

mJ

Q

G

51

Q

GD

11

Q

GS

19

t

d(on)

22

t

r

14

t

d(off)

61

t

f

14

E

ON

260

E

OFF

108

E

TOTAL

368

Thermal Characteristics

Min Typ Max

R

qJC

0.45 0.59 °C/W

C

OSS

stored energy

VDS=800V, VGS=0V

Effective output capacitance, time related

VDS=0V to 800V,

VGS=0V

Effective output capacitance, energy related

VDS=0V to 800V,

VGS=0V

Parameter

symbol

Test Conditions

Value

Units

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS=100V,

VGS=0V,

f=100kHz

pF

Gate-source charge

Rise time

mJ

Total switching energy

nC

Turn-on delay time

ns

Total gate charge

Gate-drain charge

VDS=800V, ID=20A,

VGS=-5V to 15V

VDS=800V, ID=20A, Gate

Driver =-5V to +15V,

Turn-on R

G,EXT

=1W,

Turn-off R

G,EXT

=20W

Inductive Load,

FWD: UJ2D1215T

TJ=150°C

Thermal resistance, junction-to-case

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Parameter

symbol

Test Conditions

Value

Units

Rev. C, December 2018

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Typical Performance Diagrams

Figure 1 Typical output characteristics Figure 2 Typical output characteristics

at TJ = - 55°C, tp < 250ms at TJ = 25°C, tp < 250ms

Figure 3 Typical output characteristics Figure 4 Normalized on-resistance vs.

at TJ = 175°C, tp < 250ms temperature at V

GS

= 12V and

ID = 20A

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7 8 9 10

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

Vgs = 15V
Vgs = 8V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7 8 9 10

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

Vgs = 15V
Vgs = 8V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7 8 9 10

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

Vgs = 15V
Vgs = 8V
Vgs = 7V

Vgs = 6V

Vgs = 5.5V
Vgs = 5V

0.0

0.5

1.0

1.5

2.0

2.5

-75 -50 -25 0 25 50 75 100 125 150 175

On Resistance, R

DS_ON

(P.U.)

Junction Temperature, TJ(°C)

Rev. C, December 2018

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Figure 5 Typical drain-source Figure 6 Typical transfer characteristics

on-resistance at VGS = 12V at V

DS

= 5V

Figure 7 Threshold voltage vs. T

J

Figure 8 Typical gate charge

at V

DS

= 5V and ID = 10mA at V

DS

= 800V and ID = 20A

-5

0

5

10

15

20

0 10 20 30 40 50 60

Gate-Source Voltage, V

GS

(V)

Gate Charge, QG(nC)

0

50

100

150

200

250

300

0 10 20 30 40 50 60

On-Resistance, R

DS(on)

(mW)

Drain Current, ID(A)

Tj = 175°C
Tj = 25°C
Tj = - 55°C

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7 8 9 10

Drain Current, I

D

(A)

Gate-Source Voltage, VGS(V)

Tj = -55°C
Tj = 25°C
Tj = 175°C

0

1

2

3

4

5

6

-100 -50 0 50 100 150 200

Threshold Voltage, V

th

(V)

Junction Temperature, TJ(°C)

Rev. C, December 2018

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Figure 9 3rd quadrant characteristics Figure 10 3rd quadrant characteristics

at TJ = - 55°C at TJ = 25°C

Figure 11 3rd quadrant characteristics

Figure 12 Typical stored energy in C

OSS

at TJ = 175°C at V

GS

= 0V

0

10

20

30

40

0 200 400 600 800 1000 1200

E

OSS

(mJ)

Drain-Source Voltage, VDS(V)

-30

-25

-20

-15

-10

-5

0

-4 -3 -2 -1 0

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

Vgs = -5V
Vgs = 0V
Vgs = 5V
Vgs = 8V

-30

-25

-20

-15

-10

-5

0

-4 -3 -2 -1 0

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

Vgs = - 5V
Vgs = 0V
Vgs = 5V
Vgs = 8V

-30

-25

-20

-15

-10

-5

0

-4 -3 -2 -1 0

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

Vgs = - 5V
Vgs = 0V
Vgs = 5V
Vgs = 8V

Rev. C, December 2018

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Figure 13 Typical capacitances at 100kHz Figure 14 DC drain current derating

and V

GS

= 0V

Figure 15 Total power dissipation Figure 16 Maximum transient thermal impedance

0

50

100

150

200

250

300

-75 -50 -25 0 25 50 75 100 125 150 175

Power Dissipation, P

tot

(W)

Case Temperature, TC(°C)

0

5

10

15

20

25

30

35

-75 -50 -25 0 25 50 75 100 125 150 175

DC Drain Current, I

D

(A)

Case Temperature, TC(°C)

1

10

100

1000

10000

0 200 400 600 800 1000 1200

Capacitance, C (pF)

Drain-Source Voltage, VDS(V)

C

iss

C

oss

C

rss

0.001

0.01

0.1

1

1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01

Thermal Impedance, Z

qJC

(°C/W)

Pulse Time, tp(s)

D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Figure 17 Safe operation area Figure 18 Clamped inductive switching energy

Tc = 25°C, D = 0, Parameter t

p

vs. drain current at TJ = 150°C

Figure 19 Clamped inductive switching Figure 20 Clamped inductive switching

turn-on energy vs. R

G,EXT_ON

turn-off energy vs. R

G,EXT_OFF

0

100

200

300

400

500

600

700

800

900

0 5 10 15 20 25 30 35

Switching Energy (

mJ)

Drain Current, ID(A)

Etot
Eon

Eoff

VDD= 800V, VGS= -5V/15V

R

G_ON

= 1W, R

G_OFF

= 20W

FWD: UJ2D1215T

TJ= 150°C

0

100

200

300

400

500

0 5 10 15 20

Turn-on Energy, Eon (

mJ)

Total External RG, R

G,EXT_ON

(W)

VDD= 800V, VGS= -5V/15V
ID= 20A, TJ= 150°C
FWD:UJ2D1215T

0

50

100

150

200

250

300

0 20 40 60 80 100

Turn-Off Energy, Eoff (

mJ)

Total External RG, R

G,EXT_OFF

(W)

VDD= 800V, VGS= -5V/15V
ID= 20A, TJ= 150°C

FWD: UJ2D1215T

0.1

1

10

100

1 10 100 1000

Drain Current, I

D

(A)

Drain-Source Voltage, VDS(V)

1ms

10ms

100ms

1ms

DC

10ms

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80mW - 1200V SiC Cascode | UJ3C120080K3S

Datasheet

Figure 21 Clamped inductive switching energy

vs. junction temperature at ID = 20A

Applications Information

Disclaimer

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc.
products and services described herein.

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical
specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies
within.

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual
property rights is granted within this document.

SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon
MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the
off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior
performance in terms of low on-resistance (R

DS(on)

), output capacitance (Coss), gate charge (Qg), and reverse recovery charge (Qrr)

leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction capability eliminating
the need for an external anti-parallel diode.

Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due
to the high dv/dt and di/dt rates. An external gate resistor is recommended when the cascode is working in the diode mode in order
to achieve the optimum reverse recovery performance. For more information on cascode operation, see www.unitedsic.com.

0

100

200

300

400

500

0 25 50 75 100 125 150 175

Switching Energy (

mJ)

Junction Temperature, TJ(°C)

Etot
Eon
Eoff

VDD= 800V, VGS= -5V/15V

R

G_ON

= 1W, R

G_OFF

= 20W

Rev. C, December 2018

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