PYRAMID PYX28C64 Technical data

1

Document # EEPROM101 REV B

Revised July 2007

FEATURES

Access Times of 200, 250, 300 and 350 ns
Single 5V±10% Power Supply

Simple Byte and Page Write
Low Power CMOS:

- 60 mA Active Current

- 200 µA Standby Current

Fast Write Cycle Times

PYX28C64
8K x 8 EEPROM

DESCRIPTION

The PYX28C64 is a 5 Volt 8Kx8 EEPROM using floating
gate CMOS Technology. The device supports 64-byte
page write operation. The PYX28C64 features DATA and
Toggle Bit Polling as well as a system software scheme
used to indicate early completion of a Write Cycle. The
device also includes user-optional software data protec­tion. Endurance is 10,000 or 100,000 Cycles and Data
Retention is 100 Years. The device is available in a 32-Pin
LCC package as well as a 28-Pin 600 mil wide Ceramic
DIP.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

1519B

DIP (C5-1)

LCC (L6)

Software Data Protection
Fully TTL Compatible Inputs and Outputs
Endurance: 10,000 or 100,000 Cycles
Data Retention: 100 Years
Available in the following Packages:

– 32-Pin Ceramic LCC (450 x 550 mils)
– 28-Pin 600 mil Ceramic DIP

查询PYX28C64-20L32M供应商

PYX28C64

Page 2 of 11Document # EEPROM101 REV B

MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

V

CC

Power Supply Pin with –0.3 to +6.25 V
Respect to GND

Terminal Voltage with –0.5 to

V

TERM

Respect to GND +6.25 V
(up to 6.25V)

T

A

Operating Temperature –55 to +125 ° C

Symbol Parameter Value Unit

T

BIAS

Temperature Under –55 to +125 ° C
Bias

T

STG

Storage Temperature –65 to +150 ° C

P

T

Power Dissipation 1. 0 W

I

OUT

DC Output Current 50 mA

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

I

SB

Standby Power Supply
Current (TTL Input Levels)

CE ≥ VIH, OE = VIL,
VCC= Max,
f = Max., Outputs Open

___ 3

250

mA

µA___

CE ≥ VHC,
VCC= Max,
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ V

HC

Standby Power Supply
Current
(CMOS Input Levels)

I

SB1

Grade

(2)

Ambient

Temperature

GND

V

CC

0V

5.0V ± 10%

–55°C to +125°C

Military

Symbol

C

IN

C

OUT

Parameter

Input Capacitance
Output Capacitance

Conditions

VIN = 0V

V

OUT

= 0V

10
10

Unit

pF

pF

CAPACITANCES

(4)

VCC = 5.0V, TA = 25°C, f = 1.0MHz

Symbol

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage

(2)

V

IH

V

IL

V

HC

V

LC

V

OL

V

OH

I

LI

I

LO

Parameter

Input High Voltage
Input Low Voltage
CMOS Input High Voltage

CMOS Input Low Voltage
Output Low Voltage

(TTL Load)
Output High Voltage

(TTL Load)

Input Leakage Current

Output Leakage Current

Test Conditions

IOL = +8 mA, VCC = Min.

IOH = –4 mA, VCC = Min.
VCC = Max.

VIN = GND to V

CC

VCC = Max., CE = VIH,
V

OUT

= GND to V

CC

P5C164

Min

2.0

–0.5

(3)

VCC –0.2

–0.5

(3)

2.4

–10

–10

VCC +0.3

0.8

VCC +0.5

0.2

0.4

+10

+10

Max

Unit

V
V
V

V
V

V

µA

µA

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.

3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

Typ.

60 mA___

CE = OE = VIL,
WE = VIH,

All I/O's = Open,
Inputs = VCC = 5.5V

Supply Current

I

CC

PYX28C64

Page 3 of 11Document # EEPROM101 REV B

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(VCC = 5V ± 10%, All Temperature Ranges)

(2)

Min Max Min Max Min Max Min Max

t

AVAV

Read Cycl e Time 200 250 300 350 n s

t

AVQV

Address Acces s Time 200 250 300 350 ns

t

ELQV

Chip Enable Access T ime 200 250 300 350 ns

t

OLQV

Outpu t Enabl e Access Time 100 100 100 100 ns

t

ELQX

Chip Enable to Output in Low Z10101010ns

t

EHQZ

Chip Disable to Output in High Z 80808080ns

t

OLQX

Output Enable to Output in Low Z 10 10 10 10 ns

t

OHQZ

Outpu t Disable to Output in High Z 80 80 80 80 ns

t

AVQX

Output Hold from Address Change0000ns

t

PU

Chip Enable t o Power U p T ime 250 250 250 250 ns

t

PD

Chip Disabl e t o Pow er Down T im e 50 50 50 50 ns

-300 -350
UnitSymbol Parameter

-200 -250

TIMING WAVEFORM OF READ CYCLE

PYX28C64

Page 4 of 11Document # EEPROM101 REV B

AC CHARACTERISTICS—WRITE CYCLE

(VCC = 5V ± 10%, All Temperature Ranges)

(2)

Min Max Min Max Min Max Min Max

t

WHWL1

t

EHEL1

Writ e Cycl e Time 10 10 10 10 ms

t

AVEL

t

AVWL

Address Setup Time 20 20 20 20 ns

t

ELAX

t

WLAX

Address Hold Time 150 150 150 150 ns

t

WLEL

t

ELWL

Write Setup Time 0000ns

t

WHEH

Write Hold Time 0000ns

t

OHE L

t

OHWL

OE

Setup Time 20 20 20 20 ns

t

WHOL

OE

Hol d Time 20 20 20 20 ns

t

ELEH

t

WLWH

WE

Pulse Width 150 150 150 150 ns

t

DVEH

t

DVWH

Data Setup T im e 50 50 50 50 ns

t

EHDX

t

WHDX

Data Hold T ime 10 10 10 10 ns

t

EHEL2

t

WHWL2

Byte Load Cy cl e T im e 0.2 2 0. 2 2 0.2 2 0.2 2 µs

t

ELWL

CE

Setup Time 1111µs

t

OVHWL

Output Setup Time 1111µs

t

EHWH

CE

Hold Time 1111µs

t

WHOH

OE

Hold Time 1111µs

t

OHAV

Erase Time 200 200 200 200 ms

t

WLWH2

Chip Erase Time 150 150 150 150 ns

V

H

High Voltage for Chip Clear 1213121312131213V

-300 -350
UnitSymbol Parameter

-200 -250