PYRAMID PY264 Technical data

1

Document # EPROM102 REV OR

Revised July 2007

PY264
8K X 8 REPROGRAMMABLE PROM

DESCRIPTION

The PY264 is an 8Kx8 CMOS PROM. The device is
available in windowed packages which when exposed to
UV light, the memory content in the PROM is erased and
can be reprogrammed. EPROM technology is used in
the memory cells for programming. The EPROM re­quires a 12.5V for programming. Devices are tested to
insure that performance of the device meets the DC and
AC specification limits after customer programming.

To perform a read operation from the device, CS is LOW.
The memory contents in the address established by the
Address pins (A0 to A12) will become available on the
outputs (O0 to O7).

The PY264 is available in 24-pin 600 mil Ceramic DIPs
(Windowed) and Plastic DIPs (Non-Windowed).

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

FEATURES

EPROM Technology for reprogramming
High Speed

– 35/45/55 ns (Commercial)
– 35/45/55 ns (Military)

Low Power Operation:
– 660 mW Commercial
– 770 mW Military

Single 5V±10% Power Supply
Windowed devices for reprogramming
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved):

– 24-Pin 600 mil Windowed CERDIP
– 24-Pin 600 mil Non-Windowed Plastic DIP

DIP (P8, WD2)

Note: Window on

WD2 package only

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PY264

Page 2 of 8Document # EPROM102 REV OR

MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

V

CC

Power Supply Pin with –0.5 to +7 V
Respect to GND

Terminal Voltage with –0.5 to

V

TERM

Respect to GND VCC +0.5 V
(up to 7.0V)

V

PP

Program Voltage 13 V

Symbol Parameter Value Unit

T

A

Operating Temperature –55 to +125 °C

T

BIAS

Temperature Under –55 to +125 °C
Bias

T

STG

Storage Temperature –65 to +150 °C

P

T

Power Dissipation 1.0 W

I

OUT

DC Output Current 50 mA

Symbol Parameter Conditions Typ. Unit

C

IN

Input Capacitance VIN = 0V 10 pF

C

OUT

Output Capacitance V

OUT

= 0V 10 pF

Grade

(2)

Ambient Temp Gnd Vcc

Commercial 0°C to 70°C 0V 5.0V ±10%
Military -55°C to +125°C 0V 5.0V ±10%

RECOMMENDED OPERATING CONDITIONS

CAPACITANCES

(4)

(VCC = 5.0V, TA = 25°C, f = 1.0MHz)

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage

(2)

V

PP

Programming Supply Voltage 12 13

50

V

mA

Programming Supply Current I

PP

Symbol

V

IH

V

IL

V

HC

V

LC

V

OL

V

OH

I

LI

I

LO

Parameter

Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage

Output Low Voltage (TTL Load)

Output High Voltage (TTL Load)

Input Leakage Current

Output Leakage Current

Test Conditions

IOL = +16 mA, VCC = Min.
IOH = –4 mA, VCC = Min.

VCC = Max.
VIN = GND to V

CC

VCC = Max., CE = VIH,
V

OUT

= GND to V

CC

PY264

Min

2.0

–0.5

(3)

VCC –0.2

–0.5

(3)

2.4

–10

–10

Max

V

CC

0.8

VCC +0.5

0.2

0.4

+10

+10

Unit

V
V
V

V

V
V

µA

µA

I

CC

Symbol Parameter Temperature Range

Dynamic Operating Current*

Commercial
Military

–35 –55 Unit

mA
mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

120 120 120

100 100 100

–45

V

IHP

Input HIGH Programming Voltage 4.75

V

V

ILP

Input LOW Programming Voltage

0.4 V

COM

–40 +40

µA

MIL

PY264

Page 3 of 8Document # EPROM102 REV OR

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(VCC = 5V ± 10%, All Temperature Ranges)

(2)

TIMING WAVEFORM OF READ CYCLE

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.

3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

Min Max Min Max Min Max

t

AA

Addres s to Output V ali d 35 45 55 ns

t

HZCS1

Chip Select Inactive to High Z 20 30 35 ns

t

ACS1

Chip Select Active to Output Valid 20 30 35 ns

t

HZCS2

Chip Select Inactive to High Z 35 45 55 ns

t

ACS2

Chip Select Active to Output Valid 35 45 55 ns

t

PU

Chip Select Active to Power-Up 0 0 0 ns

t

PD

Chip Slec t Inactive to Power-Down 35 45 55 ns

UnitSymbol Parame ter

-45-35 -55