POWERSEM PSD75-08, PSD75-12, PSD75-14, PSD75-16, PSD75-18 Datasheet

POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach, Germany www.powersem.net
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

POWE RSEM reserves the right to change li mits, test conditions and dimensions

Three Phase PSD 75 I

dAVM

= 95 A

Rectifier Bridges V

RRM

= 800-1800 V

Preliminary Data Sheet

V

RSM

V

V

RRM

V

Type

800 800 PSD 75/08
1200 1200 PSD 75/12
1400 1400 PSD 75/14
1600 1600 PSD 75/16
1800 1800 PSD 75/18

Symbol Test Conditions Maximum Ratings

I

dAV

TC = 85°C, module 95 A

I

FSM

TVJ = 45°C t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1100 A

TVJ = T

VJM

t = 10 ms (50 Hz), sine 850 A

VR = 0 t = 8.3 ms (60 Hz), sine 1000 A

∫ i2 dt

TVJ = 45°C t = 10 ms (50 Hz), sine 5000 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 5000 A2 s

TVJ = T

VJM

t = 10 ms (50 Hz), sine 4000 A2 s

VR = 0 t = 8.3 ms (60 Hz), sine 4100 A2 s

TVJ

-40 ... + 150 °C

T

VJM

150 °C

T

stg

-40 ... + 150 °C

V

ISOL

50/60 HZ, RMS t = 1 min 2500 V ∼
I

ISOL

≤ 1 mA t = 1 s 3000 V ∼

Md

Mounting torque (M5) 5 Nm
Terminal connection torque (M5) 5 Nm

Weight

typ. 225 g

Symbol Test Conditions Characteristic Value

IR

VR = V

RRM

T

VJ

= 25°C ≤ 0.3 mA

VR = V

RRM

T

VJ

= T

VJM

≤ 8.0 mA

VF

IF = 150 A TVJ = 25°C ≤ 1.6 V

VTO

For power-loss calculations only 0.8 V

rT

TVJ = T

VJM

6 mΩ

R

thJC

per Diode; DC current 1.28 K/W
per module 0.213 K/W

R

thJK

per Diode; DC current 1.38 K/W
per module 0.23 K/W

dS

Creeping distance on surface 14 mm

dA

Creeping distance in air 14 mm

a

Max. allowable acceleration 50 m/s2

Features

•

Package with screw terminals

•

Isolation voltage 3000 V∼

•

Planar glasspassivated chips

•

Blocking voltage up to 1800 V

•

Low forward voltage drop

•

UL registered E 148688

Applications

• S

upplies for DC power equipment

• I

nput rectifiers for PWM inverter

• B

attery DC power supplies

• F

ield supply for DC motors

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling

Package, style and outline

Dimensions in mm (1mm = 0.0394“)

PSD 75

1 1.5

0

40

80

120

160

200

I

F

V

F

A

V

T=150°C

T=25°C

0.4

0.6

0.8

1

1.2

1.4

1.6

10

0

10

1

10

2

10

3

t[ms]

I (A)

FSM

TVJ=45°C TVJ=150°C

1000 850

I

-----­I
FSM

F(OV)

0 V
RRM

1/2 V

RRM

1 V

RRM

2 4 6 10

TVJ=45°C

TVJ=150°C

t [ms]

1

10

10

3

4

As

2

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current
per diode I

FSM

: Crest value. t:

duration

Fig. 3 ∫i2dt versus time

(1-10ms) per diode (or thyristor)

7525

0

50

100

150

200

250

300

85

90

95

100

105

110

115

120

125

130

135

140

145

150

TC

°C

DC
sin.180°
rec.120°

rec.60°
rec.30°

1.79

0.79

0.45

0.29

0.2 0.12 = RTHCA [K/W]

IFAVM [A] Tamb [K]

0 50 100 150

[W]

PVTOT

PSD 75

Fig. 4 Power dissipation versus direct output current and ambient

temperature

50 100 150 200

0

20

40

60

80

100

DC
sin.180°

rec.120°

rec.60°
rec.30°

T (°C)
C

I
dAV

[A]

Fig.5 Maximum forward current

at case temperature

0.01 0.1 1 10

0.5

1

1.5

2

K/W

Z

th

t[s]

Z

thJK

Z

thJC

Fig. 6 Transient thermal impedance per diode (or Thyristor),

calculated