Power Innovations TISPL758LF3D, TISPL758LF3 DR Datasheet

TISPL758LF3D

INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE

PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES

PRODUCT INFORMATION

1

JANUARY 1998 - REVISED OCTOBER 1998Copyright © 1998, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

OVERVOLTAGE PROTECTION FOR LUCENT TECHNOLOGIES LCAS

● Symmetrical and Asymmetrical

Characteristics for Optimum Protection of
Lucent L7581/2/3 LCAS

● Rated for International Surge Wave Shapes

● Ion-Implanted Breakdown Region

Precise And Stable Voltage
Low Voltage Overshoot Under Surge

● Planar Passivated Junctions

Low Off-State Current<±10 µA

● Small Outline Surface Mount Package

- Available Ordering Options

description

The TISPL758LF3 is an integrated combination
of a symmetrical bidirectional overvoltage
protector and an asymmetrical bidirectional
overvoltage protector. It is designed to limit the
peak voltages on the line terminals of the Lucent
Technologies L7581/2/3 LCAS (Line Card
Access Switches). An LCAS may also be
referred to as a Solid State Relay, SSR, i.e. a
replacement of the conventional electro­mechanical relay.

The TISPL758LF3D voltages are chosen to give
adequate LCAS protection for all switch
conditions. The most potentially stressful

TERMINAL

PAIR

V

DRM

V

V

(BO)

V

T-G (SYMMETRICAL) ±105 ±130

R-G (ASYMMETRICAL) +105, -180 +130, -220

CUSTOMISED VERSIONS AVAILABLE

WAVE SHAPE STANDARD

I

TSP

A

2/10 µs GR-1089-CORE 175

8/20 µs ANSI C62.41 120
10/160 µs FCC Part 68 60
10/700 µs ITU-T K20/21 50
10/560 µs FCC Part 68 45

10/1000 µs GR-1089-CORE 35

CARRIER ORDER #

Tube TISPL758LF3D

Taped and reeled TISPL758LF3DR

condition is low level power cross when the
LCAS switches are closed. Under this condition,
the TISPL758LF3D limits the voltage and
corresponding LCAS dissipation until the LCAS
thermal trip operates and opens the switches.

Under open-circuit ringing conditions, the line
ring (R) conductor will have high peak voltages.
For battery backed ringing, the ring conductor
will have a larger peak negative voltage than
positive i.e. the peak voltages are asymmetric.
An overvoltage protector with a similar voltage
asymmetry will give the most effective protection.
On a connected line, the tip (T) conductor will
have much smaller voltage levels than the open­circuit ring conductor values. Here a symmetrical
voltage protector gives adequate protection.

Overvoltages are normally caused by a.c. power
system or lightning flash disturbances which are
induced or conducted on to the telephone line.
These overvoltages are initially clipped by
protector breakdown clamping until the voltage
rises to the breakover level, which causes the

device symbol

MDXXAE

D PACKAGE

(TOP VIEW)

1
2
3
4 5

6

7

8 G

G
G
G

NC

T

R

NC

NC - No internal connection

G

T R

SD3XAA

Terminals T, R and G correspond to the

alternative line designators of A, B and C

Support from the Microelectronics Group of Lucent Technologies Inc. is gratefully acknowledged in the definition of

the TISPL758LF3D voltage levels and for performing TISPL758LF3D evaluations.

TISPL758LF3D
INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE
PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES

2

JANUARY 1998 - REVISED OCTOBER 1998

PRODUCT INFORMATION

device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. For negative surges, the high crowbar holding current
prevents d.c. latchup with the SLIC current, as the surge current subsides. The TISPL758LF3 is guaranteed
to voltage limit and withstand the listed international lightning surges in both polarities.

These protection devices are supplied in a small-outline surface mount (D) plastic package. The difference
between the TISPL758LF3D and TISPL758LF3DR versions is shown in the ordering information.

absolute maximum ratings, T

A

= 25°C (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage R-G terminals

T-G terminals

V

DRM

-180, +105

-105, +105

V

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

I

TSP

A

2/10 µs(GR-1089-CORE, 2/10 µs voltage wave shape) 175
8/20 µs(ANSI C62.41, 1.2/50 µs voltage wave shape) 120
10/160 µs(FCC Part 68, 10/160 µs voltage wave shape) 60
5/200 µs(VDE 0433, 2.0 kV, 10/700 µs voltage wave shape) 50

0.2/310 µs(I3124, 2.0 kV, 0.5/700 µs voltage wave shape) 50
5/310 µs(ITU-T K20/21, 2.0 kV, 10/700 µs voltage wave shape) 50
5/310 µs(FTZ R12, 2.0 kV, 10/700 µs voltage wave shape) 50
10/560 µs(FCC Part 68, 10/560 µs voltage wave shape) 45
10/1000 µs(GR-1089-CORE, 10/1000 µs voltage wave shape) 35

Non-repetitive peak on-state current(see Notes 1, 2 and 3)

I

TSM

16
20

A

full sine wave 50 Hz

60 Hz

Repetitive peak on-state current, 50/60 Hz, (see Notes 2 and 3) I

TSM

2x1 A

Initial rate of rise of on-state current,Exponential current ramp, Maximum ramp value < 70 A di

T

/dt 150 A/µs

Junction temperature T

J

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

NOTES: 1. Above the maximum specified temperature, derate linearly to zero at 150°C lead temperature.

2. Initially the TISPL758LF3 must be in thermal equilibrium with 0°C < T

J

<70°C.

3. The surge may be repeated after the TISPL758LF3 returns to its initial conditions.

recommended operating conditions

MIN TYP MAX UNIT

R1 Series Resistor for GR-1089-CORE first-level surge, operational pass (4.5.7) 20

Ω

R1

Series Resistor for FCC Part 68 10/160 non-operational pass

10/160 operational pass
10/560 non-operational pass
10/560 operational pass

0

18

0

10

Ω

R1

Series Resistor for ITU-T K20/21 10/700, < 2 kV, operational pass

10/700, 4 kV, operational pass

0

40

Ω

3

JANUARY 1998 - REVISED OCTOBER 1998

TISPL758LF3D

INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE

PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES

PRODUCT INFORMATION

NOTES: 4. Positive and negative values of V

DRM

are not equal. See ratings table

5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.

electrical characteristics for the T-G and R-G terminal pairs, TJ = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS

VALUE

UNIT

MIN TYP MAX

I

DRM

Repetitive peak off­state current

V

D

= ±V

DRM

, (See Note 4) ±10 µA

V

(BO)

Breakover voltage dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω

R-G terminals

T-G terminals

-220

-130

+130
+130

V

V

(BO)

Impulse breakover volt­age

Rated impulse conditions with operational pass series
resistor

R-G terminals

T-G terminals

-240

-140

+140
+140

V

I

H

Holding current

di/dt = -30 mA/ms
di/dt = +30 mA/ms

+100

-150

mA

I

D

Off-state current 0 < VD < ±50 V, TJ = 85°C ±10 µA

C

TG

Off-state capacitance f = 100 kHz,Vd= 1 V rms VTG= -5 V, (See Note 5) 18 36 pF

C

RG

Off-state capacitance f = 100 kHz,Vd= 1 V rms VTG= -50 V, (See Note 5) 10 20 pF

thermal characteristics

PARAMETER

MIN TYP MAX

UNIT

R

θJA

Junction to free air thermal resistance 160 °C/W