Power Innovations TISP83121D, TISP83121DR Datasheet

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

device symbol

SD6XAKA

OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS

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Programmable Pr otection Configurations up to ±100 V

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Typically 5 Lines Protected by Two TISP83121D + Diode Steering Networks

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High Surge Current

- 150 A 10/1000 µs

- 150 A 10/700 µs

- 500 A 8/20 µs

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Pin compatible with the LCP3121

- Functional Replacement in Diode Steering Network Applications

- 50% more surge current

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Small Outline Surface Mount Package

- Available Ordering Options

CARRIER PART #

Tube TISP83121D

Taped and reeled TISP83121DR

TISP83121D

D PACKAGE

(TOP VIEW)

K G1 G2

For operation at the rated current values connect pins 1, 4, 5 and 8 together.

2 3 4

MD6XAYA

description

The TISP83121D is a dual-ga te reverse-blocking unidirectional thyristor designed for the protection of dual-voltage ringing SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction.

The device chip is a four-layer NPNP silicon thyristor structure which has an electrode connection to every layer. For negative overvoltage protection the TISP83121D is used in a common anode configuration with the voltage to be limited applied to the cathod e (K) terminal and the negative reference potential applied to the gate 1 (G1 ) terminal. For positive overvoltage protection the TISP83121D is used in a common cathode configuration with the voltage to be limited applied to the anode (A) terminal and the positive reference potential applied to the gate 2 (G2) terminal.

The TISP83121D is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line conductor and the protector. Further, the gate reference supply voltage requires an appropriately poled series diode to prevent the

supply from being shorted when the TISP83121D crowbars.

Under low level power cross conditions the TISP83121D gate current will charge the gate reference supply. If the reference su pply cannot absorb the charging current its potential will increase, possibly to damaging levels. To avoid excessive voltage levels a clamp (zener or avalanche breakdown diode) may be added in shunt with the supply. Alternatively, a grounded collector emitter -follower may be used to reduce the charging current by the transistors H

value.

This monolithic protection device is mad e with a ion-implanted epi taxial-planar tech nology to give a consistent protection performance and be virtually transparent to the system in normal operation.

PRODUCT INFORMATION

Information is current as of publication date. Produc ts conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TISP83121D

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

FEBRUA RY 1999

absolute maximum ratings

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage, 0 °C to 70 °C V Non-repetitive peak on-state pulse current (see Notes 1 and 2)

10/1000 µs (GR-1089-CORE, open-circuit voltage wave shape 10/1000 µs) 150 5/310 µs (CCITT K20/21, open-circuit voltage wave shape 7 kV10/700 µs) 150 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 500

Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2)

100 ms 1 s

900 s Junction temperature T Storage temperature range T

TSM

DRM

TSP

stg

100 V

8 3

-40 to +150 °C

-65 to +150 °C

NOTES: 1. Initially the protector must be in thermal equilibrium with 0 °C < T

its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together.

< 70 °C. The surge may be repeated after the device returns to

2. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

electrical characteristics, TJ = 25 °C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Off-state current Vd=70V, IG=0 1µA

Repetitive peak off-state

DRM

current

Holding current IT= 1 A, di/dt = -1A/ms

Reverse current VR=0.3V 1mA

Gate G1 trigger current IT=+1A, t

G1T

Gate G2 trigger current IT=+1A, t

G2T

G1-K trigger voltage IT=+1A, t

G1T

G2-A trigger voltage IT=+1A, t

G2T

Anode to cathode off-

state capacitance

d=VDRM

f=1MHz, V

= 100 V, IG= 0, 0 °C to 70 °C 10 µA

= 0 to 70 °C

= 25 °C

= 70 °C

= 20 µs +200 mA

p(g)

= 20 µs -180 mA

p(g)

=20µs +1.8 V

p(g)

=20µs -1.8 V

p(g)

=1V

, VD=5V, IG= 0 (see Note 3) 100 pF

RMS

90 60

300

NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incor porating a guard circuit. The unmeasured

device terminals are decoupled to the guard terminal of the bridge.

thermal characterist ics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Junction to free air thermal resistance

PRODUCT INFORMATION

= 25 °C, EIA/JESD51-3 PCB,

EIA/JESD51-2 environment, I

= I

TSM(900)

105 °C/W

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

PARAMETER MEASUREMENT INFORMATION

TISP83121D

FEBRUARY 1999

QUADRANT 1 ANODE POSITIVE

SWITCHING CHARACTERISTIC

-v

QUADRANT III

ANODE NEGATIVE

REVERSE CHARACTERISTIC

-i

DRM

REFERENCE

VOLTAGE

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

multiple line overvoltage protectio n

Figure 2 shows two TISP83121D devices protecting many lines. Line conductor positive overvoltage protection is given by the steering diode ar ray connected to the anode of the upper TISP83121D and the TISP83121D itself. The TISP83 121D gate reference voltage is the positive batter y supply, +V limiting voltage will be the sum of the voltages of the batter y, th e forward biased conductor diode, the gate trigger of the TISP8312 1D and the forward biased reference voltage blocking diode. Typic ally the conductor voltage will be initially limited at 2.5 V above the +V

BAT

value.

Line conductor negative overvoltage protecti on i s given by the diode ste ering array connected to the cathode of the lower TISP83121D and the TISP83121D itself. The TISP83121D gate reference voltage is the negative battery sup ply, -V

. The initial limiting voltage wil l be the sum of the voltages of the batter y, the forward

BAT

biased conductor diode, the gate trigger of the TISP83121D and the forward biased reference voltage blocking diode. Typically the conductor voltage will be initially limited at 2.5 V below the -V

When an TISP83121D crowbars and grounds all conductors of the appropriate polarity, the device current will be the sum of all the SLIC output currents. This will usually exceed the TISP83121D holding current. To switch off the TISP83121D and re sto re normal operation , the grou nde d cond iti on of the SLIC output must be detected and the SLIC outputs turned off.

BAT

value.

PM6XAGB

. The initial

The 150 A rating of the TISP83121D a llows a large number of li nes to be prot ected agains t currents cau sed by lightning. For example, if a recommendation K.20 10 /700 generator was connected to all lines, together

PRODUCT INFORMATION

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