The TISP7xxxF3 series are 3-point overvoltage
protectorsdesignedforprotectingagainst
metallic (differential mode) and simultaneous
longitudinal(commonmode)surges.Each
terminal pair has the same voltage limiting
values and surge current capability. This terminal
pair surge capability ensures that the protector
can meet the simultaneous longitudinal surge
requirement which is typically twice the metallic
surge requirement.
NC - No internal connection
NU - Nonusable; no external electrical connection
should be made to these pins.
Specified ratings require connection of pin 5 and
pin 8.
T
G
R
device symbol
T
NC
NC
R
T
NC
NC
R
T
D PACKAGE
(TOP VIEW)
1
2
3
45
P PACKAGE
(TOP VIEW)
1
2
3
4
SL PACKAGE
(TOP VIEW)
1
2
3
8
7
6
8
7
6
5
G
NU
NU
G
G
NU
NU
G
R
MDXXAL
MDXXAJ A
MDXXAGA
MD7XAACA
Each terminal pair has a symmetrical voltagetriggered thyristor characteristic. Overvoltages
are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which
causesthedevicetocrowbarintoalow-voltage
on state. This low-voltage on state causes the
current resulting from the overvoltage to be .
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
SD7XAB
G
TerminalsT,RandGcorrespondtothe
alternative line designators of A, B and C
safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted
current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in
both polarities.
These low voltage devices are guaranteed to suppress and withstand the listed international lightning surges
on any terminal pair. Nine similar devices with working voltages from 100 V to 275 V are detailed in the
TISP7125F3 thru TISP7380F3 data sheet.
absolute maximum ratings, TA= 25 °C (unless otherwise noted)
RATINGSYMBOLVALUEUNIT
Repetitive peak off-state voltage, 0 °C < T
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)240
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)85
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)45
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)80
10/160 (FCC Part 68, 10/160 voltage wave shape)65
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)60
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)50
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)50
5/320 (FCC Part 68, 9/720 voltage wave shape, single)50
10/560 (FCC Part 68, 10/560 voltage wave shape)45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)40
Non-repetitive peak on-state current, 0 °C < T
50 Hz, 1 sD Package
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 Adi
Junction temperatureT
Storage temperature rangeT
<70°C
A
<70°C (seeNotes1and3)
A
‘7072F3
‘7082F3
PPackage
SL Package
V
DRM
I
PPSM
I
TSM
/dt250A/µs
T
J
stg
58
66
4.3
5.7
7.1
-65to+150°C
-65to+150°C
V
A
A
NOTES: 1. Initially the TISP
initial conditions. The rated current values may be applied singly either to the R to G or to the T to G or to the T to R terminals.
Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total G terminal
current will be twice the above rated current values).
2. See Thermal Information for derated I
3. Above 70 °C, derate I
®
must be in thermal equilibrium at the specified TA. The surge may be repeated after the TISP®returns to its
values 0 °C < TA< 70 °C and Applications Information for details on wave shapes.
electrical characteristics for all terminal pairs, TA= 25 °C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
Repetitive peak offstate current
Breakover voltagedv/dt = ±250 V/ms, R
Impulse breakover
voltage
Breakover currentdv/dt = ±250 V/ms, R
On-state voltageIT=±5A,tW=100µs±5V
Holding currentIT= ±5 A, di/dt = +/-30 mA/ms±0.15A
Critical rate of rise of
off-state voltage
Off-state currentVD=±50V±10µA
Off-state capacitance
V
D=VDRM
,0°C<TA< 70 °C±10µA
=300Ω
SOURCE
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
=300Ω±0.1±0.8A
SOURCE
Linear voltage ramp, Maximum ramp value < 0.85V
f=1MHz, V
f=1MHz, V
f=1MHz, V
f=1MHz, V
f=1MHz, V
=1Vrms,VD=0
d
=1Vrms,VD=-1V
d
=1Vrms,VD=-2V
d
=1Vrms,VD=-5V
d
=1Vrms,VD=-50V
d
DRM
‘7072F3
‘7082F3
‘7072F3
‘7082F3
±5kV/µs
53
56
51
43
25
±72
±82
±90
±100
69
73
66
56
33
V
V
pF
37
f=1MHz, V
=1Vrms,V
d
DTR
=0
29
(see Note 4)
NOTE4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First five capacitance values, with bias V
for the R-G and T-G terminals only. The last capacitance value, with bias V