Power Innovations TISP61512, TISP61511DR, TISP61511D Datasheet

TISP61511D, TISP61512P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION

from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimised.

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding current of the crowbar prevents d.c. latchup.

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.

● Dual Voltage-Programmable Protectors.

- Wide 0 to -80 V Programming Range

- Low 5 mA max. Triggering Current

- High 150 mA min. Holding Current

● Rated for International Surge Wave Shapes

● Functional Replacements for

description

The TISP61511D and TISP61512P are dual forward-conducting buffered p-gate overvoltage protectors. They are designed to protect monolithic Subscriber Line Interface Circuits, SLICs, against overvoltages on the telephone line caused by lightning, ac power contact and induction. The TISP61511D and TISP61512P limit voltages that exceed the SLIC supply rail voltage.

The SLIC line driver section is typically powered

VOLTAGE

WAVE SHAPE

STANDARD

TSP

2/10 µs TR-NWT-001089 170

1.2/50 µs ETS 300 047-1 90

0.5/700 µs RLM88/I3124 40 10/700 µs K17, K20, K21 40

10/1000 µs TR-NWT-001089 30

DEVICE TYPE PACKAGE TYPE

FUNCTIONAL

REPLACEMENT

LCP1511, LCP1511D, ATTL7591AS, MGSS150-1

8-pin Small-Outline

TISP61511D or order as TISP61511DR

for Taped and Reeled LCP1512, LCP1512D, ATTL7591AB, MGSS150-2

8-pin Plastic DIP TISP61512P

device symbol

Terminals K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The

negative protection voltage is controlled by the voltage,

GG,

applied to the G terminal.

SD6XAE

K1 G K2

MD6XAJ

'61512P PACKAGE

(TOP VIEW)

NC - No internal connection

Terminal typical application names shown in

parenthesis

1 2

3 4

A A

(Tip) (Ground)

(Ground) (Ring)

(Gate)

(Tip)

(Ring)

MD6XAL

'61511D PACKAGE

(TOP VIEW)

NC - No internal connection

Terminal typical application names shown in

parenthesis

1 2 3 4

K1 A A K2

(Tip) (Ground) (Ground) (Ring)

(Gate)

(Tip)

(Ring)

TISP61511D, TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

JULY 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C ≤ TJ≤ 85°C, unless otherwise specified. The surge may be

repeated after the device returns to its initial conditions. See the applications section for the details of the impulse generators.

2. The rated current values may be applied to either the R-G or T-G terminal pairs. Additionally, both terminal pairs may have their

rated current values applied simultaneously (in this case the G terminal current will be twice the rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.

absolute maximum ratings

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage, I

= 0, -40°C ≤ TJ≤ 85°C V

DRM

-100 V

Repetitive peak gate-cathode voltage, V

= 0, -40°C ≤ TJ≤ 85°C V

GKRM

-85 V

Non-repetitive peak on-state pulse current(see Notes 1 and 2)

TSP

10/1000 µs 30 5/310 µs

0.2/310 µs

40 1/20 µs 2/10 µs T

= -40°C

= 25, 85°C

120 170

Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)

TSM

A full-sine-wave, 20 ms 5

1 s 3.5

Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2) I

GSM

2 A

Junction temperature T

-55 to +150 °C

Storage temperature range T

stg

-55 to +150 °C

recommended operating conditions

MIN TYP MAX UNIT

Gate decoupling capacitor 220 nF

electrical characteristics, TJ = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Off-state current VD= -85 V, VGK= 0 V

= 25°C 5 µA

= 70°C 50 µA

(BO)

Breakover voltage IT= 30 A, 10/1000 µs, 1 kV, RS= 33 Ω, di/dt

(i)

= 8 A/µs (see Note 3) -58 V

GK(BO)

Gate-cathode voltage at breakover

= 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/dt

(i)

= 14 A/µs (see Note 3)

= 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt

(i)

= 70 A/µs (see Note 3)

= 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/dt

(i)

= 40 A/µs (see Note 3)

10 20 25

On-state voltage

= 0.5 A, tw= 500 µs

= 3 A, tw= 500 µs

3 4

Forward voltage IF= 5 A, tw= 500 µs 3 V

FRM

Peak forward recovery voltage

= 30 A, 10/1000 µs, 1 kV, RS= 33 Ω, di/dt

(i)

= 8 A/µs (see Note 3)

= 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/dt

(i)

= 14 A/µs (see Note 3)

= 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt

(i)

= 70 A/µs (see Note 3)

= 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/dt

(i)

= 40 A/µs (see Note 3)

5 5 7

Holding current IT= 1 A, di/dt = -1A/ms, VGG= -48 V 150 mA

GAS

Gate reverse current VGG= -75 V, K and A terminals connected

= 25°C 5 µA

= 70°C 50 µA

Gate trigger current IT= 3 A, t

p(g)

≥ 20 µs, VGG= -48 V 0.2 5 mA

Gate trigger voltage IT= 3 A, t

p(g)

≥ 20 µs, VGG= -48 V 2.5 V

NOTE 3: All tests have C

= 220 nF and VGG = -48 V. RS is the current limiting resistor between the output of the impulse generator and

the R or T terminal. See the applications section for the details of the impulse generators.

JULY 1995 - REVISED SEPTEMBER 1997

TISP61511D, TISP61512P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

Anode-cathode offstate capacitance

f = 1 MHz, V

= 1 V, IG= 0, (see Note 4)

= -3 V 100 pF

= -48 V 50 pF

NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

θJA

Junction to free air thermal resistance

tot

= 0.8 W,TA= 25°C

5 cm

, FR4 PCB

D Package 170

°C/W

P Package 125

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

electrical characteristics, TJ = 25°C (unless otherwise noted) (Continued)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

-v

TSM

TSP

(BO)

Quadrant I

Forward

Conduction

Characteristic

FSM

(= |I

TSM

FSP

(= |I

TSP

-i

Quadrant III

Switching

Characteristic

PM6XAAA

GK(BO)

TISP61511D, TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

JULY 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

DEVICE PARAMETERS

general

Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic. Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilised.

Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure, rather than its application usage as a single device may have many applications each using a different terminology for circuit connection.

alternative symbol cross-reference guide

This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this guide.

THERMAL INFORMATION

Figure 2.

MAXIMUM NON-RECURRING 50 Hz CURRENT

t - Current Duration - s

0·1 1 10 100 1000

TRMS

- Maximum Non-Recurrent 50 Hz Current - A 1

CURRENT DURATION

TI6LAA

GEN

= 250 Vrms

GEN

= 10 to 150 Ω Ω

TISP61511D

TISP61512P

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