Power Innovations TISP61089SDR, TISP61089SD Datasheet

PROGRAMMABLE SLIC OVER VOLTAGE PROTECTION FOR LSSGR ‘1089

device symbol

●

Dual Voltage-Programmable Protectors

- Wide 0 to -85 V Programming Range

- Low 5 mA max. Gate Triggering Current

- High 150 mA min. Holding Current

●

Rated for LSSGR ‘1089 Conditions

WAVE SHAPE

2/10 µs 4.5.8 Second-Level 1 120

10/1000 µs 4.5.7 First-Level 3 30

‘1089 TEST CLAUSE

AND TEST #

TISP61089S

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

D PACKAGE

(TOP VIEW)

TSP

(Tip) (Gate)

K1 G NC

(Ring)

NC - No internal connection

Terminal typical application names shown in

1 2 3 4

parenthesis

(Ground)

MD6XBA

60 Hz POWER

FAULT TIME

100 ms 4.5.13 Second-Level 2 11

1 s 4.5.13 Second-Level 2 4.5

5 s 4.5.13 Second-Level 2 2.4 300 s 4.5.13 Second-Level 1 0.95 900 s 4.5.13 Second-Level 1 0.93

●

2/10 Protection Voltage Specified

ELEMENT

Diode 6 8

Crowbar

= -48 V

●

Also Rated for ITU-T 10/700 impulses

●

Small Outline Surface Mount Package

- Available Ordering Options

CARRIER ORDER #

Tube TISP61089SD

Taped and reeled TISP61089SDR

‘1089 TEST CLAUSE

AND TEST #

FIRST-LEVEL

V @ 56 A

-57 -60

TSM

SECOND-LEVEL

V @ 100 A

A A

Termin als K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The negative protection voltage is controlled by the voltage, V

●

Single-Lead Line Connection Version of

applied to the G terminal.

GG,

G1,G2

Feed-Through TISP61089D

- Ground Lead Creepage Distance . . > 3 mm

description

The TISP61089S is a dual forward-conduct ing buffered p-gate overvoltage protec tor. It is designed to p rotec t monolithic SLICs (Sub scriber Line Interface Circui ts) against overvoltages on the telepho ne line caused by lightning, a.c. power contact a nd indu ction. The TISP6 1089S l imits voltages tha t exceed the SLIC s upply rail voltage. The TISP61089S parameters are specifi ed to allow equipment compliance wi th Bellcore GR-1089CORE, Issue 1.

SD6XAP

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of

-10 V to -75 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negat ive supply voltage. As the p rotecti on voltage will th en track the negati ve supply voltage the overvoltage stress on the SLIC is minimised.

Positive overvoltages are cli pped to ground by diode forward conducti on. Negative overvoltages are init ially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then

TISP61089S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

JULY 1999

the protector will c rowbar in to a l ow voltage on-state cond ition. As the overvoltage sub side s the hi gh hol ding current of the crowbar prevents d.c. latchup.

The TISP61089S is intended to be used with a ser ies combination of a 25Ω or higher resistance and a suitable overcurrent protector. Power fault compliance requires the serie s overcurrent element to open- cir cuit or become high impedance (see Applications Information). For equipment compliant to ITU-T recommendations K20 or K21 only, the series resistor value is set by the power cross requirements. For K20 and K21, a minimum series resistor value of 10Ω is recommended.

These monolithic prote ction devices are fabricated in ion-implanted planar vertic al power structures for high reliability and in normal system operation they are virtually transparent. The TISP61089S buffered gate design reduces the loading on the SLIC supply dur ing overvoltages caused by power cross and induction. The TISP61089S is the TISP61089D with a different pinout . The feed-through Ring (leads 4 — 5) and Tip (leads 1 — 8) connection s have been replaced by single Ring (lead 4) and Tip (lead 1) connections. This increases package creepage distance of the biased to ground connections from about 0.7 mm to over 3 mm.

absolute maximum ratings

RATING SYMBOL VALUE UNIT

≤

Repetitive peak off-state voltage, I Repetitive peak gate-cathode voltage, V Non-repetitive peak on-state pulse current (see Notes 1 and 2)

10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 5/320 µs (ITU-T recommendation K20 & K21, open-circuit voltage wave shape 10/700)

1.2/50 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4, Alternative) 100 2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 120

Non-repetitive peak on-state current, 60 Hz (see Notes 1 and 2)

0.1 s 11 1s

5s 300 s

900 s Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Notes 1 and 2) I Operating free-air temperature range T Junction temperature T Storage temperature range T

= 0, -40°C≤T

85°C V

≤

85°C V

DRM

GKRM

TSP

TSM

GSM

stg

-100 V

-85 V

30 40

4.5

2.4

0.95

0.93 40 A

-40 to +85 °C

-40 to +150 °C

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C≤T

its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground ter minal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.

recommended operating conditions

Gate decoupling capacitor 100 220 nF

TISP61089S series resistor for first-level and second-level surge survival

TISP61089S series resistor for first-level surge survival

PRODUCT INFORMATION

≤

85°C. The surge may be repeated after the device returns to

MIN TYP MAX UNIT

40 25

Ω

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

electrical characterist ics, TJ = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

GKS

V Q

(BO)

FRM

Off-state current VD=V

2/10 µs, I

Breakover voltage

2/10 µs, I

1.2/50 µs, I

, IG=0

DRM

=-56A, RS=45

= -100 A, RS=50

= -53 A, RS=47

= -96 A, RS=52

Ω,

VGG=-48V, CG= 220 nF

Ω,

VGG=-48V, CG= 220 nF

Ω,

VGG=-48V, CG= 220 nF

Ω,

VGG=-48V, CG= 220 nF

Forward voltage IF= 5 A, tw= 200 µs 3V

Ω,

VGG=-48V, CG= 220 nF

Ω,

VGG=-48V, CG= 220 nF

Ω,

VGG=-48V, CG= 220 nF

Ω,

VGG=-48V, CG= 220 nF

Peak forward recovery voltage

2/10 µs, I 2/10 µs, I

1.2/50 µs, I

=56A, RS=45

= 100 A, RS=50

=53A, RS=47

=96A, RS=52

Holding current IT= -1 A, di/dt = 1A/ms, VGG= -48 V -150 mA

Gate reverse current VGG=VGK=V

Gate trigger current IT= 3 A, t Gate trigger voltage IT= 3 A, t

p(g) p(g)

GKRM

≥

20 µs, V

≥

20 µs, V

, VKA=0

=-48V 5 mA

=-48V 2.5 V

Gate switching charge 1.2/50 µs, IT=53A, RS=47Ω, VGG= -48 V CG= 220 nF 0.1 µC Anode-cathode off-

state capacitance

f=1MHz, V

=1V, IG= 0, (see Note 3)

T T

V V

TISP61089S

JULY 1999

= 25°C -5 µA

= 85°C -50 µA

-57

-60

-64

6 8 8

= 25°C -5 µA

= 85°C -50 µA

= -3 V 100 pF

=-48V 50 pF

NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

= 25 °C, EIA/JESD51-3 PCB,

Junction to free air thermal resistance

EIA/JESD51-2 environment, I

= I

TSM(900)

105 °C/W

PRODUCT INFORMATION

TISP61089S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

JULY 1999

PARAMETER MEASUREMENT INFORMATION

-v

(BO)

Quadrant III

Switching

Characteristic

(BO)

GK(BO)

(= |I

TSP

FSP

Characteristic

(= |I

FSM

TSM

TSP

-i

Quadrant I

Forward

Conduction

PM6XAAA

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

PRODUCT INFORMATION

TISP61089S

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

THERMAL INFORMATION

PEAK NON-RECURRING A.C.

CURRENT DURATION

RING AND TIP CONNECTIONS -

applied simultaneously to both

TSM

GROUND CONNECTION Return current is twice I

GEN

VG = -48 V, T

TSM

= 600 Vrms

= 70 to 950

AMB

TI6LACA

Ω

Ω Ω

= 85°C

JULY 1999

- Peak Non-Recurrent 60 Hz Current - A

TSM

0·1 1 10 100 1000

t - Current Duration - s

Figure 2. NON-REPETITIVE PEAK ON-STATE CURRENT AGAINST DURATION

APPLICATIONS INFORMATION

gated protectors

This section covers three topics. Firstly, it is explained why gated protectors ar e n eed ed. S econd, the voltage limiting action of the protector is described. Third, an example application circuit is described.

purpose of gated protectors

Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monol ithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the limiting voltage of the protector could als o be a fixed value. The TISP1072F3 is a typical example of a fixed voltage SLIC protector.

SLICs have become more sophisticated. To minimise power consumption, some designs automatically adjust the supply voltage, V supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive sufficient line curre nt. The optimum protection for this type of SLIC would be given by a protection voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor ga te to th e SLIC supply, Figure 3. This gated (programmable) protection arrangement mi nimises the voltage stress on the SLIC, no matter what value of supply voltage.

, to a value that is just sufficient to drive the requir ed line curre nt. For shor t lines th e

BAT

PRODUCT INFORMATION

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