Power Innovations TISP61060DR, TISP61060P, TISP61060D Datasheet

TISP61060D, TISP61060P

negative protection voltage is controlled by the voltage,

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK

PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION

● Dual Voltage-Programmable Protectors

- Third Generation Design using Vertical
Power Technology

- Wide -5 V to -85 V Programming Range

- High 150 mA min. Holding Current

● Reduced V

Supply Current

BAT

- Triggering Current is Typically 50x Lower

- Negative Value Power Induction Current
Removes Need for Extra Protection Diode

● Rated for LSSGR & FCC Surges

I

STANDARD WAVE SHAPE

LSSGR 10/1000 µs 30
FCC Part 68 10/160 µs 45
LSSGR 2/10 µs 50

TSP

A

● Surface Mount and Through-Hole Options

- TISP61060P for Plastic DIP

- TISP61060D for Small-Outline

- TISP61060DR for Taped and Reeled
Small-Outline

● Functional Replacements for

PART NUMBERS

TCM1030P, TCM1060P, LB1201AB TISP61060P
TCM1030D, TCM1060D, LB1201AS TISP61060D
TCM1030DR, TCM1060DR TISP61060DR

FUNCTIONAL

REPLACEMENT

(Tip)
(VS)

(Ring)

Terminal typical application names shown in

(Tip)

(VS)

(Ring)

Terminal typical application names shown in

device symbol

K1 G K2

'61060D PACKAGE

(TOP VIEW)

K1
G
NC
K2

NC - No internal connection

K1
G

NC
K2

NC - No internal connection

1
2
3
4

parenthesis

'61060P PACKAGE

(TOP VIEW)

1
2

3
4 5

parenthesis

8

K1

7

A

6

A

5

K2

8

K1

A

7

A

6

K2

(Tip)
(Ground)
(Ground)
(Ring)

MD6XAO

(Tip)
(Ground)

(Ground)
(Ring)

MD6XAP

description

The TISP61060 is a dual forward-conducting
buffered p-gate overvoltage protector. It is
designed to protect monolithic SLICs (Subscriber
Line Interface Circuits), against overvoltages on
the telephone line caused by lightning, a.c.
power contact and induction. The TISP61060

Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The

V

applied to the G terminal.

GG,

A

limits voltages that exceed the SLIC supply rail
voltage.

The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of

-10 V to -70 V. The protector gate is connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply
voltage, the overvoltage stress on the SLIC is minimised. (see Applications Information).

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding
current of the crowbar prevents d.c. latchup.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

SD6XAE

1

TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.

absolute maximum ratings

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage, I
Repetitive peak gate-cathode voltage, V

= 0, -40°C ≤ TJ≤ 85°C V

G

= 0, -40°C ≤ TJ≤ 85°C V

KA

Non-repetitive peak on-state pulse current(see Notes 1 and 2)

10/1000 µs 30
10/160 µs 45
2/10 µs 50

Non-repetitive peak on-state current (see Notes 1 and 2)

I

60 Hz sine-wave, 2 s 1
Continuous on-state current (see Note 2) I
Continuous forward current (see Note 2) I
Operating free-air temperature range T
Storage temperature range T
Lead temperature 1,6 mm (1/16 inch) from case for 10 s T

DRM

GKRM

I

TSP

TSM

TM
FM

A

stg

L

-100 V

-85 V

0.3 A

0.3 A

-40 to +85 °C

-40 to +150 °C
260 °C

A

Arms 60 Hz sine-wave, 25 ms 6

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C ≤ TJ≤ 85°C. The surge may be repeated after the device returns to

its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.

recommended operating conditions

MIN TYP MAX UNIT

Gate decoupling capacitor 100 nF

C

G

electrical characteristics, -40°C ≤ TJ ≤ 85°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

T

= 25°C 5 µA

I

D

Off-state current VD= -85 V, VGK= 0 V

dv/dt = -250 V/ms, Source Resistance = 300

V

(BO)

I

S

V

T

V

F

I

H

Breakover voltage

Switching current dv/dt = -250 V/ms, Source Resistance = 300 Ω, VGG= -50 V -100 mA

On-state voltage

Forward voltage

Holding current IT= -1 A, di/dt = +1A/ms, VGG= -50 V -150 mA

dv/dt = -250 V/ms, Source Resistance = 300

= 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VGG= -50 V

I

T

I

= 1 A

T

= 10 A

I

T

= 16 A

I

T

= 30 A

I

T

I

= 1 A

F

= 10 A

I

F

= 16 A

I

F

= 30 A

I

F

J

= 85°C 50 µA

T

J

Ω, VGG= -50 V
Ω, VGG= -65 V

-53

-68

-55

V

3
4

V

5
7

2
4

V

5
5

PRODUCT INFORMATION

2

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

electrical characteristics, -40°C ≤ TJ ≤ 85°C (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

T

= 25°C 5 µA

I

GAS

I

GT

dv/dt

C

O

Gate reverse current VGG= -85 V, K and A terminals connected

Gate trigger current IT= -1 A, t
Critical rate of rise of

off-state voltage
Anode-cathode off-

state capacitance

= -50 V, (see Note 3) -1000 V/µs

V

GG

f = 1 MHz, V

≥ 20 µs, VGG= -50 V 15 mA

p(g)

= 0.1 V, IG= 0, (see Note 4)

d

J

= 85°C 50 µA

T

J

V

= 0 V 85 pF

D

= -50 V 10 pF

V

D

NOTES: 3. Linear rate of rise, maximum voltage limited to 80% V

4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

P

Junction to free air thermal resistance

R

θJA

tot

5 cm

PARAMETER MEASUREMENT INFORMATION

I

(= |I

FSP

I

(= |I

FSM

V

GK(BO)

.

GG

= 0.8 W,TA= 25°C

2

, FR4 PCB

+i

|)

TSP

|)

TSM

I

F

D Package 170
P Package 125

°C/W

Quadrant I

Forward

Conduction

Characteristic

V

F

V

-v

I

(BO)

GG

I

S

V

(BO)

V

S

V

D

Quadrant III

Switching

Characteristic

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

PRODUCT INFORMATION

I

D

I

H

V

T

I

T

I

TSM

I

TSP

-i

+v

PM6XAAA

3

TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

DEVICE PARAMETERS

general

Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised.

Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and
their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,
rather than its application usage as a single device may have many applications each using a different
terminology for circuit connection.

alternative symbol cross-reference guide

This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in
some cases the alternative symbols have no substance in international standards and are not fully defined by
the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this
guide.

CROSS-REFERENCE FOR TISP61060 AND TCM1030/60

TISP61060 PARAMETER

RATINGS & CHARACTERISTICS TCM1060, TCM1030

Non-repetitive peak on-state pulse current I
Non-repetitive peak on-state current I
Non-repetitive peak on-state current I
Forward voltage V
Forward current I
On-state voltage V
On-state current I
Switching current I
Breakover voltage V
Gate reverse current (with A and K terminals connected) I
Off-state current I
Off-state voltage V
Gate-cathode breakover voltage V
Gate voltage, (V
to the A terminal)
Off-state capacitance C

Cathode 1 K1 Tip Tip
Cathode 2 K2 Ring Ring
Anode A GND Ground
Gate G V

is gate supply voltage referenced

GG

TERMINALS TCM1060, TCM1030

DATA SHEET

SYMBOL

TSP
TSM ­TSM -

F

F

T
T
S

(BO)
GAS
D

D

GK(BO)

V

G

O

ALTERNATIVE

SYMBOL

- Non-repetitive peak surge current

V

CF

I

FM

V

C

I

TM

I

trip

V

trip

I

D

I

D

V

S

V

OS

V

S

C

off

S

ALTERNATIVE PARAMETER

Non-repetitive peak surge current,10 ms
Continuous 60-Hz sinewave, 2 s
Forward clamping voltage
Peak forward current
Reverse clamping voltage
Peak reverse current
Trip current
Trip voltage
Stand-by current, TIP & RING at GND
Stand-by current, TIP & RING at V
Supply voltage
Transient overshoot voltage

Supply voltage
Off-state capacitance

Supply voltage

S

PRODUCT INFORMATION

4

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

CROSS-REFERENCE FOR TISP61060 AND LB1201AB

TISP61060 PARAMETER

RATINGS & CHARACTERISTICS LB1201AB

Non-repetitive peak on-state pulse current I
Non-repetitive peak on-state current I
On-state voltage V
Switching current I
Breakover voltage V
Maximum continuous on-state current I
Maximum continuous forward current I
Gate voltage, (V

to the A terminal)
Off-state capacitance C

Cathode 1 K1 Tip Tip
Cathode 2 K2 Ring Ring
Anode A GND Ground
Gate G V

is gate supply voltage referenced

GG

TERMINALS LB1201AB

DATA SHEET

SYMBOL

TSP
TSM

T

S

(BO)
TM
FM

V

G

O

ALTERNATIVE

SYMBOL

I

P

I

P

V

ON

I

t

V

T

I

C

I

C

V

S

C

OFF

S

ALTERNATIVE PARAMETER

Pulse current
RMS pulse current, 60 Hz
On-state voltage
Trip current
Trip voltage
On-state current
On-state current

Supply voltage

Off-state capacitance

Supply voltage

TISP61060D, TISP61060P

APPLICATIONS INFORMATION

electrical characteristics

The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction
temperature, T

. Hence a characteristic value will depend on the junction temperature at the instant of

J

measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.

gated protector evolution and characteristics

This section covers three topics. Firstly, it is explained why gated protectors are needed. Second, the
performance of the original IC (integrated circuit) based version is described. Third, the performance
improvements given by the TISP61060 are detailed.

purpose of gated protectors

Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c.
power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the
limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example of a fixed
voltage SLIC protector.

SLICs have become more sophisticated. To minimise power consumption, some designs automatically adjust
the supply voltage, V
supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive
sufficient line current. The optimum protection for this type of SLIC would be given by a protection voltage
which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the
SLIC supply, Figure 2. This gated (programmable) protection arrangement minimises the voltage stress on
the SLIC, no matter what value of supply voltage.

, to a value that is just sufficient to drive the required line current. For short lines the

BAT

PRODUCT INFORMATION

5