Power Innovations TISP5150H3BJ, TISP5080H3BJ, TISP5070H3BJ Datasheet

TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ

device symbol

SD5XAB

2

1

UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS

●

Analogue Line Card and ISDN Protection

- Analogue SLIC

- ISDN U Interface

- ISDN Power Supply

●

8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating

●

Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge

FORWARD-CONDUCTING

JANUARY 1998 - REVISED MARCH 1999Copyright © 1999, Power Innovations Limited, UK

SMBJ PACKAGE

(TOP VIEW)

12

MDXXBGB

V

DRM

DEVICE

‘5070 -58 -70
‘5080 -65 -80
‘5110 -80 -110
‘5150 -120 -150

●

Rated for International Surge Wave Shapes

WAVE SHAPE STANDARD

2/10 µs GR-1089-CORE 500

8/20 µs ANSI C62.41 300
10/160 µs FCC Par t 68 250
10/700 µs ITU-T K20/21 200
10/560 µs FCC Par t 68 160

10/1000 µs GR-1089-CORE 100

MINIMUM

V

V

(BO)

MAXIMUM

V

I

TSP

A

description

These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally
caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the
telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN
power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance
protector network for the 3-point protection of ISDN lines.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to speci fic ations in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative
overvoltages are initially clipped by brea kdown clamping until the voltage r ises to the breakover level, which
causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current
resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diver te d cu rrent s ubsides. Positive overvoltages are limi ted by the conduc tion o f
the anti-parallel diode.

This TISP5xxxH3BJ range consists of four voltage variants to meet vari ous maximum sys tem voltage levels
(58 V to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. The se hi gh (H ) c urre nt pr otecti on devices ar e in a pla stic pa ckage SMB J ( JEDE C DO- 21 4AA
with J-bend leads) and supplied in embossed carrier reel pack.

1

TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JANUARY 1998 - REVISED MA RCH 1999

T

absolute maximum ratings,

Repetitive peak off-state voltage, (see Note 1)

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 140 A di
Junction temperature T
Storage temperature range T

= 25°C (unless otherwise noted)

A

RATING SYMBOL VALUE UNIT

‘5070
‘5080
‘5110
‘5150

- 58

V

DRM

I

TSP

I

TSM

/dt 400 A/µs

T

J

stg

- 65

- 80

-120

55
60

2.1

-40 to +150 °C

-65 to +150 °C

V

A

A

NOTES: 1. See Figure 9 for voltage values at low er temperatures.

2. Initially the TISP5xxxH3BJ must be in thermal equilibrium with T

3. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions.

4. See Figure 10 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed w iring
track widths. See Figure 8 for the current ratings at other durations. Derat e current v alues at -0.61%/°C for ambient temperatures
above 25 °C

=25°C.

J

electrical characteristics for terminal pair, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

DRM

V

V

I

(BO)

V

V

V
I

H

Repetitive peak off­state current

Breakover voltage dv/dt = -750 V/ms, R

(BO)

Impulse breakover

(BO)

voltage

Breakover current dv/dt = -750 V/ms, R
Forward voltage IF= 5 A, tW= 500 µs ‘5070 thru ‘5150 3 V

F

Peak forward recovery

FRM

voltage

On-state voltage IT=-5A, tW= 500 µs -3 V

T

Holding current IT= -5 A, di/dt = +30 mA/ms -0.15 -0.6 A

V

= V

D

DRM

Ω

= 300

SOURCE

dv/dt≥-1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A

Ω

= 300

SOURCE

dv/dt≤+1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A

TA = 25°C
T

= 85°C

A

‘5070
‘5080
‘5110
‘5150
‘5070
‘5080
‘5110
‘5150

-0.15 -0.6 A

‘5070 thru ‘5150 5 V

-5

-10

-70

-80

-110

-150

-80

-90

-120

-160

µA

V

V

PRODUCT INFORMATION

2

TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ

FORWARD-CONDUCTING

UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JANUARY 1998 - REVISED MARCH 1999

electrical characteristics for terminal pair, TA = 25°C (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

dv/dt
I

C

Critical rate of rise of
off-state voltage
Off-state current VD=-50V TA = 85°C -10 µA

D

Off-state capacitance

off

Linear voltage ramp, Maximum ramp value< 0.85V

f = 100 kHz, V
(see Note 6)

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

= 1 Vrms, VD=-1V,

d

= 1 Vrms, VD=-2V

d

= 1 Vrms, VD=-50V

d

= 1 Vrms, VD= -100 V

d

DRM

‘5070
‘5080
‘5110
‘5150
‘5070
‘5080
‘5110
‘5150
‘5070
‘5080
‘5110
‘5150
‘5150

-5 kV/µs

300
280
240
140
260
245
205
120

90
80
65
35
30

420
390
335
195
365
345
285
170
125
110

90
50
40

pF

NOTE 6: Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly

dependent on connection inductance.

thermal characteristics

PARAMETER

EIA/JESD51-3 PCB, I

= 25 °C, (see Note 7)

T

R

NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

Junction to free air thermal resistance

θ

JA

A

265 mm x 210 mm populated line card,
4-layer PCB, I

TEST CONDITIONS

= I

T

TSM(1000)

= I

T

TSM(1000)

, TA = 25 °C

,

MIN TYP MAX UNIT

113

°C/W

50

PRODUCT INFORMATION

3

TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JANUARY 1998 - REVISED MA RCH 1999

PARAMETER MEASUREMENT INFORMATION

+i

I

TSP

I

TSM

I

F

V

F

Quadrant I

Forward

Conduction

Characteristic

V

-v

I

(BO)

DRM

I

DRM

V

(BO)

Quadrant III

Switching

Characteristic

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIR

V

D

I

D

I

H

V

T

I

T

I

TSM

I

TSP

-i

ALL MEASUREMENTS ARE REFERENCED TO TERMINAL 1

+v

PMXXACA

PRODUCT INFORMATION

4

- Off-State Current - µA

NORMALISED BREAKO V ER VOLTAGE

vs

JUNCTION TEM P ERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakover Voltage

0.95

1.00

1.05

1.10

TC5XAIA

NORMALISED HOLDING CURRENT

vs

JUNCTION T EM PERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Holding Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC5XAD

D

I

100

10

0·1

0·01

TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ

FORWARD-CONDUCTING

UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JANUARY 1998 - REVISED MARCH 1999

TYPICAL CHARACTERISTICS

OFF-ST AT E CURRE NT

vs

JUNCTION TEM P ERATURE

1

TC5XAFA

VD = -50 V

0·001

-25 0 25 50 75 100 125 150
T

- Junction Temperature - °C

Figure 2. Figure 3.

ON-STATE AND F ORWARD CURRENTS

vs

ON-STATE AND F ORWARD VOL TAGES

200
150

TA = 25 °C

100

t

= 100 µs

W

70
50

40
30

20
15

10

7

V

5

F

4
3

- On-State Curren t, Forward Current - A

F

2

, I

T

I

1.5
1

0.7 1.5 2 3 4 5 7110

TC5LAC

VT , VF- On-State Voltage, Forward Voltage - V

V

Figure 4. Figure 5.

T

PRODUCT INFORMATION

5