Power Innovations TISP4360H3BJ Datasheet

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

device symbol

OVERVOLTAGE PROTECTOR FOR ADSL MODEMS & SPLITTERS

●

Matched to POTS + ADSL Voltages

- W orking Voltage, V

- Protection Voltage, V

●

High FCC, Bellcore & ITU Surge Ratings

WAV E SHAP E STANDARD

2/10 µs GR-1089-CORE 500

10/160 µs FCC Part 68 250
10/700 µs
10/560 µs FCC Part 68 160

10/1000 µs GR-1089-CORE 100

●

High UL 1950, Bellcore & ITU AC Capability

STANDARD

UL 1950

(ANNEX NAC)

GR-1089-CORE

ITU-T K20/21

ITU-T K20/21

FCC Part 68

APPLIED AC

A RMS

40

7

2.2
60
30
15

2.2
23

1

. . . . . . . . . . . . .290 V

DRM

. . . . . . . . . . . .360 V

(BO)

I

TSP

A

200

‘4360 I

T(OV)M

s

0.04

4.2

SURVIVES

0.015

0.08

0.48

SURVIVES

0.15

SURVIVES

LIMIT

TISP4360H3BJ

SMBJ PACKAGE

(TOP VIEW)

12

T

R

Terminals T and R correspond to the
alternative line designators of A and B

●

Large creepage distance . . . . . . . . . 2.54 mm

●

Low Capacitance . . . . . . . . . . . . 24 pF @ 50 V

. . . . . . . . . . . . . .70 pF @ 0

T(A)R(B)

MDXXBG

SD4XAA

JUNE 1999Copyright © 1999, Power Innovations Limited, UK

description

The TISP4360H3BJ is d esigned to li mit overvoltages on eq uipment use d for telephone lines carr ying POTS
(Plain Old Telephone System) and ADSL (Asymmetrical Digital Subscriber Line) signals. TISP4360H3BJ a.c.
overload limits are specified for designers to select the correct overcurrent protectors to meet safety
requirements, e.g. UL 1950.

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping. If suffi cien t curre nt is available from the overvoltage, the breakdown voltage
will rise to the breakover level, which causes t he device to switch into a low-voltage on-stat e conditio n. This
switching action removes the high voltage str ess f rom th e following circuitry and caus es the cur rent res ultin g
from the overvoltage to be safely diverted through the protector. The high holding (switch off) current prevents
d.c. latchup as the diverted current subsides.

The TISP4360H3BJ is gu aranteed to voltage limit and withstand the listed inter national lightning surges i n
both polaritie s. This high (H ) curre nt prote ction device is in a plas tic SM BJ package (JE DEC DO-214 AA wit h
J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values,
consult the factory.

PRODUCT INFORMATION

Information is current as of publication date. Produc ts conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TISP4360H3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JUNE 1999

T

absolute maximum ratings,

Repetitive peak off-state voltage, (see Note 1) V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.

Maximum overload on-state current without open circuit, 50 Hz/60 Hz a.c.

0.015 s

0.04 s

0.08 s

0.15 s

0.48 s

4.2 s
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A di
Junction temperature T
Storage temperature range T

= 25°C (unless otherwise noted)

A

RATING SYMBOL VALUE UNIT

DRM

I

TSP

I

TSM

I

T(OV)M

/dt 400 A/µs

T

J

stg

±290 V

55
60

2.2

60
40
30
23
15

7

-40 to +150 °C

-65 to +150 °C

A

A

A rms

NOTES: 1. See Applications Information and Figure 9 for voltage values at lower temperatures.

2. Initially the TISP4360H3BJ must be in thermal equilibrium with T

3. The surge may be repeated after the TISP4360H3BJ returns to its initial conditions.

4. See Applications Information and Figure 10 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wir ing
track widths. See Figure 7 for the current ratings at other durations. Derate current v alues at -0.61%/°C for ambient temperatures
above 25 °C

= 25°C.

J

PRODUCT INFORMATION

2

TISP4360H3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

electrical characterist ics for the T and R terminals, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Repetitive peak off-

I

DRM

state current

V

Breakover voltage dv/dt = ±750 V/ms, R

(BO)

Impulse breakover

V

(BO)

voltage

Breakover current dv/dt = ±750 V/ms, R

I

(BO)

V

On-state voltage IT=±5A, tW= 100 µs ±3 V

T

Holding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 ±0.6 A

I

H

Critical rate of rise of

dv/dt

off-state voltage

I

Off-state current VD=±50V TA = 85°C ±10 µA

D

Off-state capacitance

C

off

thermal characteristics

= V

V

D

DRM

Ω

= 300

SOURCE

dv/dt≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A

Ω

= 300

SOURCE

Linear voltage ramp, Maximum ramp value < 0.85V

f = 100 kHz, V
f = 100 kHz, V
f = 100 kHz, V
f = 100 kHz, V
f = 100 kHz, V

=1V rms, VD=0,

d

=1V rms, VD=-1V

d

=1V rms, VD=-2V

d

=1V rms, VD=-50V

d

=1V rms, VD= -100 V

d

DRM

TA = 25°C

= 85°C

T

A

±0.15 ±0.6 A

±5 kV/µs

70
60
55
24
22

JUNE 1999

±5

±10

±360 V

±372 V

84
67
62
28
26

µA

pF

PARAMETER

EIA/JESD51-3 PCB, I

= 25 °C, (see Note 6)

T

R

Junction to free air thermal resistance

θ

JA

A

265 mm x 210 mm populated line card,
4-layer PCB, I

TEST CONDITIONS

= I

T

TSM(1000)

= I

T

TSM(1000)

, TA = 25 °C

,

MIN TYP MAX UNIT

113

°C/W

50

NOTE 6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

PRODUCT INFORMATION

3

TISP4360H3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JUNE 1999

PARAMETER MEASUREMENT INFORMATION

-v
I

DRM

I

(BO)

V

Quadrant III

Switching

Characteristic

(BO)

+i

I

TSP

Characteristic

I

TSM

I

T

V

T

I

H

V

DRM

V

D

I

D

I

D

I

H

V

T

I

T

I

TSM

I

TSP

V

D

-i

Quadrant I

Switching

V

DRM

V

(BO)

I

DRM

PMXXAAB

I

(BO)

+v

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

PRODUCT INFORMATION

4

100

NORMALISED BREAKOVER VOLTAGE

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakover Voltage

0.95

1.00

1.05

1.10

TC4HAF

NORMALISED HOLDING CURRENT

vs

JUNCTION TEMPERATURE

T

- Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Holdi ng Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4HAD

10

0·1

| - Off-State Current - µA

D

|I
0·01

1

OFF-STATE CURRENT

vs

JUNCTION TEMPERATURE

VD = ±50 V

TISP4360H3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JUNE 1999

TYPICAL CHARACTERISTICS

TCHAG

0·001

-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C

Figure 2. Figure 3.

ON-STATE CURRE NT

ON-STATE VOLTAGE

200
150

TA = 25 °C

100

- On-State Current - A

T

I

= 100 µs

t

W

70
50

40
30

20
15

10

7
5

4
3

2

1.5
1

0.7 1.5 2 3 4 5 7110
VT - On-State Voltage - V

Figure 4. Figure 5.

vs

TC4HACA

PRODUCT INFORMATION

5