Power Innovations TISP4260M3LM, TISP4400M3LM, TISP4300M3LM, TISP4350M3LM, TISP4080M3LM Datasheet

TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,

device symbol

LMF PACKAGE

(LM PACKAGE WITH FORMED LEADS)

(TOP VIEW)

NC - No internal connection on pin 2

NC

T(A)

R(B)

MD4XAKB

1
2
3

LM PACKAGE

(TOP VIEW)

NC - No internal connection on pin 2

NC

T(A)

R(B)

MD4XAT

1
2
3

TISP4240M3LM THRU TISP4400M3LM

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED APRIL 1999Copyright © 1999, Power Innovations Limited, UK

TELECOMMUNICATION SYSTEM MEDIUM CURRENT OVERVOLTAGE PRO TECTORS

●

4 kV 10/700, 100 A 5/310 ITU-T K20/21 rating

●

Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge

V

DEVICE

‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4220 160 220
‘4240 180 240
‘4260 200 260
‘4300 230 300
‘4350 275 350
‘4400 300 400

●

Rated for International Surge Wave Shapes

WAV E SHAP E STANDARD

2/10 µs GR-1089-CORE 300
8/20 µs IEC 61000-4-5 220

10/160 µs FCC Part 68 120
10/700 µs
10/560 µs FCC Part 68 75

10/1000 µs GR-1089-CORE 50

●

Low Differential Capacitance . . . 43 pF max.

DRM

V

ITU-T K20/21

FCC Part 68

V

(BO)

V

I

TSP

A

100

T

R

Terminals T and R correspond to the
alternative line designators of A and B

●

Ordering Information

DEVICE TYPE PACKAGE TYPE

TISP4xxxM3LM Straight Lead DO-92 Bulk Pack
TISP4xxxM3LMR Straight Lead DO-92 Tape and Reeled
TISP4xxxM3LMFR Formed Lead DO-92 Tape and Reeled

SD4XAA

description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances whic h ar e ind uc ed or co ndu cte d on to the telephone li ne. A
single device provides 2-point protection and is typically u sed for the protec tion of 2 -wire tel ecommunicatio n
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

PRODUCT INFORMATION

Information is current as of publication date. Produc ts conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding cu rrent prevents d.c. latchup
as the diverted current subsides.

1

TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,

)

TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED APRIL 1999

description (continued

This TISP4xxxM3LM range consis ts of thirteen voltage variants to meet various maximum system voltage
levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed intern ational lightning
surges in both polar ities. Th ese protec tion devices are su pplied i n a DO-92 (LM) cylin drical plastic package.
The TISP4xxxM3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxM3LMF is a formed lead DO-92 supplied only on tape and reeled.

T

absolute maximum ratings,

Repetitive peak off-state voltage, (see Note 1)

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 300
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 120
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 110

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 100
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 100
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 100
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 100
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 75
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di
Junction temperature T
Storage temperature range T

= 25°C (unless otherwise noted)

A

RATING SYMBOL VALUE UNIT

‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400

V

DRM

I

TSP

I

TSM

/dt 300 A/µs

T

J

stg

± 58
± 65

± 75
±100
±120
±135
±145
±160
±180
±200
±230
±275
±300

30
32

2.1

-40 to +150 °C

-65 to +150 °C

V

A

A

NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.

2. Initially the TISP4xxxM3LM must be in thermal equilibrium with T

3. T he surge may be repeated after the TISP4xxxM3LM returns to its initial conditions.

4. See Applications Information and Figure 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wir ing
track widths. See Figure 8 for the current ratings at other durations. Derate current v alues at -0.61%/°C for ambient temperatures
above 25 °C

= 25°C.

J

PRODUCT INFORMATION

2

TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,

TISP4240M3LM THRU TISP4400M3LM

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED APRIL 1999

electrical characterist ics for the T and R terminals, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

DRM

V

(BO)

V

(BO)

I

(BO)

V

T

I

H

dv/dt
I

D

C

off

Repetitive peak off­state current

Breakover voltage dv/dt = ±750 V/ms, R

V

= ±V

D

DRM

SOURCE

= 300

Ω

dv/dt≤±1000 V/µs, Linear voltage ramp,
Impulse breakover
voltage

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

Breakover current dv/dt = ±750 V/ms, R

SOURCE

= 300

Ω

On-state voltage IT=±5A, tW= 100 µs ±3 V
Holding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 ±0.6 A
Critical rate of rise of
off-state voltage

Linear voltage ramp, Maximum ramp value < 0.85V
Off-state current VD=±50V TA = 85°C ±10 µA

Off-state capacitance

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

=1V rms, VD=0,

d

=1V rms, VD=-1V

d

=1V rms, VD=-2V

d

=1V rms, VD=-50V

d

=1V rms, VD= -100 V

d

(see Note 6)

TA = 25°C
T

A

DRM

‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400

= 85°C

‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400

±0.15 ±0.6 A

±5 kV/µs

86
60
54
80
56
50
74
52
46
36
26
20
20
16

±5
±10
±70
±80
±95

±125
±145
±165
±180
±220
±240
±260
±300
±350
±400

±78
±88

±102
±132
±151
±171
±186
±227
±247
±267
±308
±359
±410

110

80

70

96

74

64

90

70

60

47

36

30

30

24

µA

V

V

pF

NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with V

PRODUCT INFORMATION

=-98V.

D

3

TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,
TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED APRIL 1999

thermal characteristics

PARAMETER

EIA/JESD51-3 PCB, I

= 25 °C, (see Note 7)

T

R

Junction to free air thermal resistance

θ

JA

A

265 mm x 210 mm populated line card,
4-layer PCB, I

TEST CONDITIONS

= I

T

TSM(1000)

= I

T

TSM(1000)

, TA = 25 °C

,

MIN TYP MAX UNIT

120

°C/W

57

NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

PARAMETER MEASUREMENT INFORMATION

+i

I

TSP

Characteristic

I

TSM

I

T

V

T

I

H

V

I

DRM

DRM

-v

V

D

I

D

I

D

V

D

Quadrant I

Switching

V

DRM

V

(BO)

I

(BO)

I

DRM

+v

I

(BO)

V

Quadrant III

Switching

Characteristic

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

I

H

V

(BO)

T

I

T

I

TSM

I

TSP

-i

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

PMXXAAB

PRODUCT INFORMATION

4

100

NORMALISED BREAKOVER VOLTAGE

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakover Voltage

0.95

1.00

1.05

1.10

TC4MAF

NORMALISED HOLDING CURRENT

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Holdi ng Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4MAD

10

0·1

| - Off-State Current - µA

D

|I

0·01

1

TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,

OFF-STATE CURRENT

vs

JUNCTION TEMPERATURE

VD = ±50 V

TISP4240M3LM THRU TISP4400M3LM

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED APRIL 1999

TYPICAL CHARACTERISTICS

TCMAG

0·001

-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C

Figure 2. Figure 3.

ON-STATE CURRE NT

100

TA = 25 °C

70

t

W

50
40

30
20

15
10

7
5

- On-State Current - A

T

4

I

3
2

1.5
1

0.7 1.5 2 3 4 5 7110

ON-STATE VOLTAGE

= 100 µs

'4125
THRU
'4220

'4240
THRU
'4400

VT - On-State Voltage - V

Figure 4. Figure 5.

vs

'4070
THRU
'4095

TC4MAJ

PRODUCT INFORMATION

5