Power Innovations TISP4260F3LM, TISP4380F3LM, TISP4290F3LM, TISP4320F3LM, TISP4082F3LM Datasheet
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TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
device symbol
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
LM PACKAGE
(TOP VIEW)
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAT
1
2
3
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999Copyright © 1999, Power Innovations Limited, UK
DRM
V
V
(BO)
V
I
TSP
A
DEVICE
‘4072 58 72
‘4082 66 82
‘4125 100 125
‘4150 120 150
‘4180 145 180
‘4240 180 240
‘4260 200 260
‘4290 220 290
‘4320 240 320
‘4380 270 380
●
Rated for International Surge Wave Shapes
WAV E SHAP E STANDARD
10/160 µs FCC Part 68 60
0.5/700 µs I3124 38
10/700 µs ITU-T K20/21 50
10/560 µs FCC Part 68 45
10/1000 µs REA PE-60 35
●
Ordering Information
DEVICE TYPE PACKAGE TYPE
TISP4xxxF3LM Straight Lead DO-92 Bulk Pack
TISP4xxxF3LMR Straight Lead DO-92 Tape and Reeled
TISP4xxxF3LMFR Formed Lead DO-92 Tape and Reeled
V
T
R
Terminals T and R correspond to the
alternative line designators of A and B
SD4XAA
description
PRODUCT INFORMATION
Information is current as of publication date. Produc ts conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances whic h ar e ind uc ed or co ndu cte d on to the telephone li ne. A
single device provides 2-point protection and is typically u sed for the protec tion of 2 -wire tel ecommunicatio n
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding cu rrent prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LM range consists of te n voltage variants to meet various maximum s ystem voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The
1
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
)
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
description (continued
TISP4xxxF3LM is a straigh t lead DO- 92 sup plied in bulk pack and on ta pe and r eeled . The TISP4xx xF3LMF
is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings
RATING SYMBOL VALUE UNIT
‘4072
‘4082
‘4125
‘4150
Repetitive peak off-state voltage (0 °C < T
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082 175
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082 120
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 60
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape) 50
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape) 38
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape) 38
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape) 50
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 45
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape) 35
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only 80
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only 70
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Storage temperature range T
< 70 °C)
J
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
V
DRM
I
TSP
I
TSM
/dt 250 A/µs
T
J
stg
± 58
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
4A
-40 to +150 °C
-55 to +150 °C
V
A
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C < TJ<70°C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
PRODUCT INFORMATION
2
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
electrical characterist ics for the T and R terminals, TJ = 25 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
V
V
I
V
I
dv/dt
I
C
Repetitive peak off-
DRM
state current
Breakover voltage dv/dt = ±250 V/ms, R
(BO)
Impulse breakover
(BO)
voltage
Breakover current dv/dt = ±250 V/ms, R
(BO)
On-state voltage IT=±5A, tW= 100 µs ±3 V
T
Holding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 A
H
Critical rate of rise of
off-state voltage
Off-state current VD=±50V ±10 µA
D
Off-state capacitance
off
= ±V
V
D
dv/dt = ±1000 V/µs, R
di/dt < 20 A/µs
Linear voltage ramp, Maximum ramp value < 0.85V
f = 100 kHz, V
f = 100 kHz, V
, 0 °C < TJ < 70 °C ±10 µA
DRM
Ω
= 300
SOURCE
Ω,
=50
SOURCE
Ω
= 300
SOURCE
= 1 Vrms, VD=0,
d
= 1 Vrms, VD=-50V
d
DRM
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
±0.15 ±0.6 A
±5 kV/µs
63
43
44
25
15
11
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
108
74
74
40
25
20
V
V
pF
thermal characteristics
PARAMETER
R
Junction to free air thermal resistance
θ
JA
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
PRODUCT INFORMATION
TEST CONDITIONS
MIN TYP MAX UNIT
120 °C/W
3
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
-v
I
(BO)
V
Quadrant III
Switching
Characteristic
(BO)
+i
I
TSP
Characteristic
I
TSM
I
T
V
T
I
H
I
V
DRM
I
DRM
V
D
I
D
I
D
I
H
V
T
I
T
I
TSM
I
TSP
V
D
DRM
-i
Quadrant I
Switching
V
DRM
V
(BO)
PMXXAAB
I
(BO)
+v
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR R AND T TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE T TERMINAL
PRODUCT INFORMATION
4
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