Power Innovations TISP4265H4BJ, TISP4360H4BJ, TISP4300H4BJ, TISP4165H4BJ, TISP4200H4BJ Datasheet

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

device symbol

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

HIGH HOLDING CURRENT 100 A 10/1000 OVERVOLTAGE PROTECTORS

●

8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating

●

High Holding Current . . . . . . . . . 225 mA min.

●

Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge

V

DRM

DEVICE

‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4265 200 265
‘4300 230 300
‘4360 270 360

●

Rated for International Surge Wave Shapes

WAV E SHAP E STANDARD

2/10 µs GR-1089-CORE 500

8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K20/21 200
10/560 µs FCC Part 68 160

10/1000 µs GR-1089-CORE 100

MINIMUM

V

V

(BO)

MAXIMUM

V

I

TSP

A

NOVEMBER 1997 - REVISED MARCH 1999Copyright © 1999, Power Innovations Limited, UK

SMBJ PACKAGE

(TOP VIEW)

12

T

R

Terminals T and R correspond to the
alternative line designators of A and B

T(A)R(B)

MDXXBG

SD4XAA

●

description

Low Differential Capacitance . . . 39 pF max.

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances whic h ar e ind uc ed or co ndu cte d on to the telephone li ne. A
single device provides 2-point protection and is typically u sed for the protec tion of 2 -wire tel ecommunicatio n
equipment (e.g. between the Ri ng and Tip wires for telephones a nd modems ). Combinati ons of devices ca n
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding cu rrent prevents d.c. latchup
as the diverted current subsides.

This TISP4xxxH4BJ range consists of six voltage variants to meet various maxi mum system voltage levels
(135 V to 270 V). They are guaranteed to voltage li mit and withs tand the li sted inter nat ional li ghtning sur ges
in both polar ities. These high (H) current p rotection d evices are in a plastic package SMBJ (JEDEC DO­214AA with J-bend l eads) and supplied i n embossed carrier reel pack. For alternative voltage and holdin g
current values, consult the factory. For lower rated impulse curren ts in the SMB package, the 50 A 10/1000
TISP4xxxM3BJ series is available.

PRODUCT INFORMATION

Information is current as of publication date. Produc ts conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

T

absolute maximum ratings,

Repetitive peak off-state voltage, (see Note 1)

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A di
Junction temperature T
Storage temperature range T

= 25°C (unless otherwise noted)

A

RATING SYMBOL VALUE UNIT

‘4165
‘4180
‘4200
‘4265
‘4300
‘4360

V

DRM

I

TSP

I

TSM

/dt 400 A/µs

T

J

stg

±135
±145
±155
±200
±230
±270

55
60

2.1

-40 to +150 °C

-65 to +150 °C

V

A

A

NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.

2. Initially the TISP4xxxH4BJ must be in thermal equilibrium with T

3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.

4. See Applications Information and Figure 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current v alues at -0.61%/°C for ambient temperatures
above 25 °C

=25°C.

J

PRODUCT INFORMATION

2

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

electrical characterist ics for the T and R terminals, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

DRM

V

(BO)

V

(BO)

I

(BO)

V

T

I

H

dv/dt
I

D

C

off

Repetitive peak off­state current

Breakover voltage dv/dt = ±750 V/ms, R

V

= ±V

D

DRM

SOURCE

= 300

Ω

dv/dt≤±1000 V/µs, Linear voltage ramp,
Impulse breakover
voltage

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

Breakover current dv/dt = ±750 V/ms, R

SOURCE

= 300

Ω

On-state voltage IT=±5A, tW= 100 µs ±3 V
Holding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.225 ±0.8 A
Critical rate of rise of
off-state voltage

Linear voltage ramp, Maximum ramp value < 0.85V

DRM

Off-state current VD=±50V TA = 85°C ±10 µA

Off-state capacitance

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

=1V rms, VD=0,

d

=1V rms, VD=-1V

d

=1V rms, VD=-2V

d

=1V rms, VD=-50V

d

=1V rms, VD= -100 V

d

TA = 25°C

= 85°C

T

A

‘4165
‘4180
‘4200
‘4265
‘4300
‘4360
‘4165
‘4180
‘4200
‘4265
‘4300
‘4360

‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360

±0.15 ±0.8 A

±5 kV/µs

80
70
71
60
65
55
30
24
28
22

±5

±10
±165
±180
±200
±265
±300
±360
±174
±189
±210
±276
±311
±373

90
84
79
67
74
62
35
28
33
26

µA

V

V

pF

thermal characteristics

PARAMETER

EIA/JESD51-3 PCB, I

= 25 °C, (see Note 6)

T

R

Junction to free air thermal resistance

θ

JA

A

265 mm x 210 mm populated line card,
4-layer PCB, I

TEST CONDITIONS

= I

T

TSM(1000)

= I

T

TSM(1000)

, TA = 25 °C

,

NOTE 6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

MIN TYP MAX UNIT

113

°C/W

50

PRODUCT INFORMATION

3

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

PARAMETER MEASUREMENT INFORMATION

-v
I

DRM

I

(BO)

V

Quadrant III

Switching

Characteristic

(BO)

+i

I

TSP

Characteristic

I

TSM

I

T

V

T

I

H

V

DRM

V

D

I

D

I

D

I

H

V

T

I

T

I

TSM

I

TSP

V

D

-i

Quadrant I

Switching

V

DRM

V

(BO)

I

DRM

PMXXAAB

I

(BO)

+v

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

PRODUCT INFORMATION

4

100

NORMALISED BREAKOVER VOLTAGE

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakover Voltage

0.95

1.00

1.05

1.10

TC4HAF

NORMALISED HOLDING CURRENT

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Holdi ng Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4HAK

10

0·1

| - Off-State Current - µA

D

|I
0·01

VD = ±50 V

1

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TYPICAL CHARACTERISTICS

OFF-STATE CURRENT

vs

JUNCTION TEMPERATURE

NOVEMBER 1997 - REVISED MARCH 1999

TCHAG

0·001

-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C

Figure 2. Figure 3.

ON-STATE CURRENT

ON-STATE VOLTAGE

200
150

TA = 25 °C
t

100

- On-State Current - A

T

I

= 100 µs

W

70
50

40
30

20
15

10

7
5

4
3

2

1.5
1

0.7 1.5 2 3 4 5 7110

'4265
THRU
'4360

VT - On-State Voltage - V

Figure 4. Figure 5.

vs

'4165
THRU
'4200

TC4HAH

PRODUCT INFORMATION

5