Power Innovations TISP4125F3SL, TISP4125F3DR, TISP4125F3D, TISP4150F3SL, TISP4150F3DR Datasheet

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TISP4125F3, TISP4150F3, TISP4180F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Ion-Implanted Breakdown Region

Precise and Stable Voltage Low Voltage Overshoot under Surge

● Planar Passivated Junctions

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

● Surface Mount and Through-Hole Options

● UL Recognized, E132482

description

These medium voltage symmetrical transient voltage suppressor devices are designed to protect two wire telecommunication applications against transients caused by lightning strikes and a.c. power lines. Offered in three voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities.

Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The

DEVICE

DRM

(BO)

‘4125F3 100 125 ‘4150F3 120 150 ‘4180F3 145 180

WAVE SHAPE STANDARD

TSP

2/10 µs FCC Part 68 175

8/20 µs ANSI C62.41 120 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45

0.5/700 µs RLM 88 38

10/700 µs

FTZ R12

VDE 0433

CCITT IX K17/K20

50 50 50

10/1000 µs REA PE-60 35

PACKAGE PART # SUFFIX

Small-outline D

Small-outline taped

and reeled

Single-in-line SL

high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation

The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.

device symbol

SD4XAE

Terminals T and R correspond to the alternative line designators of A and B

R R R R

T T T

1234

6 7

D PACKAGE SL PACKAGE

D PACKAGE

(TOP VIEW)

SL PACKAGE

(TOP VIEW)

MDXXAI

1 2 3 4

R R R R

Specified ratings require the connection of pins 1, 2, 3 and 4 for the T terminal.

MDXXAH

MD4XAA

TISP4125F3, TISP4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C < T

<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTE 4: Further details on capacitance are given in the Applications Information section.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (0°C < T

< 70°C)

‘4125F3 ‘4150F3 ‘4180F3

DRM

± 100 ± 120 ± 145

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

TSP

1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 350 2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 175 8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 120 10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35

Non-repetitive peak on-state current(see Notes 2 and 3) D Package

TSM

A rms

50 Hz,1 s SL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di

/dt 250 A/µs

Junction temperature T

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

electrical characteristics for the T and R terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP4125F3 TISP4150F3

UNIT

MIN TYP

MAX MIN TYP MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ < 70°C ±10 ±10 µA

(BO)

Breakover voltage dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω ±125 ±150 V

(BO)

Impulse breakover voltage

dv/dt = ±1000 V/µs,R

SOURCE

= 50 Ω,

di/dt < 20 A/µs

±143 ±168 V

(BO)

Breakover current dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω ±0.15 ±0.6 ±0.15 ±0.6 A

On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 V

Holding current di/dt = +/-30 mA/ms ±0.15 ±0.15 A

dv/dt

Critical rate of rise of off-state voltage

Linear voltage ramp Maximum ramp value < 0.85V

(BR)MIN

±5 ±5 kV/µs

Off-state current VD= ±50 V ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV

(see Note 4)

= 0, 55 95 55 95 pF

= -5 V 30 50 30 50 pF

= -50 V 15 25 15 25 pF

electrical characteristics for the T and R terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP4180F3

UNIT

MIN TYP MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ < 70°C ±10 µA

MARCH 1994 - REVISED SEPTEMBER 1997

TISP4125F3, TISP4150F3, TISP4180F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

NOTE 5: Further details on capacitance are given in the Applications Information section.

(BO)

Breakover voltage dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω ±180 V

(BO)

Impulse breakover voltage

dv/dt = ±1000 V/µs,R

SOURCE

= 50 Ω,

di/dt < 20 A/µs

±198 V

(BO)

Breakover current dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω ±0.15 ±0.6 A

On-state voltage IT= ±5 A,tW= 100 µs ±3 V

Holding current di/dt = +/-30 mA/ms ±0.15 A

dv/dt

Critical rate of rise of off-state voltage

Linear voltage ramp Maximum ramp value < 0.85V

(BR)MIN

±5 kV/µs

Off-state current VD= ±50 V ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV

(see Note 5)

= 0, 55 95 pF

= -5 V 30 50 pF

= -50 V 15 25 pF

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

θJA

Junction to free air thermal resistance

tot

= 0.8 W,TA= 25°C

5 cm

, FR4 PCB

D Package 160

°C/W

SL Package 105

electrical characteristics for the T and R terminals, TJ = 25°C (continued)

PARAMETER TEST CONDITIONS

TISP4180F3

UNIT

MIN TYP MAX

PARAMETER MEASUREMENT INFORMATIO

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINA

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Switching

Characteristic

(BO)

(BR)

(BR)M

DRM

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAA

TISP4125F3, TISP4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 2. Figure 3.

Figure 4. Figure 5.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

- Off-State Current - µA

0·001

0·01

0·1

100

TC3MAF

JUNCTION TEMPERATURE

VD = -50 V

VD = 50 V

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3MAI

JUNCTION TEMPERA TURE

(BO)

(BR)

(BR)M

Positive Polarity

Normalised to V

(BR)

= 100 µA and 25°C

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3HAJ

JUNCTION TEMPERATURE

(BO)

(BR)

(BR)M

Negative Polarity

Normalised to V

(BR)

= 100 µA and 25°C

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

- On-State Current - A

100

TC3MAL

ON-STATE VOLTAGE

-40°C

150°C

25°C

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