Power Innovations TISP4082LP Datasheet
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MAY 1996 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
TISP4082LP
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
V
VV
(Z)
DEVICE
‘4082LP 58 82
(BO)
V
● Planar Passivated Junctions
Low Off-State Current<10 µA
● Rated for International Surge Wave Shapes
I
WAVE SHAPE STANDARD
10/700 µs CCITT IX K17 25
TSP
A
● Package Options
PACKAGE PACKING PART # SUFFIX
LP Bulk None
LP with fomed leads Tape and Reel R
description
The TISP4082LP is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of a bidirectional
suppressor element connecting the A and B
terminals. They will suppress inter-wire voltage
transients.
A(T)
NC
B(R)
A(T)
NC
B(R)
device symbol
LP PACKAGE
(TOP VIEW)
NC - No internal connection
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
NC - No internal connection
1
2
3
MDTRAB
1
2
3
MD4XAF
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4082LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MAY 1996 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C case temperature (unless otherwise noted))
RATING SYMBOL VALUE UNIT
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
5/310 µs(CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs) 25
Non-repetitive peak on-state current, 50 Hz, 1 s(see Notes 1 and 2) I
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Operating free - air temperature range 0 to 70 °C
Storage temperature range T
Lead temperature 1.5 mm from case for 10 s T
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics, TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Temperature coefficient
∝
V
Z
of reference voltage
Breakover voltage (see Notes 4 and 5) ± 82 V
V
(BO)
Breakover current (see Note 4) ± 0.15 ± 0.6 A
I
(BO)
Peak on-state voltage IT = ± 5 A (see Notes 4 and 5) ± 2.2 ± 3 V
V
TM
Holding current (see Note 4) ± 150 mA
I
H
Critical rate of rise of
dv/dt
off-state voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz 110 200 pF
C
off
NOTES: 4. These parameters must be measured using pulse techniques, t
5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
6. Linear rate of rise, maximum voltage limited to 80 % V
.
= ± 1mA ± 58 V
I
Z
(see Note 6)
= ± 50 V ± 10 µA
V
D
= 100 µs, duty cycle ≤ 2%.
w
(minimum).
Z
I
TSP
TSM
/dt 250 A/µs
T
J
stg
lead
2.5 A rms
150 °C
-40 to +150 °C
260 °C
0.1 %/
± 5 kV/µs
A
o
C
thermal characteristics
PARAMETER MIN TYP MAX UNIT
Junction to free air thermal resistance 156 °C/W
R
θJA
PRODUCT INFORMATION
2
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MAY 1996 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
TISP4082LP
Figure 1. VOLTAGE-CURRENT CHARACTERISTICS FOR TERMINALS A AND B
PRODUCT INFORMATION
3
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