Power Innovations TISP4082 Datasheet

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

APRIL 1987 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

TISP4082

● Ion-Implanted Breakdown Region

Precise and Stable Voltage
Low Voltage Overshoot under Surge

V

VV

(Z)

DEVICE

‘4082 58 82

● Planar Passivated Junctions

(BO)

V

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

I

WAVE SHAPE STANDARD

8/20 µs ANSI C62.41 150
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45

0.2/310 µs RLM 88 38
FTZ R12

10/700 µs

10/1000 µs REA PE-60 40

● UL Recognized, E132482

VDE 0433

CCITT IX K17/K20

TSP

A

50
50
50

DO-220 PACKAGE

(TOP VIEW)

A(T)

B(R)

Pin 1 is in electrical contact with the mounting base.

1

2

device symbol

MD4XAB

description

The TISP4082 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of a bidirectional
suppressor element connecting the A and B
terminals. They will suppress inter-wire voltage
transients.

Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.

These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TISP4082
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

APRIL 1987 - REVISED SEPTEMBER 1997

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45

10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 40
Non-repetitive peak on-state current, 50 Hz, 2.5 s(see Notes 1 and 2) I
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Operating free - air temperature range 0 to 70 °C
Storage temperature range T
Lead temperature 1.5 mm from case for 10 s T

NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature

2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.

3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.

.

electrical characteristics, TJ = 25°C

I

TSP

TSM

/dt 250 A/µs

T

J

stg

lead

10 A rms

150 °C

-40 to +150 °C
260 °C

A

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Reference zener

V

Z

voltage
Temperature coefficient

∝

V

Z

of reference voltage
Breakover voltage (see Notes 4 and 5) ± 82 V

V

(BO)

Breakover current (see Note 4) ± 0.15 ± 0.6 A

I

(BO)

Peak on-state voltage IT = ± 5 A (see Notes 4 and 5) ± 2.2 ± 3 V

V

TM

Holding current (see Note 4) ± 150 mA

I

H

Critical rate of rise of

dv/dt

off-state voltage
Off-state leakage

I

D

current
Off-state capacitance VD = 0 f = 1 kHz 110 200 pF

C

off

= ± 1mA ± 58 V

I

Z

(see Note 6)

= ± 50 V ± 10 µA

V

D

NOTES: 4. These parameters must be measured using pulse techniques, t

5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.

6. Linear rate of rise, maximum voltage limited to 80 % V

.

(minimum).

Z

thermal characteristics

PARAMETER MIN TYP MAX UNIT

Junction to free air thermal resistance 62.5 °C/W

R

θJA

= 100 µs, duty cycle ≤ 2%.

w

0.1 %/

± 5 kV/µs

o

C

PRODUCT INFORMATION

2