Power Innovations TISP4265M3BJ, TISP4400M3BJ, TISP4300M3BJ, TISP4350M3BJ, TISP4080M3BJ Datasheet

TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,

device symbol

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TELECOMMUNICATION SYSTEM 50 A 10/1000 OVERVOLTAGE PROTECTORS

●

4 kV 10/700, 100 A 5/310 ITU-T K20/21 rating

●

Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge

V

DEVICE

‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4240 180 240
‘4265 200 265
‘4300 230 300
‘4350 275 350
‘4400 300 400

DRM

V

V

(BO)

V

TISP4240M3BJ THRU TISP4400M3BJ

NOVEMBER 1997 - REVISED MARCH 1999Copyright © 1999, Power Innovations Limited, UK

SMBJ PACKAGE

(TOP VIEW)

12

T

R

erminals T and R cor respond to the

T
alternative line designators of A and B

T(A)R(B)

MDXXBG

SD4XAA

●

Rated for International Surge Wave Shapes

I

WAV E SHAP E STANDARD

2/10 µs GR-1089-CORE 300

8/20 µs IEC 61000-4-5 220
10/160 µs FCC Part 68 120
10/700 µs ITU-T K20/21 100
10/560 µs FCC Part 68 75

10/1000 µs GR-1089-CORE 50

●

Low Differential Capacitance . . . 43 pF max.

●

UL Recognized, E132482

TSP

A

description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances whic h ar e ind uc ed or co ndu cte d on to the telephone li ne. A
single device provides 2-point protection and is typically u sed for the protec tion of 2 -wire tel ecommunicatio n
equipment (e.g. between the Ri ng and Tip wires for telephones a nd modems ). Combinati ons of devices ca n
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding cu rrent prevents d.c. latchup
as the diverted current subsides.

PRODUCT INFORMATION

Information is current as of publication date. Produc ts conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

This TISP4xxxM3BJ range con sists of thirteen voltage variants to meet vario us maximum system voltage
levels (58 V to 275 V). They are guaranteed to voltage limi t and withstand the listed inter national lightning
surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ
(JEDEC DO-214AA with J- be nd l ead s) an d s uppl ie d i n em bos se d tap e reel pa ck. For altern ati ve voltage and
holding current values, cons ult th e factor y. For higher ra ted im pulse c urren ts in t he SM B pa ckage, the 100 A
10/1000 TISP4xxxH3BJ series is available.

T

absolute maximum ratings,

Repetitive peak off-state voltage, (see Note 1)

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 300
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 120
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 110

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 100
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 100
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 100
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 75
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di
Junction temperature T
Storage temperature range T

= 25°C (unless otherwise noted)

A

RATING SYMBOL VALUE UNIT

‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4200
‘4240
‘4265
‘4300
‘4350
‘4400

V

DRM

I

TSP

I

TSM

/dt 300 A/µs

T

J

stg

± 58
± 65

± 75
±100
±120
±135
±145
±155
±180
±200
±230
±275
±300

30
32

2.1

-40 to +150 °C

-65 to +150 °C

V

A

A

NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.

2. Initially the TISP4xxxM3BJ must be in thermal equilibrium with T

3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.

4. See Applications Information and Figure 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current v alues at -0.61%/°C for ambient temperatures
above 25 °C

= 25°C.

J

PRODUCT INFORMATION

2

TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,

TISP4240M3BJ THRU TISP4400M3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

electrical characterist ics for the T and R terminals, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

DRM

V

(BO)

V

(BO)

I

(BO)

V

T

I

H

dv/dt
I

D

C

off

Repetitive peak off­state current

Breakover voltage dv/dt = ±750 V/ms, R

= V

V

D

DRM

Ω

= 300

SOURCE

dv/dt≤±1000 V/µs, Linear voltage ramp,
Impulse breakover
voltage

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

Breakover current dv/dt = ±750 V/ms, R

SOURCE

= 300

Ω

On-state voltage IT=±5A, tW= 100 µs ±3 V
Holding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 ±0.6 A
Critical rate of rise of
off-state voltage

Linear voltage ramp, Maximum ramp value < 0.85V
Off-state current VD=±50V TA = 85°C ±10 µA

Off-state capacitance

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

f = 100 kHz, V

=1V rms, VD=0,

d

=1V rms, VD=-1V

d

=1V rms, VD=-2V

d

=1V rms, VD=-50V

d

=1V rms, VD= -100 V

d

(see Note 6)

TA = 25°C
T

A

DRM

‘4070 thru ‘4095
‘4125 thru ‘4200
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4200
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4200
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4200
‘4240 thru ‘4400
‘4125 thru ‘4200
‘4240 thru ‘4400

= 85°C

‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4200
‘4240
‘4265
‘4300
‘4350
‘4400
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4200
‘4240
‘4265
‘4300
‘4350
‘4400

±0.15 ±0.6 A

±5 kV/µs

86
60
54
80
56
50
74
52
46
36
26
20
20
16

±5
±10
±70
±80
±95

±125
±145
±165
±180
±200
±240
±265
±300
±350
±400

±78
±88

±102
±132
±151
±171
±186
±207
±247
±272
±308
±359
±410

110

80

70

96

74

64

90

70

60

47

36

30

30

24

µA

V

V

pF

NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with V

PRODUCT INFORMATION

=-98V.

D

3

TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

thermal characteristics

PARAMETER

EIA/JESD51-3 PCB, I

= 25 °C, (see Note 7)

T

R

Junction to free air thermal resistance

θ

JA

A

265 mm x 210 mm populated line card,
4-layer PCB, I

TEST CONDITIONS

= I

T

TSM(1000)

= I

T

TSM(1000)

, TA = 25 °C

,

MIN TYP MAX UNIT

115

°C/W

52

NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

PARAMETER MEASUREMENT INFORMATION

+i

I

TSP

Characteristic

I

TSM

I

T

V

T

I

H

V

I

DRM

DRM

-v

V

D

I

D

I

D

V

D

Quadrant I

Switching

V

DRM

V

(BO)

I

(BO)

I

DRM

+v

I

(BO)

V

Quadrant III

Switching

Characteristic

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

I

H

V

(BO)

T

I

T

I

TSM

I

TSP

-i

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

PMXXAAB

PRODUCT INFORMATION

4

100

NORMALISED BREAKOVER VOLTAGE

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakover Voltage

0.95

1.00

1.05

1.10

TC4MAF

NORMALISED HOLDING CURRENT

vs

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Holdi ng Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4MAD

10

0·1

| - Off-State Current - µA

D

|I

0·01

1

TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,

OFF-STATE CURRENT

vs

JUNCTION TEMPERATURE

VD = ±50 V

TISP4240M3BJ THRU TISP4400M3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED MARCH 1999

TYPICAL CHARACTERISTICS

TCMAG

0·001

-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C

Figure 2. Figure 3.

ON-STATE CURRENT

ON-STATE VOLTAGE

100

TA = 25 °C

70

t

= 100 µs

W

50
40

30
20

15
10

7
5

- On-State Current - A

4

T

I

3
2

1.5
1

0.7 1.5 2 3 4 5 7110

'4125
THRU
'4200

'4240
THRU
'4400

VT - On-State Voltage - V

Figure 4. Figure 5.

vs

'4070
THRU
'4095

TC4MAC

PRODUCT INFORMATION

5