Power Innovations TISP4082F3SL, TISP4082F3D, TISP4082F3DR, TISP4072F3SL, TISP4072F3D Datasheet
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TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
1
MARCH 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
● Planar Passivated Junctions
Low Off-State Current<10 µA
● Rated for International Surge Wave Shapes
● Surface Mount and Through-Hole Options
● UL Recognized, E132482
description
These low voltage symmetrical transient voltage
suppressor devices are designed to protect two
wire telecommunication applications against
transients caused by lightning strikes and a.c.
power lines. Offered in two voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities.
Transients are initially clipped by breakdown
clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The
high crowbar holding current prevents d.c.
latchup as the current subsides.
DEVICE
V
DRM
V
V
(BO)
V
‘4072F3 58 72
‘4082F3 66 82
WAVE SHAPE STANDARD
I
TSP
A
2/10 µs FCC Part 68 80
8/20 µs ANSI C62.41 70
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.5/700 µs RLM 88 38
10/700 µs
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 µs REA PE-60 35
PACKAGE PART # SUFFIX
Small-outline D
Small-outline taped
and reeled
DR
Single-in-line SL
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
The small-outline 8-pin assignment has been
carefully chosen for the TISP series to maximise
the inter-pin clearance and creepage distances
which are used by standards (e.g. IEC950) to
establish voltage withstand ratings.
device symbol
T
SD4XAE
Terminals T and R correspond to the
alternative line designators of A and B
R R R R
T T T
1234
5
6 7
8
T
R
D PACKAGE SL PACKAGE
1
2
D PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAI
1
2
3
4
5
6
7
8
R
R
R
R
T
T
T
T
Specified ratings require the connection
of pins 1, 2, 3 and 4 for the T terminal.
1
2
T
R
MDXXAH
MD4XAA
TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
NOTE 4: Further details on capacitance are given in the Applications Information section.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘4072F3
‘4082F3
V
DRM
± 58
± 66
V
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
I
TSP
A
1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120
2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35
Non-repetitive peak on-state current(see Notes 2 and 3) D Package
I
TSM
4
A rms
50 Hz,1 s SL Package 6
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
T
/dt 250 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-40 to +150 °C
electrical characteristics for the T and R terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP4072F3 TISP4082F3
UNIT
MIN TYP
MAX MIN TYP MAX
I
DRM
Repetitive peak offstate current
V
D
= ±V
DRM
, 0°C < TJ < 70°C ±10 ±10 µA
V
(BO)
Breakover voltage dv/dt = ±250 V/ms,R
SOURCE
= 300 Ω ±72 ±82 V
V
(BO)
Impulse breakover voltage
dv/dt = ±1000 V/µs,R
SOURCE
= 50 Ω,
di/dt < 20 A/µs
±86 ±96 V
I
(BO)
Breakover current dv/dt = ±250 V/ms,R
SOURCE
= 300 Ω ±0.15 ±0.6 ±0.15 ±0.6 A
V
T
On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 V
I
H
Holding current di/dt = +/-30 mA/ms ±0.15 ±0.15 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
±5 ±5 kV/µs
I
D
Off-state current VD= ±50 V ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,V
d
= 100 mV
(see Note 4)
V
D
= 0, 82 140 82 140 pF
V
D
= -5 V 49 85 49 85 pF
V
D
= -50 V 25 40 25 40 pF
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
R
θJA
Junction to free air thermal resistance
P
tot
= 0.8 W,TA= 25°C
5 cm
2
, FR4 PCB
D Package 160
°C/W
SL Package 105
3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
PARAMETER MEASUREMENT INFORMATIO
N
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINA
L
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
R and T terminals
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRENT
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - µA
0·001
0·01
0·1
1
10
100
TC3LAF
JUNCTION TEMPERATURE
vs
VD = -50 V
VD = 50 V
NORMALISED BREAKDOWN VOLTAGES
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakdown Voltages
0.9
1.0
1.1
1.2
TC3LAI
JUNCTION TEMPERA TURE
vs
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
NORMALISED BREAKDOWN VOLTAGES
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakdown Voltages
0.9
1.0
1.1
1.2
TC3LAJ
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)M
Negative Polarity
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
ON-STATE CURRENT
VT - On-State Voltage - V
2 3 4 5 6 7 8 91 10
I
T
- On-State Current - A
1
10
100
TC3MAL
ON-STATE VOLTAGE
vs
-40°C
150°C
25°C
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