Power Innovations TISP4350L3, TISP4070L3 Datasheet

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

device symbol

FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS

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MODEM Protection against: — FCC Part 68 Type A & B surge — UL 1950, Clause 6. powe r cross — CSA 22.2 No. 950, Clause 6. power cross

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Ring-Tip Protection...............TISP4350L3BJ

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Electronics Protection ..........TISP4070L3BJ

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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

DEVICE

‘4070 58 70 ‘4350 275 350

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Rated for UL 1950 and Part 68 Wave Shapes

SURGE

TYPE

A FCC Part 68

DRM

STANDARD

FCC Part 68

UL 1950 / ITU-T K21

(BO)

WAVE

SHAPE

10/160 µs 50 10/560 µs 30

9/720 µs

10/700 µs

TSP

TISP4070L3BJ, TISP4350L3BJ

SMBJ PACKAGE

(TOP VIEW)

erminals T and R cor respond to the

alternative line designators of A and B

T(A)R(B)

MDXXBG

SD4XAA

description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances whic h ar e ind uc ed or co ndu cte d on to the telephone li ne. A single device provides 2-point protection and is typically u sed for the protec tion of 2 -wire tel ecommunicatio n equipment (e.g. between the Ri ng and Tip wires for telephones a nd modems ). Combinati ons of devices ca n be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding cu rrent prevents d.c. latchup as the diverted c urrent subsides.These protectors are guaranteed t o voltage limit and wi thstand the listed lightning surges in both polarities.

After a Type A surge the equipment can be faulty, provided that the fault mode causes the equ ipment to be unusable. The high current Type A surges (10/160, 200 A an d 10/560, 100 A), will cause the TISP 4xxxL3 BJ to fail short circuit, giving a non-operational equipment pass to Type A surges.

After a Type B surge the equi pment must be operational . As the TISP4x xxL3 BJ h as a c urrent rating o f 40 A, will survive both Type B surges, metallic (differential mode 25 A, 9/720) and longitudinal (common mode

37.5 A, 9/720), giving an operational pass to Type B surges. For metallic protection, the TISP4350L3BJ is connected between the Ring and Tip conductors. For

longitudinal protection two TISP43 50L3BJ protectors are used; one between the Rin g conductor to ground and the other between the Tip conduc tor to ground. The B type r inger has voltages of 56. 5 V d.c. and up to

PRODUCT INFORMATION

Information is current as of publication date. Produc ts conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TISP4070L3BJ, TISP4350L3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

AUGUST 1999 — REVISED NOVEMBER 1999

150 V rms a.c., giving a peak voltage of 269 V. The TISP4350L3BJ will not clip the B type ringing voltage as it has a high impedance up to 275 V.

The TISP4070L3BJ should be connected after the hook switch to protect the following electronics. As the TISP4070L3BJ has a high imp edance up to 58 V, it will switch off after a surge and not be triggered by the normal exchange battery voltage

These low (L) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consu lt the factory. For higher rated impuls e curr ents i n the S MB package, the 100 A 10/1000 TI SP4xxx H3BJ ser ies is available.

absolute maximum ratings,

Repetitive peak off-state voltage, Non-repetitive peak on-state pulse current (see Notes 1, and 2)

10/160 µs (FCC Part 68, 10/160 µs voltage wave shape, Type A) 50 5/310 µs (ITU-T K21, 10/700 µs voltage wave shape) 40 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape, Type B) 40 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape, Type A) 30

Non-repetitive peak on-state current (see Notes 1, 2 and 3)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di Junction temperature T Storage temperature range T

= 25 °C (unless otherwise noted)

RATING SYMBOL VALUE UNIT

‘4070 ‘4350

DRM

TSP

TSM

/dt 120 A/µs

stg

± 58

±275

12 13

-40 to +150 °C

-65 to +150 °C

NOTES: 1. Initially the TISP4xxxL3BJ must be in thermal equilibrium with T

2. The surge may be repeated after the TISP4xxxL3BJ returns to its initial conditions.

3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25°C

overload ratings,

Peak ov erload on-state current, Type A impulse (see Note 4) 10/160 µs 10/560 µs

Peak overload on-state current, a.c. power cross tests UL 1950 (see Note 4) I

NOTE 4: These electrical stress levels may damage the TIS4xxxL3BJ silicon chip. After test, the pass criterion is either that the device is

functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.

= 25 °C (unless otherwise noted)

RATING SYMBOL VALUE UNIT

=25°C.

T(OV)M

300 150

See Figure 2

for cu rrent

versus time

PRODUCT INFORMATION

TISP4070L3BJ, TISP4350L3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

AUGUST 1999 — REVISED NOVEMBER 1999

electrical characterist ics for the T and R terminals, TA = 25 °C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

DRM

(BO)

dv/dt I

off

Repetitive peak offstate current

Breakover voltage dv/dt = ±250 V/ms , R

= V

DRM

Ω

= 300

SOURCE

dv/dt≤±1000 V/µs, Linear voltage ramp, Impulse breakover voltage

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A Breakover current dv/dt = ±250 V/ms, R

SOURCE

= 300

Ω

On-state voltage IT=±5A, tW= 100 µs ±3 V Holding current IT= ±5 A, di/dt = +/-30mA/ms ±120 ±350 mA Critical rate of rise of off-state voltage

Linear voltage ramp, Maximum ramp value < 0.85V Off-state current VD=±50V TA = 85 °C ±10 µA

Off-state capacitance

f = 100 kHz , V

f = 100 kHz, V

=1V rms, VD=0

=1V =5V

DRM

TA = 25 °C

= 85 °C

‘4070 ‘4350

‘4070

‘4350

±40 ±250 mA

±5 kV/µs

40 38 31 26 24 20

±5 ±10 ±70

±350

±78

±359

µA

thermal characteristics

PARAMETER

EIA/JESD51-3 PCB, I T

= 25 °C, (see Note 5)

Junction to free air thermal resistance

265 mm x 210 mm populated line card, 4-layer PCB, I

TEST CONDITIONS

= I

TSM(1000)

= I

TSM(1000)

, TA = 25 °C

NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

MIN TYP MAX UNIT

115

°C/W

PRODUCT INFORMATION

TISP4070L3BJ, TISP4350L3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

AUGUST 1999 — REVISED NOVEMBER 1999

PARAMETER MEASUREMENT INFORMATION

-v I

DRM

(BO)

Quadrant III

Switching

Characteristic

(BO)

TSP

Characteristic

TSM

DRM

TSM

TSP

-i

Quadrant I

Switching

DRM

(BO)

DRM

PMXXAAB

(BO)

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

PRODUCT INFORMATION

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

THERMAL INFORMATION

PEAK OVERLOAD O N-STATE CURRENT

40 35

30 25

40 A

20 15

9 8 7

6 5

3.5 3

— Peak Overload On-State Current — A rms

2.5

T(OV)M

0·01 0·1 1 10 100 1000

CURRENT DURATION

TISP4xxxL3BJ WILL

CARRY CURRENT

100 A2s

WIRING

SIMULATOR

t - Current Duration - s

OF TESTS 1 THRU 5 CLAUSE 6.6, UL 1950, FOR FULL TEST TIME

7 A

TISP4070L3BJ, TISP4350L3BJ

AUGUST 1999 — REVISED NOVEMBER 1999

TI4LAA

2.2 A

Figure 2. PEAK OVERLOAD ON-STATE CURRENT AGAINST DURATION

APPLICATIONS INFORMATION

UL 1950, CSA C22.2 No. 950 and EN 60950

These electrical safety standar ds for IT (Informatio n Technology) equipment at the cus to mer pr em is e use the IEC (International Electro-technical Commission) 60950 standard as the core document. The IEC 60950 covers fundamental safety criter ia such as creepage an d isolation. The connec tion to a telecommunicatio n network voltage (TNV) is covered in clause 6.

Europe is harmonised by CENELEC (Comité Européen de Normalization Electro-technique) under EN 60950 (included in the L ow Voltage Directive, CE mark). US has UL (Underwr iters Laborator ies) 1 950 and Ca nada CSA (Canadian Standards Authority) C22.2 No. 950. The US and Canadian standards include regional changes and additions to the IEC 60950. A major addition is the inclusion of clause 6.6, power cross withstand and ann ex NAC covering t esting. Remar ks made for UL 1950 will generally be true for CSA 22.2 No. 950.

UL 1950, clause 6.6 — power cross

Figure 3 shows the cr iterion flow for UL 1950 power cross. (This is a modified version of UL1950 , Figure 18b — Overvoltage flowchart) There are many routes for achieving a pass result. For discussion, each criterion has been given a letter reference. Brief details of any electr ical testing is given as a cr iterion note. Test pass criteria are given in the bottom table of Figure 3.

PRODUCT INFORMATION

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