Power Innovations TISP3290L Datasheet
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
V
VV
(Z)
DEVICE
‘3290L 200 290
● Planar Passivated Junctions
Low Off-State Current<10 µA
● Rated for International Surge Wave Shapes
WAVE SHAPE STANDARD
8/20 µs ANSI C62.41 150
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.2/310 µs RLM 88 38
10/700 µs
10/1000 µs REA PE-60 35
(BO)
V
FTZ R12
VDE 0433
CCITT IX K17/K20
I
TSP
A
50
50
50
TISP3290L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
device symbol
● UL Recognized, E132482
description
The TISP3290L is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of two bidirectional
suppressor elements connected to a Common
(C) terminal. They will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP3290L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35
Non-repetitive peak on-state current, 50 Hz, 0.7 s(see Notes 1 and 2) I
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Operating free - air temperature range 0 to 70 °C
Storage temperature range T
Lead temperature 1.5 mm from case for 10 s T
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics for the A and B terminals, TJ = 25°C
I
TSP
TSM
/dt 250 A/µs
T
J
stg
lead
10 A rms
150 °C
-40 to +150 °C
260 °C
A
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz (see Note 4) 0.5 5 pF
C
off
= ± 1mA ± 400 V
I
Z
= ± 50 V ± 10 µA
V
D
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
electrical characteristics for the A and C or the B and C terminals, TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Temperature coefficient
∝
V
Z
of reference voltage
Breakover voltage (see Notes 5 and 6) ± 290 V
V
(BO)
Breakover current (see Note 5) ± 0.15 ± 0.6 A
I
(BO)
Peak on-state voltage IT = ± 5 A (see Notes 5 and 6) ± 1.9 ± 3 V
V
TM
Holding current (see Note 5) ± 150 mA
I
H
Critical rate of rise of
dv/dt
off-state voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz (see Note 4) 70 150 pF
C
off
NOTES: 5. These parameters must be measured using pulse techniques, t
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
= ± 1mA ± 200 V
I
Z
0.1 %/
(see Note 7)
= ± 50 V ± 10 µA
V
D
= 100 µs, duty cycle ≤ 2%.
w
(minimum).
Z
± 5 kV/µs
o
C
PRODUCT INFORMATION
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