Power Innovations TISP3290F3SL, TISP3290F3P, TISP3290F3DR, TISP3290F3D, TISP3260F3SL Datasheet
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TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
1
MARCH 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
● Planar Passivated Junctions
Low Off-State Current<10 µA
● Rated for International Surge Wave Shapes
● Surface Mount and Through-Hole Options
● UL Recognized, E132482
description
These high voltage dual symmetrical transient
voltage suppressor devices are designed to
protect telecommunication applications with
ground backed ringing against transients caused
by lightning strikes and a.c. power lines. Offered
in five voltage variants to meet battery and
protection requirements they are guaranteed to
suppress and withstand the listed international
lightning surges in both polarities. Transients are
initially clipped by breakdown clamping until the
voltage rises to the breakover level, which
DEVICE
V
DRM
V
V
(BO)
V
‘3240F3 180 240
‘3260F3 200 260
‘3290F3 220 290
‘3320F3 240 320
‘3380F3 270 380
WAVE SHAPE STANDARD
I
TSP
A
2/10 µs FCC Part 68 175
8/20 µs ANSI C62.41 120
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.5/700 µs RLM 88 38
10/700 µs
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 µs REA PE-60 35
PACKAGE PART # SUFFIX
Small-outline D
Small-outline taped
and reeled
DR
Plastic DIP P
Single-in-line SL
causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the
current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
device symbol
G
T
R
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SD3XAA
D PACKAGE
(TOP VIEW)
P PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAE
1
2
3
4
5
6
7
8 G
G
G
G
NC
T
R
NC
NC - No internal connection
1
2
3
4 5
6
7
8
R
G
T
G
T
G
G
R
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MDXXAF
1
2
3
T
G
R
MDXXAG MD23AA
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
ensure precise and matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8 pin assignment has been carefully chosen for the TISP series to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
V
DRM
± 180
± 200
± 220
± 240
± 270
V
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
I
TSP
A
1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 350
2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 175
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 120
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.5/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35
Non-repetitive peak on-state current(see Notes 2 and 3) D Package
I
TSM
4
A rms50 Hz,1 s P Package 6
SL Package 6
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
F
/dt 250 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-40 to +150 °C
electrical characteristics for the T and R terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP3240F3 TISP3260F3 TISP3290F3
UNIT
MIN MAX MIN MAX MIN MAX
I
DRM
Repetitive peak offstate current
V
D
= ±2V
DRM
, 0°C < TJ < 70°C ±10 ±10 ±10 µA
I
D
Off-state current VD= ±50 V ±10 ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,V
d
= 100 mV D Package
V
D
= 0, (see Notes 4 and 5) P Package
Third terminal = -50 to +50 V SL Package
50†
65†
30†
150
200
100
50†
65†
30†
150
200
100
50†
65†
30†
150
200
100
fF
description (Continued
)
3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section
† Typical value of the parameter, not a limit value.
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and G or the R and G terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP3240F3 TISP3260F3 TISP3290F3
UNIT
MIN MAX MIN MAX MIN MAX
I
DRM
Repetitive peak offstate current
V
D
= ±V
DRM
, 0°C < TJ < 70°C ±10 ±10 ±10 µA
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Source Resistance = 300 Ω
±240 ±260 ±290 V
V
(BO)
Impulse breakover voltage
dv/dt = ±1000 V/µs,di/dt < 20 A/µs
Source Resistance = 50
Ω
±267† ±287† ±317† V
I
(BO)
Breakover current
dv/dt = ±250 V/ms,
Source Resistance = 300
Ω
±0.15 ±0.6 ±0.15 ±0.6 ±0.15 ±0.6 A
V
T
On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 ±3 V
I
H
Holding current di/dt = -/+30 mA/ms ±0.15 ±0.15 ±0.15 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp,
Maximum ramp value < 0.85V
(BR)MIN
±5 ±5 ±5 kV/µs
I
D
Off-state current VD= ±50 V ±10 ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,V
d
= 100 mV VD= 0, 57† 95 57† 95 57† 95 pF
Third terminal = -50 to +50 V V
D
= -5 V 26† 45 26† 45 26† 45 pF
(see Notes 6 and 7) V
D
= -50 V 11† 20 11† 20 11† 20 pF
electrical characteristics for the T and R terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP3320F3 TISP3380F3
UNIT
MIN MAX MIN MAX
I
DRM
Repetitive peak offstate current
V
D
= ±V
DRM
, 0°C < TJ < 70°C ±10 ±10 µA
I
D
Off-state current VD= ±50 V ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,Vd= 100 mV D Package
VD= 0, (see Notes 4 and 5) P Package
Third terminal = -50 to +50 V SL Package
50†
65†
30†
150
200
100
50†
65†
30†
150
200
100
fF
electrical characteristics for the T and G or the R and G terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP3320F3 TISP3380F3
UNIT
MIN MAX MIN MAX
I
DRM
Repetitive peak offstate current
V
D
= ±V
DRM
, 0°C < TJ < 70°C ±10 ±10 µA
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Source Resistance = 300 Ω
±320 ±380 V
V
(BO)
Impulse breakover voltage
dv/dt = ±1000 V/µs,di/dt < 20 A/µs
Source Resistance = 50
Ω
±347† ±407† V
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
I
(BO)
Breakover current
dv/dt = ±250 V/ms,
Source Resistance = 300
Ω
±0.15 ±0.6 ±0.15 ±0.6 A
V
T
On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 V
I
H
Holding current di/dt = -/+30 mA/ms ±0.15 ±0.15 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp,
Maximum ramp value < 0.85V
(BR)MIN
±5 ±5 kV/µs
I
D
Off-state current VD= ±50 V ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,V
d
= 100 mV VD= 0, 57† 95 57† 95 pF
Third voltage = -50 to +50 V V
D
= -5 V 26† 45 26† 45 pF
(see Notes 6 and 7) V
D
= -50 V 11† 20 11† 20 pF
electrical characteristics for the T and G or the R and G terminals, TJ = 25°C (Continued)
PARAMETER TEST CONDITIONS
TISP3320F3 TISP3380F3
UNIT
MIN MAX MIN MAX
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
5
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
thermal characteristics
PARAMETER
MIN TYP MAX
UNIT
R
θJA
Junction to free air thermal resistance
D Package 160
°C/WP Package 100
SL Package 105
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
6
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
A
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRENT
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - µA
0·001
0·01
0·1
1
10
100
TC3HAF
vs
VD = -50 V
VD = 50 V
JUNCTION TEMPERATURE
NORMALISED BREAKDOWN VOLTAGES
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakdown Voltages
0.9
1.0
1.1
1.2
TC3HAI
JUNCTION TEMPERA TURE
vs
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
NORMALISED BREAKDOWN VOLTAGES
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakdown Voltages
0.9
1.0
1.1
1.2
TC3HAJ
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)M
Negative Polarity
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
ON-STATE CURRENT
VT - On-State Voltage - V
2 3 4 5 6 7 8 91 10
I
T
- On-State Current - A
1
10
100
TC3HAL
ON-STATE VOLTAGE
vs
-40°C
150°C
25°C
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