Power Innovations TISP3180F3SL, TISP3180F3DR, TISP3180F3P, TISP3180F3D, TISP3150F3SL Datasheet
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TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
1
MARCH 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
● Planar Passivated Junctions
Low Off-State Current<10 µA
● Rated for International Surge Wave Shapes
● Surface Mount and Through-Hole Options
● UL Recognized, E132482
description
These medium voltage dual symmetrical
transient voltage suppressor devices are
designed to protect ISDN and telecommunication
applications with ground backed ringing against
transients caused by lightning strikes and a.c.
power lines. Offered in three voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities. Transients are initially clipped by
breakdown clamping until the voltage rises to the
breakover level, which causes the device to
DEVICE
V
DRM
V
V
(BO)
V
‘3125F3 100 125
‘3150F3 120 150
‘3180F3 145 180
WAVE SHAPE STANDARD
I
TSP
A
2/10 µs FCC Part 68 175
8/20 µs ANSI C62.41 120
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.5/700 µs RLM 88 38
10/700 µs
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 µs REA PE-60 35
PACKAGE PART # SUFFIX
Small-outline D
Small-outline taped
and reeled
DR
Plastic DIP P
Single-in-line SL
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
device symbol
G
T
R
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SD3XAA
D PACKAGE
(TOP VIEW)
P PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAE
1
2
3
4
5
6
7
8 G
G
G
G
NC
T
R
NC
NC - No internal connection
1
2
3
4 5
6
7
8
R
G
T
G
T
G
G
R
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MDXXAF
1
2
3
T
G
R
MDXXAG MD23AA
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
ensure precise and matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘3125F3
‘3150F3
‘3180F3
V
DRM
± 100
± 120
± 145
V
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
I
TSP
A
1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 350
2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 175
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 120
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.5/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35
Non-repetitive peak on-state current(see Notes 2 and 3) D Package
I
TSM
4
A rms50 Hz,1 s P Package 6
SL Package 6
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
F
/dt 250 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-40 to +150 °C
electrical characteristics for the T and R terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP3125F3 TISP3150F3 TISP3180F3
UNIT
MIN MAX MIN MAX MIN MAX
I
DRM
Repetitive peak offstate current
V
D
= ±2V
DRM
, 0°C < TJ < 70°C ±10 ±10 ±10 µA
I
D
Off-state current VD= ±50 V ±10 ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,V
d
= 100 mV D Package
V
D
= 0, (see Notes 4 and 5) P Package
Third terminal = -50 to +50 V SL Package
50†
65†
30†
150
200
100
50†
65†
30†
150
200
100
50†
65†
30†
150
200
100
fF
description (Continued
)
3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
electrical characteristics for the T and G or the R and G terminals, TJ = 25°C
PARAMETER TEST CONDITIONS
TISP3125F3 TISP3150F3 TISP3180F3
UNIT
MIN MAX MIN MAX MIN MAX
I
DRM
Repetitive peak offstate current
V
D
= ±V
DRM
, 0°C < TJ < 70°C ±10 ±10 ±10 µA
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Source Resistance = 300 Ω
±125 ±150 ±180 V
V
(BO)
Impulse breakover voltage
dv/dt = ±1000 V/µs,di/dt < 20 A/µs
Source Resistance = 50
Ω
±139† ±164† ±194† V
I
(BO)
Breakover current
dv/dt = ±250 V/ms,
Source Resistance = 300
Ω
±0.15 ±0.6 ±0.15 ±0.6 ±0.15 ±0.6 A
V
T
On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 ±3 V
I
H
Holding current di/dt = -/+30 mA/ms ±0.15 ±0.15 ±0.15 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp,
Maximum ramp value < 0.85V
(BR)MIN
±5 ±5 ±5 kV/µs
I
D
Off-state current VD= ±50 V ±10 ±10 ±10 µA
C
off
Off-state capacitance
f = 100 kHz,V
d
= 100 mV VD= 0, 55† 95 55† 95 55† 95 pF
Third terminal = -50 to +50 V V
D
= -5 V 31† 50 31† 50 31† 50 pF
(see Notes 6 and 7) V
D
= -50 V 15† 25 15† 25 15† 25 pF
thermal characteristics
PARAMETER
MIN TYP MAX
UNIT
R
θJA
Junction to free air thermal resistance
D Package 160
°C/WP Package 100
SL Package 105
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
.
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
5
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
Figure 2. Figure 3.
OFF-STATE CURRENT
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - µA
0·001
0·01
0·1
1
10
100
TC3MAF
JUNCTION TEMPERATURE
vs
VD = -50 V
VD = 50 V
NORMALISED BREAKDOWN VOLTAGES
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakdown Voltages
0.9
1.0
1.1
1.2
TC3MAI
JUNCTION TEMPERA TURE
vs
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
6
MARCH 1994 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
Figure 4. Figure 5.
Figure 6.
NORMALISED BREAKDOWN VOLTAGES
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalised Breakdown Voltages
0.9
1.0
1.1
1.2
TC3MAJ
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)M
Negative Polarity
Normalised to V
(BR)
I
(BR)
= 100 µA and 25°C
ON-STATE CURRENT
VT - On-State Voltage - V
2 3 4 5 6 7 8 91 10
I
T
- On-State Current - A
1
10
100
TC3MAL
ON-STATE VOLTAGE
vs
-40°C
150°C
25°C
HOLDING CURRENT & BREAKOVER CURRENT
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
H
, I
(BO)
- Holding Current, Breakover Current - A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
TC3MAH
JUNCTION TEMPERATURE
vs
I
(BO)
I
H
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