Power Innovations TISP3082F3SL, TISP3082F3P, TISP3082F3DR, TISP3082F3D, TISP3072F3SL Datasheet

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TISP3072F3, TISP3082F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Ion-Implanted Breakdown Region

Precise and Stable Voltage Low Voltage Overshoot under Surge

● Planar Passivated Junctions

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

● Surface Mount and Through-Hole Options

● UL Recognized, E132482

description

These low voltage dual symmetrical transient voltage suppressor devices are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.

DEVICE

DRM

(BO)

‘3072F3 58 72 ‘3082F3 66 82

WAVE SHAPE STANDARD

TSP

2/10 µs FCC Part 68 80

8/20 µs ANSI C62.41 70 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45

0.5/700 µs RLM 88 38

10/700 µs

FTZ R12

VDE 0433

CCITT IX K17/K20

50 50 50

10/1000 µs REA PE-60 35

PACKAGE PART # SUFFIX

Small-outline D

Small-outline taped

and reeled

Plastic DIP P

Single-in-line SL

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation

device symbol

Terminals T, R and G correspond to the alternative line designators of A, B and C

SD3XAA

D PACKAGE

(TOP VIEW)

P PACKAGE

(TOP VIEW)

SL PACKAGE

(TOP VIEW)

MDXXAE

1 2 3 4

8 G

G G G

NC - No internal connection

1 2

4 5

G G

Specified T terminal ratings require connection of pins 1 and 8. Specified R terminal ratings require connection of pins 4 and 5.

MDXXAF

1 2 3

T G R

MDXXAG MD23AA

TISP3072F3, TISP3082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C < T

<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

5. Further details on capacitance are given in the Applications Information section.

† Typical value of the parameter, not a limit value.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (0°C < T

< 70°C)

‘3072F3 ‘3082F3

DRM

± 58 ± 66

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

TSP

1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120 2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80 8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70 10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.5/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35

Non-repetitive peak on-state current(see Notes 2 and 3) D Package

TSM

A rms50 Hz,1 s P Package 6

SL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di

/dt 250 A/µs

Junction temperature T

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

electrical characteristics for the T and R terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP3072F3 TISP3082F3

UNIT

MIN MAX MIN MAX

DRM

Repetitive peak offstate current

= ±2V

DRM

, 0°C < TJ < 70°C ±10 ±10 µA

Off-state current VD= ±50 V ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV VD= 0, D Package Third terminal voltage = -50 V to +50 V P Package (see Notes 4 and 5) SL Package

50† 65† 30†

150 200 100

50† 65† 30†

150 200 100

electrical characteristics for the T and G or the R and G terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP3072F3 TISP3082F3

UNIT

MIN MAX MIN MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ < 70°C ±10 ±10 µA

description (Continued

)

MARCH 1994 - REVISED SEPTEMBER 1997

TISP3072F3, TISP3082F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

7. Further details on capacitance are given in the Applications Information section.

(BO)

Breakover voltage

dv/dt = ±250 V/ms, Source Resistance = 300

Ω

±72 ±82 V

(BO)

Impulse breakover voltage

dv/dt = ±1000 V/µs,di/dt < 20 A/µs Source Resistance = 50

Ω

±86† ±96† V

(BO)

Breakover current

dv/dt = ±250 V/ms, Source Resistance = 300

Ω

±0.15 ±0.6 ±0.15 ±0.6 A

On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 V

Holding current di/dt = -/+30 mA/ms ±0.15 ±0.15 A

dv/dt

Critical rate of rise of off-state voltage

Linear voltage ramp, Maximum ramp value < 0.85V

(BR)MIN

±5 ±5 kV/µs

Off-state current VD= ±50 V ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV VD= 0, 82† 140 82† 140 pF

Third terminal voltage = -50 V to +50 V V

= -5 V 49† 85 49† 85 pF

(see Notes 6 and 7) V

= -50 V 25† 40 25† 40 pF

electrical characteristics for the T and G or the R and G terminals, TJ = 25°C (Continued)

PARAMETER TEST CONDITIONS

TISP3072F3 TISP3082F3

UNIT

MIN MAX MIN MAX

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Switching

Characteristic

(BO)

(BR)

(BR)M

DRM

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAA

TISP3072F3, TISP3082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

† Typical value of the parameter, not a limit value.

thermal characteristics

PARAMETER

MIN TYP MAX

UNIT

θJA

Junction to free air thermal resistance

D Package 160

°C/WP Package 100

SL Package 105

TYPICAL CHARACTERISTICS T and G, or R and G terminals

Figure 2. Figure 3.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

- Off-State Current - µA

0·001

0·01

0·1

100

TC3LAF

JUNCTION TEMPERATURE

VD = -50 V

VD = 50 V

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3LAI

JUNCTION TEMPERA TURE

(BO)

(BR)

(BR)M

Positive Polarity

Normalised to V

(BR)

= 100 µA and 25°C

MARCH 1994 - REVISED SEPTEMBER 1997

TISP3072F3, TISP3082F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

T and G, or R and G terminals

Figure 4. Figure 5.

Figure 6.

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3LAJ

JUNCTION TEMPERA TURE

(BO)

(BR)

(BR)M

Negative Polarity

Normalised to V

(BR)

= 100 µA and 25°C

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

- On-State Current - A

100

TC3LAL

ON-STATE VOLTAGE

-40°C

150°C

25°C

HOLDING CURRENT & BREA KOVER CURRENT

T - Junction Temperature - °C

-25 0 25 50 75 100 125 150

, I

(BO)

- Holding Current, Breakover Current - A

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.1

1.0

TC3LAH

(BO)

JUNCTION TEMPERA TURE

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