Power Innovations TISP2180F3P, TISP2180F3DR, TISP2180F3D, TISP2150F3SL, TISP2150F3P Datasheet

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TISP2125F3, TISP2150F3, TISP2180F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Ion-Implanted Breakdown Region

Precise and Stable Voltage Low Voltage Overshoot under Surge

● Planar Passivated Junctions

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

● Surface Mount and Through-Hole Options

● UL Recognized, E132482

description

These medium voltage dual symmetrical transient voltage suppressor devices are designed to protect ISDN and telecommunication applications with battery backed ringing against transients caused by lightning strikes and a.c. power lines. Offered in three voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to

DEVICE

DRM

(BO)

‘2125F3 100 125 ‘2150F3 120 150 ‘2180F3 145 180

WAVE SHAPE STANDARD

TSP

2/10 µs FCC Part 68 175

8/20 µs ANSI C62.41 120 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45

0.5/700 µs RLM 88 38

10/700 µs

FTZ R12

VDE 0433

CCITT IX K17/K20

50 50 50

10/1000 µs REA PE-60 35

PACKAGE PART # SUFFIX

Small-outline D

Small-outline taped

and reeled

Plastic DIP P

Single-in-line SL

crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control

device symbol

D PACKAGE

(TOP VIEW)

P PACKAGE

(TOP VIEW)

SL PACKAGE

(TOP VIEW)

MDXXAE

1 2 3 4

8 G

G G G

NC - No internal connection

1 2

4 5

G G

Specified T terminal ratings require connection of pins 1 and 8. Specified R terminal ratings require connection of pins 4 and 5.

MDXXAF

1 2 3

T G R

MDXXAG MD23AA

T R

Terminals T, R and G correspond to the alternative line designators of A, B and C

SD2XAA

TISP2125F3, TISP2150F3, TISP2180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

and are virtually transparent to the system in normal operation The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin

clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C < T

<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

5. Further details on capacitance are given in the Applications Information section.

† Typical value of the parameter, not a limit value.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (0°C < T

< 70°C)

‘2125F3 ‘2125F3 ‘2180F3

DRM

± 100 ± 120 ± 145

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

TSP

1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 350 2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 175 8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 120 10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.5/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35

Non-repetitive peak on-state current(see Notes 2 and 3) D Package

TSM

A rms50 Hz,1 s P Package 6

SL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di

/dt 250 A/µs

Junction temperature T

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

electrical characteristics for the T and R terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP2125F3 TISP2150F3 TISP2180F3

UNIT

MIN MAX MIN MAX MIN MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ < 70°C ±10 ±10 ±10 µA

Off-state current VD= ±50 V ±10 ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV VD= 0, Third terminal voltage = 0 (see Notes 4 and 5)

20† 35 20† 35 20† 35 pF

description (Continued)

MARCH 1994 - REVISED SEPTEMBER 1997

TISP2125F3, TISP2150F3, TISP2180F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

7. Further details on capacitance are given in the Applications Information section.

† Typical value of the parameter, not a limit value.

electrical characteristics for the T and G or the R and G terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP2125F3 TISP2150F3 TISP2180F3

UNIT

MIN MAX MIN MAX MIN MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ < 70°C ±10 ±10 ±10 µA

(BO)

Breakover voltage

dv/dt = ±250 V/ms, Source Resistance = 300 Ω

±125 ±150 ±180 V

(BO)

Impulse breakover voltage

dv/dt = ±1000 V/µs,di/dt < 20 A/µs Source Resistance = 50

Ω

±143† ±168† ±198† V

(BO)

Breakover current

dv/dt = ±250 V/ms, Source Resistance = 300

Ω

±0.15 ±0.6 ±0.15 ±0.6 ±0.15 ±0.6 A

On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 ±3 V

Holding current di/dt = -/+30 mA/ms ±0.15 ±0.15 ±0.15 A

dv/dt

Critical rate of rise of off-state voltage

Linear voltage ramp, Maximum ramp value < 0.85V

(BR)MIN

±5 ±5 ±5 kV/µs

Off-state current VD= ±50 V ±10 ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV VD= 0, 52† 90 52† 90 52† 90 pF

Third terminal voltage = 0 V

= -5 V 26† 45 26† 45 26† 45 pF

(see Notes 6 and 7) V

= -50 V 11† 20 11† 20 11† 20 pF

thermal characteristics

PARAMETER

MIN TYP MAX

UNIT

θJA

Junction to free air thermal resistance

D Package 160

°C/WP Package 100

SL Package 105

TISP2125F3, TISP2150F3, TISP2180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS

The high level characteristics for terminals R and T are not guaranteed.

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Switching

Characteristic

(BO)

(BR)

(BR)M

DRM

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAA

MARCH 1994 - REVISED SEPTEMBER 1997

TISP2125F3, TISP2150F3, TISP2180F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS T and G, or R and G terminals

Figure 2. Figure 3.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

- Off-State Current - µA

0·001

0·01

0·1

100

TC2MAL

JUNCTION TEMPERATURE

VD = -50 V

VD = 50 V

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC2MAO

JUNCTION TEMPERA TURE

(BO)

(BR)

(BR)M

Positive Polarity

Normalised to V

(BR)

= 100 µA and 25°C

TISP2125F3, TISP2150F3, TISP2180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

T and G, or R and G terminals

Figure 4. Figure 5.

Figure 6. Figure 7.

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC2MAP

JUNCTION TEMPERATURE

(BO)

(BR)

(BR)M

Negative Polarity

Normalised to V

(BR)

= 100 µA and 25°C

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

- On-State Current - A

100

TC2MAQ

ON-STATE VOLTAGE

-40°C150°C

25°C

HOLDING CURRENT & BREAKOVER CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

, I

(BO)

- Holding Current, Breakover Current - A

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.1

1.0

TC2MAM

JUNCTION TEMPERATURE

(BO)

NORMALISED B REAKOVER VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalised Breakover Voltage

1.0

1.1

1.2

1.3

TC2MAF

Positive

RATE OF RISE OF PRINCIPLE CURRENT

Negative

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