Power Innovations TISP1072F3D, TISP1082F3SL, TISP1082F3DR, TISP1082F3D, TISP1072F3SL Datasheet

...

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Ion-Implanted Breakdown Region

Precise and Stable Voltage Low Voltage Overshoot under Surge

● Planar Passivated Junctions

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

● Surface Mount and Through-Hole Options

● UL Recognized, E132482

description

These dual asymmetrical transient voltage suppressors are designed for the overvoltage protection of ICs used for the SLIC (Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1xxxF3 limits voltages that exceed these supply rails and is offered in two voltage variants to match typical negative supply voltage values.

High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the

DEVICE

DRM

(BO)

‘1072F3 - 58 - 72 ‘1082F3 - 66 - 82

WAVE SHAPE STANDARD

TSP

2/10 µs FCC Part 68 80

8/20 µs ANSI C62.41 70 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45

0.5/700 µs RLM 88 38

10/700 µs

FTZ R12

VDE 0433

CCITT IX K17/K20

50 50 50

10/1000 µs REA PE-60 35

PACKAGE PART # SUFFIX

Small-outline D

Small-outline taped

and reeled

Plastic DIP P

Single-in-line SL

breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair

device symbol

D PACKAGE

(TOP VIEW)

P PACKAGE

(TOP VIEW)

SL PACKAGE

(TOP VIEW)

MDXXAE

1 2 3 4 5

8 G

G G G

NC - No internal connection

1 2

3 4 5

G G

Specified T terminal ratings require connection of pins 1 and 8. Specified R terminal ratings require connection of pins 4 and 5.

MDXXAF

1 2 3

T G R

MDXXAG MD1XAA

SD1XAA

Terminals T, R and G correspond to the alternative line designators of A, B and C

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

description (continued)

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation

The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C < T

<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTE 4: Further details on capacitance are given in the Applications Information section.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage( 0°C < T

<70°C)

‘1072F3 ‘1082F3

DRM

-58

-66

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

TSP

1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120 2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80 8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70 10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35

Non-repetitive peak on-state current(see Notes 2 and 3) D Package

TSM

A rms

50 Hz,1 s

P Package 6

SL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di

/dt 250 A/µs

Junction temperature T

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

electrical characteristics for the T and R terminals, 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS

TISP1072F3 TISP1082F3

UNIT

MIN TYP

MAX MIN TYP MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ<70°C ±10 ±10 µA

Off-state current VD= ±50 V ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV

= 0

(see Note 4)

D Package 0.08 0.5 0.08 0.5 pF P Package 0.06 0.4 0.06 0.4 pF SL Package 0.02 0.3 0.02 0.3 pF

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

NOTE 5: Further details on capacitance are given in the Applications Information section.

electrical characteristics for the T and G and R and G terminals, 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS

TISP1072F3 TISP1082F3

UNIT

MIN TYP

MAX MIN TYP MAX

DRM

Repetitive peak offstate current

= V

DRM

, 0°C < TJ<70°C -10 -10 µA

(BO)

Breakover voltage dv/dt = -250 V/ms,R

SOURCE

= 300 Ω -72 -82 V

(BO)

Impulse breakover voltage

dv/dt = -1000 V/µs,R

SOURCE

= 50 Ω,

di/dt < -20 A/µs

-78 -92 V

(BO)

Breakover current dv/dt = -250 V/ms,R

SOURCE

= 300 Ω -0.1 -0.6 -0.1 -0.6 A

FRM

Peak forward recovery voltage

dv/dt = 1000 V/µs,R

SOURCE

= 50 Ω,

diF/dt < 20 A/µs

3.3 3.3 V

Forward voltage IT= 5 A,tW= 100 µs 3 3 V

On-state voltage IT= -5 A,tW= 100 µs -3 -3 V

Holding current di/dt = +30 mA/ms -0.15 -0.15 A

dv/dt

Critical rate of rise of off-state voltage

Linear voltage ramp Maximum ramp value < 0.85V

DRM

-5 -5 kV/µs

Off-state current VD= -50 V -10 -10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV Third terminal voltage = 0 (see Note 5)

= 0, 150 240 130 240 pF

= -5 V 65 104 55 104 pF

= -50 V 30 48 25 48 pF

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

θJA

Junction to free air thermal resistance

tot

= 0.8 W,TA= 25°C

5 cm

, FR4 PCB

D Package 160

°C/WP Package 100

SL Package 105

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND G OR T AND G

Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND T

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Forward

Conduction

Characteristic

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAC

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Switching

Characteristic

(BO)

(BR)

(BR)M

DRM

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAA

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and G, or T and G terminals

Figure 3. Figure 4.

Figure 5. Figure 6.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

- Off-State Current - µA

0·001

0·01

0·1

100

TC1LAF

JUNCTION TEMPERATURE

VD = -50 V

BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Negat ve Breakdown Vo tages - V

60.0

70.0

80.0

TC1LAL

JUNCTION TEMPERATURE

(BO)

(BR)

(BO)

(BR)M

(BR)

= 1 mA

'1072F3

'1082F3

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

- On-State Current - A

100

TC1LAC

ON-STA TE VOLTAGE

-40°C150°C

25°C

FORWARD CURRENT

VF - Forward Voltage - V

2 3 4 5 6 7 8 91 10

- Forward Current - A

100

TC1LAE

FORWARD VOLTAGE

-40°C

150°C

25°C

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS R and G, or T and G terminals

Figure 7. Figure 8.

Figure 9. Figure 10.

HOLDING CURR ENT & BREAKOVER CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

, I

(BO)

- Holding Current, Breakover Current - A

0·07

0·08

0·09

0·1

0·2

0·3

0·4

0·5

0·6

0·7

0·8

0·9

1·0

TC1LAD

JUNCTION TEMPERA TURE

(BO)

NORMALISED BREAKOVER VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalised Breakover Voltage

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

TC1LAG

RATE OF RISE OF PRINCIPLE CURRENT

PEAK FORWARD RECOVERY VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

FRM

- Peak Forward Recovery Voltage - V

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

TC1LAH

RATE OF RISE OF PRINCIPLE CURRENT

OFF-STATE CA PACITANCE

R or T Terminal Voltage (Negative) - V

0·1 1 10

Off-State Capacitance - pF

100

TC1LAJ

R or T TERMINA L VOLTAGE (NEGATIVE)

'1072F3

'1082F3

200

Third Terminal = 0 to -50 V

+ 11 hidden pages